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NXP 製品 - トランジスタ - FET、MOSFET - RF

レコード 1,171
ページ  3/42
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部品番号
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パッケージ
在庫
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
A3G26H502W17SR3
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 13.1dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 370 mA
  • Power - Output: 80W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780-4S2S
  • Supplier Device Package: NI-780-4S2S
パッケージ: -
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2.496GHz ~ 2.69GHz
13.1dB
48 V
-
-
370 mA
80W
125 V
NI-780-4S2S
NI-780-4S2S
A2T27S020GNR1
NXP

RF MOSFET LDMOS 28V TO270-2

  • Transistor Type: LDMOS
  • Frequency: 400MHz ~ 2.7GHz
  • Gain: 21dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 185 mA
  • Power - Output: 20W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270BA
  • Supplier Device Package: TO-270-2 GULL
パッケージ: -
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400MHz ~ 2.7GHz
21dB
28 V
10µA
-
185 mA
20W
65 V
TO-270BA
TO-270-2 GULL
MMRF5018HS-450
NXP

RF MOSFET NI400

  • Transistor Type: -
  • Frequency: 1MHz ~ 2.7GHz
  • Gain: 17.3dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 125W
  • Voltage - Rated: 125 V
  • Package / Case: NI-400S-2SA
  • Supplier Device Package: NI-400S-2SA
パッケージ: -
Request a Quote
1MHz ~ 2.7GHz
17.3dB
-
-
-
-
125W
125 V
NI-400S-2SA
NI-400S-2SA
A3I25D080GNR1
NXP

RF MOSFET LDMOS 28V TO270-17

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.69GHz
  • Gain: 29.2dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 175 mA
  • Power - Output: 8.3W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270-17 Variant, Gull Wing
  • Supplier Device Package: TO-270WBG-17
パッケージ: -
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2.3GHz ~ 2.69GHz
29.2dB
28 V
10µA
-
175 mA
8.3W
65 V
TO-270-17 Variant, Gull Wing
TO-270WBG-17
A2G35S200-01SR3
NXP

RF MOSFET GAN HEMT 48V NI400

  • Transistor Type: GaN HEMT
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 16.1dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 291 mA
  • Power - Output: 180W
  • Voltage - Rated: 125 V
  • Package / Case: NI-400S-2S
  • Supplier Device Package: NI-400S-2S
パッケージ: -
在庫231
3.4GHz ~ 3.6GHz
16.1dB
48 V
-
-
291 mA
180W
125 V
NI-400S-2S
NI-400S-2S
A5G38H045N-3700
NXP

RF MOSFET 6DFN

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 5W
  • Voltage - Rated: -
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
パッケージ: -
Request a Quote
-
-
-
-
-
-
5W
-
6-LDFN Exposed Pad
6-PDFN (7x6.5)
A3G22H400-04SR3
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
AFT27S012NT1
NXP

RF MOSFET LDMOS 28V PLD-1.5W

  • Transistor Type: LDMOS
  • Frequency: 728MHz ~ 2.7GHz
  • Gain: 20.9dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 90 mA
  • Power - Output: 13W
  • Voltage - Rated: 65 V
  • Package / Case: PLD-1.5W
  • Supplier Device Package: PLD-1.5W
パッケージ: -
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728MHz ~ 2.7GHz
20.9dB
28 V
10µA
-
90 mA
13W
65 V
PLD-1.5W
PLD-1.5W
MMRF5018HSR5
NXP

RF MOSFET GAN NI400

  • Transistor Type: GaN
  • Frequency: 1MHz ~ 2.7GHz
  • Gain: 17.3dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 125W
  • Voltage - Rated: 125 V
  • Package / Case: NI-400S-2SA
  • Supplier Device Package: NI-400S-2SA
パッケージ: -
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1MHz ~ 2.7GHz
17.3dB
-
-
-
-
125W
125 V
NI-400S-2SA
NI-400S-2SA
MHT2025NR1
NXP

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A5G23H110NT4
NXP

RF MOSFET 48V 6DFN

  • Transistor Type: -
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 13.8W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
パッケージ: -
Request a Quote
2.3GHz ~ 2.4GHz
17.9dB
48 V
-
-
60 mA
13.8W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
A3I25D080NR1
NXP

RF MOSFET LDMOS 28V TO270-17

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.69GHz
  • Gain: 29.2dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 175 mA
  • Power - Output: 8.3W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270-17 Variant, Flat Leads
  • Supplier Device Package: TO-270WB-17
パッケージ: -
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2.3GHz ~ 2.69GHz
29.2dB
28 V
10µA
-
175 mA
8.3W
65 V
TO-270-17 Variant, Flat Leads
TO-270WB-17
A3V07H600-42NR6
NXP

RF MOSFET LDMOS 48V OM1230-6

  • Transistor Type: LDMOS
  • Frequency: 616MHz ~ 870MHz
  • Gain: 16.9dB
  • Voltage - Test: 48 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900 mA
  • Power - Output: 112W
  • Voltage - Rated: 105 V
  • Package / Case: OM-1230-6L
  • Supplier Device Package: OM-1230-6L
パッケージ: -
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616MHz ~ 870MHz
16.9dB
48 V
10µA
-
900 mA
112W
105 V
OM-1230-6L
OM-1230-6L
A2G35S160-01SR3
NXP

RF MOSFET GAN 48V NI400

  • Transistor Type: GaN
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15.7dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 190 mA
  • Power - Output: 51dBm
  • Voltage - Rated: 125 V
  • Package / Case: NI-400S-2S
  • Supplier Device Package: NI-400S-2S
パッケージ: -
在庫516
3.4GHz ~ 3.6GHz
15.7dB
48 V
-
-
190 mA
51dBm
125 V
NI-400S-2S
NI-400S-2S
A2T18S165-12SR3
NXP

