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SIPC69SN60C3X2SA2

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IMZA75R016M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

パッケージ: -

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-

Through Hole

PG-TO247-4

TO-247-4

BSC059N04LS6ATMA1

Infineon Technologies

MOSFET N-CH 40V 17A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 49A (Tc), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

パッケージ: -

在庫151,521

MOSFET (Metal Oxide)

40 V

17A (Ta), 49A (Tc), 59A (Tc)

4.5V, 10V

2.3V @ 250µA

9.4 nC @ 10 V

830 pF @ 20 V

±20V

-

3W (Ta), 38W (Tc)

5.9mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

BSP321PL6327

Infineon Technologies

P-CHANNEL MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 380µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4-21
Package / Case: TO-261-4, TO-261AA

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MOSFET (Metal Oxide)

100 V

980mA (Tc)

10V

4V @ 380µA

12 nC @ 10 V

319 pF @ 25 V

±20V

-

1.8W (Ta)

900mOhm @ 980mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4-21

TO-261-4, TO-261AA

BSO051N03MSGXUMA1

Infineon Technologies

SMALL SIGNAL FIELD-EFFECT TRANSI

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)

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MOSFET (Metal Oxide)

30 V

14A

-

2V @ 250µA

-

3200 pF @ 15 V

±20V

-

2.5W

5.1mOhm @ 18A, 10V

-55°C ~ 150°C

Surface Mount

PG-DSO-8

8-SOIC (0.154", 3.90mm Width)

ISZ024N06NM6ATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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IPD70P04P409ATMA2

Infineon Technologies

MOSFET P-CH 40V 73A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫26,742

MOSFET (Metal Oxide)

40 V

73A (Tc)

-

4V @ 120µA

70 nC @ 10 V

4810 pF @ 25 V

±20V

-

75W (Tc)

8.9mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IAUMN10S5N017GATMA1

Infineon Technologies

MOSFET_(75V 120V(

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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IRLML2803TR

Infineon Technologies

MOSFET N-CH 30V 1.2A SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro3™/SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

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MOSFET (Metal Oxide)

30 V

1.2A (Ta)

-

1V @ 250µA

5 nC @ 10 V

85 pF @ 25 V

-

250mOhm @ 910mA, 10V

-

Surface Mount

Micro3™/SOT-23

TO-236-3, SC-59, SOT-23-3

IAUA250N08S5N018AUMA1

Infineon Technologies

MOSFET_(75V 120V( PG-HSOF-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-4
Package / Case: 5-PowerSFN

パッケージ: -

在庫5,910

MOSFET (Metal Oxide)

80 V

250A (Tj)

6V, 10V

3.8V @ 150µA

125 nC @ 10 V

8715 pF @ 40 V

±20V

-

238W (Tc)

1.8mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-4

5-PowerSFN

IAUS300N08S5N011ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-HSOG-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8-1
Package / Case: 8-PowerSMD, Gull Wing

パッケージ: -

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MOSFET (Metal Oxide)

80 V

410A (Tj)

6V, 10V

3.8V @ 275µA

231 nC @ 10 V

16250 pF @ 40 V

±20V

-

375W (Tc)

1.1mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOG-8-1

8-PowerSMD, Gull Wing

IQE018N06NM6ATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IPD35N12S3L24ATMA2

Infineon Technologies

MOSFET_(120V 300V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2691 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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MOSFET (Metal Oxide)

120 V

35A (Tc)

4.5V, 10V

2.4V @ 39µA

39 nC @ 10 V

2691 pF @ 25 V

±20V

-

71W (Tc)

24mOhm @ 35A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPA050N10NM5SXKSA1

Infineon Technologies

MOSFET N-CH 100V 66A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 33A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

パッケージ: -

在庫603

MOSFET (Metal Oxide)

100 V

66A (Tc)

6V, 10V

3.8V @ 84µA

68 nC @ 10 V

4700 pF @ 50 V

±20V

-

38W (Tc)

