ページ 22 - Micron Technology Inc. 製品 - メモリ

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT55L256L32FT-12IT	Micron Technology Inc.	IC SRAM 8MBIT PAR 83MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - ZBT Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: 83 MHz Write Cycle Time - Word, Page: - Access Time: 9 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	パッケージ: -	Request a Quote	SRAM	SRAM - ZBT	8Mbit	Parallel	83 MHz	-	9 ns	3.135V ~ 3.465V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT62F4D1BDS-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR5 PLASTIC MI Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT61M512M32KPA-14-N-C-TR	Micron Technology Inc.	GDDR6 16G 512MX32 FBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2T08ELLEEG7-QB-E	Micron Technology Inc.	TLC 2T 256GX8 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F2G32D4DS-026-AAT-ES-B	Micron Technology Inc.	LPDDR5 64G 2GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	Parallel	3.2 GHz	-	-	1.05V	-40°C ~ 105°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT55L128L36F1T-11	Micron Technology Inc.	IC SRAM 4MBIT PAR 90MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - ZBT Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 90 MHz Write Cycle Time - Word, Page: - Access Time: 8.5 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	パッケージ: -	Request a Quote	SRAM	SRAM - ZBT	4Mbit	Parallel	90 MHz	-	8.5 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT57W1MH18BF-4	Micron Technology Inc.	IC SRAM 18MBIT HSTL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mbit Memory Interface: HSTL Clock Frequency: 250 MHz Write Cycle Time - Word, Page: - Access Time: 450 ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: -	Request a Quote	SRAM	SRAM - Synchronous, DDR II	18Mbit	HSTL	250 MHz	-	450 ps	1.7V ~ 1.9V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-FBGA (13x15)
MT55L1MY18PT-6	Micron Technology Inc.	IC SRAM 18MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous, ZBT Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 3.5 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	パッケージ: -	Request a Quote	SRAM	SRAM - Asynchronous, ZBT	18Mbit	Parallel	166 MHz	-	3.5 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MTFC128GBEAZHF-WT-TR	Micron Technology Inc.	UFS 1T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT40A256M16LY-062E-AUT-F-TR	Micron Technology Inc.	DDR4 4G 256MX16 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gbit Memory Interface: POD Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 19 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR4	4Gbit	POD	1.6 GHz	15ns	19 ns	1.14V ~ 1.26V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MT29F2T08ELLEEG7-QD-E	Micron Technology Inc.	TLC 2T 256GX8 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1536M32DDNQ-046-WT-A-TR	Micron Technology Inc.	LPDDR4 48G 1.5GX32 FBGA 3DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F8G08ABACAH4-AUT-C	Micron Technology Inc.	NAND FLASH PLASTIC M71M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F1G08ABAEAM68M3WC1L	Micron Technology Inc.	IC FLASH 1GBIT DIE Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gbit Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (SLC)	1Gbit	-	-	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	Die	Die
MT40A1G8AG-062E-AIT-R-TR	Micron Technology Inc.	IC DRAM 8GBIT PARALLEL 78FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F8D1AEK-DC-TR	Micron Technology Inc.	LPDDR5 64G 1GX64 FBGA 8DP Y31M Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.01V ~ 1.12V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	48Gbit	Parallel	-	-	-	1.01V ~ 1.12V	-	-	-	-
MT41J128M16HA-125G-D-TR	Micron Technology Inc.	IC SDRAM 2GBIT 800MHZ 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: - Access Time: 13.75 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x14)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3	2Gbit	Parallel	800 MHz	-	13.75 ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x14)
MT53E512M16D1FW-046-AAT-D-TR	Micron Technology Inc.	LPDDR4 8G 512MX16 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	8Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
MT29F1T08EELEEJ4-T-E-TR	Micron Technology Inc.	TLC 1T 128GX8 VBGA DDP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.6V ~ 3.6V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	Parallel	-	-	-	2.6V ~ 3.6V	0°C ~ 70°C	Surface Mount	132-VBGA	132-VBGA (12x18)
MTFC128GAOALEA-WT	Micron Technology Inc.	EMMC 1T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E768M32D2ZW-046-AIT-C	Micron Technology Inc.	LPDDR4 24GBIT 32 200/264 TFBGA 2 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 24Gbit Memory Interface: LVSTL Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	24Gbit	LVSTL	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
MT62F4G32D8DV-023-AUT-C-TR	Micron Technology Inc.	LPDDR5 128GBIT 32 315/315 LFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F1G64D4AM-031-XT-C	Micron Technology Inc.	LPDDR5 64G 1GX64 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F768M64D4CZ-023-WT-C-TR	Micron Technology Inc.	LPDDR5 48GBIT 64 561/570 TFBGA 4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E512M32D1Z42MWC1	Micron Technology Inc.	LPDDR4 16G DIE 512MX32 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	16Gbit	Parallel	-	-	-	-	-	Surface Mount	Die	Wafer
MT40A512M16TB-062E-R	Micron Technology Inc.	IC DRAM 8GBIT PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 19 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13)	パッケージ: -	在庫1,137	DRAM	SDRAM - DDR4	8Gbit	Parallel	1.6 GHz	15ns	19 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13)
MT62F1G64D8CH-031-WT-A-TR	Micron Technology Inc.	IC DRAM 64GBIT 3.2GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: - Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	-	3.2 GHz	-	-	1.05V	-25°C ~ 85°C (TC)	-	-	-
MT53E768M64D4HJ-046-AIT-C-TR	Micron Technology Inc.	IC DRAM Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 556-TFBGA Supplier Device Package: 556-WFBGA (12.4x12.4)	パッケージ: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	48Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 95°C (TC)	Surface Mount	556-TFBGA	556-WFBGA (12.4x12.4)