RF MOSFET LDMOS 28V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.995GHz
  • Gain: 18dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 800 mA
  • Power - Output: 148W
  • Voltage - Rated: 65 V
  • Package / Case: NI-780-2S2L
  • Supplier Device Package: NI-780-2S2L
パッケージ: -
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1.805GHz ~ 1.995GHz
18dB
28 V
10µA
-
800 mA
148W
65 V
NI-780-2S2L
NI-780-2S2L
AFM906NT1
NXP

RF MOSFET LDMOS 10.8V 16DFN

  • Transistor Type: LDMOS
  • Frequency: 136MHz ~ 941MHz
  • Gain: -
  • Voltage - Test: 10.8 V
  • Current Rating: 2µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 6.8W
  • Voltage - Rated: 30 V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-DFN (4x6)
パッケージ: -
在庫2,826
136MHz ~ 941MHz
-
10.8 V
2µA
-
100 mA
6.8W
30 V
16-VDFN Exposed Pad
16-DFN (4x6)
MHTG1200HSR3
NXP

RF MOSFET GAN NI780

  • Transistor Type: GaN
  • Frequency: 2.4GHz ~ 2.5GHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 300W
  • Voltage - Rated: 50 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
パッケージ: -
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2.4GHz ~ 2.5GHz
-
-
-
-
-
300W
50 V
NI-780S-4L
NI-780S-4L
A2T21H360-23NR6
NXP

RF MOSFET LDMOS 28V OM1230-42

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 16.8dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 373W
  • Voltage - Rated: 65 V
  • Package / Case: OM-1230-4L2L
  • Supplier Device Package: OM-1230-4L2L
パッケージ: -
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2.11GHz ~ 2.2GHz
16.8dB
28 V
10µA
-
500 mA
373W
65 V
OM-1230-4L2L
OM-1230-4L2L
A2T21S260W12NR3
NXP

RF MOSFET LDMOS 28V OM880X-2L2L

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 17.9dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6 A
  • Power - Output: 218W
  • Voltage - Rated: 65 V
  • Package / Case: OM-880X-2L2L
  • Supplier Device Package: OM-880X-2L2L
パッケージ: -
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2.11GHz ~ 2.2GHz
17.9dB
28 V
10µA
-
1.6 A
218W
65 V
OM-880X-2L2L
OM-880X-2L2L
A2T14H450-23NR6
NXP

RF MOSFET LDMOS 31V OM1230-42

  • Transistor Type: LDMOS
  • Frequency: 1.452GHz ~ 1.511GHz
  • Gain: 18.8dB
  • Voltage - Test: 31 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1 A
  • Power - Output: -
  • Voltage - Rated: 65 V
  • Package / Case: OM-1230-4L2S
  • Supplier Device Package: OM-1230-4L2S
パッケージ: -
Request a Quote
1.452GHz ~ 1.511GHz
18.8dB
31 V
10µA
-
1 A
-
65 V
OM-1230-4L2S
OM-1230-4L2S
AFM907NT1
NXP

RF MOSFET LDMOS 10.8V 16DFN

  • Transistor Type: LDMOS
  • Frequency: 136MHz ~ 941MHz
  • Gain: -
  • Voltage - Test: 10.8 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 8.4W
  • Voltage - Rated: 30 V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-DFN (4x6)
パッケージ: -
Request a Quote
136MHz ~ 941MHz
-
10.8 V
10µA
-
100 mA
8.4W
30 V
16-VDFN Exposed Pad
16-DFN (4x6)
MRF101AN
NXP

RF MOSFET LDMOS 50V TO220-3

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 250MHz
  • Gain: 21.1dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 115W
  • Voltage - Rated: 133 V
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
パッケージ: -
Request a Quote
1.8MHz ~ 250MHz
21.1dB
50 V
10µA
-
100 mA
115W
133 V
TO-220-3
TO-220-3
MRF101BN
NXP

RF MOSFET LDMOS 50V TO220-3

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 250MHz
  • Gain: 21.1dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 115W
  • Voltage - Rated: 133 V
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
パッケージ: -
在庫510
1.8MHz ~ 250MHz
21.1dB
50 V
10µA
-
100 mA
115W
133 V
TO-220-3
TO-220-3
A5G38H045NT4
NXP

RF MOSFET DFN

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
MRF7S24250N-3STG
NXP

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
A3T19H455W23SR6
NXP

RF MOSFET LDMOS 30V ACP1230S-4

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 16.4dB
  • Voltage - Test: 30 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 540 mA
  • Power - Output: 81W
  • Voltage - Rated: 65 V
  • Package / Case: ACP-1230S-4L2S
  • Supplier Device Package: ACP-1230S-4L2S
パッケージ: -
Request a Quote
1.93GHz ~ 1.99GHz
16.4dB
30 V
10µA
-
540 mA
81W
65 V
ACP-1230S-4L2S
ACP-1230S-4L2S
A3G23H500W17SR3
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 14.3dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 80W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780-4S2S
  • Supplier Device Package: NI-780-4S2S
パッケージ: -
Request a Quote
2.3GHz ~ 2.4GHz
14.3dB
48 V
-
-
300 mA
80W
125 V
NI-780-4S2S
NI-780-4S2S
A3G26D055N-1805
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 100MHz ~ 2.69GHz
  • Gain: 13.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 8W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
パッケージ: -
在庫9
100MHz ~ 2.69GHz
13.9dB
48 V
-
-
40 mA
8W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)