5mOhm @ 33A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220 Full Pack

TO-220-3 Full Pack

IMBG120R234M2HXTMA1

Infineon Technologies

SIC DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.1V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 800 V
Vgs (Max): +20V, -7V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 233.9mOhm @ 3A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

パッケージ: -

在庫2,835

SiC (Silicon Carbide Junction Transistor)

1200 V

8.1A (Tc)

15V, 18V

5.1V @ 900µA

7.9 nC @ 18 V

290 pF @ 800 V

+20V, -7V

-

80W (Tc)

233.9mOhm @ 3A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IMBF170R450M1XTMA1

Infineon Technologies

SICFET N-CH 1700V 9.8A TO263-7

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
Vgs (Max): +20V, -10V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-13
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

パッケージ: -

在庫4,575

SiCFET (Silicon Carbide)

1700 V

9.8A (Tc)

12V, 15V

5.7V @ 2.5mA

11 nC @ 12 V

610 pF @ 1000 V

+20V, -10V

-

107W (Tc)

450mOhm @ 2A, 15V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-13

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IPF067N20NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs(th) (Max) @ Id: 4.5V @ 253µA
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

パッケージ: -

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MOSFET (Metal Oxide)

200 V

15.4A (Ta), 138A (Tc)

10V, 15V

4.5V @ 253µA

108 nC @ 10 V

7300 pF @ 100 V

±20V

-

3.8W (Ta), 300W (Tc)

6.2mOhm @ 100A, 15V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-3

TO-263-7, D2PAK (6 Leads + Tab)

IPP881NE7NGXKSA1

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IIPC20S4N04X2SA2

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

BSC037N08NS5TATMA1

Infineon Technologies

MOSFET N-CH 80V 22A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-7
Package / Case: 8-PowerTDFN

パッケージ: -

在庫15,000

MOSFET (Metal Oxide)

80 V

22A (Ta), 100A (Tc)

6V, 10V

3.8V @ 72µA

58 nC @ 10 V

4200 pF @ 40 V

±20V

-

3W (Ta), 136W (Tc)

3.7mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-7

8-PowerTDFN

IAUC40N08S5L140ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-33
Package / Case: 8-PowerTDFN

パッケージ: -

在庫13,632

MOSFET (Metal Oxide)

80 V

40A (Tc)

4.5V, 10V

2V @ 15µA

18.6 nC @ 10 V

1078 pF @ 40 V

±20V

-

56W (Tc)

14mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-33

8-PowerTDFN

SIPC69SN60C3X3SA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IPW50R280CEFKSA1

Infineon Technologies

MOSFET N-CH 500V 13A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 92W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

パッケージ: -

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MOSFET (Metal Oxide)

500 V

13A (Tc)

13V

3.5V @ 350µA

32.6 nC @ 10 V

773 pF @ 100 V

±20V

-

92W (Tc)

280mOhm @ 4.2A, 13V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPT60R022S7XTMA1

Infineon Technologies

MOSFET N-CH 600V 23A 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-2
Package / Case: 8-PowerSFN

パッケージ: -

在庫3,384

MOSFET (Metal Oxide)

600 V

23A (Tc)

12V

4.5V @ 1.44mA

150 nC @ 12 V

5639 pF @ 300 V

±20V

-

390W (Tc)

22mOhm @ 23A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8-2

8-PowerSFN

IPSA70R2K0P7SAKMA1

Infineon Technologies

MOSFET N-CH 700V 3A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 17.6W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3-347
Package / Case: TO-251-3 Stub Leads, IPAK

パッケージ: -

在庫237

MOSFET (Metal Oxide)

700 V

3A (Tc)

10V

3.5V @ 30µA

3.8 nC @ 400 V

130 pF @ 400 V

±16V

-

17.6W (Tc)

2Ohm @ 500mA, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO251-3-347

TO-251-3 Stub Leads, IPAK

IRFH5006TR2PBF

Infineon Technologies

MOSFET N-CH 60V 100A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

パッケージ: -

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MOSFET (Metal Oxide)

60 V

21A (Ta), 100A (Tc)

