ページ 14 - Infineon Technologies 製品 - トランジスタ - IGBT - シングル | Heisener Electronics
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Infineon Technologies 製品 - トランジスタ - IGBT - シングル

レコード 1,429
ページ  14/52
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在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IPB133N12NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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-
-
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-
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-
-
-
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-
-
-
AIMBG75R040M1HXTMA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫2,997
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AIKB30N65DF5ATMA1
Infineon Technologies

IC DISCRETE 650V TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 55 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 188 W
  • Switching Energy: 330µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 25ns/188ns
  • Test Condition: 400V, 15A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 67 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
パッケージ: -
在庫5,049
650 V
55 A
90 A
2.1V @ 15V, 30A
188 W
330µJ (on), 100µJ (off)
Standard
70 nC
25ns/188ns
400V, 15A, 23Ohm, 15V
67 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
IGC36T120T8LX1SA1
Infineon Technologies

IGBT 1200V 35A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 35A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
1200 V
-
105 A
2.07V @ 15V, 35A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IHFW40N65R5SXKSA1
Infineon Technologies

IGBT TRENCH FS 650V 61A HSIP247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 61 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 108 W
  • Switching Energy: 1.52mJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 142 nC
  • Td (on/off) @ 25°C: 44ns/363ns
  • Test Condition: 400V, 40A, 23.1Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
パッケージ: -
在庫1,218
650 V
61 A
120 A
2V @ 15V, 40A
108 W
1.52mJ (on), 700µJ (off)
Standard
142 nC
44ns/363ns
400V, 40A, 23.1Ohm, 15V
103 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
IQFH68N06NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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SIGC12T60SNCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 29ns/266ns
  • Test Condition: 400V, 10A, 25Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
29ns/266ns
400V, 10A, 25Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC12T60SNCX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 29ns/266ns
  • Test Condition: 400V, 10A, 25Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
29ns/266ns
400V, 10A, 25Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC12T60SNCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 29ns/266ns
  • Test Condition: 400V, 10A, 25Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
29ns/266ns
400V, 10A, 25Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IKD04N60RC2ATMA1
Infineon Technologies

IGBT TRENCH FS 600V 8A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 12 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
  • Power - Max: 36.6 W
  • Switching Energy: 100µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 24 nC
  • Td (on/off) @ 25°C: 4ns/90ns
  • Test Condition: 400V, 4A, 49Ohm, 15V
  • Reverse Recovery Time (trr): 80 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
パッケージ: -
在庫44,331
600 V
8 A
12 A
2.3V @ 15V, 4A
36.6 W
100µJ (on), 40µJ (off)
Standard
24 nC
4ns/90ns
400V, 4A, 49Ohm, 15V
80 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
IPT009N08NM6ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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IKA15N65ET6XKSA2
Infineon Technologies

IGBT TRENCH FS 650V 17A TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 17 A
  • Current - Collector Pulsed (Icm): 57.5 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
  • Power - Max: 45 W
  • Switching Energy: 230µJ (on), 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 30ns/117ns
  • Test Condition: 400V, 11.5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 69 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3-FP
パッケージ: -
在庫1,464
650 V
17 A
57.5 A
1.9V @ 15V, 11.5A
45 W
230µJ (on), 110µJ (off)
Standard
37 nC
30ns/117ns
400V, 11.5A, 47Ohm, 15V
69 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3-FP
SIGC15T60EX7SA1
Infineon Technologies

IGBT 3 CHIP 600V 30A WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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-
-
-
-
-
-
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SIGC15T60EX7SA2
Infineon Technologies

IGBT 3 CHIP 600V 30A WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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-
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-
IGC08T65U12QX7SA1
Infineon Technologies

IGBT CHIP SMD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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-
-
-
-
-
-
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-
SIGC28T60EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
50 A
150 A
1.85V @ 15V, 50A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IHW40N140R5LXKSA1
Infineon Technologies

IGBT 1400V 80A TO247-44

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1400 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
  • Power - Max: 366 W
  • Switching Energy: -, 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 260 nC
  • Td (on/off) @ 25°C: -/225ns
  • Test Condition: 25V, 40A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-44
パッケージ: -
在庫639
1400 V
80 A
120 A
1.95V @ 15V, 40A
366 W
-, 240µJ (off)
Standard
260 nC
-/225ns
25V, 40A, 2.2Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-44
IKWH20N65WR6XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 55A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 55 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 136 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 97 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
パッケージ: -
在庫423
650 V
55 A
60 A
1.7V @ 15V, 20A
136 W
-
Standard
97 nC
-
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
IRG4BC30SPBF-INF
Infineon Technologies

IGBT 600V 34A TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 34 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100 W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: -
Request a Quote
600 V
34 A
-
1.6V @ 15V, 18A
100 W
260µJ (on), 3.45mJ (off)
Standard
-
22ns/540ns
480V, 18A, 23Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IHW40N135R5XKSA1
Infineon Technologies

IGBT TRENCH FS 1350V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
  • Power - Max: 394 W
  • Switching Energy: 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 305 nC
  • Td (on/off) @ 25°C: -/410ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: -
在庫1,059
1350 V
80 A
120 A
1.95V @ 15V, 40A
394 W
2mJ (off)
Standard
305 nC
-/410ns
600V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IGC11T60TEX7SA1
Infineon Technologies

IGBT 600V 11A WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AIMZA75R008M1HXKSA1
Infineon Technologies

AUTOMOTIVE_SICMOS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGC20B60KB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 4A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
20 A
-
1.3V @ 15V, 4A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IKY75N120CS6XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 150A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 880 W
  • Switching Energy: 2.2mJ (on), 2.95mJ (off)
  • Input Type: Standard
  • Gate Charge: 530 nC
  • Td (on/off) @ 25°C: 32ns/300ns
  • Test Condition: 600V, 75A, 4Ohm, 15V
  • Reverse Recovery Time (trr): 205 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-2
パッケージ: -
在庫774
1200 V
150 A
300 A
2.15V @ 15V, 75A
880 W
2.2mJ (on), 2.95mJ (off)
Standard
530 nC
32ns/300ns
600V, 75A, 4Ohm, 15V
205 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-2
IKB40N65EF5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 74A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 74 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250 W
  • Switching Energy: 420µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 22ns/160ns
  • Test Condition: 400V, 40A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 83 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
パッケージ: -
在庫5,202
650 V
74 A
160 A
2.1V @ 15V, 40A
250 W
420µJ (on), 100µJ (off)
Standard
95 nC
22ns/160ns
400V, 40A, 15Ohm, 15V
83 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
SIGC06T60EX1SA2
Infineon Technologies

IGBT TRENCH FS 600V 10A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
10 A
30 A
1.9V @ 15V, 10A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC25T60NCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 30A, 8.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
30 A
90 A
2.5V @ 15V, 30A
-
-
Standard
-
21ns/110ns
300V, 30A, 8.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC25T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 30A, 8.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
30 A
90 A
2.5V @ 15V, 30A
-
-
Standard
-
21ns/110ns
300V, 30A, 8.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die