Infineon Technologies 製品

BSC882N03MSGATMA1

Infineon Technologies

MOSFET N-CH 34V 22A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 34V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

IPP70N04S307AKSA1

Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

パッケージ: TO-220-3

BSO119N03S

Infineon Technologies

MOSFET N-CH 30V 9A 8DSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta)
• Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

AUIRLS3034-7TRL

Infineon Technologies

MOSFET N-CH 40V 380A D2PAK-7P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

パッケージ: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

IPI120N08S404AKSA1

Infineon Technologies

MOSFET N-CH TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 120µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 179W (Tc)
• Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

IPAW60R380CEXKSA1

Infineon Technologies

MOSFET N-CH 600V TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 320µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 31W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220 Full Pack
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

BSP300H6327XUSA1

Infineon Technologies

MOSFET N-CH 800V 190MA SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 20 Ohm @ 190mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

IPD038N06N3GATMA1

Infineon Technologies

MOSFET N-CH 60V 90A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 188W (Tc)
• Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFI4020H-117P

Infineon Technologies

MOSFET 2N-CH 200V 9.1A TO-220FP

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 9.1A
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id: 4.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
• Power - Max: 21W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack
• Supplier Device Package: TO-220-5 Full-Pak

パッケージ: TO-220-5 Full Pack

BC857BE6433HTMA1

Infineon Technologies

TRANS PNP 45V 0.1A SOT-23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

IRU1117CY

Infineon Technologies

IC REG LIN POS ADJ 800MA SOT223

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 3.6V
• Voltage Dropout (Max): 1.3V @ 1A
• Current - Output: 800mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

IR3476MTR1PBF

Infineon Technologies

IC REG BUCK ADJ 12A SYNC PQFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 27V
• Voltage - Output (Min/Fixed): 0.5V
• Voltage - Output (Max): 12V
• Current - Output: 12A
• Frequency - Switching: Up to 750kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-PowerVQFN
• Supplier Device Package: 16-QFN (5x6)

パッケージ: 16-PowerVQFN

BTS5240LAUMA1

Infineon Technologies

IC SWITCH PWR HISIDE DSO-12

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 5.5A
• Rds On (Typ): 21 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-12-2

パッケージ: 12-BSOP (0.295", 7.50mm Width) Exposed Pad

IR3575MTRPBF

Infineon Technologies

IC REG BUCK SYNC ADJ 60A 32PQFN

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters, Voltage Regulators
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): -
• Current - Output / Channel: 60A
• Current - Peak Output: 90A
• Voltage - Supply: 4.5 V ~ 7 V
• Voltage - Load: 4.5 V ~ 15 V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: Bootstrap Circuit, Diode Emulation, Status Flag
• Fault Protection: Over Temperature, UVLO
• Mounting Type: Surface Mount
• Package / Case: 32-PowerWFQFN
• Supplier Device Package: 32-PQFN (6x6)

パッケージ: 32-PowerWFQFN

PEF 4268 F V1.2

Infineon Technologies

IC SLIC-DC W/DC-DC CONV TQFP-48

• Function: Subscriber Line Interface Concept (SLIC)
• Interface: -
• Number of Circuits: 1
• Voltage - Supply: 4.75 V ~ 5.25 V
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-TQFP
• Supplier Device Package: P-TQFP-48

パッケージ: 48-TQFP

PEF 22504 E V2.1-G

Infineon Technologies

IC LIU E1/T1/J1 160LBGA

• Function: Line Interface Unit (LIU)
• Interface: E1, J1, T1
• Number of Circuits: 4
• Voltage - Supply: 1.8V, 3.3V
• Current - Supply: 230mA
• Power (Watts): 140mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 160-LBGA
• Supplier Device Package: P-LBGA-160

パッケージ: 160-LBGA

XMC4400F100F512ABXQMA1

Infineon Technologies

IC MCU 32BIT 512KB FLASH 100LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: CAN, Ethernet, I2C, LIN, SPI, UART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 55
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 80K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 24x12b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-11

パッケージ: 100-LQFP Exposed Pad

S29GL01GS11DHB023

Infineon Technologies

PNOR

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: CFI
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 110 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (9x9)

パッケージ: -

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S6J325CLUPSC20000

Infineon Technologies

TRAVEO-55NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
• Number of I/O: 128
• Program Memory Size: 2.0625MB (2.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 2.25K x 8
• Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
• Data Converters: A/D 50x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 216-LQFP Exposed Pad
• Supplier Device Package: 216-TEQFP (24x24)

パッケージ: -

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SPC5671LAVVZ1R

Infineon Technologies

SPC5671LAVVZ1R - LYRE

• Type: -
• Applications: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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FS35R12KE3GBOSA1

Infineon Technologies

IGBT MOD 1200V 55A 200W

• IGBT Type: -
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 55 A
• Power - Max: 200 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

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TLD5191ESXUMA1

Infineon Technologies

SYNCHRONOUS MOSFET H-BRIDGE DC-D

• Type: DC DC Controller
• Topology: Step-Down (Buck), Step-Up (Boost)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 4.5V
• Voltage - Supply (Max): 40V
• Voltage - Output: 55V
• Current - Output / Channel: -
• Frequency: 200kHz ~ 700kHz
• Dimming: Analog, PWM
• Applications: Lighting
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-24

パッケージ: -

IPQC60T017S7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

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IR3887MTRPBFAUMA1

Infineon Technologies

IC REG BUCK ADJ 30A 29QFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2V
• Voltage - Input (Max): 17V
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): 2V
• Current - Output: 30A
• Frequency - Switching: 600kHz ~ 2MHz
• Synchronous Rectifier: No
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 29-PowerVFQFN
• Supplier Device Package: PG-IQFN-29-1

パッケージ: -

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IAUZ30N06S5L140ATMA1

Infineon Technologies

MOSFET N-CH 60V 30A TSDSON-8-32

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.2V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8-32
• Package / Case: 8-PowerTDFN

パッケージ: -

IPP65R050CFD7AAKSA1

Infineon Technologies

MOSFET N-CH 650V 45A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
• Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 227W (Tc)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

パッケージ: -

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ISC750P10LMATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 27.3A
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-7
• Package / Case: 8-PowerTDFN

パッケージ: -

CY8C4147AZE-S255

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64TQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

パッケージ: -

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