-

4V @ 150µA

100 nC @ 10 V

4175 pF @ 30 V

-

4.1mOhm @ 50A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerTDFN

IPB60R360CFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 7A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

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MOSFET (Metal Oxide)

600 V

7A (Tc)

10V

4.5V @ 140µA

14 nC @ 10 V

679 pF @ 400 V

±20V

-

43W (Tc)

360mOhm @ 2.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB80R290C3AATMA2

Infineon Technologies

MOSFET N-CH 800V 17A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

在庫28,623

MOSFET (Metal Oxide)

800 V

17A (Tc)

10V

3.9V @ 1mA

117 nC @ 10 V

2300 pF @ 100 V

±20V

-

227W (Tc)

290mOhm @ 11A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

部品番号	メーカ	説明	パッケージ	在庫	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIPC69SN60C3X2SA2	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IMZA75R016M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	PG-TO247-4	TO-247-4
BSC059N04LS6ATMA1	Infineon Technologies	MOSFET N-CH 40V 17A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 49A (Tc), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	パッケージ: -	在庫151,521	MOSFET (Metal Oxide)	40 V	17A (Ta), 49A (Tc), 59A (Tc)	4.5V, 10V	2.3V @ 250µA	9.4 nC @ 10 V	830 pF @ 20 V	±20V	-	3W (Ta), 38W (Tc)	5.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
BSP321PL6327	Infineon Technologies	P-CHANNEL MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 980mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 380µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4-21 Package / Case: TO-261-4, TO-261AA	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	100 V	980mA (Tc)	10V	4V @ 380µA	12 nC @ 10 V	319 pF @ 25 V	±20V	-	1.8W (Ta)	900mOhm @ 980mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4-21	TO-261-4, TO-261AA
BSO051N03MSGXUMA1	Infineon Technologies	SMALL SIGNAL FIELD-EFFECT TRANSI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	30 V	14A	-	2V @ 250µA	-	3200 pF @ 15 V	±20V	-	2.5W	5.1mOhm @ 18A, 10V	-55°C ~ 150°C	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
ISZ024N06NM6ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD70P04P409ATMA2	Infineon Technologies	MOSFET P-CH 40V 73A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫26,742	MOSFET (Metal Oxide)	40 V	73A (Tc)	-	4V @ 120µA	70 nC @ 10 V	4810 pF @ 25 V	±20V	-	75W (Tc)	8.9mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IAUMN10S5N017GATMA1	Infineon Technologies	MOSFET_(75V 120V( FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLML2803TR	Infineon Technologies	MOSFET N-CH 30V 1.2A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro3™/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	-	1V @ 250µA	5 nC @ 10 V	85 pF @ 25 V	-	-	-	250mOhm @ 910mA, 10V	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
IAUA250N08S5N018AUMA1	Infineon Technologies	MOSFET_(75V 120V( PG-HSOF-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 238W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-4 Package / Case: 5-PowerSFN	パッケージ: -	在庫5,910	MOSFET (Metal Oxide)	80 V	250A (Tj)	6V, 10V	3.8V @ 150µA	125 nC @ 10 V	8715 pF @ 40 V	±20V	-	238W (Tc)	1.8mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-4	5-PowerSFN
IAUS300N08S5N011ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-HSOG-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 410A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	80 V	410A (Tj)	6V, 10V	3.8V @ 275µA	231 nC @ 10 V	16250 pF @ 40 V	±20V	-	375W (Tc)	1.1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8-1	8-PowerSMD, Gull Wing
