ページ 104 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
IHY15N120R3XKSA1	Infineon Technologies	IGBT 1200V 30A 254W TO247HC-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Power - Max: 254W Switching Energy: 700µJ (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: -/300ns Test Condition: 600V, 15A, 14.6 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PG-TO247HC-3	パッケージ: TO-247-3 Variant	在庫7,440
IRG4BC30W-STRRP	Infineon Technologies	IGBT 600V 23A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫2,592
IKW50N60T	Infineon Technologies	IGBT 600V 80A 333W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 333W Switching Energy: 2.6mJ Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 26ns/299ns Test Condition: 400V, 50A, 7 Ohm, 15V Reverse Recovery Time (trr): 143ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	パッケージ: TO-247-3	在庫167,304
IPA60R520CPXKSA1	Infineon Technologies	MOSFET N-CH 600V 6.8A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫5,840
SPI73N03S2L-08	Infineon Technologies	MOSFET N-CH 30V 73A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 46.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫2,608
IRFR5305TRRPBF	Infineon Technologies	MOSFET P-CH 55V 31A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫15,720
AUIRF1404ZL	Infineon Technologies	MOSFET N-CH 40V 160A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA	在庫79,200
IRF135B203	Infineon Technologies	MOSFET NCH 135V 129A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 135V Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 441W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 77A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫12,648
IRFR120NPBF	Infineon Technologies	MOSFET N-CH 100V 9.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫428,208
IPN70R1K5CEATMA1	Infineon Technologies	MOSFET NCH 700V 5.4A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	パッケージ: SOT-223-3	在庫27,516
IPG20N06S415AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	パッケージ: 8-PowerVDFN	在庫5,680
IRU1206-25CYTR	Infineon Technologies	IC REG LINEAR 2.5V 1A SOT223 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 12V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.65V @ 1A Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 3mA ~ 50mA PSRR: - Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	パッケージ: TO-261-4, TO-261AA	在庫36,000
IR3842WMTRPBF	Infineon Technologies	IC REG BUCK ADJ 4A SYNC 15QFN Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 1.5V Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): 0.7V Voltage - Output (Max): 14.4V Current - Output: 4A Frequency - Switching: 225kHz ~ 1.65MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 15-PowerVQFN Supplier Device Package: 15-PQFN (5x6)	パッケージ: 15-PowerVQFN	在庫256,920
IPS7071GPBF	Infineon Technologies	IC IPS SW HI SIDE DVR 1CH 8-SOIC Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 6 V ~ 35 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Rds On (Typ): 80 mOhm Input Type: Non-Inverting Features: Auto Restart Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫44,460
IRSM515-055DA	Infineon Technologies	IC MOTOR DRIVER 500V 23DIP Output Configuration: Half Bridge (3) Applications: AC Motors Interface: Logic Load Type: Inductive Technology: UMOS Rds On (Typ): 1.3 Ohm Current - Output / Channel: 2.4A Current - Peak Output: 15A Voltage - Supply: 13.5 V ~ 16.5 V Voltage - Load: 400V (Max) Operating Temperature: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit Fault Protection: UVLO Mounting Type: Through Hole Package / Case: 23-DIP Module Supplier Device Package: 23-DIP	パッケージ: 23-DIP Module	在庫6,400
ICE2QR1065ZXKLA1	Infineon Technologies	IC CTRLR SMPS QUASI-RESON 7DIP Output Isolation: Isolated Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback Voltage - Start Up: 18V Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V Duty Cycle: 50% Frequency - Switching: 52kHz Power (Watts): 41W Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Control Features: - Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Supplier Device Package: 7-DIP Mounting Type: Through Hole	パッケージ: 8-DIP (0.300", 7.62mm), 7 Leads	在庫3,520
XMC4104Q48F128ABXUMA1	Infineon Technologies	IC MCU 32BIT 128KB FLASH 48VQFN Core Processor: ARM? Cortex?-M4 Core Size: 32-Bit Speed: 80MHz Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Number of I/O: 21 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 20K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 9x12b; D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-53	パッケージ: 48-VFQFN Exposed Pad	在庫2,336
XMC7100D-F176K4160AA	Infineon Technologies	IC MCU 32BT 4.063MB FLSH 176QFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 Core Size: 32-Bit Dual-Core Speed: 100MHz, 250MHz Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT Number of I/O: 148 Program Memory Size: 4.063MB (4.063M x 8) Program Memory Type: FLASH EEPROM Size: 256K x 8 RAM Size: 768K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 64x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Supplier Device Package: 176-TEQFP (24x24)	パッケージ: -	在庫1,032
IMD111T6F040XUMA1	Infineon Technologies	IMOTION Motor Type - Stepper: Multiphase Motor Type - AC, DC: AC, Synchronous Function: Controller - Speed Output Configuration: Half Bridge (3) Interface: Serial, UART Technology: IGBT Step Resolution: - Applications: General Purpose Current - Output: - Voltage - Supply: 5.5V ~ 20V Voltage - Load: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 40-LQFP Supplier Device Package: PG-LQFP-40-1	パッケージ: -	在庫3,888
ISC080N10NM6ATMA1	Infineon Technologies	TRENCH >=100V PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	パッケージ: -	在庫18,366
F4250R07W2H5FB11BPSA1	Infineon Technologies	LOW POWER EASY IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫45
CY22392ZXC-386T	Infineon Technologies	IC 3PLL FLASH CLK GEN 16-TSSOP Type: PLL Clock Generator PLL: - Input: LVTTL Output: - Number of Circuits: - Ratio - Input:Output: - Differential - Input:Output: - Frequency - Max: 200MHz Divider/Multiplier: - Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: - Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	パッケージ: -	Request a Quote
IPSA70R1K4P7SAKMA1	Infineon Technologies	MOSFET N-CH 700V 4A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 22.7W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	パッケージ: -	Request a Quote
CY8C6247FTI-D52T	Infineon Technologies	IC MCU 32BIT 1MB FLASH 80WLCSP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 150MHz Connectivity: FIFO, I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, Temp Sensor, WDT Number of I/O: 62 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH EEPROM Size: 32K x 8 RAM Size: 288K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-XFBGA, WLCSP Supplier Device Package: 80-WLCSP (3.68x3.19)	パッケージ: -	Request a Quote
DD82S08KKHPSA1	Infineon Technologies	DIODE MODULE GP 800V 96A Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io) (per Diode): 96A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 800 V Operating Temperature - Junction: 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: -	Request a Quote
BSM50GD120DLCBPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2A-211 IGBT Type: - Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 85 A Power - Max: 350 W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Current - Collector Cutoff (Max): 84 µA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO2A	パッケージ: -	Request a Quote
BC860BWE6327	Infineon Technologies	TRANS PNP 45V 0.1A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: 330 mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	パッケージ: -	Request a Quote
D405N26EXPSA1	Infineon Technologies	RECTIFIER DIODE DISC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	Request a Quote

