ページ 174 - IXYS 製品 | Heisener Electronics

部品番号	メーカ	説明	パッケージ	在庫
IXGA16N60C2D1	IXYS	IGBT 600V 40A 150W TO263 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Power - Max: 150W Switching Energy: 160µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 16ns/75ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫6,784
IXBX75N170	IXYS	IGBT 1700V 200A 1040W PLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 580A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A Power - Max: 1040W Switching Energy: - Input Type: Standard Gate Charge: 350nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.5µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	パッケージ: TO-247-3	在庫3,328
MWI75-12T7T	IXYS	IGBT MOD TRENCH SIX-PACK E3 IGBT Type: Trench Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 110A Power - Max: 355W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 5.35nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	パッケージ: E2	在庫2,448
IXFR15N100Q	IXYS	MOSFET N-CH ISOPLUS247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫6,064
IXTY64N055T	IXYS	MOSFET N-CH 55V 64A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫631,824
IXTA110N055T	IXYS	MOSFET N-CH 55V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫7,632
IXTN32P60P	IXYS	MOSFET P-CH 600V 32A SOT227 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	パッケージ: SOT-227-4, miniBLOC	在庫7,504
IXFX88N20Q	IXYS	MOSFET N-CH 200V 88A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫4,528
IXFH23N60Q	IXYS	MOSFET N-CH 600V 23A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	パッケージ: TO-247-3	在庫6,912
IXFR24N80P	IXYS	MOSFET N-CH 800V 13A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	パッケージ: ISOPLUS247?	在庫7,568
IXFQ50N60X	IXYS	MOSFET N-CH 600V 50A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	パッケージ: TO-3P-3, SC-65-3	在庫5,984
IXFP20N50P3M	IXYS	MOSFET N-CH 500V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫4,896
IXFN27N80	IXYS	MOSFET N-CH 800V 27A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 27A Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	パッケージ: SOT-227-4, miniBLOC	在庫4,896
IXTA36P15P	IXYS	MOSFET P-CH 150V 36A TO-263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫7,044
VVZ24-12IO1	IXYS	BRIDGE RECT 3 PHASE 1200V 27A Structure: Bridge, 3-Phase - SCRs/Diodes Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 21A Current - On State (It (RMS)) (Max): 16A Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 65mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 320A Current - Hold (Ih) (Max): 100mA Operating Temperature: - Mounting Type: Chassis Mount Package / Case: KAMM	パッケージ: KAMM	在庫3,312
VWO95-14IO7	IXYS	MODULE AC CTLR 3PH 1400V PWS-F Structure: 3-Phase Controller - All SCRs Number of SCRs, Diodes: 6 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 44A Current - On State (It (RMS)) (Max): 69A Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	パッケージ: Module	在庫5,424
MCMA65P1600TA	IXYS	MOD THYRISTOR DUAL 16KV TO-240 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 65A Current - On State (It (RMS)) (Max): 105A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 95mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1240A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	パッケージ: TO-240AA	在庫3,680
DSEP15-06A	IXYS	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.04V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫10,728
MDD172-12N1	IXYS	DIODE MODULE 1.2KV 190A Y4-M6 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 190A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 1200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y4-M6 Supplier Device Package: Y4-M6	パッケージ: Y4-M6	在庫4,016
DSEP2X31-06A	IXYS	DIODE MODULE 600V 30A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 2.49V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 250µA @ 600V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	パッケージ: SOT-227-4, miniBLOC	在庫6,496
DPG60C300PC	IXYS	DIODE ARRAY GP 300V 30A TO263 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1µA @ 300V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak)	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫7,472
IXDI430YI	IXYS	IC DRVR MOSF/IGBT 30A TO263-5 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 8.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 30A, 30A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 18ns, 16ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA Supplier Device Package: TO-263 (D2Pak)	パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	在庫5,280
IXBOD1-24R	IXYS	IC DIODE MODULE BOD 0.9A 2400V Voltage - Clamping: 2400V (2.4kV) Technology: Mixed Technology Number of Circuits: 3 Number of Circuits: 3 Applications: High Voltage Mounting Type: PCB, Through Hole Package / Case: Radial Supplier Device Package: BOD	パッケージ: Radial	在庫7,452
IXFA30N25X3	IXYS	MOSFET N-CHANNEL 250V 30A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	在庫513
MCMA240UI1600P-PC	IXYS	SCR MODULE Structure: - Number of SCRs, Diodes: - Voltage - Off State: - Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): - Current - Hold (Ih) (Max): - Operating Temperature: - Mounting Type: - Package / Case: -	パッケージ: -	Request a Quote
IXTY90N055T2	IXYS	MOSFET N-CH 55V 90A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote
IXYP30N120A4	IXYS	IGBT DISCRETE TO-220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 106 A Current - Collector Pulsed (Icm): 184 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Power - Max: 500 W Switching Energy: 4mJ (on), 3.4mJ (off) Input Type: Standard Gate Charge: 57 nC Td (on/off) @ 25°C: 15ns/235ns Test Condition: 960V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): 42 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 (IXYP)	パッケージ: -	Request a Quote
MMIX1Y82N120C3H1	IXYS	DISC IGBT SMPD PKG-STANDARD SMPD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 78 A Current - Collector Pulsed (Icm): 320 A Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 82A Power - Max: 320 W Switching Energy: 4.95mJ (on), 2.78mJ (off) Input Type: Standard Gate Charge: 215 nC Td (on/off) @ 25°C: 29ns/192ns Test Condition: 600V, 80A, 2Ohm, 15V Reverse Recovery Time (trr): 78 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-PowerSMD, 21 Leads Supplier Device Package: 24-SMPD	パッケージ: -	Request a Quote