IQE018N06NM6ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD35N12S3L24ATMA2	Infineon Technologies	MOSFET_(120V 300V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2691 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	120 V	35A (Tc)	4.5V, 10V	2.4V @ 39µA	39 nC @ 10 V	2691 pF @ 25 V	±20V	-	71W (Tc)	24mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPA050N10NM5SXKSA1	Infineon Technologies	MOSFET N-CH 100V 66A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 84µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	パッケージ: -	在庫603	MOSFET (Metal Oxide)	100 V	66A (Tc)	6V, 10V	3.8V @ 84µA	68 nC @ 10 V	4700 pF @ 50 V	±20V	-	38W (Tc)	5mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IMBG120R234M2HXTMA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.1V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 800 V Vgs (Max): +20V, -7V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 233.9mOhm @ 3A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	パッケージ: -	在庫2,835	SiC (Silicon Carbide Junction Transistor)	1200 V	8.1A (Tc)	15V, 18V	5.1V @ 900µA	7.9 nC @ 18 V	290 pF @ 800 V	+20V, -7V	-	80W (Tc)	233.9mOhm @ 3A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBF170R450M1XTMA1	Infineon Technologies	SICFET N-CH 1700V 9.8A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-13 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	パッケージ: -	在庫4,575	SiCFET (Silicon Carbide)	1700 V	9.8A (Tc)	12V, 15V	5.7V @ 2.5mA	11 nC @ 12 V	610 pF @ 1000 V	+20V, -10V	-	107W (Tc)	450mOhm @ 2A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-13	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPF067N20NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4.5V @ 253µA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	200 V	15.4A (Ta), 138A (Tc)	10V, 15V	4.5V @ 253µA	108 nC @ 10 V	7300 pF @ 100 V	±20V	-	3.8W (Ta), 300W (Tc)	6.2mOhm @ 100A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)
IPP881NE7NGXKSA1	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IIPC20S4N04X2SA2	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC037N08NS5TATMA1	Infineon Technologies	MOSFET N-CH 80V 22A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 72µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	パッケージ: -	在庫15,000	MOSFET (Metal Oxide)	80 V	22A (Ta), 100A (Tc)	6V, 10V	3.8V @ 72µA	58 nC @ 10 V	4200 pF @ 40 V	±20V	-	3W (Ta), 136W (Tc)	3.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
IAUC40N08S5L140ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	パッケージ: -	在庫13,632	MOSFET (Metal Oxide)	80 V	40A (Tc)	4.5V, 10V	2V @ 15µA	18.6 nC @ 10 V	1078 pF @ 40 V	±20V	-	56W (Tc)	14mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
SIPC69SN60C3X3SA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW50R280CEFKSA1	Infineon Technologies	MOSFET N-CH 500V 13A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	500 V	13A (Tc)	13V	3.5V @ 350µA	32.6 nC @ 10 V	773 pF @ 100 V	±20V	-	92W (Tc)	280mOhm @ 4.2A, 13V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPT60R022S7XTMA1	Infineon Technologies	MOSFET N-CH 600V 23A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 1.44mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-2 Package / Case: 8-PowerSFN	パッケージ: -	在庫3,384	MOSFET (Metal Oxide)	600 V	23A (Tc)	12V	4.5V @ 1.44mA	150 nC @ 12 V	5639 pF @ 300 V	±20V	-	390W (Tc)	22mOhm @ 23A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-2	8-PowerSFN
IPSA70R2K0P7SAKMA1	Infineon Technologies	MOSFET N-CH 700V 3A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 17.6W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3-347 Package / Case: TO-251-3 Stub Leads, IPAK	パッケージ: -	在庫237	MOSFET (Metal Oxide)	700 V	3A (Tc)	10V	3.5V @ 30µA	3.8 nC @ 400 V	130 pF @ 400 V	±16V	-	17.6W (Tc)	2Ohm @ 500mA, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3-347	TO-251-3 Stub Leads, IPAK
IRFH5006TR2PBF	Infineon Technologies	MOSFET N-CH 60V 100A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 30 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	60 V	21A (Ta), 100A (Tc)	-	4V @ 150µA	100 nC @ 10 V	4175 pF @ 30 V	-	-	-	4.1mOhm @ 50A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IPB60R360CFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 7A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	4.5V @ 140µA	14 nC @ 10 V	679 pF @ 400 V	±20V	-	43W (Tc)	360mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB80R290C3AATMA2	Infineon Technologies	MOSFET N-CH 800V 17A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	在庫28,623	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	3.9V @ 1mA	117 nC @ 10 V	2300 pF @ 100 V	±20V	-	227W (Tc)	290mOhm @ 11A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB