Micro Commercial Co 製品

SI3139K-TP

Micro Commercial Co

P-CHANNEL MOSFET, SOT-723 PACKAG

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 660mA
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 150mW
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-723
• Package / Case: SOT-723

パッケージ: SOT-723

LLDB3-TP

Micro Commercial Co

DIAC 28-36V 2A MINIMELF

• Voltage - Breakover: 28 ~ 36V
• Current - Breakover: 50µA
• Current - Hold (Ih) (Max): -
• Current - Peak Output: 2A
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

パッケージ: DO-213AC, MINI-MELF, SOD-80

BZT52C4V3-TP

Micro Commercial Co

DIODE ZENER 4.3V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±7%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

BZT52C4V7-TP

Micro Commercial Co

DIODE ZENER 4.7V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±6%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

BAP64-05-TP

Micro Commercial Co

DIODE RF PIN 175V 100MA SOT23

• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (Max): 175V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (Max): 250mW
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

RL103-N-2-3-AP

Micro Commercial Co

DIODE GEN PURP 200V 1A A-405

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: Axial, Radial Bend
• Supplier Device Package: A-405
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: Axial, Radial Bend

SK24-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 2A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA, HSMB
• Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-214AA, SMB

S3D-TP

Micro Commercial Co

DIODE GEN PURP 200V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

SK1535-TP

Micro Commercial Co

DIODE SCHOTTKY 35V 15A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 35V
• Capacitance @ Vr, F: 500pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-214AB, SMC

KBP06M-BP

Micro Commercial Co

DIODE BRIDGE 2A 600V KBPR

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPR
• Supplier Device Package: KBPR

パッケージ: 4-SIP, KBPR

5KP78A-TP

Micro Commercial Co

TVS DIODE 78VWM 126VC R6

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 78V
• Voltage - Breakdown (Min): 86.7V
• Voltage - Clamping (Max) @ Ipp: 126V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: R6, Axial
• Supplier Device Package: R-6

パッケージ: R6, Axial

MBR1620FCT-BP

Micro Commercial Co

DIODE ARR SCHOT 20V 16A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 20 V
• Operating Temperature - Junction: -50°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Isolated Tab
• Supplier Device Package: ITO-220AB

パッケージ: -

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MCU65P04-TP

Micro Commercial Co

P-CHANNEL MOSFET, DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 59.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3354 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 96W (Tj)
• Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

RS1007-BP

Micro Commercial Co

Interface

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 10 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: 4-SIP, RS-6
• Supplier Device Package: RS-6

パッケージ: -

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2SB861-B-BP

Micro Commercial Co

TRANS PNP 150V 2A TO220AB

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2 A
• Voltage - Collector Emitter Breakdown (Max): 150 V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
• Power - Max: 1.8 W
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: -

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B05100W-TP

Micro Commercial Co

DIODE SCHOTTKY 100V 500MA SOD123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 500 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 100 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

MCQ4953-TP

Micro Commercial Co

MOSFET 2P-CH 30V 5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A
• Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 2.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

パッケージ: -

KBJ10005G-BP

Micro Commercial Co

Interface

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50 V
• Current - Average Rectified (Io): 10 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBJ
• Supplier Device Package: KBJ

パッケージ: -

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SB15100-TP

Micro Commercial Co

DIODE 15A DO201AD

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -

パッケージ: -

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TBL401-TP

Micro Commercial Co

Interface

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100 V
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: TBL

パッケージ: -

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TBL402-TP

Micro Commercial Co

Interface

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200 V
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: TBL

パッケージ: -

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GBJ2002-BP

Micro Commercial Co

Interface

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200 V
• Current - Average Rectified (Io): 20 A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

パッケージ: -

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MCAC70N15YHE3-TP

Micro Commercial Co

MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tj)
• Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN5060
• Package / Case: 8-PowerTDFN

パッケージ: -

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BC847CWHE3-TP

Micro Commercial Co

NPN TRANSISTORS, SOT-323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 200 mW
• Frequency - Transition: 150MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

パッケージ: -

1N4001GP-AP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2 µs
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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MCG18P02A-TP

Micro Commercial Co

MCG18P02A-TP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 18A
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 52W
• Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN3030-8
• Package / Case: 8-PowerWDFN

パッケージ: -

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MUR1040FCT-BP

Micro Commercial Co

DIODE ARRAY GP 400V 10A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Operating Temperature - Junction: -50°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Isolated Tab
• Supplier Device Package: ITO-220AB

パッケージ: -

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SF58G-TP

Micro Commercial Co

DIODE GEN PURP 600V 5A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: -

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