ページ 15 - Microsemi Corporation 製品 - トランジスタ - IGBT - モジュール | Heisener Electronics
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Microsemi Corporation 製品 - トランジスタ - IGBT - モジュール

レコード 527
ページ  15/19
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APTGT100DA60TG
Microsemi Corporation

IGBT 600V 150A 340W SP4

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 340W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 6.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫6,832
Single
600V
150A
340W
1.9V @ 15V, 100A
250µA
6.1nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP4
SP4
APTGT100DA170D1G
Microsemi Corporation

IGBT 1700V 200A 695W D1

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 695W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: 8.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
パッケージ: D1
在庫3,488
Single
1700V
200A
695W
2.4V @ 15V, 100A
3mA
8.5nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D1
D1
APTGT100DA120TG
Microsemi Corporation

IGBT 1200V 140A 480W SP4

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 140A
  • Power - Max: 480W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 7.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫3,760
Single
1200V
140A
480W
2.1V @ 15V, 100A
250µA
7.2nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTGT100DA120D1G
Microsemi Corporation

IGBT 1200V 150A 520W D1

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 520W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: 7nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
パッケージ: D1
在庫3,600
Single
1200V
150A
520W
2.1V @ 15V, 100A
3mA
7nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D1
D1
APTGT100A60TG
Microsemi Corporation

IGBT MODULE TRENCH PH LEG SP4

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 340W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 6.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫6,080
Half Bridge
600V
150A
340W
1.9V @ 15V, 100A
250µA
6.1nF @ 25V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
SP4
SP4
APTGT100A170D1G
Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D1

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 695W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: 8.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
パッケージ: D1
在庫3,680
Half Bridge
1700V
200A
695W
2.4V @ 15V, 100A
3mA
8.5nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D1
D1
APTGT100A120D1G
Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D1

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 520W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: 7nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
パッケージ: D1
在庫3,840
Half Bridge
1200V
150A
520W
2.1V @ 15V, 100A
3mA
7nF @ 25V
Standard
No
-
Chassis Mount
D1
D1
APTGF90TDU60PG
Microsemi Corporation

IGBT MODULE NPT TRPLE DUAL SP6P

  • IGBT Type: NPT
  • Configuration: Triple, Dual - Common Source
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
パッケージ: SP6
在庫5,712
Triple, Dual - Common Source
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTGF90TA60PG
Microsemi Corporation

IGBT MODULE NPT TRPL PHASE SP6P

  • IGBT Type: NPT
  • Configuration: Three Phase
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
パッケージ: SP6
在庫5,488
Three Phase
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
No
-
Chassis Mount
SP6
SP6-P
APTGF90SK60TG
Microsemi Corporation

IGBT 600V 110A 416W SP4

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫3,392
Single
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTGF90SK60T1G
Microsemi Corporation

IGBT 600V 110A 416W SP1

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
パッケージ: SP1
在庫7,952
Single
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-
Chassis Mount
SP1
SP1
APTGF90SK60D1G
Microsemi Corporation

IGBT 600V 130A 445W D1

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 130A
  • Power - Max: 445W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
パッケージ: D1
在庫7,632
Single
600V
130A
445W
2.45V @ 15V, 100A
500µA
4.3nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D1
D1
APTGF90H60TG
Microsemi Corporation

IGBT MODULE NPT FULL BRIDGE SP4

  • IGBT Type: NPT
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫7,392
Full Bridge Inverter
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTGF90DU60TG
Microsemi Corporation

IGBT MODULE NPT DUAL SOURCE SP4

  • IGBT Type: NPT
  • Configuration: Dual, Common Source
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫5,840
Dual, Common Source
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-
Chassis Mount
SP4
SP4
APTGF90DH60TG
Microsemi Corporation

IGBT MODULE NPT ASYM BRIDGE SP4

  • IGBT Type: NPT
  • Configuration: Asymmetrical Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫3,056
Asymmetrical Bridge
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTGF90DA60TG
Microsemi Corporation

IGBT 600V 110A 416W SP4

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫4,832
Single
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTGF90DA60T1G
Microsemi Corporation

IGBT 600V 110A 416W SP1

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
パッケージ: SP1
在庫4,880
Single
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-
Chassis Mount
SP1
SP1
APTGF90DA60D1G
Microsemi Corporation

IGBT 600V 130A 445W D1

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 130A
  • Power - Max: 445W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
パッケージ: D1
在庫4,816
Single
600V
130A
445W
2.45V @ 15V, 100A
500µA
4.3nF @ 25V
Standard
No
-
Chassis Mount
D1
D1
APTGF90A60TG
Microsemi Corporation

IGBT MODULE NPT PHASE LEG SP4

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫7,888
Half Bridge
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot APTGF90A60T1G
Microsemi Corporation

POWER MOD IGBT NPT PHASE LEG SP1

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Power - Max: 416W
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
パッケージ: SP1
在庫27,516
Half Bridge
600V
110A
416W
2.5V @ 15V, 90A
250µA
4.3nF @ 25V
Standard
Yes
-
Chassis Mount
SP1
SP1
APTGF90A60D1G
Microsemi Corporation

IGBT MODULE NPT PHASE LEG D1

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
パッケージ: D1
在庫4,320
Half Bridge
-
-
-
-
-
-
Standard
No
-
Chassis Mount
D1
D1
APTGF75SK60D1G
Microsemi Corporation

IGBT 600V 100A 355W D1

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 355W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
パッケージ: D1
在庫3,552
Single
600V
100A
355W
2.45V @ 15V, 75A
500µA
3.3nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D1
D1
APTGF75DSK120TG
Microsemi Corporation

IGBT MODULE NPT BUCK CHOP SP4

  • IGBT Type: NPT
  • Configuration: Dual, Common Source
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 500W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 5.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫5,104
Dual, Common Source
1200V
100A
500W
3.7V @ 15V, 75A
250µA
5.1nF @ 25V
Standard
Yes
-
Chassis Mount
SP4
SP4
APTGF75DH120TG
Microsemi Corporation

IGBT MODULE NPT ASYM BRIDGE SP4

  • IGBT Type: NPT
  • Configuration: Asymmetrical Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 500W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 5.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫5,296
Asymmetrical Bridge
1200V
100A
500W
3.7V @ 15V, 75A
250µA
5.1nF @ 25V
Standard
Yes
-
Chassis Mount
SP4
SP4
APTGF75DDA120TG
Microsemi Corporation

IGBT MODULE NPT BOOST CHOP SP4

  • IGBT Type: NPT
  • Configuration: Dual, Common Source
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 500W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 5.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫6,432
Dual, Common Source
1200V
100A
500W
3.7V @ 15V, 75A
250µA
5.1nF @ 25V
Standard
Yes
-
Chassis Mount
SP4
SP4
APTGF75DA60D1G
Microsemi Corporation

IGBT 600V 100A 355W D1

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 355W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
パッケージ: D1
在庫3,392
Single
600V
100A
355W
2.45V @ 15V, 75A
500µA
3.3nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D1
D1
APTGF75DA120T1G
Microsemi Corporation

IGBT 1200V 100A 500W SP1

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 500W
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 5.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
パッケージ: SP1
在庫6,736
Single
1200V
100A
500W
3.7V @ 15V, 75A
250µA
5.1nF @ 25V
Standard
Yes
-
Chassis Mount
SP1
SP1
APTGF660U60D4G
Microsemi Corporation

IGBT 600V 860A 2800W D4

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 860A
  • Power - Max: 2800W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 36nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: D4
  • Supplier Device Package: D4
パッケージ: D4
在庫6,080
Single
600V
860A
2800W
2.45V @ 15V, 800A
500µA
36nF @ 25V
Standard
No
-
Chassis Mount
D4
D4