ページ 188 - IXYS 製品 | Heisener Electronics

部品番号	メーカ	説明	パッケージ	在庫
IXGT24N60CD1	IXYS	IGBT 600V 48A 150W TO268 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Power - Max: 150W Switching Energy: 240µJ (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25°C: 15ns/75ns Test Condition: 480V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	在庫4,000
IXGH12N60C	IXYS	IGBT 600V 24A 100W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 90µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 20ns/60ns Test Condition: 480V, 12A, 18 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	パッケージ: TO-247-3	在庫3,360
IXGR120N60B	IXYS	IGBT 600V 156A 520W ISOPLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 156A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Power - Max: 520W Switching Energy: 2.4mJ (on), 5.5mJ (off) Input Type: Standard Gate Charge: 350nC Td (on/off) @ 25°C: 60ns/200ns Test Condition: 480V, 100A, 2.4 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	パッケージ: ISOPLUS247?	在庫3,216
IXGX50N60B2D1	IXYS	IGBT 600V 75A 400W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 400W Switching Energy: 550µJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: 18ns/190ns Test Condition: 480V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	パッケージ: TO-247-3	在庫2,064
IXBP5N160G	IXYS	IGBT 1600V 5.7A 68W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1600V Current - Collector (Ic) (Max): 5.7A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 7.2V @ 15V, 3A Power - Max: 68W Switching Energy: - Input Type: Standard Gate Charge: 26nC Td (on/off) @ 25°C: - Test Condition: 960V, 3A, 47 Ohm, 10V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-247AD	パッケージ: TO-220-3	在庫4,336
MIXA101W1200EH	IXYS	IGBT MODULE 1200V 108A HEX IGBT Type: PT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 155A Power - Max: 500W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 300µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	パッケージ: E3	在庫5,328
IXFD24N50Q-72	IXYS	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫6,704
IXTH160N075T	IXYS	MOSFET N-CH 75V 160A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	パッケージ: TO-247-3	在庫2,848
IXFH110N25T	IXYS	MOSFET N-CH 250V 110A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	パッケージ: TO-247-3	在庫4,544
IXTP80N10T	IXYS	MOSFET N-CH 100V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫79,236
IXFN82N60P	IXYS	MOSFET N-CH 600V 72A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 41A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	パッケージ: SOT-227-4, miniBLOC	在庫7,008
CLA50E1200TC	IXYS	THYRISTOR PHASE 1200V TO-268 Voltage - Off State: 1200V Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 50mA Voltage - On State (Vtm) (Max): 1.6V Current - On State (It (AV)) (Max): 50A Current - On State (It (RMS)) (Max): 80A Current - Hold (Ih) (Max): 75mA Current - Off State (Max): 50µA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 590A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA	パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	在庫2,192
MCK500-12IO1	IXYS	SCR THYRISTOR CA 1200V WC-500 Structure: Common Cathode - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 545A Current - On State (It (RMS)) (Max): 1294A Voltage - Gate Trigger (Vgt) (Max): 3V Current - Gate Trigger (Igt) (Max): 300mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz Current - Hold (Ih) (Max): 1A Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: WC-500	パッケージ: WC-500	在庫3,520
VCC105-16IO7	IXYS	MOD THYRISTOR 1600V 105A ECOPAC2 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 105A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2	パッケージ: ECO-PAC2	在庫7,424
MCMA85P1600TA	IXYS	MOD THYRISTOR DUAL 16KV TO-240 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 85A Current - On State (It (RMS)) (Max): 135A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 95mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	パッケージ: TO-240AA	在庫6,016
MDA600-12N1	IXYS	DIODE MODULE 1.2KV 883A Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 883A Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18µs Current - Reverse Leakage @ Vr: 50mA @ 1200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: Module	在庫7,424
DHG50X1200NA	IXYS	DIODE MODULE 1.2KV 25A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 25A Voltage - Forward (Vf) (Max) @ If: 2.12V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	パッケージ: SOT-227-4, miniBLOC	在庫6,944
DSEC16-06A	IXYS	DIODE ARRAY GP 600V 10A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 60µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫10,248
DSS2X41-01A	IXYS	DIODE MODULE 100V 40A SOT227B Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 40A Voltage - Forward (Vf) (Max) @ If: 880mV @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	パッケージ: SOT-227-4, miniBLOC	在庫7,040
VUO16-16NO1	IXYS	RECT BRIDGE 3PH 20A 1600V V1-A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 130°C (TJ) Mounting Type: Chassis Mount Package / Case: V1-A Supplier Device Package: V1-A	パッケージ: V1-A	在庫5,376
VBO72-08NO7	IXYS	DIODE BRIDGE 800V 72A PWS-D Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 72A Voltage - Forward (Vf) (Max) @ If: 1.08V @ 30A Current - Reverse Leakage @ Vr: 100µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-D Supplier Device Package: PWS-D	パッケージ: PWS-D	在庫6,848
VBO25-16AO2	IXYS	BRIDGE RECT SGL PHASE 1600V 38A Diode Type: Single Phase Technology: Avalanche Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 38A Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-A Supplier Device Package: FO-A	パッケージ: 4-Square, FO-A	在庫3,392
IXCP30M45	IXYS	IC CURRENT REGULATOR TO220AB Function: Current Regulator Sensing Method: - Accuracy: - Voltage - Input: - Current - Output: 30mA Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: TO-220-3	在庫7,376
IXBH32N300HV	IXYS	DISC IGBT BIMSFT-VERYHIVOLT TO-2 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 280 A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A Power - Max: 400 W Switching Energy: - Input Type: Standard Gate Charge: 142 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: TO-247HV	パッケージ: -	Request a Quote
IXTU4N70X2	IXYS	MOSFET N-CH 700V 4A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Stub Leads, IPAK	パッケージ: -	Request a Quote
IXFP44N25X3	IXYS	MOSFET N-CH 250V 44A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	パッケージ: -	Request a Quote
MIXG240W1200TEH	IXYS	IGBT MODULE - SIXPACK E3-PACK-PF IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 370 A Power - Max: 1250 W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: E3	パッケージ: -	Request a Quote
CMA60MT1600NHB	IXYS	TRIAC 1.6KV 66A TO247 Triac Type: Standard Voltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 66 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A Current - Gate Trigger (Igt) (Max): 60 mA Current - Hold (Ih) (Max): 60 mA Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	パッケージ: -	Request a Quote

