Nexperia USA Inc. 製品

PSMN8R5-60YS,115

Nexperia USA Inc.

MOSFET N-CH 60V 76A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 106W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

パッケージ: SC-100, SOT-669

PMCM4401VNEAZ

Nexperia USA Inc.

MOSFET N-CH 12V WLCSP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-WLCSP (2x2)
• Package / Case: 4-XFBGA, WLCSP

パッケージ: 4-XFBGA, WLCSP

PBSS4230QA

Nexperia USA Inc.

TRANS NPN 30V 2A 3DFN

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 325mW
• Frequency - Transition: 190MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1010D-3

パッケージ: 3-XDFN Exposed Pad

PDTA114EMB,315

Nexperia USA Inc.

TRANS PREBIAS PNP 250MW 3DFN

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 180MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 3-XFDFN
• Supplier Device Package: 3-DFN1006B (0.6x1)

パッケージ: 3-XFDFN

PDTD143EQAZ

Nexperia USA Inc.

TRANS PREBIAS NPN 3DFN

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 210MHz
• Power - Max: 325mW
• Mounting Type: Surface Mount
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1010D-3

パッケージ: 3-XDFN Exposed Pad

PBRP113ZT,215

Nexperia USA Inc.

TRANS PREBIAS PNP 250MW TO236AB

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 300mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 750mV @ 6mA, 600mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

パッケージ: TO-236-3, SC-59, SOT-23-3

PDTA114YT,215

Nexperia USA Inc.

TRANS PREBIAS PNP 250MW TO236AB

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: -
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

パッケージ: TO-236-3, SC-59, SOT-23-3

PZU13BL,315

Nexperia USA Inc.

DIODE ZENER 13V 250MW SOD882

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±5%
• Power - Max: 250mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 10V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006-2

パッケージ: SOD-882

BZX84-C27,235

Nexperia USA Inc.

DIODE ZENER 27V 250MW SOT23

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 250mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 18.9V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

パッケージ: TO-236-3, SC-59, SOT-23-3

BZX585-C3V3,115

Nexperia USA Inc.

DIODE ZENER 3.3V 300MW SOD523

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

パッケージ: SC-79, SOD-523

BZV55-C22,115

Nexperia USA Inc.

DIODE ZENER 22V 500MW SOD80C

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 15.4V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80C

パッケージ: DO-213AC, MINI-MELF, SOD-80

74LVC1G123GD,125

Nexperia USA Inc.

IC MULTIVIBRATOR MONO 8XSON

• Logic Type: Monostable
• Independent Circuits: 1
• Schmitt Trigger Input: No
• Propagation Delay: 5.3ns
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-XFDFN
• Supplier Device Package: 8-XSON, SOT996-2 (2x3)

パッケージ: 8-XFDFN

HEF4011BT,653

Nexperia USA Inc.

IC GATE NAND 4CH 2-INP 14-SO

• Logic Type: NAND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 3 V ~ 15 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 3.4mA, 3.4mA
• Logic Level - Low: 1.5 V ~ 4 V
• Logic Level - High: 3.5 V ~ 11 V
• Max Propagation Delay @ V, Max CL: 35ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

パッケージ: 14-SOIC (0.154", 3.90mm Width)

74HC4017PW-Q100J

Nexperia USA Inc.

IC JOHNSON DECADE CNTR 16TSSOP

• Logic Type: Counter, Decade
• Direction: -
• Number of Elements: 1
• Number of Bits per Element: 10
• Reset: Asynchronous
• Timing: -
• Count Rate: -
• Trigger Type: -
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

74ABT162244DGG,112

Nexperia USA Inc.

IC BUFF DVR TRI-ST 16BIT 48TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 12mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 48-TSSOP

パッケージ: 48-TFSOP (0.240", 6.10mm Width)

74AVCH16245DGG,112

Nexperia USA Inc.

IC 16BIT TXRX W/DIR PIN 48-TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 12mA, 12mA
• Voltage - Supply: 1.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 48-TSSOP

パッケージ: 48-TFSOP (0.240", 6.10mm Width)

74HCT4067PW-Q100J

Nexperia USA Inc.

IC MUX/DEMUX 1X16 24TSSOP

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 16:1
• Number of Circuits: 1
• On-State Resistance (Max): 120 Ohm
• Channel-to-Channel Matching (ΔRon): 6 Ohm
• Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 65ns, 60ns
• -3db Bandwidth: 100MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 800nA
• Crosstalk: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 24-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 24-TSSOP

パッケージ: 24-TSSOP (0.173", 4.40mm Width)

74HCT4051BQ,115

Nexperia USA Inc.

IC MUX/DEMUX 8X1 16DHVQFN

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 120 Ohm
• Channel-to-Channel Matching (ΔRon): 6 Ohm
• Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
• Voltage - Supply, Dual (V±): ±1 V ~ 5 V
• Switch Time (Ton, Toff) (Max): 39ns, 32ns
• -3db Bandwidth: 180MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 400nA
• Crosstalk: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-VFQFN Exposed Pad
• Supplier Device Package: 16-DHVQFN (2.5x3.5)

パッケージ: 16-VFQFN Exposed Pad

HEF4051BTT,118

Nexperia USA Inc.

IC MUX/DEMUX 8X1 16TSSOP

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 155 Ohm
• Channel-to-Channel Matching (ΔRon): 5 Ohm
• Voltage - Supply, Single (V+): 3 V ~ 15 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): -
• -3db Bandwidth: 70MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 7.5pF
• Current - Leakage (IS(off)) (Max): 200nA
• Crosstalk: -50dB @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

PESD15VL1BAZ

Nexperia USA Inc.

PESD15VL1BA/SOD323/SOD2

• Type: -
• Unidirectional Channels: -
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): -
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: -
• Applications: -
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

74AUP1T08GXH

Nexperia USA Inc.

IC GATE AND SCHMITT 1CH 5X2SON

• Logic Type: AND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: Schmitt Trigger
• Voltage - Supply: 2.3 V ~ 3.6 V
• Current - Quiescent (Max): 1.2µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.1 V ~ 0.44 V
• Logic Level - High: 1.9 V ~ 2.6 V
• Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 5-X2SON (0.80x0.80)
• Package / Case: 5-XFDFN Exposed Pad

パッケージ: 5-XFDFN Exposed Pad

PMPB07R3ENX

Nexperia USA Inc.

PMPB07R3EN/SOT1220-2/DFN2020M-

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN2020M-6
• Package / Case: 6-UDFN Exposed Pad

パッケージ: -

BZT52-B6V2-QX

Nexperia USA Inc.

BZT52-B6V2-Q/SOD123/SOD2

• Voltage - Zener (Nom) (Vz): 6.2 V
• Tolerance: ±2%
• Power - Max: 590 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 3 µA @ 4 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: -

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BZX84W-C43F

Nexperia USA Inc.

DIODE ZENER 43V 275MW SOT323

• Voltage - Zener (Nom) (Vz): 43 V
• Tolerance: ±5%
• Power - Max: 275 mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

パッケージ: -

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PUMD9-ZLX

Nexperia USA Inc.

TRANS PREBIAS

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 230MHz, 180MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

パッケージ: -

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PDZ5-6B-QF

Nexperia USA Inc.

PDZ5.6B-Q/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 5.6 V
• Tolerance: ±2%
• Power - Max: 400 mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

パッケージ: -

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BAT54S-QR

Nexperia USA Inc.

DIODE ARR SCHOTT 30V TO236AB

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

パッケージ: -

BZX384-A24X

Nexperia USA Inc.

BZX384-A24/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±1%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

パッケージ: -

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