MT55L256L32FT-12IT

Micron Technology Inc.

IC SRAM 8MBIT PAR 83MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - ZBT
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: 83 MHz
Write Cycle Time - Word, Page: -
Access Time: 9 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

パッケージ: -

Request a Quote

SRAM

SRAM - ZBT

8Mbit

Parallel

83 MHz

-

9 ns

3.135V ~ 3.465V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT62F4D1BDS-DC

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR5 PLASTIC MI

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT61M512M32KPA-14-N-C-TR

Micron Technology Inc.

GDDR6 16G 512MX32 FBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT29F2T08ELLEEG7-QB-E

Micron Technology Inc.

TLC 2T 256GX8 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT62F2G32D4DS-026-AAT-ES-B

Micron Technology Inc.

LPDDR5 64G 2GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

64Gbit

Parallel

3.2 GHz

-

1.05V

-40°C ~ 105°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT55L128L36F1T-11

Micron Technology Inc.

IC SRAM 4MBIT PAR 90MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - ZBT
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 90 MHz
Write Cycle Time - Word, Page: -
Access Time: 8.5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

パッケージ: -

Request a Quote

SRAM

SRAM - ZBT

4Mbit

Parallel

90 MHz

-

8.5 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT57W1MH18BF-4

Micron Technology Inc.

IC SRAM 18MBIT HSTL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mbit
Memory Interface: HSTL
Clock Frequency: 250 MHz
Write Cycle Time - Word, Page: -
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: -

Request a Quote

SRAM

SRAM - Synchronous, DDR II

18Mbit

HSTL

250 MHz

-

450 ps

1.7V ~ 1.9V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-FBGA (13x15)

MT55L1MY18PT-6

Micron Technology Inc.

IC SRAM 18MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous, ZBT
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

パッケージ: -

Request a Quote

SRAM

SRAM - Asynchronous, ZBT

18Mbit

Parallel

166 MHz

-

3.5 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MTFC128GBEAZHF-WT-TR

Micron Technology Inc.

UFS 1T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT40A256M16LY-062E-AUT-F-TR

Micron Technology Inc.

