ページ 51 - Infineon Technologies 製品 - トランジスタ - IGBT - シングル

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGB4710DPBF	Infineon Technologies	IGBT 600V TO220 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,904	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRGP4269DPBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRGP4263D1PBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 192A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A Power - Max: 325W Switching Energy: 2.9mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 145nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	パッケージ: TO-247-3	在庫5,456	650V	90A	192A	2.1V @ 15V, 48A	325W	2.9mJ (on), 1.4mJ (off)	Standard	145nC	70ns/140ns	400V, 48A, 10 Ohm, 15V	170ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
IRGP4269D-EPBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRGPS47160DPBF	Infineon Technologies	IGBT 600V TO247 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	パッケージ: TO-247-3	在庫6,688	650V	160A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-247-3	TO-247
IRGIB4615DPBF	Infineon Technologies	IGBT 600V FULLPAK220 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: 145µJ (on), 70µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	パッケージ: TO-220-3 Full Pack	在庫5,840	600V	15A	-	-	-	145µJ (on), 70µJ (off)	Standard	-	-	-	-	-	Through Hole	TO-220-3 Full Pack	TO-220FP
IRGIB4610DPBF	Infineon Technologies	IGBT 600V FULLPAK220 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: 122µJ (on), 56µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	パッケージ: TO-220-3 Full Pack	在庫5,456	600V	10A	-	-	-	122µJ (on), 56µJ (off)	Standard	-	-	-	-	-	Through Hole	TO-220-3 Full Pack	TO-220FP
IRGIB4607DPBF	Infineon Technologies	IGBT 600V FULLPAK220 COPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 7A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: 62µJ (on), 140µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	パッケージ: TO-220-3 Full Pack	在庫6,880	600V	7A	-	-	-	62µJ (on), 140µJ (off)	Standard	-	-	-	-	-	Through Hole	TO-220-3 Full Pack	TO-220FP
IRGH4607DPBF	Infineon Technologies	IGBT 600V 8PQFN IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,144	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRGH4610DPBF	Infineon Technologies	IGBT 600V 8PQFN IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,040	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRGIB4640DPBF	Infineon Technologies	IGBT 600V 65A 250W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Power - Max: 250W Switching Energy: 115µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 41ns/104ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 8-PowerTDFN Supplier Device Package: PG-TO-220-3	パッケージ: 8-PowerTDFN	在庫4,688	600V	65A	72A	1.9V @ 15V, 24A	250W	115µJ (on), 600µJ (off)	Standard	75nC	41ns/104ns	400V, 24A, 10 Ohm, 15V	89ns	-55°C ~ 175°C (TJ)	Through Hole	8-PowerTDFN	PG-TO-220-3
IRGIB4630DPBF	Infineon Technologies	IGBT 600V 47A 206W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 47A Current - Collector Pulsed (Icm): 54A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Power - Max: 206W Switching Energy: 95µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 40ns/105ns Test Condition: 400V, 18A, 22 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack	パッケージ: TO-220-3 Full Pack	在庫6,672	600V	47A	54A	1.95V @ 15V, 18A	206W	95µJ (on), 350µJ (off)	Standard	35nC	40ns/105ns	400V, 18A, 22 Ohm, 15V	100ns	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220 Full Pack
IRGIB4620DPBF	Infineon Technologies	IGBT 600V 32A 140W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Power - Max: 140W Switching Energy: 185µJ (on), 355µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 31ns/83ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack	パッケージ: TO-220-3 Full Pack	在庫5,344	600V	32A	36A	1.85V @ 15V, 12A	140W	185µJ (on), 355µJ (off)	Standard	25nC	31ns/83ns	400V, 12A, 22 Ohm, 15V	68ns	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220 Full Pack
IRG8P75N65UD1PBF	Infineon Technologies	G8 650V 75A CO-PAK-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,496	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8P75N65UD1-EPBF	Infineon Technologies	G8 650V 75A CO-PAK-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,408	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8P45N65UD1PBF	Infineon Technologies	G8 650V 45A CO-PAK-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫6,352	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8P45N65UD1-EPBF	Infineon Technologies	G8 650V 45A CO-PAK-247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,120	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8CH42K10F	Infineon Technologies	IGBT 1200V 40A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 40ns/240ns Test Condition: 600V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫3,536	1200V	-	-	2V @ 15V, 40A	-	-	Standard	230nC	40ns/240ns	600V, 40A, 5 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG8CH42K10D	Infineon Technologies	IGBT 1200V 40A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,128	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8CH29K10F	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫4,960	1200V	-	-	2V @ 15V, 25A	-	-	Standard	160nC	40ns/245ns	600V, 25A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG8CH29K10D	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,976	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8CH20K10F	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 20ns/170ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫4,304	1200V	-	-	2V @ 15V, 15A	-	-	Standard	90nC	20ns/170ns	600V, 15A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG8CH20K10D	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,896	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8CH15K10F	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 15ns/170ns Test Condition: 600V, 10A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫7,024	1200V	-	-	2V @ 15V, 10A	-	-	Standard	65nC	15ns/170ns	600V, 10A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG8CH15K10D	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,864	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8CH10K10F	Infineon Technologies	IGBT 1200V 5A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 600V, 5A, 47 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫2,512	1200V	-	-	2V @ 15V, 5A	-	-	Standard	30nC	20ns/160ns	600V, 5A, 47 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG8CH106K10F	Infineon Technologies	IGBT 1200V 110A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 110A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 700nC Td (on/off) @ 25°C: 80ns/380ns Test Condition: 600V, 110A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫6,112	1200V	-	-	2V @ 15V, 110A	-	-	Standard	700nC	80ns/380ns	600V, 110A, 1 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG7PK42UD1PBF	Infineon Technologies	IGBT 1200V DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,952	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-