IXGT24N60CD1

IXYS

IGBT 600V 48A 150W TO268

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Power - Max: 150W
Switching Energy: 240µJ (off)
Input Type: Standard
Gate Charge: 55nC
Td (on/off) @ 25°C: 15ns/75ns
Test Condition: 480V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

在庫4,000

IXGH12N60C

IXYS

IGBT 600V 24A 100W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 48A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 100W
Switching Energy: 90µJ (off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 20ns/60ns
Test Condition: 480V, 12A, 18 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

パッケージ: TO-247-3

在庫3,360

IXGR120N60B

IXYS

IGBT 600V 156A 520W ISOPLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 156A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Power - Max: 520W
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Input Type: Standard
Gate Charge: 350nC
Td (on/off) @ 25°C: 60ns/200ns
Test Condition: 480V, 100A, 2.4 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

パッケージ: ISOPLUS247?

在庫3,216

IXGX50N60B2D1

IXYS

IGBT 600V 75A 400W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: 400W
Switching Energy: 550µJ (off)
Input Type: Standard
Gate Charge: 140nC
Td (on/off) @ 25°C: 18ns/190ns
Test Condition: 480V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr): 35ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

パッケージ: TO-247-3

在庫2,064

IXBP5N160G

IXYS

IGBT 1600V 5.7A 68W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1600V
Current - Collector (Ic) (Max): 5.7A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 7.2V @ 15V, 3A
Power - Max: 68W
Switching Energy: -
Input Type: Standard
Gate Charge: 26nC
Td (on/off) @ 25°C: -
Test Condition: 960V, 3A, 47 Ohm, 10V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-247AD

パッケージ: TO-220-3

在庫4,336

MIXA101W1200EH

IXYS

IGBT MODULE 1200V 108A HEX

IGBT Type: PT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 155A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 300µA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3

