ページ 5 - ISSI, Integrated Silicon Solution Inc 製品 - メモリ

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS43TR16256ECL-125LB2LI-TR	ISSI, Integrated Silicon Solution Inc	4G, 1.35V, DDR3L w/ ECC,256Mx16, Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 96-BGA Supplier Device Package: 96-BGA	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	800 MHz	-	-	-	-40°C ~ 85°C	Surface Mount	96-BGA	96-BGA
IS43TR85120BL-107MBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PAR 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
IS25LX256-JHLA3-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 256MBIT SPI/OCT 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 256Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	パッケージ: -	Request a Quote	FLASH	FLASH	256Mbit	SPI - Octal I/O	133 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS46TR16640CL-125JBLA25	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 115°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3L	1Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 115°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS46TR85120AL-125KBLA1-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PARALLEL 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (9x10.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (9x10.5)
IS25LP010E-JYLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 1MBIT SPI/QUAD 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 1.2ms Access Time: 8 ns Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	パッケージ: -	Request a Quote	FLASH	FLASH - NOR	1Mbit	SPI - Quad I/O, QPI, DTR	104 MHz	1.2ms	8 ns	2.3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (2x3)
IS49NLC96400A-25EWBLI	ISSI, Integrated Silicon Solution Inc	RLDRAM2 Memory, 576Mbit, x9, Com Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 2 Memory Size: 576Mbit Memory Interface: HSTL Clock Frequency: 400 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-TWBGA (11x18.5)	パッケージ: -	Request a Quote	DRAM	RLDRAM 2	576Mbit	HSTL	400 MHz	-	15 ns	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount	144-TFBGA	144-TWBGA (11x18.5)
IS43TR16640CL-125JBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: -	在庫2,829	DRAM	SDRAM - DDR3L	1Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 85°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS43TR81024B-107MBLI	ISSI, Integrated Silicon Solution Inc	8G, 1.5V, DDR3, 1Gx8, 1866MT/s @ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (10x14)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3	8Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (10x14)
IS43LQ32256B-062BLI	ISSI, Integrated Silicon Solution Inc	8G, 1.06-1.17/1.70-1.95V, LPDDR4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-VFBGA (10x14.5)	パッケージ: -	在庫300	DRAM	SDRAM - Mobile LPDDR4	8Gbit	LVSTL	1.6 GHz	-	-	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-VFBGA	200-VFBGA (10x14.5)
IS62WV2568FBLL-45BLI	ISSI, Integrated Silicon Solution Inc	2Mb, Low Power/Power Saver,Async Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-TFBGA Supplier Device Package: 36-TFBGA (6x8)	パッケージ: -	Request a Quote	SRAM	SRAM - Asynchronous	2Mbit	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	36-TFBGA	36-TFBGA (6x8)
IS43TR16256B-093NBLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PAR 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 1.066 GHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3	4Gbit	Parallel	1.066 GHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS25WX128-JHLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 128MBIT SPI/OCT 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 128Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	パッケージ: -	在庫657	FLASH	FLASH	128Mbit	SPI - Octal I/O	200 MHz	-	-	1.7V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS42S32200N-7TL	ISSI, Integrated Silicon Solution Inc	IC DRAM 64MBIT PAR 86TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	パッケージ: -	Request a Quote	DRAM	SDRAM	64Mbit	LVTTL	143 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
IS42S32200N-7BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 64MBIT PAR 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: -	Request a Quote	DRAM	SDRAM	64Mbit	LVTTL	143 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS43QR81024A-083TBLI-TR	ISSI, Integrated Silicon Solution Inc	8G, 1.2V, DDR4, 1Mx8, 2400MT/s @ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 1.2 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (10x14)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	Parallel	1.2 GHz	15ns	18 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (10x14)
IS42S32200N-6TL	ISSI, Integrated Silicon Solution Inc	IC DRAM 64MBIT PAR 86TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	パッケージ: -	Request a Quote	DRAM	SDRAM	64Mbit	LVTTL	166 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
IS42S32200N-6BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 64MBIT PARALLEL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: -	Request a Quote	DRAM	SDRAM	64Mbit	LVTTL	166 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS43LR32800H-6BLI	ISSI, Integrated Silicon Solution Inc	256M, 1.8V, Mobile DDR, 8Mx32, 1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mbit Memory Interface: LVCMOS Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR	256Mbit	LVCMOS	166 MHz	15ns	5.5 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42S32200N-5TL	ISSI, Integrated Silicon Solution Inc	IC DRAM 64MBIT PAR 86TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mbit Memory Interface: LVTTL Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 4.8 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	パッケージ: -	Request a Quote	DRAM	SDRAM	64Mbit	LVTTL	200 MHz	-	4.8 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
IS65WV25616EBLL-55CTLA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT PARALLEL 44TSOP II Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	パッケージ: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	55ns	55 ns	2.2V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS43LQ32640A-062TBLI	ISSI, Integrated Silicon Solution Inc	2G, 0.57-0.65V/1.06-1.17/1.70-1. Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	2Gbit	LVSTL	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
IS46LQ32640AL-062TBLA1-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 2G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	2Gbit	LVSTL	1.6 GHz	18ns	3.5 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
IS43TR81024BL-107MBLI	ISSI, Integrated Silicon Solution Inc	8G, 1.35V, DDR3L, 1Gx8, 1866MT/s Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (10x14)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3L	8Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (10x14)
IS46QR16256B-083RBLA1-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 4G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gbit Memory Interface: POD Clock Frequency: 1.2 GHz Write Cycle Time - Word, Page: 15ns Access Time: 19 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (7.5x13.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR4	4Gbit	POD	1.2 GHz	15ns	19 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (7.5x13.5)
IS29GL256-70DLET	ISSI, Integrated Silicon Solution Inc	IC FLASH 256MBIT PAR 64LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200µs Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LFBGA (9x9)	パッケージ: -	在庫123	FLASH	FLASH - NOR	256Mbit	Parallel	-	200µs	70 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-LFBGA (9x9)
IS29GL256-70DLEB	ISSI, Integrated Silicon Solution Inc	IC FLASH 256MBIT PAR 64LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200µs Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LFBGA (9x9)	パッケージ: -	在庫642	FLASH	FLASH - NOR	256Mbit	Parallel	-	200µs	70 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-LFBGA (9x9)
IS62WV2568FBLL-45HLI	ISSI, Integrated Silicon Solution Inc	2Mb, Low Power/Power Saver,Async Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-sTSOP I	パッケージ: -	Request a Quote	SRAM	SRAM - Asynchronous	2Mbit	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.465", 11.80mm Width)	32-sTSOP I