IHY15N120R3XKSA1

Infineon Technologies

IGBT 1200V 30A 254W TO247HC-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Power - Max: 254W
Switching Energy: 700µJ (off)
Input Type: Standard
Gate Charge: 165nC
Td (on/off) @ 25°C: -/300ns
Test Condition: 600V, 15A, 14.6 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PG-TO247HC-3

パッケージ: TO-247-3 Variant

在庫7,440

IRG4BC30W-STRRP

Infineon Technologies

IGBT 600V 23A 100W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 100W
Switching Energy: 130µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 51nC
Td (on/off) @ 25°C: 25ns/99ns
Test Condition: 480V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫2,592

IKW50N60T

Infineon Technologies

IGBT 600V 80A 333W TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 333W
Switching Energy: 2.6mJ
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 26ns/299ns
Test Condition: 400V, 50A, 7 Ohm, 15V
Reverse Recovery Time (trr): 143ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

パッケージ: TO-247-3

在庫167,304

IPA60R520CPXKSA1

Infineon Technologies

MOSFET N-CH 600V 6.8A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-FP
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫5,840

SPI73N03S2L-08

Infineon Technologies

MOSFET N-CH 30V 73A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs: 46.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 36A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫2,608

IRFR5305TRRPBF

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫15,720

AUIRF1404ZL

Infineon Technologies

MOSFET N-CH 40V 160A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

在庫79,200

IRF135B203

Infineon Technologies

MOSFET NCH 135V 129A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 135V
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 441W (Tc)
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 77A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫12,648

IRFR120NPBF

Infineon Technologies

MOSFET N-CH 100V 9.4A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 210 mOhm @ 5.6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫428,208

IPN70R1K5CEATMA1

Infineon Technologies

MOSFET NCH 700V 5.4A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: SOT-223-3

パッケージ: SOT-223-3

在庫27,516

IPG20N06S415AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

パッケージ: 8-PowerVDFN

在庫5,680

IRU1206-25CYTR

Infineon Technologies

IC REG LINEAR 2.5V 1A SOT223

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 12V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.65V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 3mA ~ 50mA
PSRR: -
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

在庫36,000

IR3842WMTRPBF

Infineon Technologies

IC REG BUCK ADJ 4A SYNC 15QFN

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 1.5V
Voltage - Input (Max): 16V
Voltage - Output (Min/Fixed): 0.7V
Voltage - Output (Max): 14.4V
Current - Output: 4A
Frequency - Switching: 225kHz ~ 1.65MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 15-PowerVQFN
Supplier Device Package: 15-PQFN (5x6)