IXGA16N60C2D1

IXYS

IGBT 600V 40A 150W TO263

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Power - Max: 150W
Switching Energy: 160µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 25nC
Td (on/off) @ 25°C: 16ns/75ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXGA)

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫6,784

IXBX75N170

IXYS

IGBT 1700V 200A 1040W PLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 200A
Current - Collector Pulsed (Icm): 580A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
Power - Max: 1040W
Switching Energy: -
Input Type: Standard
Gate Charge: 350nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.5µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

パッケージ: TO-247-3

在庫3,328

MWI75-12T7T

IXYS

IGBT MOD TRENCH SIX-PACK E3

IGBT Type: Trench
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 110A
Power - Max: 355W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 5.35nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

パッケージ: E2

在庫2,448

IXFR15N100Q

IXYS

MOSFET N-CH ISOPLUS247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫6,064

IXTY64N055T

IXYS

MOSFET N-CH 55V 64A TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫631,824

IXTA110N055T

IXYS

MOSFET N-CH 55V 110A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫7,632

IXTN32P60P

IXYS

MOSFET P-CH 600V 32A SOT227

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 32A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

在庫7,504

IXFX88N20Q

IXYS

MOSFET N-CH 200V 88A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫4,528

IXFH23N60Q

IXYS

MOSFET N-CH 600V 23A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫6,912

IXFR24N80P

IXYS

MOSFET N-CH 800V 13A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 420 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

パッケージ: ISOPLUS247?

在庫7,568

IXFQ50N60X

IXYS

MOSFET N-CH 600V 50A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 660W (Tc)
Rds On (Max) @ Id, Vgs: 73 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

在庫5,984

IXFP20N50P3M

IXYS

MOSFET N-CH 500V 8A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫4,896

IXFN27N80

IXYS

MOSFET N-CH 800V 27A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 27A
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9740pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 13.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

在庫4,896

IXTA36P15P

IXYS

MOSFET P-CH 150V 36A TO-263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫7,044

VVZ24-12IO1

IXYS

BRIDGE RECT 3 PHASE 1200V 27A

Structure: Bridge, 3-Phase - SCRs/Diodes
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 21A
Current - On State (It (RMS)) (Max): 16A
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 65mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 320A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: KAMM

パッケージ: KAMM

在庫3,312

VWO95-14IO7

IXYS

MODULE AC CTLR 3PH 1400V PWS-F

Structure: 3-Phase Controller - All SCRs
Number of SCRs, Diodes: 6 SCRs
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 44A
Current - On State (It (RMS)) (Max): 69A
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

パッケージ: Module

在庫5,424

MCMA65P1600TA

IXYS

MOD THYRISTOR DUAL 16KV TO-240

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 65A
Current - On State (It (RMS)) (Max): 105A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 95mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1240A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

パッケージ: TO-240AA

在庫3,680

DSEP15-06A

IXYS

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.04V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫10,728

MDD172-12N1

IXYS

DIODE MODULE 1.2KV 190A Y4-M6

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 190A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 1200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Supplier Device Package: Y4-M6

パッケージ: Y4-M6

在庫4,016

DSEP2X31-06A

IXYS

DIODE MODULE 600V 30A SOT227B

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 2.49V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

パッケージ: SOT-227-4, miniBLOC

在庫6,496

DPG60C300PC

IXYS

DIODE ARRAY GP 300V 30A TO263

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 300V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫7,472

IXDI430YI

IXYS

IC DRVR MOSF/IGBT 30A TO263-5

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 8.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 18ns, 16ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Supplier Device Package: TO-263 (D2Pak)

パッケージ: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

在庫5,280

IXBOD1-24R

IXYS

IC DIODE MODULE BOD 0.9A 2400V

Voltage - Clamping: 2400V (2.4kV)
Technology: Mixed Technology
Number of Circuits: 3
Number of Circuits: 3
Applications: High Voltage
Mounting Type: PCB, Through Hole
Package / Case: Radial
Supplier Device Package: BOD

パッケージ: Radial

在庫7,452

IXFA30N25X3

IXYS

MOSFET N-CHANNEL 250V 30A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA (IXFA)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

在庫513

MCMA240UI1600P-PC

IXYS

SCR MODULE

Structure: -
Number of SCRs, Diodes: -
Voltage - Off State: -
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): -
Current - Hold (Ih) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -

パッケージ: -

Request a Quote

IXTY90N055T2

IXYS

MOSFET N-CH 55V 90A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

Request a Quote

IXYP30N120A4

IXYS

IGBT DISCRETE TO-220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 106 A
Current - Collector Pulsed (Icm): 184 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Power - Max: 500 W
Switching Energy: 4mJ (on), 3.4mJ (off)
Input Type: Standard
Gate Charge: 57 nC
Td (on/off) @ 25°C: 15ns/235ns
Test Condition: 960V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr): 42 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 (IXYP)

パッケージ: -

Request a Quote

MMIX1Y82N120C3H1

IXYS

DISC IGBT SMPD PKG-STANDARD SMPD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 78 A
Current - Collector Pulsed (Icm): 320 A
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 82A
Power - Max: 320 W
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Input Type: Standard
Gate Charge: 215 nC
Td (on/off) @ 25°C: 29ns/192ns
Test Condition: 600V, 80A, 2Ohm, 15V
Reverse Recovery Time (trr): 78 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Supplier Device Package: 24-SMPD

パッケージ: -

Request a Quote