画像 |
部品番号 |
メーカ |
説明 |
パッケージ |
在庫 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
SICFET N-CH 1.2KV 19A TO247-3
|
パッケージ: - |
在庫531 |
|
SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V, 18V | 5.7V @ 2.5mA | 13 nC @ 18 V | 454 pF @ 800 V | +23V, -7V | - | 94W (Tc) | 182mOhm @ 6A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 32A TO263-7
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 4.5V @ 820µA | 68 nC @ 10 V | 3288 pF @ 400 V | ±20V | - | 171W (Tc) | 75mOhm @ 16.4A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-7-3-10 | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
||
Infineon Technologies |
MOSFET N-CH 60V 293A D2PAK-7P
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 240A (Tc) | - | 4V @ 250µA | 300 nC @ 10 V | 8850 pF @ 50 V | - | - | 375W (Tc) | 2.1mOhm @ 168A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D2PAK (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 600V 13.8A D2PAK
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 3.5V @ 430µA | 43 nC @ 10 V | 950 pF @ 100 V | ±20V | - | 104W (Tc) | 280mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 25A TO263-3
|
パッケージ: - |
在庫5,286 |
|
MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 3.5V @ 1.1mA | 70 nC @ 10 V | 2500 pF @ 100 V | ±20V | - | 208W (Tc) | 125mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 120MA SOT223-4
|
パッケージ: - |
在庫7,773 |
|
MOSFET (Metal Oxide) | 600 V | 120mA (Ta) | 0V, 10V | 1V @ 94µA | 3.7 nC @ 5 V | 98 pF @ 25 V | ±20V | Depletion Mode | 1.8W (Ta) | 45Ohm @ 120mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 30V 24A/100A TDSON
|
パッケージ: - |
在庫25,335 |
|
MOSFET (Metal Oxide) | 30 V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 26 nC @ 10 V | 1700 pF @ 15 V | ±20V | - | 2.5W (Ta), 48W (Tc) | 2.6mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET COOL MOS SAWED WAFER
|
パッケージ: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 60V 29A TO252-3
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 29A (Tc) | 4.5V, 10V | 2V @ 28µA | 13 nC @ 5 V | 800 pF @ 30 V | ±20V | - | 68W (Tc) | 35mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET 100V 9.4A DIE
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 9.4A | - | - | - | - | - | - | - | 210mOhm @ 9.4A, 10V | - | Surface Mount | Die | Die |
||
Infineon Technologies |
MOSFET N-CH 600V 12A TO252-3
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 4V @ 190µA | 18 nC @ 10 V | 761 pF @ 400 V | ±20V | - | 53W (Tc) | 280mOhm @ 3.8A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO247-3
|
パッケージ: - |
在庫492 |
|
MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 4.5V @ 630µ | 11 nC @ 10 V | 1750 pF @ 100 V | ±20V | - | 151W (Tc) | 190mOhm @ 7.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 30A/100A TDSON
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 30A (Ta), 100A (Tc) | 10V | 4V @ 85µA | 108 nC @ 10 V | 8800 pF @ 20 V | ±20V | - | 2.5W (Ta), 139W (Tc) | 1.7mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET_(20V 40V)
|
パッケージ: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
IC MOSFET
|
パッケージ: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 30V 28A/100A TDSON
|
パッケージ: - |
在庫78,147 |
|
MOSFET (Metal Oxide) | 30 V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 44 nC @ 10 V | 2800 pF @ 15 V | ±20V | - | 2.5W (Ta), 69W (Tc) | 1.9mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 250V 64A TO220-3
|
パッケージ: - |
在庫18,099 |
|
MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 4V @ 270µA | 86 nC @ 10 V | 7100 pF @ 100 V | ±20V | - | 300W (Tc) | 20mOhm @ 64A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 500V 9.9A TO220-3
|
パッケージ: - |
在庫1,500 |
|
MOSFET (Metal Oxide) | 500 V | 9.9A (Tc) | 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | 584 pF @ 100 V | ±20V | - | 73W (Tc) | 380mOhm @ 3.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
SICFET N-CH 1.2KV 26A TO247-4
|
パッケージ: - |
在庫1,776 |
|
SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 15V, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | 707 pF @ 800 V | +23V, -7V | - | 115W (Tc) | 117mOhm @ 8.5A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
||
Infineon Technologies |
MOSFET P-CH 60V SOT223
|
パッケージ: - |
在庫186 |
|
MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET_(120V 300V)
|
パッケージ: - |
在庫2,991 |
|
MOSFET (Metal Oxide) | 120 V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
|
パッケージ: - |
在庫25,020 |
|
MOSFET (Metal Oxide) | 40 V | 60A (Ta), 637A (Tc) | 4.5V, 10V | 2.3V @ 1.449mA | 129 nC @ 10 V | 12000 pF @ 20 V | ±20V | - | 3W (Ta), 333W (Tc) | 0.45mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
||
Infineon Technologies |
TRENCH >=100V
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 120 V | 11A (Ta), 62A (Tc) | 8V, 10V | 3.6V @ 35µA | 19.3 nC @ 10 V | 1400 pF @ 60 V | ±20V | - | 3W (Ta), 94W (Tc) | 11mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SuperSO8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 80V 32A/247A 8HSOF
|
パッケージ: - |
在庫11,970 |
|
MOSFET (Metal Oxide) | 80 V | 32A (Ta), 247A (Tc) | 6V, 10V | 3.8V @ 159µA | 127 nC @ 10 V | 9200 pF @ 40 V | ±20V | - | 231W (Tc) | 1.9mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Infineon Technologies |
MOSFET N-CH 550V 23A TO263-3
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 550 V | 23A (Tc) | 10V | 3.5V @ 930µA | 64 nC @ 10 V | 2540 pF @ 100 V | ±20V | - | 192W (Tc) | 140mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 30V 40A TDSON-8
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 6V, 10V | 1.9V @ 105µA | 43.2 nC @ 10 V | 3190 pF @ 15 V | ±25V | - | 69W (Ta) | 8.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
SMALL SIGNAL MOSFETS PG-SOT223-4
|
パッケージ: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 930mA (Ta), 1.55A (Tc) | 4.5V, 10V | 2V @ 165µA | 7.2 nC @ 10 V | 350 pF @ 50 V | ±20V | - | 1.8W (Ta), 5W (Tc) | 980mOhm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 650V 39A TO247-3
|
パッケージ: - |
在庫720 |
|
MOSFET (Metal Oxide) | 650 V | 39A (Tc) | 10V | 3.5V @ 1.7mA | 116 nC @ 10 V | 4000 pF @ 100 V | ±20V | - | 313W (Tc) | 75mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |