ページ 63 - IXYS 製品 | Heisener Electronics

部品番号	メーカ	説明	パッケージ	在庫
IXGK400N30A3	IXYS	IGBT 300V 400A 1000W TO264AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 400A Current - Collector Pulsed (Icm): 1200A Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A Power - Max: 1000W Switching Energy: - Input Type: Standard Gate Charge: 560nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXGK)	パッケージ: TO-264-3, TO-264AA	在庫5,712
IXA20RG1200DHGLB	IXYS	IGBT 1200V 32A 125W SMPD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 125W Switching Energy: 1.55mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25°C: - Test Condition: 600V, 15A, 56 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-SMD Module Supplier Device Package: ISOPLUS-SMPD?.B	パッケージ: 9-SMD Module	在庫7,760
IXGN100N120	IXYS	IGBT 160A 1200V SOT-227B IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	パッケージ: SOT-227-4, miniBLOC	在庫6,448
IXTY12N06TTRL	IXYS	MOSFET N-CH 60V 12A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫5,808
IXTV280N055T	IXYS	MOSFET N-CH 55V 280A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	パッケージ: TO-220-3, Short Tab	在庫5,312
IXFV16N80PS	IXYS	MOSFET N-CH 800V 16A PLUS220-S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	パッケージ: PLUS-220SMD	在庫2,528
IXFK200N10P	IXYS	MOSFET N-CH 100V 200A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	パッケージ: TO-264-3, TO-264AA	在庫6,912
IXFA4N85X	IXYS	MOSFET N-CH 850V 3.5A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫5,584
IXZR08N120B-00	IXYS	RF MOSFET N-CHANNEL PLUS247-3 Transistor Type: N-Channel Frequency: 100MHz Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: 250W Voltage - Rated: 1200V Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	パッケージ: TO-247-3	在庫7,984
GMM3X180-004X2-SMD	IXYS	MOSFET 6N-CH 40V 180A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD, Gull Wing Supplier Device Package: 24-SMD	パッケージ: 24-SMD, Gull Wing	在庫2,080
DPG10I200PM	IXYS	DIODE GEN PURP 200V 10A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.27V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2 Full Pack, Isolated Tab	在庫6,960
MDK600-22N1	IXYS	DIODE MODULE 2.2KV 883A Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io) (per Diode): 883A Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18µs Current - Reverse Leakage @ Vr: 50mA @ 2200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: Module	在庫6,896
DSEC30-03A	IXYS	DIODE ARRAY GP 300V 15A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 1.67V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 100µA @ 300V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	パッケージ: TO-3P-3 Full Pack	在庫3,856
DPF240X200NA	IXYS	DIODE ARRAY 200V 120A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 120A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	パッケージ: SOT-227-4, miniBLOC	在庫3,392
VBO130-08NO7	IXYS	BRIDGE RECTIFIER SINGLE PHASE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 122A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 120A Current - Reverse Leakage @ Vr: 200µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: PWS-E	パッケージ: Module	在庫7,472
VUO82-14NO7	IXYS	RECT BRIDGE 3PH 88A 1400V PWS-D Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 88A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-D Supplier Device Package: PWS-D	パッケージ: PWS-D	在庫7,440
IXDN504SIA	IXYS	IC GATE DRIVER DUAL 4A 8-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 9ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫2,800
IXDD514PI	IXYS	IC GATE DRIVER 14A 8-DIP Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 1V, 2.5V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 22ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫3,680
IXA611M6	IXYS	IC DRIVER HALF BRDG 600MA 16-MLP Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 35 V Logic Voltage - VIL, VIH: 6V, 7V Current - Peak Output (Source, Sink): 600mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650V Rise / Fall Time (Typ): 23ns, 22ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VDFN Exposed Pad Supplier Device Package: 16-MLP (7x6)	パッケージ: 16-VDFN Exposed Pad	在庫6,944
IXDN404PI	IXYS	IC MOSFET DRIVER LS 4A DUAL 8DIP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 16ns, 13ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫7,664
IXBOD1-12RD	IXYS	IC DIODE MODULE BOD 0.2A 1200V Voltage - Clamping: 1200V (1.2kV) Technology: Mixed Technology Number of Circuits: 2 Number of Circuits: 2 Applications: High Voltage Mounting Type: PCB, Through Hole Package / Case: Radial Supplier Device Package: BOD	パッケージ: Radial	在庫8,640
DVRFM631DF12N100	IXYS	IXZ631DF12N100 DEV BOARD Type: MOSFET Driver Frequency: - For Use With/Related Products: IXZ631DF12N100 Supplied Contents: Board	パッケージ: -	在庫8,856
IX6611TR	IXYS	IC MOSF DRIVER Applications: Overvoltage, Undervoltage Protection Current - Supply: 3mA Voltage - Supply: 13 V ~ 25 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.154", 3.90mm Width) Exposed Pad	在庫5,152
IXFR1871	IXYS	MOSFET N-CH18A ISOPLUS247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote
MCNA120PD2200T-NMI	IXYS	MCNA120PD2200TB-NMI Structure: - Number of SCRs, Diodes: - Voltage - Off State: - Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): - Current - Hold (Ih) (Max): - Operating Temperature: - Mounting Type: - Package / Case: -	パッケージ: -	Request a Quote
IXYA30N120A4HV	IXYS	DISC IGBT XPT-GENX4 TO-263D2 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 106 A Current - Collector Pulsed (Icm): 184 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A Power - Max: 500 W Switching Energy: 4mJ (on), 3.4mJ (off) Input Type: Standard Gate Charge: 57 nC Td (on/off) @ 25°C: 15ns/235ns Test Condition: 960V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): 42 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV	パッケージ: -	Request a Quote
IXYK120N120B3	IXYS	DISC IGBT XPT-GENX3 TO-264(3) IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 320 A Current - Collector Pulsed (Icm): 800 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Power - Max: 1500 W Switching Energy: 9.7mJ (on), 21.5mJ (off) Input Type: Standard Gate Charge: 400 nC Td (on/off) @ 25°C: 30ns/340ns Test Condition: 960V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): 54 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXYK)	パッケージ: -	Request a Quote
IXYH20N65B3	IXYS	DISC IGBT XPT-GENX3 TO-247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 58 A Current - Collector Pulsed (Icm): 108 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 230 W Switching Energy: 500µJ (on), 450µJ (off) Input Type: Standard Gate Charge: 29 nC Td (on/off) @ 25°C: 12ns/103ns Test Condition: 400V, 20A, 20Ohm, 15V Reverse Recovery Time (trr): 25 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	パッケージ: -	Request a Quote

