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IPN60R360PFD7SATMA1

Infineon Technologies

MOSFET N-CH 600V 10A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 7W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-3-1
Package / Case: TO-261-3

パッケージ: -

在庫40,212

MOSFET (Metal Oxide)

600 V

10A (Tc)

10V

4.5V @ 140µA

12.7 nC @ 10 V

534 pF @ 400 V

±20V

-

7W (Tc)

360mOhm @ 2.9A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-3-1

TO-261-3

IPS135N03LG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IPF039N08NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-14
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

パッケージ: -

在庫2,046

MOSFET (Metal Oxide)

80 V

126A (Tc)

6V, 10V

3.8V @ 85µA

81 nC @ 10 V

3800 pF @ 40 V

±20V

-

150W (Tc)

3.9mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-14

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IMZA65R015M2HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

BSB028N06NN3GXUMA1

Infineon Technologies

MOSFET N-CH 60V 22A/90A 2WDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 102µA
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2, CanPAK M™
Package / Case: 3-WDSON

パッケージ: -

在庫45,039

MOSFET (Metal Oxide)

60 V

22A (Ta), 90A (Tc)

10V

4V @ 102µA

143 nC @ 10 V

12000 pF @ 30 V

±20V

-

2.2W (Ta), 78W (Tc)

2.8mOhm @ 30A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

MG-WDSON-2, CanPAK M™

3-WDSON

BSB028N06NN3GXUMA2

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 102µA
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-5-3
Package / Case: DirectFET™ Isometric MN

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MOSFET (Metal Oxide)

60 V

22A (Ta), 90A (Tc)

10V

4V @ 102µA

143 nC @ 10 V

12000 pF @ 30 V

±20V

-

2.2W (Ta), 78W (Tc)

2.8mOhm @ 30A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

MG-WDSON-5-3

DirectFET™ Isometric MN

IRFC230NB

Infineon Technologies

MOSFET 200V 9.3A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 9.3A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.3A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

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MOSFET (Metal Oxide)

200 V

9.3A

-

300mOhm @ 9.3A, 10V

-

Surface Mount

Die

IMBG120R022M2HXTMA1

Infineon Technologies

SIC DISCRETE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫2,874

-

IRLHM630TR2PBF

Infineon Technologies

MOSFET N-CH 30V 21A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (3x3)
Package / Case: 8-VQFN Exposed Pad

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MOSFET (Metal Oxide)

30 V

21A (Ta), 40A (Tc)

-

1.1V @ 50µA

62 nC @ 4.5 V

3170 pF @ 25 V

-

3.5mOhm @ 20A, 4.5V

-

Surface Mount

PQFN (3x3)

8-VQFN Exposed Pad

AIMZA75R040M1HXKSA1

Infineon Technologies

IGBT

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IPI100N04S3-03

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IPP60R160C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 23.8A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

600 V

23.8A (Tc)

10V

3.5V @ 750µA

75 nC @ 10 V

1660 pF @ 100 V

±20V

-

176W (Tc)

160mOhm @ 11.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IPD950P06NMSAUMA1

Infineon Technologies

MOSFET P-CH 60V TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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MOSFET (Metal Oxide)

60 V

-

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

BSS138IXTSA1

Infineon Technologies

SMALL SIGNAL MOSFETS PG-SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: -

在庫265,626

MOSFET (Metal Oxide)

60 V

230mA (Ta)

4.5V, 10V

1.4V @ 26µA

1 nC @ 10 V

32 pF @ 25 V

±20V

-

360mW (Ta)

3.5Ohm @ 230mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT-23-3

TO-236-3, SC-59, SOT-23-3

IRLHS6342TR2PBF

Infineon Technologies

MOSFET N-CH 30V 8.7A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 6-PQFN (2x2)
Package / Case: 6-PowerVDFN

パッケージ: -

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MOSFET (Metal Oxide)

30 V

8.7A (Ta), 19A (Tc)

-

1.1V @ 10µA

11 nC @ 4.5 V

1019 pF @ 25 V

-

15.5mOhm @ 8.5A, 4.5V

-

Surface Mount

6-PQFN (2x2)

6-PowerVDFN

IQE013N04LM6CGATMA1

Infineon Technologies

40V N-CH FET SOURCE-DOWN CG 3X3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 51µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PG-TTFN-9-1
Package / Case: 8-PowerTDFN

