IXYS Integrated Circuits Division 製品 - トランジスタ - FET、MOSFET - シングル

CPC3730C

IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 35 Ohm @ 140mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫6,832

MOSFET (Metal Oxide)

350V

-

0V

-

200pF @ 25V

±20V

Depletion Mode

1.6W (Ta)

35 Ohm @ 140mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-89

TO-243AA

CPC3720C

IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 22 Ohm @ 130mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫2,784

MOSFET (Metal Oxide)

350V

-

0V

-

350pF @ 25V

±15V

Depletion Mode

1.4W (Ta)

22 Ohm @ 130mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-89

TO-243AA

CPC3714C

IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 14 Ohm @ 240mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫7,168

MOSFET (Metal Oxide)

350V

-

0V

-

100pF @ 25V

±15V

Depletion Mode

1.4W (Ta)

14 Ohm @ 240mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-89

TO-243AA

CPC3710C

IXYS Integrated Circuits Division

MOSFET N-CH 250V SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 10 Ohm @ 220mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫6,176

MOSFET (Metal Oxide)

250V

-

0V

-

350pF @ 25V

±15V

Depletion Mode

1.4W (Ta)

10 Ohm @ 220mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-89

TO-243AA

CPC3701C

IXYS Integrated Circuits Division

MOSFET N-CH 60V SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫4,144

MOSFET (Metal Oxide)

60V

-

0V

-

±15V

Depletion Mode

1.1W (Ta)

1 Ohm @ 300mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-89

TO-243AA

CPC3703C

IXYS Integrated Circuits Division

MOSFET N-CH 250V 360MA SOT-89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89-3
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫2,112

MOSFET (Metal Oxide)

250V

360mA (Ta)

0V

-

350pF @ 25V

±15V

Depletion Mode

1.6W (Ta)

4 Ohm @ 200mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-89-3

TO-243AA

CPC3703ZTR

IXYS Integrated Circuits Division

MOSFET N-CH 250V SOT-89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫5,152

MOSFET (Metal Oxide)

250V

-

0V

-

350pF @ 25V

±15V

Depletion Mode

1.1W (Ta)

4 Ohm @ 200mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-89

TO-243AA

CPC3708ZTR

IXYS Integrated Circuits Division

MOSFET N-CH 350V 0.005A SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350V
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -0.35V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
Operating Temperature: -40°C ~ 110°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

在庫5,120

MOSFET (Metal Oxide)

350V

5mA (Ta)

-0.35V

-

300pF @ 0V

±20V

Depletion Mode

2.5W (Ta)

14 Ohm @ 50mA, 350mV

-40°C ~ 110°C (TA)

Surface Mount

SOT-223

TO-261-4, TO-261AA

CPC3708CTR

IXYS Integrated Circuits Division

MOSFET N-CH 350V 0.005A SOT-89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350V
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -0.35V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
Operating Temperature: -40°C ~ 110°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫2,160

MOSFET (Metal Oxide)

350V

5mA (Ta)

-0.35V

-

300pF @ 0V

±20V

Depletion Mode

1.1W (Ta)

14 Ohm @ 50mA, 350mV

-40°C ~ 110°C (TA)

Surface Mount

SOT-89

TO-243AA

CPC3902CTR

IXYS Integrated Circuits Division

MOSFET N-CH 250V TO-243AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 300mA, 0V
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫2,288

MOSFET (Metal Oxide)

250V

-

0V

-

230pF @ 20V

±15V

Depletion Mode

1.8W (Ta)

2.5 Ohm @ 300mA, 0V

125°C (TJ)

Surface Mount

SOT-89

TO-243AA

CPC3701CTR

IXYS Integrated Circuits Division

MOSFET N-CH 60V SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫4,160

MOSFET (Metal Oxide)

60V

-

0V

-

±15V

Depletion Mode

1.1W (Ta)

1 Ohm @ 300mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-89

TO-243AA

CPC3710CTR

IXYS Integrated Circuits Division

MOSFET N-CH 250V SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 10 Ohm @ 220mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫6,304

MOSFET (Metal Oxide)