IXGK400N30A3

IXYS

IGBT 300V 400A 1000W TO264AA

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 400A
Current - Collector Pulsed (Icm): 1200A
Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
Power - Max: 1000W
Switching Energy: -
Input Type: Standard
Gate Charge: 560nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXGK)

パッケージ: TO-264-3, TO-264AA

在庫5,712

IXA20RG1200DHGLB

IXYS

IGBT 1200V 32A 125W SMPD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 32A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Power - Max: 125W
Switching Energy: 1.55mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 48nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 15A, 56 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD?.B

パッケージ: 9-SMD Module

在庫7,760

IXGN100N120

IXYS

IGBT 160A 1200V SOT-227B

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 160A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

パッケージ: SOT-227-4, miniBLOC

在庫6,448

IXTY12N06TTRL

IXYS

MOSFET N-CH 60V 12A TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫5,808

IXTV280N055T

IXYS

MOSFET N-CH 55V 280A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

パッケージ: TO-220-3, Short Tab

在庫5,312

IXFV16N80PS

IXYS

MOSFET N-CH 800V 16A PLUS220-S

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

パッケージ: PLUS-220SMD

在庫2,528

IXFK200N10P

IXYS

MOSFET N-CH 100V 200A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

パッケージ: TO-264-3, TO-264AA

在庫6,912

IXFA4N85X

IXYS

MOSFET N-CH 850V 3.5A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXFA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫5,584

IXZR08N120B-00

IXYS

RF MOSFET N-CHANNEL PLUS247-3

Transistor Type: N-Channel
Frequency: 100MHz
Gain: -
Voltage - Test: -
Current Rating: 1mA
Noise Figure: -
Current - Test: -
Power - Output: 250W
Voltage - Rated: 1200V
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

パッケージ: TO-247-3

在庫7,984

GMM3X180-004X2-SMD

IXYS

MOSFET 6N-CH 40V 180A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD

パッケージ: 24-SMD, Gull Wing

在庫2,080

DPG10I200PM

IXYS

DIODE GEN PURP 200V 10A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.27V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2 Full Pack, Isolated Tab