パッケージ: -

在庫16,482

MOSFET (Metal Oxide)

40 V

31A (Ta), 205A (Tc)

4.5V, 10V

2V @ 51µA

55 nC @ 10 V

3900 pF @ 20 V

±20V

-

2.5W (Ta), 107W (Tc)

1.35mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

PG-TTFN-9-1

8-PowerTDFN

IRF7413ZTRPBFXTMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8-902
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: -

在庫12,000

MOSFET (Metal Oxide)

30 V

13A (Ta)

4.5V, 10V

2.25V @ 250µA

14 nC @ 4.5 V

1210 pF @ 15 V

±20V

-

2.5W (Ta)

10mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-8-902

8-SOIC (0.154", 3.90mm Width)

IPP019N06NF2SAKMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 129µA
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-U05
Package / Case: TO-220-3

パッケージ: -

在庫2,232

MOSFET (Metal Oxide)

60 V

33A (Ta), 185A (Tc)

6V, 10V

3.3V @ 129µA

162 nC @ 10 V

7300 pF @ 30 V

±20V

-

3.8W (Ta), 188W (Tc)

1.9mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-U05

TO-220-3

ISC009N06LM5ATMA1

Infineon Technologies

MOSFET N-CH 60V 41A/348A TSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-3
Package / Case: 8-PowerTDFN

パッケージ: -

在庫8,334

MOSFET (Metal Oxide)

60 V

41A (Ta), 348A (Tc)

4.5V, 10V

2.3V @ 147µA

209 nC @ 10 V

13000 pF @ 30 V

±20V

-

3W (Ta), 214W (Tc)

0.9mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-3

8-PowerTDFN

IRFP22N50APBFXKMA1

Infineon Technologies

MOSFET N-CH 500V 22A TO247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 277W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

パッケージ: -

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MOSFET (Metal Oxide)

500 V

22A (Tc)

10V

4V @ 250µA

120 nC @ 10 V

3450 pF @ 25 V

±30V

-

277W (Tc)

230mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247AC

TO-247-3

IPW65R125CFD7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

パッケージ: -

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MOSFET (Metal Oxide)

650 V

19A (Tc)

10V

4.5V @ 420µA

36 nC @ 10 V

1694 pF @ 400 V

±20V

-

98W (Tc)

125mOhm @ 8.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPF009N04NF2SATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-U02
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

パッケージ: -

在庫2,262

MOSFET (Metal Oxide)

40 V

49A (Ta), 302A (Tc)

6V, 10V

3.4V @ 249µA

315 nC @ 10 V

15000 pF @ 20 V

±20V

-

3.8W (Ta), 375W (Tc)

0.9mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-U02

TO-263-7, D2PAK (6 Leads + Tab)

IPTG018N10NM5ATMA1

Infineon Technologies

TRENCH >=100V PG-HSOG-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 273A Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 273W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8-1
Package / Case: 8-PowerSMD, Gull Wing

パッケージ: -

在庫5,400

MOSFET (Metal Oxide)

100 V

32A (Ta), 273A Tc)

6V, 10V

3.8V @ 202µA

152 nC @ 10 V

11000 pF @ 50 V

±20V

-

3.8W (Ta), 273W (Tc)

1.8mOhm @ 150A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOG-8-1

8-PowerSMD, Gull Wing

IPB110N06L-G

Infineon Technologies

MOSFET N-CH 60V 78A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2V @ 94µA
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 11mOhm @ 78A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

60 V

78A (Tc)

-

2V @ 94µA

79 nC @ 10 V

2700 pF @ 30 V

-

11mOhm @ 78A, 10V

-

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IRFB4228PBFXKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-904
Package / Case: TO-220-3

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

150 V

83A (Tc)

10V

5V @ 250µA

107 nC @ 10 V

4530 pF @ 25 V

±30V

-

330W (Tc)

15mOhm @ 33A, 10V

-40°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-904

TO-220-3

64-2120PBF

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

BSC034N10LS5ATMA1

Infineon Technologies

MOSFET N-CH 100V 19A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-7
Package / Case: 8-PowerTDFN

パッケージ: -

在庫80,733

MOSFET (Metal Oxide)

100 V

19A (Ta), 100A (Tc)

