Microsemi Corporation 製品 - トランジスタ - バイポーラ（BJT） - RF

MRF8372R2

Microsemi Corporation

TRANS NPN 16V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 9.5dB
• Power - Max: 2.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

MRF8372R1

Microsemi Corporation

TRANS NPN 16V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 9.5dB
• Power - Max: 2.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

MRF8372GR2

Microsemi Corporation

TRANS NPN 16V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 9.5dB
• Power - Max: 2.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

MRF8372GR1

Microsemi Corporation

TRANS NPN 16V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 9.5dB
• Power - Max: 2.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

MRF8372G

Microsemi Corporation

TRANS NPN 16V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 9.5dB
• Power - Max: 2.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

MRF8372

Microsemi Corporation

TRANS NPN 16V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 9.5dB
• Power - Max: 2.2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

MRF5812R1

Microsemi Corporation

TRANS NPN 15V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

MRF5812G

Microsemi Corporation

TRANS NPN 15V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

MRF5812

Microsemi Corporation

TRANS NPN 15V 200MA SO8

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

MRF559T

Microsemi Corporation

COMM/BIPOLAR TRANSISTOR

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 9.5dB
• Power - Max: 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
• Current - Collector (Ic) (Max): 150mA
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MRF559GT

Microsemi Corporation

COMM/BIPOLAR TRANSISTOR

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 9.5dB
• Power - Max: 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
• Current - Collector (Ic) (Max): 150mA
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MRF559

Microsemi Corporation

TRANS NPN 16V 150MA MACROX

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 9.5dB
• Power - Max: 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
• Current - Collector (Ic) (Max): 150mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Macro-X
• Supplier Device Package: Macro-X

パッケージ: Macro-X

MRF555GT

Microsemi Corporation

RF NPN TRANSISTOR

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 470MHz
• Noise Figure (dB Typ @ f): -
• Gain: 12.5dB
• Power - Max: 3W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
• Current - Collector (Ic) (Max): 500mA
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MRF555G

Microsemi Corporation

RF NPN TRANSISTOR

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 470MHz
• Noise Figure (dB Typ @ f): -
• Gain: 12.5dB
• Power - Max: 3W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
• Current - Collector (Ic) (Max): 500mA
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MRF553T

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 175MHz
• Noise Figure (dB Typ @ f): -
• Gain: 11.5dB
• Power - Max: 3W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
• Current - Collector (Ic) (Max): 500mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Power Macro
• Supplier Device Package: Power Macro

パッケージ: Power Macro

MRF553GT

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 175MHz
• Noise Figure (dB Typ @ f): -
• Gain: 11.5dB
• Power - Max: 3W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
• Current - Collector (Ic) (Max): 500mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Power Macro
• Supplier Device Package: Power Macro

パッケージ: Power Macro