ページ 4 - Microchip Technology 製品 - トランジスタ - FET、MOSFET - アレイ

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MSCMC170AM08CT6LIAG	Microchip Technology	SIC 2N-CH 1700V 280A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 300A, 20V Vgs(th) (Max) @ Id: 4V @ 108mA Gate Charge (Qg) (Max) @ Vgs: 1128nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 1000V Power - Max: 1780W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	パッケージ: -	Request a Quote	-	1700V (1.7kV)	280A (Tc)	11.7mOhm @ 300A, 20V	4V @ 108mA	1128nC @ 20V	22000pF @ 1000V	1780W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP6C LI
MSCSM70AM025T6AG	Microchip Technology	SIC 2N-CH 700V 689A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Power - Max: 1.882kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	700V	689A (Tc)	3.2mOhm @ 240A, 20V	2.4V @ 24mA	1290nC @ 20V	27000pF @ 700V	1.882kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120DDUM16CTBL3NG	Microchip Technology	SIC 4N-CH 1200V 150A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 560W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1200V (1.2kV)	150A	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	560W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70HM19T3AG	Microchip Technology	SIC 4N-CH 700V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	在庫24	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120VR1M31C1AG	Microchip Technology	SIC 2N-CH 1200V 89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170HRM233AG	Microchip Technology	SIC 4N-CH 1700V/1200V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc), 89A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA, 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V, 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V, 3020pF @ 1000V Power - Max: 602W (Tc), 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	124A (Tc), 89A (Tc)	22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V	3.2V @ 5mA, 2.8V @ 3mA	356nC @ 20V, 232nC @ 20V	6600pF @ 1000V, 3020pF @ 1000V	602W (Tc), 395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120TLM08CAG	Microchip Technology	SIC 4N-CH 1200V 333A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 333A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V Power - Max: 1378W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	パッケージ: -	在庫15	-	1200V (1.2kV)	333A (Tc)	7.8mOhm @ 80A, 20V	2.8V @ 4mA	928nC @ 20V	12000pF @ 1000V	1378W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
APTMC120HR11CT3AG	Microchip Technology	SIC 2N-CH 1200V 26A SP3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Power - Max: 125W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	パッケージ: -	Request a Quote	-	1200V (1.2kV)	26A (Tc)	98mOhm @ 20A, 20V	3V @ 5mA	62nC @ 20V	950pF @ 1000V	125W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP3
MSCSM70AM10CT3AG	Microchip Technology	SIC 2N-CH 700V 241A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 690W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	パッケージ: -	在庫9	-	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	690W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM70TAM19CT3AG	Microchip Technology	SIC 6N-CH 700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	パッケージ: -	在庫9	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM70TLM19C3AG	Microchip Technology	SIC 4N-CH 700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Power - Max: 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	パッケージ: -	在庫15	-	700V	124A (Tc)	19mOhm @ 40A, 20V	2.4V @ 4mA	215nC @ 20V	4500pF @ 700V	365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM120AM042CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 495A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV Power - Max: 2.031kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	パッケージ: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 6mA	1392nC @ 20V	18100pF @ 1kV	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
MSCSM170AM058CT6LIAG	Microchip Technology	SIC 2N-CH 1700V 353A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Power - Max: 1.642kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	在庫6	-	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	19800pF @ 1000V	1.642kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70VR1M10CT3AG	Microchip Technology	SIC 2N-CH 700V 241A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 690W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	在庫12	-	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	690W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120DUM027AG	Microchip Technology	SIC 2N-CH 1200V 733A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Power - Max: 2968W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 9mA	2088nC @ 20V	27000pF @ 1000V	2968W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170HM45CT3AG	Microchip Technology	SIC 4N-CH 1700V 64A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Power - Max: 319W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	在庫12	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70TLM05CAG	Microchip Technology	SIC 4N-CH 700V 464A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 464A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V Vgs(th) (Max) @ Id: 2.4V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V Power - Max: 1277W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	パッケージ: -	在庫15	-	700V	464A (Tc)	4.8mOhm @ 160A, 20V	2.4V @ 16mA	860nC @ 20V	18000pF @ 700V	1277W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
MSCSM120DUM042AG	Microchip Technology	SIC 2N-CH 1200V 495A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Power - Max: 2031W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 6mA	1392nC @ 20V	18100pF @ 1000V	2031W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM11T3AG	Microchip Technology	SIC 2N-CH 1200V 254A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Power - Max: 1.067kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1200V (1.2kV)	254A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 9mA	696nC @ 20V	9060pF @ 1000V	1.067kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70TLM10C3AG	Microchip Technology	SIC 4N-CH 700V 241A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 690W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: Module Supplier Device Package: Module	パッケージ: -	在庫45	-	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA (Typ)	430nC @ 20V	9000pF @ 700V	690W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	Module	Module
MSCSM120DDUM31CTBL2NG	Microchip Technology	SIC 4N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70VR1M10CTPAG	Microchip Technology	SIC 6N-CH 700V 238A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 674W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	在庫6	-	700V	238A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	674W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170AM45CT1AG	Microchip Technology	SIC 2N-CH 1700V 64A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Power - Max: 319W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM027D3AG	Microchip Technology	SIC 2N-CH 1200V 733A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.8V @ 27mA Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Power - Max: 2.97kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 27mA	2088nC @ 20V	27000pF @ 1000V	2.97kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120TAM16TPAG	Microchip Technology	SIC 6N-CH 1200V 171A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 728W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1200V (1.2kV)	171A (Tc)	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	728W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70TLM07CAG	Microchip Technology	SIC 4N-CH 700V 349A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 349A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Power - Max: 966W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	パッケージ: -	在庫12	-	700V	349A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	966W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
MSCSM120HRM163AG	Microchip Technology	SIC 4N-CH 1200V/700V 173A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V Power - Max: 745W (Tc), 365W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1200V (1.2kV), 700V	173A (Tc), 124A (Tc)	16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V	2.8V @ 6mA, 2.4V @ 4mA	464nC, 215nC @ 20V	6040pF @ 1000V, 4500pF @ 700V	745W (Tc), 365W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170HRM11NG	Microchip Technology	SIC 4N-CH 1700V/1200V 226A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 226A (Tc), 163A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA, 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V, 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V, 6040pF @ 1000V Power - Max: 1.012kW (Tc), 662W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	パッケージ: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	226A (Tc), 163A (Tc)	11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V	3.2V @ 10mA, 2.8V @ 6mA	712nC @ 20V, 464nC @ 20V	13200pF @ 1000V, 6040pF @ 1000V	1.012kW (Tc), 662W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-

MSCMC170AM08CT6LIAG

Microchip Technology

SIC 2N-CH 1700V 280A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 300A, 20V
Vgs(th) (Max) @ Id: 4V @ 108mA
Gate Charge (Qg) (Max) @ Vgs: 1128nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 1000V
Power - Max: 1780W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

パッケージ: -

Request a Quote

-

1700V (1.7kV)

280A (Tc)

11.7mOhm @ 300A, 20V

4V @ 108mA

1128nC @ 20V

22000pF @ 1000V

1780W (Tc)

-40°C ~ 150°C (TJ)

Chassis Mount

Module

SP6C LI

MSCSM70AM025T6AG

Microchip Technology

SIC 2N-CH 700V 689A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Power - Max: 1.882kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

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-

700V

689A (Tc)

3.2mOhm @ 240A, 20V

2.4V @ 24mA

1290nC @ 20V

27000pF @ 700V

1.882kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120DDUM16CTBL3NG

Microchip Technology

SIC 4N-CH 1200V 150A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 560W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

Request a Quote

-

1200V (1.2kV)

150A

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

560W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70HM19T3AG

Microchip Technology

SIC 4N-CH 700V 124A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Power - Max: 365W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

在庫24

-

700V

124A (Tc)

19mOhm @ 40A, 20V

2.4V @ 4mA

215nC @ 20V

4500pF @ 700V

365W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120VR1M31C1AG

Microchip Technology

SIC 2N-CH 1200V 89A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

Request a Quote

-

1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 3mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM170HRM233AG

Microchip Technology

SIC 4N-CH 1700V/1200V 124A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc), 89A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA, 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V, 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V, 3020pF @ 1000V
Power - Max: 602W (Tc), 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

Request a Quote

-

1700V (1.7kV), 1200V (1.2kV)

124A (Tc), 89A (Tc)

22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V

3.2V @ 5mA, 2.8V @ 3mA

356nC @ 20V, 232nC @ 20V

6600pF @ 1000V, 3020pF @ 1000V

602W (Tc), 395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120TLM08CAG

Microchip Technology

SIC 4N-CH 1200V 333A SP6C

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Power - Max: 1378W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C

パッケージ: -

在庫15

-

1200V (1.2kV)

333A (Tc)

7.8mOhm @ 80A, 20V

2.8V @ 4mA

928nC @ 20V

12000pF @ 1000V

1378W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C

APTMC120HR11CT3AG

Microchip Technology

SIC 2N-CH 1200V 26A SP3

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
Power - Max: 125W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3

パッケージ: -

Request a Quote

-

1200V (1.2kV)

26A (Tc)

98mOhm @ 20A, 20V

3V @ 5mA

62nC @ 20V

950pF @ 1000V

125W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

SP3

MSCSM70AM10CT3AG

Microchip Technology

SIC 2N-CH 700V 241A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 690W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

パッケージ: -

在庫9

-

700V

241A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

430nC @ 20V

9000pF @ 700V

690W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM70TAM19CT3AG

Microchip Technology

SIC 6N-CH 700V 124A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Power - Max: 365W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

パッケージ: -

在庫9

-

700V

124A (Tc)

19mOhm @ 40A, 20V

2.4V @ 4mA

215nC @ 20V

4500pF @ 700V

365W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM70TLM19C3AG

Microchip Technology

SIC 4N-CH 700V 124A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Power - Max: 365W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

パッケージ: -

在庫15

-

700V

124A (Tc)

19mOhm @ 40A, 20V

2.4V @ 4mA

215nC @ 20V

4500pF @ 700V

365W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM120AM042CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 495A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
Power - Max: 2.031kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

パッケージ: -

Request a Quote

-

1200V (1.2kV)

495A (Tc)

5.2mOhm @ 240A, 20V

2.8V @ 6mA

1392nC @ 20V

18100pF @ 1kV

2.031kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

MSCSM170AM058CT6LIAG

Microchip Technology

SIC 2N-CH 1700V 353A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
Power - Max: 1.642kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

在庫6

-

1700V (1.7kV)

353A (Tc)

7.5mOhm @ 180A, 20V

3.3V @ 15mA

1068nC @ 20V

19800pF @ 1000V

1.642kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70VR1M10CT3AG

Microchip Technology

SIC 2N-CH 700V 241A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 690W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

在庫12

-

700V

241A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

430nC @ 20V

9000pF @ 700V

690W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120DUM027AG

Microchip Technology

SIC 2N-CH 1200V 733A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Power - Max: 2968W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

Request a Quote

-

1200V (1.2kV)

733A (Tc)

3.5mOhm @ 360A, 20V

2.8V @ 9mA

2088nC @ 20V

27000pF @ 1000V

2968W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM170HM45CT3AG

Microchip Technology

SIC 4N-CH 1700V 64A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
Power - Max: 319W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

在庫12

-

1700V (1.7kV)

64A (Tc)

45mOhm @ 30A, 20V

3.2V @ 2.5mA

178nC @ 20V

3300pF @ 1000V

319W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70TLM05CAG

Microchip Technology

SIC 4N-CH 700V 464A SP6C

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Power - Max: 1277W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C

パッケージ: -

在庫15

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700V

464A (Tc)

4.8mOhm @ 160A, 20V

2.4V @ 16mA

860nC @ 20V

18000pF @ 700V

1277W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C

MSCSM120DUM042AG

Microchip Technology

SIC 2N-CH 1200V 495A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Power - Max: 2031W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

Request a Quote

-

1200V (1.2kV)

495A (Tc)

5.2mOhm @ 240A, 20V

2.8V @ 6mA

1392nC @ 20V

18100pF @ 1000V

2031W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120AM11T3AG

Microchip Technology

SIC 2N-CH 1200V 254A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Power - Max: 1.067kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

Request a Quote

-

1200V (1.2kV)

254A (Tc)

10.4mOhm @ 120A, 20V

2.8V @ 9mA

696nC @ 20V

9060pF @ 1000V

1.067kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70TLM10C3AG

Microchip Technology

SIC 4N-CH 700V 241A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 690W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: Module
Supplier Device Package: Module

パッケージ: -

在庫45

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700V

241A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA (Typ)

430nC @ 20V

9000pF @ 700V

690W (Tc)

-40°C ~ 175°C (TJ)

Through Hole

Module

MSCSM120DDUM31CTBL2NG

Microchip Technology

SIC 4N-CH 1200V 79A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 310W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

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1200V (1.2kV)

79A

31mOhm @ 40A, 20V

2.8V @ 1mA

232nC @ 20V

3020pF @ 1000V

310W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

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MSCSM70VR1M10CTPAG

Microchip Technology

SIC 6N-CH 700V 238A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 674W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

在庫6

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700V

238A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

430nC @ 20V

9000pF @ 700V

674W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM170AM45CT1AG

Microchip Technology

SIC 2N-CH 1700V 64A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
Power - Max: 319W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

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1700V (1.7kV)

64A (Tc)

45mOhm @ 30A, 20V

3.2V @ 2.5mA

178nC @ 20V

3300pF @ 1000V

319W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

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MSCSM120AM027D3AG

Microchip Technology

SIC 2N-CH 1200V 733A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Power - Max: 2.97kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

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1200V (1.2kV)

733A (Tc)

3.5mOhm @ 360A, 20V

2.8V @ 27mA

2088nC @ 20V

27000pF @ 1000V

2.97kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120TAM16TPAG

Microchip Technology

SIC 6N-CH 1200V 171A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 728W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

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1200V (1.2kV)

171A (Tc)

16mOhm @ 80A, 20V

2.8V @ 6mA

464nC @ 20V

6040pF @ 1000V

728W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70TLM07CAG

Microchip Technology

SIC 4N-CH 700V 349A SP6C

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Power - Max: 966W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C

パッケージ: -

在庫12

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700V

349A (Tc)

6.4mOhm @ 120A, 20V

2.4V @ 12mA

645nC @ 20V

13500pF @ 700V

966W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C

MSCSM120HRM163AG

Microchip Technology

SIC 4N-CH 1200V/700V 173A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V
Power - Max: 745W (Tc), 365W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

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1200V (1.2kV), 700V

173A (Tc), 124A (Tc)

16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V

2.8V @ 6mA, 2.4V @ 4mA

464nC, 215nC @ 20V

6040pF @ 1000V, 4500pF @ 700V

745W (Tc), 365W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

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MSCSM170HRM11NG

Microchip Technology

SIC 4N-CH 1700V/1200V 226A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 226A (Tc), 163A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA, 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V, 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V, 6040pF @ 1000V
Power - Max: 1.012kW (Tc), 662W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

パッケージ: -

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-

1700V (1.7kV), 1200V (1.2kV)

226A (Tc), 163A (Tc)

11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V

3.2V @ 10mA, 2.8V @ 6mA

712nC @ 20V, 464nC @ 20V

13200pF @ 1000V, 6040pF @ 1000V

1.012kW (Tc), 662W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

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