ページ 35 - IXYS 製品 | Heisener Electronics

部品番号	メーカ	説明	パッケージ	在庫
IXGF20N250	IXYS	IGBT 2500V 23A 100W I4-PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A Power - Max: 100W Switching Energy: - Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	パッケージ: i4-Pac?-5 (3 leads)	在庫5,552
IXGR60N60C3C1	IXYS	IGBT 600V 75A 170W ISOPLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 260A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 170W Switching Energy: 830µJ (on), 450µJ (off) Input Type: Standard Gate Charge: 115nC Td (on/off) @ 25°C: 24ns/70ns Test Condition: 480V, 40A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	パッケージ: ISOPLUS247?	在庫5,744
IXGT16N170A	IXYS	IGBT 1700V 16A 190W TO268 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A Power - Max: 190W Switching Energy: 900µJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 36ns/160ns Test Condition: 850V, 16A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	在庫3,216
IXGT20N140C3H1	IXYS	IGBT 1400V 42A 250W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1400V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 108A Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A Power - Max: 250W Switching Energy: 1.35mJ (on), 440µJ (off) Input Type: Standard Gate Charge: 88nC Td (on/off) @ 25°C: 19ns/110ns Test Condition: 700V, 20A, 5 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	在庫6,848
IXGH32N170A	IXYS	IGBT 1700V 32A 350W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A Power - Max: 350W Switching Energy: 1.5mJ (off) Input Type: Standard Gate Charge: 155nC Td (on/off) @ 25°C: 46ns/260ns Test Condition: 850V, 32A, 2.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	パッケージ: TO-247-3	在庫118,800
IXGN60N60C2	IXYS	IGBT 600V 75A SOT-227B IGBT Type: PT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Power - Max: 480W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Current - Collector Cutoff (Max): 650µA Input Capacitance (Cies) @ Vce: 4.75nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	パッケージ: SOT-227-4, miniBLOC	在庫5,056
IXTA02N450HV	IXYS	MOSFET N-CH 4500V 0.2A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 750 Ohm @ 10mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫5,664
IXTC13N50	IXYS	MOSFET N-CH 500V 12A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	パッケージ: ISOPLUS220?	在庫2,896
IXTH200N075T	IXYS	MOSFET N-CH 75V 200A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	パッケージ: TO-247-3	在庫68,640
IXFT15N100Q	IXYS	MOSFET N-CH 1000V 15A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	在庫3,888
IXFX60N55Q2	IXYS	MOSFET N-CH 550V 60A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫7,056
IXFR21N100Q	IXYS	MOSFET N-CH 1KV 18A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	パッケージ: ISOPLUS247?	在庫4,672
IXFK120N30T	IXYS	MOSFET N-CH 300V 120A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫6,848
IXTK170N10P	IXYS	MOSFET N-CH 100V 170A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 715W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫3,920
IXTP110N055P	IXYS	MOSFET N-CH 55V 110A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫4,720
IXTP170N075T2	IXYS	MOSFET N-CH 75V 170A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫450,564
IXTA48N20T	IXYS	MOSFET N-CH 200V 48A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫6,240
IXTY1N100P	IXYS	MOSFET N-CH 1000V 1A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫7,120
IXZH10N50L2A	IXYS	RF MOSFET N-CHANNEL TO-247 Transistor Type: N-Channel Frequency: 2MHz ~ 110MHz Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: 200W Voltage - Rated: 500V Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXFH)	パッケージ: TO-247-3	在庫5,024
VGO55-16IO7	IXYS	RECT BRIDGE 1PH 1600V FO-T-A Structure: Bridge, Single Phase - SCRs/Diodes (Layout 3) Number of SCRs, Diodes: 2 SCRs, 2 Diodes Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 53A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A	パッケージ: FO-T-A	在庫2,288
MCC162-14IO1	IXYS	MOD THYRISTOR DUAL 1400V Y4-M6 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 190A Current - On State (It (RMS)) (Max): 300A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4-M6	パッケージ: Y4-M6	在庫5,104
MMO175-08IO7	IXYS	MODULE AC CONTROL 800V ECO-PAC1 Structure: 1-Phase Controller - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 800V Current - On State (It (AV)) (Max): 80A Current - On State (It (RMS)) (Max): 125A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	パッケージ: Module	在庫3,600
VBO55-16NO7	IXYS	DIODE BRIDGE 1600V 55A FO-T-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 55A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Reverse Leakage @ Vr: 500µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A Supplier Device Package: FO-T-A	パッケージ: FO-T-A	在庫6,112
VBO13-14NO2	IXYS	DIODE BRIDGE 18A 1400V 1PH FO-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 55A Current - Reverse Leakage @ Vr: 300µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-A Supplier Device Package: FO-A	パッケージ: 4-Square, FO-A	在庫4,208
VUO86-14NO7	IXYS	RECT BRIDGE 3PH 1400V ECO-PAC1 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 86A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A Current - Reverse Leakage @ Vr: 40µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	パッケージ: ECO-PAC1	在庫5,280
N1806QK160	IXYS	SCR 1.6KV 3571A WP2 Voltage - Off State: 1.6 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 2.4 V Current - On State (It (AV)) (Max): 1806 A Current - On State (It (RMS)) (Max): 3571 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AB, B-PuK Supplier Device Package: WP2	パッケージ: -	Request a Quote
IXFP30N25X3	IXYS	MOSFET N-CHANNEL 250V 30A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	パッケージ: -	在庫297
MIXG180W1200PT-PC	IXYS	IGBT MODULE MIXG180W1200PTEH-PC IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote

IXGF20N250

IXYS

IGBT 2500V 23A 100W I4-PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Power - Max: 100W
Switching Energy: -
Input Type: Standard
Gate Charge: 53nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5 (3 leads)
Supplier Device Package: ISOPLUS i4-PAC?