DDR4 4G 256MX16 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gbit
Memory Interface: POD
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR4

4Gbit

POD

1.6 GHz

15ns

19 ns

1.14V ~ 1.26V

-40°C ~ 125°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MT29F2T08ELLEEG7-QD-E

Micron Technology Inc.

TLC 2T 256GX8 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT53E1536M32DDNQ-046-WT-A-TR

Micron Technology Inc.

LPDDR4 48G 1.5GX32 FBGA 3DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT29F8G08ABACAH4-AUT-C

Micron Technology Inc.

NAND FLASH PLASTIC M71M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT29F1G08ABAEAM68M3WC1L

Micron Technology Inc.

IC FLASH 1GBIT DIE

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

Request a Quote

FLASH

FLASH - NAND (SLC)

1Gbit

-

2.7V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

Die

MT40A1G8AG-062E-AIT-R-TR

Micron Technology Inc.

IC DRAM 8GBIT PARALLEL 78FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-

MT62F8D1AEK-DC-TR

Micron Technology Inc.

LPDDR5 64G 1GX64 FBGA 8DP Y31M

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.01V ~ 1.12V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR5

48Gbit

Parallel

-

1.01V ~ 1.12V

-

MT41J128M16HA-125G-D-TR

Micron Technology Inc.

IC SDRAM 2GBIT 800MHZ 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: -
Access Time: 13.75 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x14)

パッケージ: -

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DRAM

SDRAM - DDR3

2Gbit

Parallel

800 MHz

-

13.75 ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x14)

MT53E512M16D1FW-046-AAT-D-TR

Micron Technology Inc.

LPDDR4 8G 512MX16 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR4X

8Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

MT29F1T08EELEEJ4-T-E-TR

Micron Technology Inc.

TLC 1T 128GX8 VBGA DDP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.6V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

パッケージ: -

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FLASH

FLASH - NAND (TLC)

1Tbit

Parallel

-

2.6V ~ 3.6V

0°C ~ 70°C

Surface Mount

132-VBGA

132-VBGA (12x18)

MTFC128GAOALEA-WT

Micron Technology Inc.

EMMC 1T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

MT53E768M32D2ZW-046-AIT-C

Micron Technology Inc.

LPDDR4 24GBIT 32 200/264 TFBGA 2

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 24Gbit
Memory Interface: LVSTL
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR4X

24Gbit

LVSTL

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

MT62F4G32D8DV-023-AUT-C-TR

Micron Technology Inc.

LPDDR5 128GBIT 32 315/315 LFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

MT62F1G64D4AM-031-XT-C

Micron Technology Inc.

LPDDR5 64G 1GX64 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

MT62F768M64D4CZ-023-WT-C-TR

Micron Technology Inc.

LPDDR5 48GBIT 64 561/570 TFBGA 4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

MT53E512M32D1Z42MWC1

Micron Technology Inc.

LPDDR4 16G DIE 512MX32

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Wafer

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR4X

16Gbit

Parallel

-

Surface Mount

Die

Wafer

MT40A512M16TB-062E-R

Micron Technology Inc.

IC DRAM 8GBIT PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13)

パッケージ: -

在庫1,137

DRAM

SDRAM - DDR4

8Gbit

Parallel

1.6 GHz

15ns

19 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13)

MT62F1G64D8CH-031-WT-A-TR

Micron Technology Inc.

IC DRAM 64GBIT 3.2GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: -
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR5

64Gbit

-

3.2 GHz

-

1.05V

-25°C ~ 85°C (TC)

-

MT53E768M64D4HJ-046-AIT-C-TR

Micron Technology Inc.

IC DRAM

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 556-TFBGA
Supplier Device Package: 556-WFBGA (12.4x12.4)

パッケージ: -

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DRAM

SDRAM - Mobile LPDDR4

48Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 95°C (TC)

Surface Mount

556-TFBGA

556-WFBGA (12.4x12.4)