IXYS 製品

IXGH34N60B2

IXYS

IGBT 600V 70A 190W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 24A
• Power - Max: 190W
• Switching Energy: 640µJ (off)
• Input Type: Standard
• Gate Charge: 66nC
• Td (on/off) @ 25°C: 13ns/150ns
• Test Condition: 400V, 24A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

パッケージ: TO-247-3

IXGH12N60BD1

IXYS

IGBT 600V 24A 100W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 48A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 500µJ (off)
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 20ns/150ns
• Test Condition: 480V, 12A, 18 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

パッケージ: TO-247-3

IXGA12N120A3

IXYS

IGBT 1200V 22A 100W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 22A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 20.4nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXYN100N120B3H1

IXYS

IGBT XPT 1200V 152A SOT-227B

• IGBT Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 165A
• Power - Max: 690W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
• Current - Collector Cutoff (Max): 50µA
• Input Capacitance (Cies) @ Vce: 6nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

パッケージ: SOT-227-4, miniBLOC

IXTV102N20T

IXYS

MOSFET N-CH 200V 102A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 750W (Tc)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

パッケージ: TO-220-3, Short Tab

IXFR150N15

IXYS

MOSFET N-CH 150V 105A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

パッケージ: ISOPLUS247?

IXTH6N90

IXYS

MOSFET N-CH 900V 6A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

パッケージ: TO-247-3

IXTP27N20T

IXYS

MOSFET N-CH 200V 27A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: TO-220-3

GWM70-01P2

IXYS

MOSFET 6N-CH 100V 70A ISODIL

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 70A
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: ISOPLUS-DIL?
• Supplier Device Package: ISOPLUS-DIL?

パッケージ: ISOPLUS-DIL?

MCO450-20IO1

IXYS

MOD THYRISTOR SGL 2000V Y1-CU

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2000V
• Current - On State (It (AV)) (Max): 464A
• Current - On State (It (RMS)) (Max): 750A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 300mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 16000A
• Current - Hold (Ih) (Max): 300mA
• Operating Temperature: -40°C ~ 130°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU

パッケージ: Y1-CU

VVZB170-16NO1

IXYS

RECT BRIDGE 3PH 175A 1600V E2

• Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
• Number of SCRs, Diodes: 2 SCRs, 2 Diodes
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 170A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 95mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E2

パッケージ: E2

MDK600-12N1

IXYS

DIODE MODULE 1.2KV 883A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 883A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 18µs
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: Module

HTZ180D22K

IXYS

DIODE MODULE 22KV 1.3A

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 22000V
• Current - Average Rectified (Io) (per Diode): 1.3A
• Voltage - Forward (Vf) (Max) @ If: 22V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 22000V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: Module

MDD172-08N1

IXYS

DIODE MODULE 800V 190A Y4-M6

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 190A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Y4-M6
• Supplier Device Package: Y4-M6

パッケージ: Y4-M6

VBO36-08NO8

IXYS

RECT BRIDGE 30A 800V FO-B

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, FO-B
• Supplier Device Package: FO-B

パッケージ: 4-Square, FO-B

IXA531L4T/R

IXYS

IC BRIDGE DRVR 3PH 500MA 44-PLCC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 8 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 600mA, 600mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 650V
• Rise / Fall Time (Typ): 125ns, 50ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead)
• Supplier Device Package: 44-PLCC

パッケージ: 44-LCC (J-Lead)

IXCY30M35A

IXYS

IC CURRENT REGULATOR DPAK

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 30mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

SLPN005H10L

IXYS

SOLARPN HI-EFF 223X143X2MM

• Power (Watts) - Max: 5.39W
• Current @ Pmpp: 980mA
• Voltage @ Pmpp: 5.5V
• Current Short Circuit (Isc): 1A
• Type: Monocrystalline
• Voltage - Open Circuit: 6.3V
• Operating Temperature: -
• Package / Case: Cells
• Size / Dimension: 8.780" L x 5.630" W x 0.079" H (223.00mm x 143.00mm x 2.00mm)

パッケージ: Cells

KXOB22-01X8

IXYS

MONO SOLAR CELL 22MM X 7MM

• Power (Watts) - Max: -
• Current @ Pmpp: 3.8mA
• Voltage @ Pmpp: 3.4V
• Current Short Circuit (Isc): 4.4mA
• Type: Monocrystalline
• Voltage - Open Circuit: 4.7V
• Operating Temperature: -
• Package / Case: Cell (8)
• Size / Dimension: 0.866" L x 0.276" W x 0.074" H (22.00mm x 7.00mm x 1.80mm)

パッケージ: Cell (8)

MDMA660U1600PT-PC

IXYS

MDMA660U1600PTEH-PC

• Structure: -
• Number of SCRs, Diodes: -
• Voltage - Off State: -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -

パッケージ: -

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W1263YC160

IXYS

DIODE GEN PURP 1.6KV 1263A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io): 1263A
• Voltage - Forward (Vf) (Max) @ If: 2.12 V @ 3770 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 17 µs
• Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: -

IXFP13N60X3

IXYS

DISCRETE MOSFET 13A 600V X3 TO22

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

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IXTA16N50P-TRL

IXYS

MOSFET N-CH 500V 16A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

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IXGT25N250HV

IXYS

IGBT 2500V 60A TO268HV

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
• Power - Max: 250 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 75 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268HV (IXGT)

パッケージ: -

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IXFM15N60

IXYS

MOSFET N-CH 600V 15A TO204AE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 500mOhm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-204AE
• Package / Case: TO-204AE

パッケージ: -

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DSB15IM30UC-TUB

IXYS

DIODE SCHOTTKY 30V 15A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 mA @ 30 V
• Capacitance @ Vr, F: 292pF @ 24V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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MIXA80W1200PTEH

IXYS

IGBT MODULE SIXPACK E3-PACK-PF

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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DSS6-0025BS-TRL

IXYS

DIODE SCHOTTKY 25V 6A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 25 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 400 mV @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 6 mA @ 25 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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