Nexperia USA Inc. 製品

BSH203,215

Nexperia USA Inc.

MOSFET P-CH 30V 470MA SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 680mV @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 24V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 417mW (Ta)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 280mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB (SOT23)
• Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

PBSS5250X,135

Nexperia USA Inc.

TRANS PNP 50V 2A SOT89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

パッケージ: TO-243AA

BC856BW,135

Nexperia USA Inc.

TRANS PNP 65V 0.1A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 65V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

パッケージ: SC-70, SOT-323

BC846BPN/DG/B3X

Nexperia USA Inc.

TRANS GEN PURPOSE SC-88

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

BZX79-B68,143

Nexperia USA Inc.

DIODE ZENER 68V 400MW ALF2

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±2%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 240 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 47.6V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2

パッケージ: DO-204AH, DO-35, Axial

BZX384-B56,115

Nexperia USA Inc.

DIODE ZENER 56V 300MW SOD323

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 39.2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

パッケージ: SC-76, SOD-323

BZV49-C15,115

Nexperia USA Inc.

DIODE ZENER 15V 1W SOT89

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 10.5V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

パッケージ: TO-243AA

PMEG6010EP,115

Nexperia USA Inc.

DIODE SCHOTTKY 60V 1A SOD128

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 60µA @ 60V
• Capacitance @ Vr, F: 120pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: CFP5
• Operating Temperature - Junction: 150°C (Max)

パッケージ: SOD-128

BAS21W,115

Nexperia USA Inc.

DIODE GEN PURP 250V 225MA SOT323

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 250V
• Current - Average Rectified (Io): 225mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3
• Operating Temperature - Junction: 150°C (Max)

パッケージ: SC-70, SOT-323

BAT54CV,115

Nexperia USA Inc.

DIODE ARRAY SCHOTTKY 30V SOT666

• Diode Configuration: 2 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-666

パッケージ: SOT-563, SOT-666

74AHC157BQ-Q100X

Nexperia USA Inc.

IC MUX QUAD 2INPUT 16-DHVQFN

• Type: Multiplexer
• Circuit: 4 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-VFQFN Exposed Pad
• Supplier Device Package: 16-DQFN

パッケージ: 16-VFQFN Exposed Pad

74LVC3G04GS,115

Nexperia USA Inc.

IC TRIPLE INVERTER 8XSON

• Logic Type: Inverter
• Number of Circuits: 3
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 3.2ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-XSON, SOT1203 (1.35x1)
• Package / Case: 8-XFDFN

パッケージ: 8-XFDFN

74HCT2G00GD,125

Nexperia USA Inc.

IC GATE NAND 2CH 2-INP 8-XSON

• Logic Type: NAND Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 20µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 12ns @ 4.5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-XSON, SOT996-2 (2x3)
• Package / Case: 8-XFDFN

パッケージ: 8-XFDFN

74AUP2G132GD,125

Nexperia USA Inc.

IC GATE NAND 2CH 2-INP 8-XSON

• Logic Type: NAND Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: Schmitt Trigger
• Voltage - Supply: 0.8 V ~ 3.6 V
• Current - Quiescent (Max): 0.5µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.1 V ~ 0.88 V
• Logic Level - High: 0.6 V ~ 2.29 V
• Max Propagation Delay @ V, Max CL: 7.8ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-XSON, SOT996-2 (2x3)
• Package / Case: 8-XFDFN

パッケージ: 8-XFDFN

74HC00DB,112

Nexperia USA Inc.

IC GATE NAND 4CH 2-INP 14-SSOP

• Logic Type: NAND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 40µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 7ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SSOP
• Package / Case: 14-SSOP (0.209", 5.30mm Width)

パッケージ: 14-SSOP (0.209", 5.30mm Width)

74AHCT86PW,112

Nexperia USA Inc.

IC GATE XOR 4CH 2-INP 14-TSSOP

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

パッケージ: 14-TSSOP (0.173", 4.40mm Width)

74AXP1G14GNH

Nexperia USA Inc.

IC GATE INVERTER 6XSON

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 0.7 V ~ 2.75 V
• Current - Quiescent (Max): 0.6µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3.2ns @ 2.5V, 5pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-XSON, SOT1115 (0.9x1)
• Package / Case: 6-XFDFN

パッケージ: 6-XFDFN

74LVT162374DGG,512

Nexperia USA Inc.

IC D-TYPE POS TRG DUAL 48TSSOP

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 2
• Number of Bits per Element: 8
• Clock Frequency: 150MHz
• Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 12mA, 12mA
• Voltage - Supply: 2.7 V ~ 3.6 V
• Current - Quiescent (Iq): 120µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)

パッケージ: 48-TFSOP (0.240", 6.10mm Width)

74LVC377D,112

Nexperia USA Inc.

IC D-TYPE POS TRG SNGL 20SOIC

• Function: Standard
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 330MHz
• Max Propagation Delay @ V, Max CL: 7.6ns @ 3.3V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Current - Quiescent (Iq): 10µA
• Input Capacitance: 5pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)

パッケージ: 20-SOIC (0.295", 7.50mm Width)

74HC4060BQ-Q100,11

Nexperia USA Inc.

IC BINARY RIPPLE COUNT 16DHVQFN

• Logic Type: Binary Counter
• Direction: Up
• Number of Elements: 1
• Number of Bits per Element: 14
• Reset: Asynchronous
• Timing: -
• Count Rate: 95MHz
• Trigger Type: Negative Edge
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-VFQFN Exposed Pad
• Supplier Device Package: 16-DHVQFN (2.5x3.5)

パッケージ: 16-VFQFN Exposed Pad

74AUP2G241GN,115

Nexperia USA Inc.

IC BUFFER/LINEDVR DUAL 8-XSON

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-XFDFN
• Supplier Device Package: 8-XSON, SOT1116 (1.2x1)

パッケージ: 8-XFDFN

74AUP1G17GM,132

Nexperia USA Inc.

IC BUFF SCHMT TRIG LOW PWR 6XSON

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: Schmitt Trigger
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: 6-XSON, SOT886 (1.45x1)

パッケージ: 6-XFDFN

BUK9Y30-75B-C2-115

Nexperia USA Inc.

MOSFET N-CH 75V 34A LFPAK56

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75 V
• Current - Continuous Drain (Id) @ 25°C: 34A
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 28mOhm @ 15A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

パッケージ: -

Request a Quote

BC857CQB-QZ

Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 340 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1110D-3

パッケージ: -

Request a Quote

PMEG3010EJ-QX

Nexperia USA Inc.

PMEG3010EJ-Q/SOD323F/SOD323F

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F
• Operating Temperature - Junction: -

パッケージ: -

BZX84W-B33-QF

Nexperia USA Inc.

BZX84W-B33-Q/SOT323/SC-70

• Voltage - Zener (Nom) (Vz): 33 V
• Tolerance: ±2.12%
• Power - Max: 275 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

パッケージ: -

Request a Quote

BAS21QB-QZ

Nexperia USA Inc.

DIODE GP 200V 250MA DFN1110D-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 200 V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1110D-3
• Operating Temperature - Junction: 150°C

パッケージ: -

PDTA114YQB-QZ

Nexperia USA Inc.

TRANS PREBIAS PNP 50V 0.1A 3DFN

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 180 MHz
• Power - Max: 340 mW
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1110D-3

パッケージ: -