250V

-

0V

-

350pF @ 25V

±15V

Depletion Mode

1.4W (Ta)

10 Ohm @ 220mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-89

TO-243AA

CPC3909ZTR

IXYS Integrated Circuits Division

MOSFET N-CH 400V SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): 15V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V
Operating Temperature: -40°C ~ 110°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

在庫4,576

MOSFET (Metal Oxide)

400V

300mA (Ta)

0V

-

15V

Depletion Mode

2.5W (Ta)

9 Ohm @ 300mA, 0V

-40°C ~ 110°C (TA)

Surface Mount

SOT-223

TO-261-4, TO-261AA

CPC3909CTR

IXYS Integrated Circuits Division

MOSFET N-CH 400V SOT-89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): 15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V
Operating Temperature: -40°C ~ 110°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫3,536

MOSFET (Metal Oxide)

400V

300mA (Ta)

0V

-

15V

Depletion Mode

1.1W (Ta)

9 Ohm @ 300mA, 0V

-40°C ~ 110°C (TA)

Surface Mount

SOT-89

TO-243AA

CPC3902ZTR

IXYS Integrated Circuits Division

MOSFET N-CH 250V SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 300mA, 0V
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

在庫2,464

MOSFET (Metal Oxide)

250V

-

0V

-

230pF @ 20V

±15V

Depletion Mode

1.8W (Tc)

2.5 Ohm @ 300mA, 0V

125°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

CPC3960ZTR

IXYS Integrated Circuits Division

MOSFET N-CH 600V SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 44 Ohm @ 100mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

在庫22,704

MOSFET (Metal Oxide)

600V

-

0V

-

100pF @ 25V

±15V

Depletion Mode

1.8W (Ta)

44 Ohm @ 100mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

CPC3982TTR

IXYS Integrated Circuits Division

MOSFET N-CH 800V SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 380 Ohm @ 20mA, 0V
Operating Temperature: -55°C ~ 110°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫6,624

MOSFET (Metal Oxide)

800V

-

0V

-

20pF @ 25V

±15V

Depletion Mode

400mW (Ta)

380 Ohm @ 20mA, 0V

-55°C ~ 110°C (TA)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

CPC5603CTR

IXYS Integrated Circuits Division

MOSFET N-CH 415V 5MA SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 415V
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -0.35V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

在庫15,606

MOSFET (Metal Oxide)

415V

5mA (Ta)

-0.35V

-

300pF @ 0V

±20V

Depletion Mode

2.5W (Ta)

14 Ohm @ 50mA, 350mV

-40°C ~ 85°C (TA)

Surface Mount

SOT-223

TO-261-4, TO-261AA

CPC3980ZTR

IXYS Integrated Circuits Division

MOSFET N-CH 800V SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 25V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 45 Ohm @ 100mA, 0V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

在庫101,886

MOSFET (Metal Oxide)

800V

-

0V

-

115pF @ 25V

±15V

Depletion Mode

1.8W (Ta)

45 Ohm @ 100mA, 0V

-55°C ~ 125°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

CPC5602CTR

IXYS Integrated Circuits Division

MOSFET N-CH 350V 5MA SOT-223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350V
Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -0.35V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

在庫506,640

MOSFET (Metal Oxide)

350V

5mA (Ta)

-0.35V

-

300pF @ 0V

±20V

Depletion Mode

2.5W (Ta)

14 Ohm @ 50mA, 350mV

-40°C ~ 85°C (TA)

Surface Mount

SOT-223

TO-261-4, TO-261AA

CPC3703CTR

IXYS Integrated Circuits Division

MOSFET N-CH 250V 360MA SOT-89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89-3
Package / Case: TO-243AA

パッケージ: TO-243AA

在庫350,388

MOSFET (Metal Oxide)

250V

360mA (Ta)

0V

-

350pF @ 25V

±15V

Depletion Mode

1.1W (Ta)

4 Ohm @ 200mA, 0V

-55°C ~ 125°C (TA)

Surface Mount

SOT-89-3

TO-243AA

CPC3730CTR

IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350 V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Vgs (Max): -
FET Feature: Depletion Mode
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 35Ohm @ 140mA, 0V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: -