パッケージ: E3

在庫5,328

IXFD24N50Q-72

IXYS

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫6,704

IXTH160N075T

IXYS

MOSFET N-CH 75V 160A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫2,848

IXFH110N25T

IXYS

MOSFET N-CH 250V 110A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫4,544

IXTP80N10T

IXYS

MOSFET N-CH 100V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫79,236

IXFN82N60P

IXYS

MOSFET N-CH 600V 72A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 75 mOhm @ 41A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

在庫7,008

CLA50E1200TC

IXYS

THYRISTOR PHASE 1200V TO-268

Voltage - Off State: 1200V
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 50mA
Voltage - On State (Vtm) (Max): 1.6V
Current - On State (It (AV)) (Max): 50A
Current - On State (It (RMS)) (Max): 80A
Current - Hold (Ih) (Max): 75mA
Current - Off State (Max): 50µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 590A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

在庫2,192

MCK500-12IO1

IXYS

SCR THYRISTOR CA 1200V WC-500

Structure: Common Cathode - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 545A
Current - On State (It (RMS)) (Max): 1294A
Voltage - Gate Trigger (Vgt) (Max): 3V
Current - Gate Trigger (Igt) (Max): 300mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Hold (Ih) (Max): 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: WC-500

パッケージ: WC-500

在庫3,520

VCC105-16IO7

IXYS

MOD THYRISTOR 1600V 105A ECOPAC2

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 105A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2

パッケージ: ECO-PAC2

在庫7,424

MCMA85P1600TA

IXYS

MOD THYRISTOR DUAL 16KV TO-240

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 85A
Current - On State (It (RMS)) (Max): 135A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 95mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

パッケージ: TO-240AA

在庫6,016

MDA600-12N1

IXYS

DIODE MODULE 1.2KV 883A

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 883A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18µs
Current - Reverse Leakage @ Vr: 50mA @ 1200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: Module

在庫7,424

DHG50X1200NA

IXYS

DIODE MODULE 1.2KV 25A SOT227B

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 25A
Voltage - Forward (Vf) (Max) @ If: 2.12V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

パッケージ: SOT-227-4, miniBLOC

在庫6,944

DSEC16-06A

IXYS

DIODE ARRAY GP 600V 10A TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 60µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫10,248

DSS2X41-01A

IXYS

DIODE MODULE 100V 40A SOT227B

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 40A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

パッケージ: SOT-227-4, miniBLOC

在庫7,040

VUO16-16NO1

IXYS

RECT BRIDGE 3PH 20A 1600V V1-A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1-A
Supplier Device Package: V1-A

パッケージ: V1-A

在庫5,376

VBO72-08NO7

IXYS

DIODE BRIDGE 800V 72A PWS-D

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 72A
Voltage - Forward (Vf) (Max) @ If: 1.08V @ 30A
Current - Reverse Leakage @ Vr: 100µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-D
Supplier Device Package: PWS-D

パッケージ: PWS-D

在庫6,848

VBO25-16AO2

IXYS

BRIDGE RECT SGL PHASE 1600V 38A

Diode Type: Single Phase
Technology: Avalanche
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 38A
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, FO-A
Supplier Device Package: FO-A

パッケージ: 4-Square, FO-A

在庫3,392

IXCP30M45

IXYS

IC CURRENT REGULATOR TO220AB

Function: Current Regulator
Sensing Method: -
Accuracy: -
Voltage - Input: -
Current - Output: 30mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

パッケージ: TO-220-3

在庫7,376

IXBH32N300HV

IXYS

DISC IGBT BIMSFT-VERYHIVOLT TO-2

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 280 A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Power - Max: 400 W
Switching Energy: -
Input Type: Standard
Gate Charge: 142 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: TO-247HV

パッケージ: -

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IXTU4N70X2

IXYS

MOSFET N-CH 700V 4A TO251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251-3
Package / Case: TO-251-3 Stub Leads, IPAK

パッケージ: -

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IXFP44N25X3

IXYS

MOSFET N-CH 250V 44A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 240W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

パッケージ: -

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MIXG240W1200TEH

IXYS

IGBT MODULE - SIXPACK E3-PACK-PF

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 370 A
Power - Max: 1250 W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 10.6 nF @ 100 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: E3

パッケージ: -

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CMA60MT1600NHB

IXYS

TRIAC 1.6KV 66A TO247

Triac Type: Standard
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 66 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 60 mA
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

パッケージ: -

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