Infineon Technologies 製品

IRGS4607DTRRPBF

Infineon Technologies

IGBT 600V 11A 58W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11A
• Current - Collector Pulsed (Icm): 12A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
• Power - Max: 58W
• Switching Energy: 140µJ (on), 62µJ (off)
• Input Type: Standard
• Gate Charge: 9nC
• Td (on/off) @ 25°C: 27ns/120ns
• Test Condition: 400V, 4A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 48ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRGP66524D0

Infineon Technologies

IGBT 600V 60A 214W TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 72A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
• Power - Max: 214W
• Switching Energy: 915µJ (on), 280µJ (off)
• Input Type: Standard
• Gate Charge: 80nC
• Td (on/off) @ 25°C: 30ns/75ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 176ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

パッケージ: TO-247-3

IRF7202TR

Infineon Technologies

MOSFET P-CH 20V 2.5A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

AUIRFU4104

Infineon Technologies

MOSFET N-CH 40V 42A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

BSZ520N15NS3 G

Infineon Technologies

MOSFET N-CH 150V 21A 8-TSDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4V @ 35µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 75V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 52 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

PTFA192001F V4 R250

Infineon Technologies

IC FET RF LDMOS 200W H-37260-2

• Transistor Type: LDMOS
• Frequency: 1.99GHz
• Gain: 15.9dB
• Voltage - Test: 30V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 1.8A
• Power - Output: 50W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37260-2

パッケージ: 2-Flatpack, Fin Leads, Flanged

IRF7303TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 4.9A 8-SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.9A
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

BCW 66H B6327

Infineon Technologies

TRANS NPN 45V 0.8A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 170MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

IRD3CH53DF6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

パッケージ: -

BAS 4002A RPP E6327

Infineon Technologies

DIODE BRIDGE 40V 200MA SOT 143

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 40V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 400mV @ 100mA
• Current - Reverse Leakage @ Vr: 10µA @ 40V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: PG-SOT143-4

パッケージ: TO-253-4, TO-253AA

TLE42062GXUMA2

Infineon Technologies

IC MOTOR DRIVER PAR 14SOIC

• Motor Type - Stepper: -
• Motor Type - AC, DC: Servo DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: Bipolar
• Step Resolution: -
• Applications: Automotive
• Current - Output: 800mA
• Voltage - Supply: 8 V ~ 18 V
• Voltage - Load: 8 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

98-0521PBF

Infineon Technologies

IC REG LED BUCK 200V 8SOIC

• Type: -
• Topology: -
• Internal Switch(s): -
• Number of Outputs: -
• Voltage - Supply (Min): -
• Voltage - Supply (Max): -
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

IR2113-2

Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16-DIP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 3.3 V ~ 20 V
• Logic Voltage - VIL, VIH: 6V, 9.5V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 25ns, 17ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm), 12 Leads
• Supplier Device Package: 14-PDIP

パッケージ: 14-DIP (0.300", 7.62mm), 12 Leads

XC167CI32F40FBBAKXQMA1

Infineon Technologies

IC MCU 16BIT 256KB FLASH 144TQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: CAN, EBI/EMI, I2C, SPI, UART/USART
• Peripherals: PWM, WDT
• Number of I/O: 103
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 12K x 8
• Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
• Data Converters: A/D 16x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

V23818-N15-L353

Infineon Technologies

TXRX SINGLE MODE 2.5GBD 1300NM

• Data Rate: 2.5Gbps
• Wavelength: 1300nm
• Applications: Ethernet
• Voltage - Supply: 3.14 V ~ 3.46 V
• Connector Type: LC Duplex
• Mounting Type: Through Hole

パッケージ: -

ISP752TFUMA1

Infineon Technologies

IC SWITCH HISIDE SMART 8DSO

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 52 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.3A
• Rds On (Typ): 150 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -30°C ~ 85°C (TA)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

パッケージ: 8-SOIC (0.154", 3.90mm Width)

S99-50593

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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S29GL128S10GHB013

Infineon Technologies

PNOR

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 128Mbit
• Memory Interface: CFI
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 100 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-VFBGA
• Supplier Device Package: 56-FBGA (9x7)

パッケージ: -

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FD600R17KF6CB2NOSA1

Infineon Technologies

FD600R17KF6C - IGBT MODULE

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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TC334LP32F200FAAKXUMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 144TQFP

• Core Processor: TriCore™
• Core Size: 32-Bit Single-Core
• Speed: 200MHz
• Connectivity: DMA, I2S, PWM, WDT
• Peripherals: DMA, I2S, PWM, WDT
• Number of I/O: -
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 248K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: PG-TQFP-144-27

パッケージ: -

IMYH200R075M1HXKSA1

Infineon Technologies

SIC DISCRETE

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 2000 V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
• Vgs(th) (Max) @ Id: 5.5V @ 7.7mA
• Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): +20V, -7V
• FET Feature: -
• Power Dissipation (Max): 267W (Tc)
• Rds On (Max) @ Id, Vgs: 98mOhm @ 13A, 18V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4-U04
• Package / Case: TO-247-4

パッケージ: -

1ED44173N01BXTSA1

Infineon Technologies

IC GATE DRVR LOW-SIDE SOT23-6

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 8.6V ~ 20V
• Logic Voltage - VIL, VIH: 1.2V, 1.9V
• Current - Peak Output (Source, Sink): 2.6A, 2.6A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 5ns, 5ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: PG-SOT23-6-3

パッケージ: -

ICE5BR4780BZXKLA1

Infineon Technologies

COOLSET (INCL. GEN5) PG-DIP-7

• Output Isolation: Non-Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 800V
• Topology: Buck, Flyback
• Voltage - Start Up: 16 V
• Voltage - Supply (Vcc/Vdd): 10V ~ 27V
• Duty Cycle: 75%
• Frequency - Switching: 65kHz
• Power (Watts): 27.5 W
• Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
• Control Features: Soft Start
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7
• Mounting Type: Through Hole

パッケージ: -

BSC0303LSATMA1

Infineon Technologies

TRENCH >=100V PG-TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 72µA
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 60 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

パッケージ: -

DD560N45KHPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: -
• Number of SCRs, Diodes: -
• Voltage - Off State: -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -

パッケージ: -

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BTS7741G

Infineon Technologies

IC HALF BRIDGE DRIVER 7A PDSO28

• Output Configuration: Half Bridge (2)
• Applications: DC Motors, General Purpose
• Interface: -
• Load Type: Inductive
• Technology: DMOS
• Rds On (Typ): 100mOhm LS, 110mOhm HS
• Current - Output / Channel: 7A
• Current - Peak Output: 10A
• Voltage - Supply: 1.8V ~ 42V
• Voltage - Load: 1.8V ~ 42V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Slew Rate Controlled, Status Flag
• Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-28

パッケージ: -

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FZ1200R33KF2CNOSA1

Infineon Technologies

IGBT MODULE 3300V 2000A

• IGBT Type: -
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 3300 V
• Current - Collector (Ic) (Max): 2000 A
• Power - Max: 14500 W
• Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 1200A
• Current - Collector Cutoff (Max): 12 mA
• Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

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S70KS1282GABHI020

Infineon Technologies

IC PSRAM 128MBIT PARALLEL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 128Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: PG-BGA-24-801

パッケージ: -