Infineon Technologies 製品

AUIRGU4045D

Infineon Technologies

DIODE 600V IGBT

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 19.5nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: I-Pak

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

IPP47N10SL26AKSA1

Infineon Technologies

MOSFET N-CH 100V 47A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 175W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

パッケージ: TO-220-3

BTS247Z E3062A

Infineon Technologies

MOSFET N-CH 55V 33A TO220-5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Temperature Sensing Diode
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-220-5
• Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

パッケージ: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

IRFR2405TRRPBF

Infineon Technologies

MOSFET N-CH 55V 56A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 34A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF8721PBF

Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IRFB7446PBF

Infineon Technologies

MOSFET N-CH 40V 120A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3183pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 99W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: TO-220-3

IRFU13N20DPBF

Infineon Technologies

MOSFET N-CH 200V 13A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

IRF6648TRPBF

Infineon Technologies

MOSFET N-CH 60V 86A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.9V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 17A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MN
• Package / Case: DirectFET? Isometric MN

パッケージ: DirectFET? Isometric MN

BSZ018NE2LS

Infineon Technologies

MOSFET N-CH 25V 23A TSDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8-FL
• Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

PTFC260202FCV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: LDMOS (Dual)
• Frequency: 2.69GHz
• Gain: 20dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 170mA
• Power - Output: 5W
• Voltage - Rated: 65V
• Package / Case: H-37248-4
• Supplier Device Package: H-37248-4

パッケージ: H-37248-4

BFP740FH6327XTSA1

Infineon Technologies

TRANS RF NPN 42GHZ 4.7V SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
• Gain: 27.5dB
• Power - Max: 160mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

パッケージ: 4-SMD, Flat Leads

BAT1502LRHE6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 4V 110MA TSLP-2

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (Max): 4V
• Current - Max: 110mA
• Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
• Resistance @ If, F: -
• Power Dissipation (Max): 100mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SOD-882
• Supplier Device Package: PG-TSLP-2

パッケージ: SOD-882

BAL99E6433HTMA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 1µA @ 70V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-236-3, SC-59, SOT-23-3

IDW80C65D1XKSA1

Infineon Technologies

DIODE 650V 80A CC RAPID1 TO247-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 77ns
• Current - Reverse Leakage @ Vr: 40µA @ 650V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

パッケージ: TO-247-3

BAV170E6327HTSA1

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT23

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

IR2113STR

Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 3.3 V ~ 20 V
• Logic Voltage - VIL, VIH: 6V, 9.5V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 25ns, 17ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.295", 7.50mm Width)

ADM8511X-CC-T-1

Infineon Technologies

IC ETHERNET USB NETWORK 100-LQFP

• Protocol: Ethernet
• Function: Controller
• Interface: USB
• Standards: IEEE 802.3, 10/100 Base-T/TX PHY
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: 150mA
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 100-LQFP
• Supplier Device Package: P-LQFP-100

パッケージ: 100-LQFP

XMC1402Q040X0200AAXUMA1

Infineon Technologies

IC MCU 32BIT 200KB FLASH 40VQFN

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 27
• Program Memory Size: 200KB (200K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 12x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

SFH 551/1V-1

Infineon Technologies

MOD PHOTO DETECT RCVR 700NM TTL

• Data Rate: 50Mbps
• Voltage - Supply: 4.75 V ~ 5.25 V
• Power - Minimum Receivable: -22dBm
• Current - Supply: 4mA
• Applications: General Purpose

パッケージ: -

IGC15T65QEX1SA1

Infineon Technologies

IGBT TRENCH FS 650V 30A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 2.32V @ 15V, 30A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

パッケージ: -

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CYPD3176-24LQXQ

Infineon Technologies

CCG3PA

• Protocol: USB
• Function: Controller
• Interface: I2C
• Standards: -
• Voltage - Supply: 3V ~ 24.5V
• Current - Supply: 10mA
• Operating Temperature: -40°C ~ 105°C (TA)
• Package / Case: 24-UFQFN Exposed Pad
• Supplier Device Package: 24-QFN (4x4)

パッケージ: -

CY8C6316BZI-BLF04

Infineon Technologies

IC MCU 32BIT 512KB FLSH 124VFBGA

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit
• Speed: 150MHz
• Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 84
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 124-VFBGA
• Supplier Device Package: 124-VFBGA (9x9)

パッケージ: -

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SIDC53D120H8X1SA1

Infineon Technologies

DIODE GP 1.2KV 100A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 100 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: -

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FS50R12N2T7B15BPSA2

Infineon Technologies

LOW POWER ECONO

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
• Current - Collector Cutoff (Max): 10 µA
• Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

パッケージ: -

CYAT81659-64AA48T

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

パッケージ: -

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CY8C4149LDAS563XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

パッケージ: -

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6ED003L06FXUMA1

Infineon Technologies

6ED003L06 - HALF-BRIDGE BASED MO

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 13V ~ 17.5V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): 165mA, 375mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 620 V
• Rise / Fall Time (Typ): 60ns, 26ns
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-28-17

パッケージ: -

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S80KS5122GABHV020

Infineon Technologies

IC PSRAM 512MBIT HYPERBUS 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 512Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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