Infineon Technologies 製品

IRGB4061DPBF

Infineon Technologies

IGBT 600V 36A 206W TO220AB

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 36A
• Current - Collector Pulsed (Icm): 72A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
• Power - Max: 206W
• Switching Energy: 95µJ (on), 350µJ (off)
• Input Type: Standard
• Gate Charge: 35nC
• Td (on/off) @ 25°C: 40ns/105ns
• Test Condition: 400V, 18A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

IRGS30B60KTRRP

Infineon Technologies

IGBT 600V 78A 370W D2PAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 78A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
• Power - Max: 370W
• Switching Energy: 350µJ (on), 825µJ (off)
• Input Type: Standard
• Gate Charge: 102nC
• Td (on/off) @ 25°C: 46ns/185ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPD30N03S2L10T

Infineon Technologies

MOSFET N-CH 30V 30A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 41.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF6611TR1

Infineon Technologies

MOSFET N-CH 30V 32A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 27A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

パッケージ: DirectFET? Isometric MX

IPC65R080CFDX1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

IRL530NSTRLPBF

Infineon Technologies

MOSFET N-CH 100V 17A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPL60R255P6AUMA1

Infineon Technologies

MOSFET N-CH 600V 4VSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 530µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 126W (Tc)
• Rds On (Max) @ Id, Vgs: 255 mOhm @ 6.4A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-VSON-4
• Package / Case: 4-PowerTSFN

パッケージ: 4-PowerTSFN

PTFA080551EV4R250XTMA1

Infineon Technologies

IC FET RF LDMOS 55W H-36265-2

• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 18.5dB
• Voltage - Test: 28V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 600mA
• Power - Output: 55W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads
• Supplier Device Package: H-36265-2

パッケージ: 2-Flatpack, Fin Leads

BC858BWE6327HTSA1

Infineon Technologies

TRANS PNP 30V 0.1A SOT-323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

パッケージ: SC-70, SOT-323

TLE42742DV50ATMA1

Infineon Technologies

IC REG LINEAR 5V 400MA P-TO252-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 250mA
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 220µA ~ 30mA
• PSRR: 60dB (100Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: P-TO252-3

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

BTS3125TFATMA1

Infineon Technologies

IC SWITCH SMART LOWSIDE TO252-3

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 31V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 108 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3-313

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

XMC4500-F144K1024 AB

Infineon Technologies

IC MCU 32BIT 1MB FLASH 144LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 91
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 160K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 32x12b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-LQFP (20x20)

パッケージ: 144-LQFP Exposed Pad

SLE 66CX80PE DSO8

Infineon Technologies

IC SECURITY CTRLR 8/16BIT DS08

• Applications: Security
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

パッケージ: 8-SOIC (0.154", 3.90mm Width)

ESD8V0R1B-02LRH E6433

Infineon Technologies

TVS DIODE 14VWM 28VC TSLP2-17

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 14V (Max)
• Voltage - Breakdown (Min): 8.5V
• Voltage - Clamping (Max) @ Ipp: 28V
• Current - Peak Pulse (10/1000µs): 1A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 4pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: PG-TSLP-2

パッケージ: SOD-882

CHL8203-01CRT

Infineon Technologies

IC REG BUCK 28VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

C505CA4EMCAKXUMA2

Infineon Technologies

IC MCU 32BIT 44MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

T680N14TOFXPSA1

Infineon Technologies

SCR MODULE 1400V 1250A DO200AA

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.4 kV
• Current - On State (It (AV)) (Max): 681 A
• Current - On State (It (RMS)) (Max): 1250 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Clamp On
• Package / Case: DO-200AA, A-PUK

パッケージ: -

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IGW60T120FKSA1

Infineon Technologies

IGBT TRENCH 1200V 100A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
• Power - Max: 375 W
• Switching Energy: 9.5mJ
• Input Type: Standard
• Gate Charge: 280 nC
• Td (on/off) @ 25°C: 50ns/480ns
• Test Condition: 600V, 60A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-1

パッケージ: -

SIGC14T60SNCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 15 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 31ns/261ns
• Test Condition: 400V, 15A, 21Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

パッケージ: -

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CY8C4045FNI-T412T

Infineon Technologies

CONSUMER / IOT MCUS

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, Microwire, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
• Number of I/O: 21
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 25-XFBGA, WLCSP
• Supplier Device Package: 25-WLCSP (1.96x2.05)

パッケージ: -

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S70KL1282GABHM023

Infineon Technologies

IC PSRAM 128MBIT HYPERBUS 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 128Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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CY25482SXI-010

Infineon Technologies

IC SS CLOCK GENERATOR 8SOIC

• Type: Spread Spectrum Clock Generator
• PLL: Yes
• Input: LVCMOS, Crystal
• Output: Clock
• Number of Circuits: 1
• Ratio - Input:Output: 1:3
• Differential - Input:Output: No/No
• Frequency - Max: 166MHz
• Divider/Multiplier: Yes/No
• Voltage - Supply: 2.25V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: -

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2035-200

Infineon Technologies

INTEGRATED CIRCUIT

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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2PS18012E44G40113NOSA1

Infineon Technologies

IGBT MOD 1200V 2560A 5600W

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 2560 A
• Power - Max: 5600 W
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -25°C ~ 60°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

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S6J3429HUBSV20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number of I/O: 144
• Program Memory Size: 832KB (832K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 112K x 8
• RAM Size: 92K x 8
• Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
• Data Converters: A/D 56x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-LQFP
• Supplier Device Package: 144-LQFP (20x20)

パッケージ: -

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S25HS02GTDZBHB050

Infineon Technologies

IC FLASH 2GBIT SPI/QUAD 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 2Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 6 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (8x8)

パッケージ: -

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IPI90R1K2C3XKSA2

Infineon Technologies

MOSFET N-CH 900V 5.1A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 310µA
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

パッケージ: -

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CY8C4025PVA-S412

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 24
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b; D/A 1x7/1x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 28-SSOP

パッケージ: -

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