4.5V, 10V

2.3V @ 115µA

46 nC @ 4.5 V

6500 pF @ 50 V

±20V

-

2.5W (Ta), 156W (Tc)

3.4mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-7

8-PowerTDFN

IPD70P04P4L08ATMA2

Infineon Technologies

MOSFET P-CH 40V 70A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫33,177

MOSFET (Metal Oxide)

40 V

70A (Tc)

4.5V, 10V

2.2V @ 120µA

92 nC @ 10 V

5430 pF @ 25 V

+5V, -16V

-

75W (Tc)

7.8mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

部品番号	メーカ	説明	パッケージ	在庫	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPN60R360PFD7SATMA1	Infineon Technologies	MOSFET N-CH 600V 10A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-3-1 Package / Case: TO-261-3	パッケージ: -	在庫40,212	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	4.5V @ 140µA	12.7 nC @ 10 V	534 pF @ 400 V	±20V	-	7W (Tc)	360mOhm @ 2.9A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-3-1	TO-261-3
IPS135N03LG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPF039N08NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 126A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-14 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	パッケージ: -	在庫2,046	MOSFET (Metal Oxide)	80 V	126A (Tc)	6V, 10V	3.8V @ 85µA	81 nC @ 10 V	3800 pF @ 40 V	±20V	-	150W (Tc)	3.9mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-14	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMZA65R015M2HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSB028N06NN3GXUMA1	Infineon Technologies	MOSFET N-CH 60V 22A/90A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 102µA Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M™ Package / Case: 3-WDSON	パッケージ: -	在庫45,039	MOSFET (Metal Oxide)	60 V	22A (Ta), 90A (Tc)	10V	4V @ 102µA	143 nC @ 10 V	12000 pF @ 30 V	±20V	-	2.2W (Ta), 78W (Tc)	2.8mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M™	3-WDSON
BSB028N06NN3GXUMA2	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 102µA Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-5-3 Package / Case: DirectFET™ Isometric MN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	60 V	22A (Ta), 90A (Tc)	10V	4V @ 102µA	143 nC @ 10 V	12000 pF @ 30 V	±20V	-	2.2W (Ta), 78W (Tc)	2.8mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-5-3	DirectFET™ Isometric MN
IRFC230NB	Infineon Technologies	MOSFET 200V 9.3A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 9.3A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300mOhm @ 9.3A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	200 V	9.3A	-	-	-	-	-	-	-	300mOhm @ 9.3A, 10V	-	Surface Mount	Die	Die
IMBG120R022M2HXTMA1	Infineon Technologies	SIC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫2,874	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLHM630TR2PBF	Infineon Technologies	MOSFET N-CH 30V 21A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.1V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (3x3) Package / Case: 8-VQFN Exposed Pad	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	30 V	21A (Ta), 40A (Tc)	-	1.1V @ 50µA	62 nC @ 4.5 V	3170 pF @ 25 V	-	-	-	3.5mOhm @ 20A, 4.5V	-	Surface Mount	PQFN (3x3)	8-VQFN Exposed Pad
AIMZA75R040M1HXKSA1	Infineon Technologies	IGBT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI100N04S3-03	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R160C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 23.8A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	3.5V @ 750µA	75 nC @ 10 V	1660 pF @ 100 V	±20V	-	176W (Tc)	160mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPD950P06NMSAUMA1	Infineon Technologies	MOSFET P-CH 60V TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	60 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSS138IXTSA1	Infineon Technologies	SMALL SIGNAL MOSFETS PG-SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: -	在庫265,626	MOSFET (Metal Oxide)	60 V	230mA (Ta)	4.5V, 10V	1.4V @ 26µA	1 nC @ 10 V	32 pF @ 25 V	±20V	-	360mW (Ta)	3.5Ohm @ 230mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRLHS6342TR2PBF	Infineon Technologies	MOSFET N-CH 30V 8.7A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8.7A (Ta), 19A (Tc)	-	1.1V @ 10µA	11 nC @ 4.5 V	1019 pF @ 25 V	-	-	-	15.5mOhm @ 8.5A, 4.5V	-	Surface Mount	6-PQFN (2x2)	6-PowerVDFN