IS43TR16256ECL-125LB2LI-TR

ISSI, Integrated Silicon Solution Inc

4G, 1.35V, DDR3L w/ ECC,256Mx16,

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 96-BGA
Supplier Device Package: 96-BGA

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR3L

4Gbit

Parallel

800 MHz

-

-40°C ~ 85°C

Surface Mount

96-BGA

IS43TR85120BL-107MBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR3L

4Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

IS25LX256-JHLA3-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 256MBIT SPI/OCT 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

パッケージ: -

Request a Quote

FLASH

256Mbit

SPI - Octal I/O

133 MHz

-

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS46TR16640CL-125JBLA25

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 115°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR3L

1Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 115°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS46TR85120AL-125KBLA1-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PARALLEL 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (9x10.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR3L

4Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (9x10.5)

IS25LP010E-JYLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 1MBIT SPI/QUAD 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 1.2ms
Access Time: 8 ns
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

パッケージ: -

Request a Quote

FLASH

FLASH - NOR

1Mbit

SPI - Quad I/O, QPI, DTR

104 MHz

1.2ms

8 ns

2.3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (2x3)

IS49NLC96400A-25EWBLI

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 576Mbit, x9, Com

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 2
Memory Size: 576Mbit
Memory Interface: HSTL
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-TWBGA (11x18.5)

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DRAM

RLDRAM 2

576Mbit

HSTL

400 MHz

-

15 ns

1.7V ~ 1.9V

-40°C ~ 85°C (TA)

Surface Mount

144-TFBGA

144-TWBGA (11x18.5)

IS43TR16640CL-125JBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: -

在庫2,829

DRAM

SDRAM - DDR3L

1Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 85°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS43TR81024B-107MBLI

ISSI, Integrated Silicon Solution Inc

8G, 1.5V, DDR3, 1Gx8, 1866MT/s @

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (10x14)

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DRAM

SDRAM - DDR3

8Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (10x14)

