ページ 95 - ISSI, Integrated Silicon Solution Inc 製品

部品番号	メーカ	説明	パッケージ	在庫
IS42RM32400G-75BI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫6,144
IS61WV102416ALL-20MI	ISSI, Integrated Silicon Solution Inc	IC SRAM 16MBIT 20NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (9x11)	パッケージ: 48-TFBGA	在庫2,656
IS45S16100E-7BLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 143MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (6.4x10.1)	パッケージ: 60-TFBGA	在庫2,064
IS42S16100F-6TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 166MHZ 50TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 50-TSOP (0.400", 10.16mm Width) Supplier Device Package: 50-TSOP II	パッケージ: 50-TSOP (0.400", 10.16mm Width)	在庫7,936
IS42S16800E-75ETL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫4,144
IS63LV1024L-10T	ISSI, Integrated Silicon Solution Inc	IC SRAM 1MBIT 10NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.400", 10.16mm Width) Supplier Device Package: 32-TSOP II	パッケージ: 32-SOIC (0.400", 10.16mm Width)	在庫17,400
IS42S32400D-6T	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	パッケージ: 86-TFSOP (0.400", 10.16mm Width)	在庫7,776
IS45S16320D-7CTLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	パッケージ: 54-TSOP (0.400", 10.16mm Width)	在庫5,488
IS42S32160F-6TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 167MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	パッケージ: 86-TFSOP (0.400", 10.16mm Width)	在庫5,760
IS43TR16256AL-15HBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 4GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫17,472
IS43TR16128AL-15HBL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫5,920
IS46R16320D-6TLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 167MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	パッケージ: 66-TSSOP (0.400", 10.16mm Width)	在庫4,352
IS61WV25616EDBLL-8BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 8NS 48TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 8ns Access Time: 8ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	パッケージ: 48-TFBGA	在庫4,432
IS43R86400D-6TL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 167MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	パッケージ: 66-TSSOP (0.400", 10.16mm Width)	在庫4,800
IS42S32400F-6BI	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: 90-TFBGA	在庫7,344
IS42S16800F-7BI	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 143MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	パッケージ: 54-TFBGA	在庫2,688
IS46DR81280C-3DBLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	パッケージ: 60-TFBGA	在庫6,576
IS43TR16128DL-125KBL	ISSI, Integrated Silicon Solution Inc	2G 1.5V DDR3 128MX16 1600MT 96 B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: 96-TFBGA	在庫7,416
IS43TR16256B-093NBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT PAR 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 1.066 GHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: -	Request a Quote
IS21EF16G-JCLI	ISSI, Integrated Silicon Solution Inc	16GB, 153 BALL FBGA, 3.3V, ROHS Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 128Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	パッケージ: -	Request a Quote
IS46LQ16128A-062BLA1-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 2G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-VFBGA (10x14.5)	パッケージ: -	Request a Quote
IS49NLC96400A-18WBLI	ISSI, Integrated Silicon Solution Inc	RLDRAM2 Memory, 576Mbit, x9, Com Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 2 Memory Size: 576Mbit Memory Interface: HSTL Clock Frequency: 533 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-TWBGA (11x18.5)	パッケージ: -	Request a Quote
IS43TR16128D-125KBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	パッケージ: -	Request a Quote
IS46LQ16128AL-062TBLA2-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +105C), 2 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	パッケージ: -	Request a Quote
IS42S32400J-7BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128MBIT PAR 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	パッケージ: -	Request a Quote
IS61WV102416FALL-20BLI-TR	ISSI, Integrated Silicon Solution Inc	16Mb,High-Speed,Async,1Mbx16, 20 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 1.65V ~ 2.2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	パッケージ: -	Request a Quote
IS62WV2568FBLL-45BLI	ISSI, Integrated Silicon Solution Inc	2Mb, Low Power/Power Saver,Async Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-TFBGA Supplier Device Package: 36-TFBGA (6x8)	パッケージ: -	Request a Quote
IS43LQ32640A-062TBLI	ISSI, Integrated Silicon Solution Inc	2G, 0.57-0.65V/1.06-1.17/1.70-1. Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 2Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	パッケージ: -	Request a Quote

IS42RM32400G-75BI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫6,144

IS61WV102416ALL-20MI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 20NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (9x11)

パッケージ: 48-TFBGA

在庫2,656

IS45S16100E-7BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (6.4x10.1)

パッケージ: 60-TFBGA

在庫2,064

IS42S16100F-6TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 166MHZ 50TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II

パッケージ: 50-TSOP (0.400", 10.16mm Width)

在庫7,936

IS42S16800E-75ETL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫4,144

IS63LV1024L-10T

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 10NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II

パッケージ: 32-SOIC (0.400", 10.16mm Width)

在庫17,400

IS42S32400D-6T

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

パッケージ: 86-TFSOP (0.400", 10.16mm Width)

在庫7,776

IS45S16320D-7CTLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

パッケージ: 54-TSOP (0.400", 10.16mm Width)

在庫5,488

IS42S32160F-6TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

パッケージ: 86-TFSOP (0.400", 10.16mm Width)

在庫5,760

IS43TR16256AL-15HBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫17,472

IS43TR16128AL-15HBL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫5,920

IS46R16320D-6TLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

パッケージ: 66-TSSOP (0.400", 10.16mm Width)

在庫4,352

IS61WV25616EDBLL-8BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 8NS 48TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 8ns
Access Time: 8ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

パッケージ: 48-TFBGA

在庫4,432

IS43R86400D-6TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

パッケージ: 66-TSSOP (0.400", 10.16mm Width)

在庫4,800

IS42S32400F-6BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: 90-TFBGA

在庫7,344

IS42S16800F-7BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 128M PARALLEL 143MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

パッケージ: 54-TFBGA

在庫2,688

IS46DR81280C-3DBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

パッケージ: 60-TFBGA

在庫6,576

IS43TR16128DL-125KBL

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: 96-TFBGA

在庫7,416

IS43TR16256B-093NBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 1.066 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: -

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IS21EF16G-JCLI

ISSI, Integrated Silicon Solution Inc

16GB, 153 BALL FBGA, 3.3V, ROHS

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 128Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

パッケージ: -

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IS46LQ16128A-062BLA1-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 2G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-VFBGA (10x14.5)

パッケージ: -

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IS49NLC96400A-18WBLI

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 576Mbit, x9, Com

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 2
Memory Size: 576Mbit
Memory Interface: HSTL
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-TWBGA (11x18.5)

パッケージ: -

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IS43TR16128D-125KBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

パッケージ: -

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IS46LQ16128AL-062TBLA2-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 2

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

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IS42S32400J-7BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

パッケージ: -

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IS61WV102416FALL-20BLI-TR

ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,1Mbx16, 20

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 1.65V ~ 2.2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

パッケージ: -

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IS62WV2568FBLL-45BLI

ISSI, Integrated Silicon Solution Inc

2Mb, Low Power/Power Saver,Async

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Supplier Device Package: 36-TFBGA (6x8)

パッケージ: -

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IS43LQ32640A-062TBLI

ISSI, Integrated Silicon Solution Inc

2G, 0.57-0.65V/1.06-1.17/1.70-1.

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 2Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

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