ページ 2 - Renesas Electronics America 製品 - トランジスタ - FET、MOSFET - シングル | Heisener Electronics
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Renesas Electronics America 製品 - トランジスタ - FET、MOSFET - シングル

レコード 341
ページ  2/13
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在庫
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
UPA2765T1A-E2-AY
Renesas Electronics America

MOSFET N-CH 30V 100A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6550pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 32A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HVSON (5.4x5.15)
  • Package / Case: 8-PowerVDFN
パッケージ: 8-PowerVDFN
在庫6,032
MOSFET (Metal Oxide)
30V
100A (Ta)
4.5V, 10V
-
152nC @ 10V
6550pF @ 10V
±20V
-
1.5W (Ta), 83W (Tc)
2.9 mOhm @ 32A, 4.5V
150°C (TJ)
Surface Mount
8-HVSON (5.4x5.15)
8-PowerVDFN
hot RJK1052DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V 20A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4160pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
パッケージ: SC-100, SOT-669
在庫18,720
MOSFET (Metal Oxide)
100V
20A (Ta)
4.5V, 10V
-
29nC @ 4.5V
4160pF @ 10V
±20V
-
55W (Tc)
20 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot RJK0652DPB-00#J5
Renesas Electronics America

MOSFET N-CH 60V 35A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
パッケージ: SC-100, SOT-669
在庫6,256
MOSFET (Metal Oxide)
60V
35A (Ta)
4.5V, 10V
-
29nC @ 4.5V
4100pF @ 10V
±20V
-
55W (Tc)
7 mOhm @ 17.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot UPA2739T1A-E2-AY
Renesas Electronics America

MOSFET P-CH 30V 85A 8-SON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6050pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 23A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HVSON (5.4x5.15)
  • Package / Case: 8-PowerVDFN
パッケージ: 8-PowerVDFN
在庫6,128
MOSFET (Metal Oxide)
30V
85A (Ta)
4.5V, 10V
-
153nC @ 10V
6050pF @ 10V
±20V
-
1.5W (Ta)
5.7 mOhm @ 23A, 4.5V
150°C (TJ)
Surface Mount
8-HVSON (5.4x5.15)
8-PowerVDFN
N0604N-S19-AY
Renesas Electronics America

MOSFET N-CH 60V 82A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 41A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Isolated Tab
  • Package / Case: TO-220-3 Isolated Tab
パッケージ: TO-220-3 Isolated Tab
在庫6,864
MOSFET (Metal Oxide)
60V
82A (Ta)
10V
-
75nC @ 10V
4150pF @ 25V
±20V
-
1.5W (Ta), 156W (Tc)
6.5 mOhm @ 41A, 10V
150°C (TJ)
Through Hole
TO-220 Isolated Tab
TO-220-3 Isolated Tab
RJK0346DPA-01#J0B
Renesas Electronics America

MOSFET N-CH 30V 65A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerWDFN
パッケージ: 8-PowerWDFN
在庫4,560
MOSFET (Metal Oxide)
30V
65A (Ta)
4.5V, 10V
-
49nC @ 10V
7650pF @ 10V
±20V
-
65W (Tc)
1.8 mOhm @ 25A, 10V
150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerWDFN
hot RJK0328DPB-01#J0
Renesas Electronics America

MOSFET N-CH 30V 60A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6380pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
パッケージ: SC-100, SOT-669
在庫6,432
MOSFET (Metal Oxide)
30V
60A (Ta)
4.5V, 10V
2.5V @ 1mA
42nC @ 4.5V
6380pF @ 10V
±20V
-
65W (Tc)
2.1 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
N0434N-S23-AY
Renesas Electronics America

MOSFET N-CH 40V 100A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA
在庫7,088
MOSFET (Metal Oxide)
40V
100A (Ta)
10V
-
100nC @ 10V
5550pF @ 25V
±20V
-
1.5W (Ta), 119W (Tc)
3.7 mOhm @ 50A, 10V
150°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
RJK0393DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 30V 40A 2WPACK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
パッケージ: 8-PowerWDFN
在庫5,312
MOSFET (Metal Oxide)
30V
40A (Ta)
4.5V, 10V
-
21nC @ 4.5V
3270pF @ 10V
±20V
-
40W (Tc)
4.3 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
hot RJK03M2DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 30V 45A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-WFDFN Exposed Pad
パッケージ: 8-WFDFN Exposed Pad
在庫28,740
MOSFET (Metal Oxide)
30V
45A (Ta)
4.5V, 10V
-
21.2nC @ 4.5V
3850pF @ 10V
±20V
-
40W (Tc)
2.8 mOhm @ 22.5A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-WFDFN Exposed Pad
RJK03M3DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 30V 40A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3010pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-WFDFN Exposed Pad
パッケージ: 8-WFDFN Exposed Pad
在庫2,240
MOSFET (Metal Oxide)
30V
40A (Ta)
4.5V, 10V
-
15.7nC @ 4.5V
3010pF @ 10V
±20V
-
35W (Tc)
3.9 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-WFDFN Exposed Pad
hot RJK0305DPB-02#J0
Renesas Electronics America