パッケージ: 15-PowerVQFN

在庫256,920

IPS7071GPBF

Infineon Technologies

IC IPS SW HI SIDE DVR 1CH 8-SOIC

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 6 V ~ 35 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Rds On (Typ): 80 mOhm
Input Type: Non-Inverting
Features: Auto Restart
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫44,460

IRSM515-055DA

Infineon Technologies

IC MOTOR DRIVER 500V 23DIP

Output Configuration: Half Bridge (3)
Applications: AC Motors
Interface: Logic
Load Type: Inductive
Technology: UMOS
Rds On (Typ): 1.3 Ohm
Current - Output / Channel: 2.4A
Current - Peak Output: 15A
Voltage - Supply: 13.5 V ~ 16.5 V
Voltage - Load: 400V (Max)
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit
Fault Protection: UVLO
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Supplier Device Package: 23-DIP

パッケージ: 23-DIP Module

在庫6,400

ICE2QR1065ZXKLA1

Infineon Technologies

IC CTRLR SMPS QUASI-RESON 7DIP

Output Isolation: Isolated
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback
Voltage - Start Up: 18V
Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
Duty Cycle: 50%
Frequency - Switching: 52kHz
Power (Watts): 41W
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: -
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Supplier Device Package: 7-DIP
Mounting Type: Through Hole

パッケージ: 8-DIP (0.300", 7.62mm), 7 Leads

在庫3,520

XMC4104Q48F128ABXUMA1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 48VQFN

Core Processor: ARM? Cortex?-M4
Core Size: 32-Bit
Speed: 80MHz
Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Number of I/O: 21
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 20K x 8
Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
Data Converters: A/D 9x12b; D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-53

パッケージ: 48-VFQFN Exposed Pad

在庫2,336

XMC7100D-F176K4160AA

Infineon Technologies

IC MCU 32BT 4.063MB FLSH 176QFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 250MHz
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Number of I/O: 148
Program Memory Size: 4.063MB (4.063M x 8)
Program Memory Type: FLASH
EEPROM Size: 256K x 8
RAM Size: 768K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 64x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Supplier Device Package: 176-TEQFP (24x24)

パッケージ: -

在庫1,032

IMD111T6F040XUMA1

Infineon Technologies

IMOTION

Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Function: Controller - Speed
Output Configuration: Half Bridge (3)
Interface: Serial, UART
Technology: IGBT
Step Resolution: -
Applications: General Purpose
Current - Output: -
Voltage - Supply: 5.5V ~ 20V
Voltage - Load: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-LQFP
Supplier Device Package: PG-LQFP-40-1

パッケージ: -

在庫3,888

ISC080N10NM6ATMA1

Infineon Technologies

TRENCH >=100V PG-TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

パッケージ: -

在庫18,366

F4250R07W2H5FB11BPSA1

Infineon Technologies

LOW POWER EASY

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫45

CY22392ZXC-386T

Infineon Technologies

IC 3PLL FLASH CLK GEN 16-TSSOP

Type: PLL Clock Generator
PLL: -
Input: LVTTL
Output: -
Number of Circuits: -
Ratio - Input:Output: -
Differential - Input:Output: -
Frequency - Max: 200MHz
Divider/Multiplier: -
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

パッケージ: -

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IPSA70R1K4P7SAKMA1

Infineon Technologies

MOSFET N-CH 700V 4A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 22.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: -

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CY8C6247FTI-D52T

Infineon Technologies

IC MCU 32BIT 1MB FLASH 80WLCSP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 150MHz
Connectivity: FIFO, I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, Temp Sensor, WDT
Number of I/O: 62
Program Memory Size: 1MB (1M x 8)
Program Memory Type: FLASH
EEPROM Size: 32K x 8
RAM Size: 288K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-XFBGA, WLCSP
Supplier Device Package: 80-WLCSP (3.68x3.19)

パッケージ: -

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DD82S08KKHPSA1

Infineon Technologies

DIODE MODULE GP 800V 96A

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io) (per Diode): 96A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Operating Temperature - Junction: 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: -

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BSM50GD120DLCBPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2A-211

IGBT Type: -
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 85 A
Power - Max: 350 W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Current - Collector Cutoff (Max): 84 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO2A

パッケージ: -

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BC860BWE6327

Infineon Technologies

TRANS PNP 45V 0.1A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: 330 mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

パッケージ: -

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D405N26EXPSA1

Infineon Technologies

RECTIFIER DIODE DISC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

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