在庫6,960

MDK600-22N1

IXYS

DIODE MODULE 2.2KV 883A

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io) (per Diode): 883A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18µs
Current - Reverse Leakage @ Vr: 50mA @ 2200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: Module

在庫6,896

DSEC30-03A

IXYS

DIODE ARRAY GP 300V 15A TO247AD

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 100µA @ 300V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD

パッケージ: TO-3P-3 Full Pack

在庫3,856

DPF240X200NA

IXYS

DIODE ARRAY 200V 120A SOT227B

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

パッケージ: SOT-227-4, miniBLOC

在庫3,392

VBO130-08NO7

IXYS

BRIDGE RECTIFIER SINGLE PHASE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 122A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 120A
Current - Reverse Leakage @ Vr: 200µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: PWS-E

パッケージ: Module

在庫7,472

VUO82-14NO7

IXYS

RECT BRIDGE 3PH 88A 1400V PWS-D

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 88A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1400V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-D
Supplier Device Package: PWS-D

パッケージ: PWS-D

在庫7,440

IXDN504SIA

IXYS

IC GATE DRIVER DUAL 4A 8-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 30 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 9ns, 8ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫2,800

IXDD514PI

IXYS

IC GATE DRIVER 14A 8-DIP

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 30 V
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 14A, 14A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 22ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫3,680

IXA611M6

IXYS

IC DRIVER HALF BRDG 600MA 16-MLP

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 35 V
Logic Voltage - VIL, VIH: 6V, 7V
Current - Peak Output (Source, Sink): 600mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650V
Rise / Fall Time (Typ): 23ns, 22ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VDFN Exposed Pad
Supplier Device Package: 16-MLP (7x6)

パッケージ: 16-VDFN Exposed Pad

在庫6,944

IXDN404PI

IXYS

IC MOSFET DRIVER LS 4A DUAL 8DIP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 16ns, 13ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫7,664

IXBOD1-12RD

IXYS

IC DIODE MODULE BOD 0.2A 1200V

Voltage - Clamping: 1200V (1.2kV)
Technology: Mixed Technology
Number of Circuits: 2
Number of Circuits: 2
Applications: High Voltage
Mounting Type: PCB, Through Hole
Package / Case: Radial
Supplier Device Package: BOD

パッケージ: Radial

在庫8,640

DVRFM631DF12N100

IXYS

IXZ631DF12N100 DEV BOARD

Type: MOSFET Driver
Frequency: -
For Use With/Related Products: IXZ631DF12N100
Supplied Contents: Board

パッケージ: -

在庫8,856

IX6611TR

IXYS

IC MOSF DRIVER

Applications: Overvoltage, Undervoltage Protection
Current - Supply: 3mA
Voltage - Supply: 13 V ~ 25 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.154", 3.90mm Width) Exposed Pad

在庫5,152

IXFR1871

IXYS

MOSFET N-CH18A ISOPLUS247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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MCNA120PD2200T-NMI

IXYS

MCNA120PD2200TB-NMI

Structure: -
Number of SCRs, Diodes: -
Voltage - Off State: -
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): -
Current - Hold (Ih) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -

パッケージ: -

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IXYA30N120A4HV

IXYS

DISC IGBT XPT-GENX4 TO-263D2

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 106 A
Current - Collector Pulsed (Icm): 184 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Power - Max: 500 W
Switching Energy: 4mJ (on), 3.4mJ (off)
Input Type: Standard
Gate Charge: 57 nC
Td (on/off) @ 25°C: 15ns/235ns
Test Condition: 960V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr): 42 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV

パッケージ: -

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IXYK120N120B3

IXYS

DISC IGBT XPT-GENX3 TO-264(3)

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 320 A
Current - Collector Pulsed (Icm): 800 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Power - Max: 1500 W
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Input Type: Standard
Gate Charge: 400 nC
Td (on/off) @ 25°C: 30ns/340ns
Test Condition: 960V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr): 54 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXYK)

パッケージ: -

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IXYH20N65B3

IXYS

DISC IGBT XPT-GENX3 TO-247AD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 58 A
Current - Collector Pulsed (Icm): 108 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Power - Max: 230 W
Switching Energy: 500µJ (on), 450µJ (off)
Input Type: Standard
Gate Charge: 29 nC
Td (on/off) @ 25°C: 12ns/103ns
Test Condition: 400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr): 25 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

パッケージ: -

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