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MOSFET (Metal Oxide)

350 V

140mA (Ta)

-

200 pF @ 25 V

-

Depletion Mode

-

35Ohm @ 140mA, 0V

-

Surface Mount

SOT-89

TO-243AA

CPC3714CTR

IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Vgs (Max): -
FET Feature: Depletion Mode
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 14Ohm @ 240mA, 0V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

350 V

-

100 pF @ 25 V

-

Depletion Mode

-

14Ohm @ 240mA, 0V

-

Surface Mount

SOT-89

TO-243AA

CPC3981ZTR

IXYS Integrated Circuits Division

MOSFET N-CH DEP 800V 45OH SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 3.1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 25 V
Vgs (Max): ±15V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.25W (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 100mA, 0V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223-2L
Package / Case: TO-261-3

パッケージ: -

在庫8,685

MOSFET (Metal Oxide)

800 V

100mA

0V

3.1V @ 1µA

-

105 pF @ 25 V

±15V

Depletion Mode

2.25W (Ta)

45Ohm @ 100mA, 0V

150°C (TJ)

Surface Mount

SOT-223-2L

TO-261-3

CPC3720CTR

IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 350 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Vgs (Max): -
FET Feature: Depletion Mode
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 22Ohm @ 130mA, 0V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: SOT-89
Package / Case: TO-243AA

パッケージ: -

Request a Quote

MOSFET (Metal Oxide)