IS43LQ32256B-062BLI

ISSI, Integrated Silicon Solution Inc

8G, 1.06-1.17/1.70-1.95V, LPDDR4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-VFBGA (10x14.5)

パッケージ: -

在庫300

DRAM

SDRAM - Mobile LPDDR4

8Gbit

LVSTL

1.6 GHz

-

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-VFBGA

200-VFBGA (10x14.5)

IS62WV2568FBLL-45BLI

ISSI, Integrated Silicon Solution Inc

2Mb, Low Power/Power Saver,Async

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Supplier Device Package: 36-TFBGA (6x8)

パッケージ: -

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SRAM

SRAM - Asynchronous

2Mbit

Parallel

-

45ns

45 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

36-TFBGA

36-TFBGA (6x8)

IS43TR16256B-093NBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 1.066 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

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DRAM

SDRAM - DDR3

4Gbit

Parallel

1.066 GHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS25WX128-JHLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/OCT 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 128Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

パッケージ: -

在庫657

FLASH

128Mbit

SPI - Octal I/O

200 MHz

-

1.7V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS42S32200N-7TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 86TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

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DRAM

SDRAM

64Mbit

LVTTL

143 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

IS42S32200N-7BL

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: -

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DRAM

SDRAM

64Mbit

LVTTL

143 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS43QR81024A-083TBLI-TR

ISSI, Integrated Silicon Solution Inc

8G, 1.2V, DDR4, 1Mx8, 2400MT/s @

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 1.2 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (10x14)

パッケージ: -

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DRAM

SDRAM - DDR4

8Gbit

Parallel

1.2 GHz

15ns

18 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (10x14)

IS42S32200N-6TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 86TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

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DRAM

SDRAM

64Mbit

LVTTL

166 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

IS42S32200N-6BL

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: -

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DRAM

SDRAM

64Mbit

LVTTL

166 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS43LR32800H-6BLI

ISSI, Integrated Silicon Solution Inc

256M, 1.8V, Mobile DDR, 8Mx32, 1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mbit
Memory Interface: LVCMOS
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR

256Mbit

LVCMOS

166 MHz

15ns

5.5 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42S32200N-5TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 86TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mbit
Memory Interface: LVTTL
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 4.8 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

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DRAM

SDRAM

64Mbit

LVTTL

200 MHz

-

4.8 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

IS65WV25616EBLL-55CTLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 44TSOP II

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

パッケージ: -

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SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

55ns

55 ns

2.2V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS43LQ32640A-062TBLI

ISSI, Integrated Silicon Solution Inc

2G, 0.57-0.65V/1.06-1.17/1.70-1.

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR4

2Gbit

LVSTL

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

IS46LQ32640AL-062TBLA1-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 2G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR4X

2Gbit

LVSTL

1.6 GHz

18ns

3.5 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

IS43TR81024BL-107MBLI

ISSI, Integrated Silicon Solution Inc

8G, 1.35V, DDR3L, 1Gx8, 1866MT/s

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (10x14)

パッケージ: -

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DRAM

SDRAM - DDR3L

8Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (10x14)

IS46QR16256B-083RBLA1-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 4G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gbit
Memory Interface: POD
Clock Frequency: 1.2 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (7.5x13.5)

パッケージ: -

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DRAM

SDRAM - DDR4

4Gbit

POD

1.2 GHz

15ns

19 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (7.5x13.5)

IS29GL256-70DLET

ISSI, Integrated Silicon Solution Inc

IC FLASH 256MBIT PAR 64LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200µs
Access Time: 70 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LFBGA (9x9)

パッケージ: -

在庫123

FLASH

FLASH - NOR

256Mbit

Parallel

-

200µs

70 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-LFBGA (9x9)

IS29GL256-70DLEB

ISSI, Integrated Silicon Solution Inc

IC FLASH 256MBIT PAR 64LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200µs
Access Time: 70 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LFBGA (9x9)

パッケージ: -

在庫642

FLASH

FLASH - NOR

256Mbit

Parallel

-

200µs

70 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-LFBGA (9x9)

IS62WV2568FBLL-45HLI

ISSI, Integrated Silicon Solution Inc

2Mb, Low Power/Power Saver,Async

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP I

パッケージ: -

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SRAM

SRAM - Asynchronous

2Mbit

Parallel

-

45ns

45 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.465", 11.80mm Width)

32-sTSOP I