パッケージ: i4-Pac?-5 (3 leads)

在庫5,552

IXGR60N60C3C1

IXYS

IGBT 600V 75A 170W ISOPLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 260A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Power - Max: 170W
Switching Energy: 830µJ (on), 450µJ (off)
Input Type: Standard
Gate Charge: 115nC
Td (on/off) @ 25°C: 24ns/70ns
Test Condition: 480V, 40A, 3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

パッケージ: ISOPLUS247?

在庫5,744

IXGT16N170A

IXYS

IGBT 1700V 16A 190W TO268

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
Power - Max: 190W
Switching Energy: 900µJ (off)
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 36ns/160ns
Test Condition: 850V, 16A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

在庫3,216

IXGT20N140C3H1

IXYS

IGBT 1400V 42A 250W TO268

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1400V
Current - Collector (Ic) (Max): 42A
Current - Collector Pulsed (Icm): 108A
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A
Power - Max: 250W
Switching Energy: 1.35mJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 88nC
Td (on/off) @ 25°C: 19ns/110ns
Test Condition: 700V, 20A, 5 Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

在庫6,848

IXGH32N170A

IXYS

IGBT 1700V 32A 350W TO247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 32A
Current - Collector Pulsed (Icm): 110A
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Power - Max: 350W
Switching Energy: 1.5mJ (off)
Input Type: Standard
Gate Charge: 155nC
Td (on/off) @ 25°C: 46ns/260ns
Test Condition: 850V, 32A, 2.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

パッケージ: TO-247-3

在庫118,800

IXGN60N60C2

IXYS

IGBT 600V 75A SOT-227B

IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Current - Collector Cutoff (Max): 650µA
Input Capacitance (Cies) @ Vce: 4.75nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

パッケージ: SOT-227-4, miniBLOC

在庫5,056

IXTA02N450HV

IXYS

MOSFET N-CH 4500V 0.2A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 4500V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 750 Ohm @ 10mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫5,664

IXTC13N50

IXYS

MOSFET N-CH 500V 12A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

パッケージ: ISOPLUS220?

在庫2,896

IXTH200N075T

IXYS

MOSFET N-CH 75V 200A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫68,640

IXFT15N100Q

IXYS

MOSFET N-CH 1000V 15A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

在庫3,888

IXFX60N55Q2

IXYS

MOSFET N-CH 550V 60A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 88 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫7,056

IXFR21N100Q

IXYS

MOSFET N-CH 1KV 18A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

パッケージ: ISOPLUS247?

在庫4,672

IXFK120N30T

IXYS

MOSFET N-CH 300V 120A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫6,848

IXTK170N10P

IXYS

MOSFET N-CH 100V 170A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫3,920

IXTP110N055P

IXYS

MOSFET N-CH 55V 110A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫4,720

IXTP170N075T2

IXYS

MOSFET N-CH 75V 170A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫450,564

IXTA48N20T

IXYS

MOSFET N-CH 200V 48A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 24A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫6,240

IXTY1N100P

IXYS

MOSFET N-CH 1000V 1A TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 15 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫7,120

IXZH10N50L2A

IXYS

RF MOSFET N-CHANNEL TO-247

Transistor Type: N-Channel
Frequency: 2MHz ~ 110MHz
Gain: -
Voltage - Test: -
Current Rating: 1mA
Noise Figure: -
Current - Test: -
Power - Output: 200W
Voltage - Rated: 500V
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXFH)

パッケージ: TO-247-3

在庫5,024

VGO55-16IO7

IXYS

RECT BRIDGE 1PH 1600V FO-T-A

Structure: Bridge, Single Phase - SCRs/Diodes (Layout 3)
Number of SCRs, Diodes: 2 SCRs, 2 Diodes
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 53A
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-T-A

パッケージ: FO-T-A

在庫2,288

MCC162-14IO1

IXYS

MOD THYRISTOR DUAL 1400V Y4-M6

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 190A
Current - On State (It (RMS)) (Max): 300A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6

パッケージ: Y4-M6

在庫5,104

MMO175-08IO7

IXYS

MODULE AC CONTROL 800V ECO-PAC1

Structure: 1-Phase Controller - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 800V
Current - On State (It (AV)) (Max): 80A
Current - On State (It (RMS)) (Max): 125A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

パッケージ: Module

在庫3,600

VBO55-16NO7

IXYS

DIODE BRIDGE 1600V 55A FO-T-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 55A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-T-A
Supplier Device Package: FO-T-A

パッケージ: FO-T-A

在庫6,112

VBO13-14NO2

IXYS

DIODE BRIDGE 18A 1400V 1PH FO-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 18A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 55A
Current - Reverse Leakage @ Vr: 300µA @ 1400V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, FO-A
Supplier Device Package: FO-A

パッケージ: 4-Square, FO-A

在庫4,208

VUO86-14NO7

IXYS

RECT BRIDGE 3PH 1400V ECO-PAC1

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 86A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
Current - Reverse Leakage @ Vr: 40µA @ 1400V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

パッケージ: ECO-PAC1

在庫5,280

N1806QK160

IXYS

SCR 1.6KV 3571A WP2

Voltage - Off State: 1.6 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 2.4 V
Current - On State (It (AV)) (Max): 1806 A
Current - On State (It (RMS)) (Max): 3571 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Supplier Device Package: WP2

パッケージ: -

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IXFP30N25X3

IXYS

MOSFET N-CHANNEL 250V 30A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

パッケージ: -

在庫297

MIXG180W1200PT-PC

IXYS

IGBT MODULE MIXG180W1200PTEH-PC

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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