350 V

-

350 pF @ 25 V

-

Depletion Mode

-

22Ohm @ 130mA, 0V

-

Surface Mount

SOT-89

TO-243AA

部品番号	メーカ	説明	パッケージ	在庫	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
CPC3730C	IXYS Integrated Circuits Division	MOSFET N-CH 350V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 35 Ohm @ 140mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫6,832	MOSFET (Metal Oxide)	350V	-	0V	-	-	200pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	35 Ohm @ 140mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89	TO-243AA
CPC3720C	IXYS Integrated Circuits Division	MOSFET N-CH 350V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 22 Ohm @ 130mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫2,784	MOSFET (Metal Oxide)	350V	-	0V	-	-	350pF @ 25V	±15V	Depletion Mode	1.4W (Ta)	22 Ohm @ 130mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89	TO-243AA
CPC3714C	IXYS Integrated Circuits Division	MOSFET N-CH 350V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 240mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫7,168	MOSFET (Metal Oxide)	350V	-	0V	-	-	100pF @ 25V	±15V	Depletion Mode	1.4W (Ta)	14 Ohm @ 240mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89	TO-243AA
CPC3710C	IXYS Integrated Circuits Division	MOSFET N-CH 250V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 220mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫6,176	MOSFET (Metal Oxide)	250V	-	0V	-	-	350pF @ 25V	±15V	Depletion Mode	1.4W (Ta)	10 Ohm @ 220mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89	TO-243AA
CPC3701C	IXYS Integrated Circuits Division	MOSFET N-CH 60V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫4,144	MOSFET (Metal Oxide)	60V	-	0V	-	-	-	±15V	Depletion Mode	1.1W (Ta)	1 Ohm @ 300mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89	TO-243AA
CPC3703C	IXYS Integrated Circuits Division	MOSFET N-CH 250V 360MA SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫2,112	MOSFET (Metal Oxide)	250V	360mA (Ta)	0V	-	-	350pF @ 25V	±15V	Depletion Mode	1.6W (Ta)	4 Ohm @ 200mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89-3	TO-243AA
CPC3703ZTR	IXYS Integrated Circuits Division	MOSFET N-CH 250V SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫5,152	MOSFET (Metal Oxide)	250V	-	0V	-	-	350pF @ 25V	±15V	Depletion Mode	1.1W (Ta)	4 Ohm @ 200mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89	TO-243AA
CPC3708ZTR	IXYS Integrated Circuits Division	MOSFET N-CH 350V 0.005A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 5mA (Ta) Drive Voltage (Max Rds On, Min Rds On): -0.35V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV Operating Temperature: -40°C ~ 110°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	パッケージ: TO-261-4, TO-261AA	在庫5,120	MOSFET (Metal Oxide)	350V	5mA (Ta)	-0.35V	-	-	300pF @ 0V	±20V	Depletion Mode	2.5W (Ta)	14 Ohm @ 50mA, 350mV	-40°C ~ 110°C (TA)	Surface Mount	SOT-223	TO-261-4, TO-261AA
CPC3708CTR	IXYS Integrated Circuits Division	MOSFET N-CH 350V 0.005A SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 5mA (Ta) Drive Voltage (Max Rds On, Min Rds On): -0.35V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV Operating Temperature: -40°C ~ 110°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫2,160	MOSFET (Metal Oxide)	350V	5mA (Ta)	-0.35V	-	-	300pF @ 0V	±20V	Depletion Mode	1.1W (Ta)	14 Ohm @ 50mA, 350mV	-40°C ~ 110°C (TA)	Surface Mount	SOT-89	TO-243AA
CPC3902CTR	IXYS Integrated Circuits Division	MOSFET N-CH 250V TO-243AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 300mA, 0V Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫2,288	MOSFET (Metal Oxide)	250V	-	0V	-	-	230pF @ 20V	±15V	Depletion Mode	1.8W (Ta)	2.5 Ohm @ 300mA, 0V	125°C (TJ)	Surface Mount	SOT-89	TO-243AA
CPC3701CTR	IXYS Integrated Circuits Division	MOSFET N-CH 60V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫4,160	MOSFET (Metal Oxide)	60V	-	0V	-	-	-	±15V	Depletion Mode	1.1W (Ta)	1 Ohm @ 300mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89	TO-243AA
CPC3710CTR	IXYS Integrated Circuits Division	MOSFET N-CH 250V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 220mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫6,304	MOSFET (Metal Oxide)	250V	-	0V	-	-	350pF @ 25V	±15V	Depletion Mode	1.4W (Ta)	10 Ohm @ 220mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89	TO-243AA
CPC3909ZTR	IXYS Integrated Circuits Division	MOSFET N-CH 400V SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 15V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V Operating Temperature: -40°C ~ 110°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	パッケージ: TO-261-4, TO-261AA	在庫4,576	MOSFET (Metal Oxide)	400V	300mA (Ta)	0V	-	-	-	15V	Depletion Mode	2.5W (Ta)	9 Ohm @ 300mA, 0V	-40°C ~ 110°C (TA)	Surface Mount	SOT-223	TO-261-4, TO-261AA