IQE013N04LM6CGATMA1	Infineon Technologies	40V N-CH FET SOURCE-DOWN CG 3X3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 51µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PG-TTFN-9-1 Package / Case: 8-PowerTDFN	パッケージ: -	在庫16,482	MOSFET (Metal Oxide)	40 V	31A (Ta), 205A (Tc)	4.5V, 10V	2V @ 51µA	55 nC @ 10 V	3900 pF @ 20 V	±20V	-	2.5W (Ta), 107W (Tc)	1.35mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PG-TTFN-9-1	8-PowerTDFN
IRF7413ZTRPBFXTMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8-902 Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: -	在庫12,000	MOSFET (Metal Oxide)	30 V	13A (Ta)	4.5V, 10V	2.25V @ 250µA	14 nC @ 4.5 V	1210 pF @ 15 V	±20V	-	2.5W (Ta)	10mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8-902	8-SOIC (0.154", 3.90mm Width)
IPP019N06NF2SAKMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 129µA Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-U05 Package / Case: TO-220-3	パッケージ: -	在庫2,232	MOSFET (Metal Oxide)	60 V	33A (Ta), 185A (Tc)	6V, 10V	3.3V @ 129µA	162 nC @ 10 V	7300 pF @ 30 V	±20V	-	3.8W (Ta), 188W (Tc)	1.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-U05	TO-220-3
ISC009N06LM5ATMA1	Infineon Technologies	MOSFET N-CH 60V 41A/348A TSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 147µA Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-3 Package / Case: 8-PowerTDFN	パッケージ: -	在庫8,334	MOSFET (Metal Oxide)	60 V	41A (Ta), 348A (Tc)	4.5V, 10V	2.3V @ 147µA	209 nC @ 10 V	13000 pF @ 30 V	±20V	-	3W (Ta), 214W (Tc)	0.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN
IRFP22N50APBFXKMA1	Infineon Technologies	MOSFET N-CH 500V 22A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 277W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	4V @ 250µA	120 nC @ 10 V	3450 pF @ 25 V	±30V	-	277W (Tc)	230mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPW65R125CFD7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 420µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	650 V	19A (Tc)	10V	4.5V @ 420µA	36 nC @ 10 V	1694 pF @ 400 V	±20V	-	98W (Tc)	125mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPF009N04NF2SATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 249µA Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-U02 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	パッケージ: -	在庫2,262	MOSFET (Metal Oxide)	40 V	49A (Ta), 302A (Tc)	6V, 10V	3.4V @ 249µA	315 nC @ 10 V	15000 pF @ 20 V	±20V	-	3.8W (Ta), 375W (Tc)	0.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-U02	TO-263-7, D2PAK (6 Leads + Tab)
IPTG018N10NM5ATMA1	Infineon Technologies	TRENCH >=100V PG-HSOG-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 273A Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 202µA Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 273W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	パッケージ: -	在庫5,400	MOSFET (Metal Oxide)	100 V	32A (Ta), 273A Tc)	6V, 10V	3.8V @ 202µA	152 nC @ 10 V	11000 pF @ 50 V	±20V	-	3.8W (Ta), 273W (Tc)	1.8mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8-1	8-PowerSMD, Gull Wing
IPB110N06L-G	Infineon Technologies	MOSFET N-CH 60V 78A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 11mOhm @ 78A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	60 V	78A (Tc)	-	2V @ 94µA	79 nC @ 10 V	2700 pF @ 30 V	-	-	-	11mOhm @ 78A, 10V	-	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFB4228PBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-904 Package / Case: TO-220-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	150 V	83A (Tc)	10V	5V @ 250µA	107 nC @ 10 V	4530 pF @ 25 V	±30V	-	330W (Tc)	15mOhm @ 33A, 10V	-40°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-904	TO-220-3
64-2120PBF	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC034N10LS5ATMA1	Infineon Technologies	MOSFET N-CH 100V 19A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	パッケージ: -	在庫80,733	MOSFET (Metal Oxide)	100 V	19A (Ta), 100A (Tc)	4.5V, 10V	2.3V @ 115µA	46 nC @ 4.5 V	6500 pF @ 50 V	±20V	-	2.5W (Ta), 156W (Tc)	3.4mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
IPD70P04P4L08ATMA2	Infineon Technologies	MOSFET P-CH 40V 70A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫33,177	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	2.2V @ 120µA	92 nC @ 10 V	5430 pF @ 25 V	+5V, -16V	-	75W (Tc)	7.8mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63