CPC3909CTR	IXYS Integrated Circuits Division	MOSFET N-CH 400V SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 15V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V Operating Temperature: -40°C ~ 110°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫3,536	MOSFET (Metal Oxide)	400V	300mA (Ta)	0V	-	-	-	15V	Depletion Mode	1.1W (Ta)	9 Ohm @ 300mA, 0V	-40°C ~ 110°C (TA)	Surface Mount	SOT-89	TO-243AA
CPC3902ZTR	IXYS Integrated Circuits Division	MOSFET N-CH 250V SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 300mA, 0V Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	パッケージ: TO-261-4, TO-261AA	在庫2,464	MOSFET (Metal Oxide)	250V	-	0V	-	-	230pF @ 20V	±15V	Depletion Mode	1.8W (Tc)	2.5 Ohm @ 300mA, 0V	125°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
CPC3960ZTR	IXYS Integrated Circuits Division	MOSFET N-CH 600V SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 44 Ohm @ 100mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	パッケージ: TO-261-4, TO-261AA	在庫22,704	MOSFET (Metal Oxide)	600V	-	0V	-	-	100pF @ 25V	±15V	Depletion Mode	1.8W (Ta)	44 Ohm @ 100mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
CPC3982TTR	IXYS Integrated Circuits Division	MOSFET N-CH 800V SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 380 Ohm @ 20mA, 0V Operating Temperature: -55°C ~ 110°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫6,624	MOSFET (Metal Oxide)	800V	-	0V	-	-	20pF @ 25V	±15V	Depletion Mode	400mW (Ta)	380 Ohm @ 20mA, 0V	-55°C ~ 110°C (TA)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
CPC5603CTR	IXYS Integrated Circuits Division	MOSFET N-CH 415V 5MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 415V Current - Continuous Drain (Id) @ 25°C: 5mA (Ta) Drive Voltage (Max Rds On, Min Rds On): -0.35V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	パッケージ: TO-261-4, TO-261AA	在庫15,606	MOSFET (Metal Oxide)	415V	5mA (Ta)	-0.35V	-	-	300pF @ 0V	±20V	Depletion Mode	2.5W (Ta)	14 Ohm @ 50mA, 350mV	-40°C ~ 85°C (TA)	Surface Mount	SOT-223	TO-261-4, TO-261AA
CPC3980ZTR	IXYS Integrated Circuits Division	MOSFET N-CH 800V SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 25V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 45 Ohm @ 100mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	パッケージ: TO-261-4, TO-261AA	在庫101,886	MOSFET (Metal Oxide)	800V	-	0V	-	-	115pF @ 25V	±15V	Depletion Mode	1.8W (Ta)	45 Ohm @ 100mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
CPC5602CTR	IXYS Integrated Circuits Division	MOSFET N-CH 350V 5MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 5mA (Ta) Drive Voltage (Max Rds On, Min Rds On): -0.35V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 0V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 50mA, 350mV Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	パッケージ: TO-261-4, TO-261AA	在庫506,640	MOSFET (Metal Oxide)	350V	5mA (Ta)	-0.35V	-	-	300pF @ 0V	±20V	Depletion Mode	2.5W (Ta)	14 Ohm @ 50mA, 350mV	-40°C ~ 85°C (TA)	Surface Mount	SOT-223	TO-261-4, TO-261AA
CPC3703CTR	IXYS Integrated Circuits Division	MOSFET N-CH 250V 360MA SOT-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 200mA, 0V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	パッケージ: TO-243AA	在庫350,388	MOSFET (Metal Oxide)	250V	360mA (Ta)	0V	-	-	350pF @ 25V	±15V	Depletion Mode	1.1W (Ta)	4 Ohm @ 200mA, 0V	-55°C ~ 125°C (TA)	Surface Mount	SOT-89-3	TO-243AA
CPC3730CTR	IXYS Integrated Circuits Division	MOSFET N-CH 350V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350 V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): - FET Feature: Depletion Mode Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 35Ohm @ 140mA, 0V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	350 V	140mA (Ta)	-	-	-	200 pF @ 25 V	-	Depletion Mode	-	35Ohm @ 140mA, 0V	-	Surface Mount	SOT-89	TO-243AA
CPC3714CTR	IXYS Integrated Circuits Division	MOSFET N-CH 350V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Vgs (Max): - FET Feature: Depletion Mode Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 14Ohm @ 240mA, 0V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	350 V	-	-	-	-	100 pF @ 25 V	-	Depletion Mode	-	14Ohm @ 240mA, 0V	-	Surface Mount	SOT-89	TO-243AA
CPC3981ZTR	IXYS Integrated Circuits Division	MOSFET N-CH DEP 800V 45OH SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 100mA Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 3.1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 25 V Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 2.25W (Ta) Rds On (Max) @ Id, Vgs: 45Ohm @ 100mA, 0V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-2L Package / Case: TO-261-3	パッケージ: -	在庫8,685	MOSFET (Metal Oxide)	800 V	100mA	0V	3.1V @ 1µA	-	105 pF @ 25 V	±15V	Depletion Mode	2.25W (Ta)	45Ohm @ 100mA, 0V	150°C (TJ)	Surface Mount	SOT-223-2L	TO-261-3
CPC3720CTR	IXYS Integrated Circuits Division	MOSFET N-CH 350V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): - FET Feature: Depletion Mode Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 22Ohm @ 130mA, 0V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	350 V	-	-	-	-	350 pF @ 25 V	-	Depletion Mode	-	22Ohm @ 130mA, 0V	-	Surface Mount	SOT-89	TO-243AA