MOSFET N-CH 30V 30A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
  • Vgs (Max): +16V, -12V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
パッケージ: SC-100, SOT-669
在庫2,000
MOSFET (Metal Oxide)
30V
30A (Ta)
4.5V, 10V
-
8nC @ 4.5V
1250pF @ 10V
+16V, -12V
-
-
8 mOhm @ 15A, 10V
-
Surface Mount
LFPAK
SC-100, SOT-669
NP35N04YUG-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 35A 8HSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 17.5A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSON
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
パッケージ: 8-SMD, Flat Lead Exposed Pad
在庫5,680
MOSFET (Metal Oxide)
40V
35A (Tc)
10V
4V @ 250µA
54nC @ 10V
2850pF @ 25V
±20V
-
1W (Ta), 77W (Tc)
10 mOhm @ 17.5A, 10V
175°C (TJ)
Surface Mount
8-HSON
8-SMD, Flat Lead Exposed Pad
hot NP36P04SDG-E1-AY
Renesas Electronics America

MOSFET P-CH 40V 36A TO-252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 18A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫167,316
MOSFET (Metal Oxide)
40V
36A (Tc)
4.5V, 10V
2.5V @ 250µA
55nC @ 10V
2800pF @ 10V
±20V
-
1.2W (Ta), 56W (Tc)
17 mOhm @ 18A, 10V
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NP52N055SUG-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 52A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫120,012
MOSFET (Metal Oxide)
55V
52A (Tc)
10V
4V @ 250µA
57nC @ 10V
3200pF @ 25V
±20V
-
1.2W (Ta), 56W (Tc)
14 mOhm @ 26A, 10V
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NP34N055SLE-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 34A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 17A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫120,012
MOSFET (Metal Oxide)
55V
34A (Ta)
4.5V, 10V
2.5V @ 250µA
72nC @ 5V
3000pF @ 25V
±20V
-
1.2W (Ta), 88W (Tc)
18 mOhm @ 17A, 10V
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPak (2 Leads + Tab), SC-63
RJK03M4DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 30V 35A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-WFDFN Exposed Pad
パッケージ: 8-WFDFN Exposed Pad
在庫5,760
MOSFET (Metal Oxide)
30V
35A (Ta)
4.5V, 10V
-
12nC @ 4.5V
2170pF @ 10V
±20V
-
30W (Tc)
4.6 mOhm @ 17.5A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-WFDFN Exposed Pad
hot RJK0330DPB-01#J0
Renesas Electronics America

MOSFET N-CH 30V 45A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
パッケージ: SC-100, SOT-669
在庫30,168
MOSFET (Metal Oxide)
30V
45A (Ta)
4.5V, 10V
-
27nC @ 4.5V
4300pF @ 10V
±20V
-
55W (Tc)
2.7 mOhm @ 22.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot RJK1051DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V 15A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
パッケージ: SC-100, SOT-669
在庫58,464
MOSFET (Metal Oxide)
100V
15A (Ta)
4.5V, 10V
-
15nC @ 4.5V
2060pF @ 10V
±20V
-
45W (Tc)
39 mOhm @ 7.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK0851DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 20A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
パッケージ: SC-100, SOT-669
在庫3,536
MOSFET (Metal Oxide)
80V
20A (Ta)
4.5V, 10V
2.5V @ 1mA
14nC @ 4.5V
2050pF @ 10V
±20V
-
45W (Tc)
23 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot RJK0451DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V 35A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
パッケージ: SC-100, SOT-669
在庫4,752
MOSFET (Metal Oxide)
40V
35A (Ta)
4.5V, 10V
-
14nC @ 4.5V
2010pF @ 10V
±20V
-
45W (Tc)
7 mOhm @ 17.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot NP32N055SLE-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 32A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 16A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫196,860
MOSFET (Metal Oxide)
55V
32A (Tc)
4.5V, 10V
2.5V @ 250µA
41nC @ 5V
2000pF @ 25V
±20V
-
1.2W (Ta), 66W (Tc)
24 mOhm @ 16A, 10V
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NP22N055SHE-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 22A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 11A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫120,012
MOSFET (Metal Oxide)
55V
22A (Ta)
10V
4V @ 250µA
18nC @ 10V
890pF @ 25V
±20V
-
1.2W (Ta), 45W (Tc)
39 mOhm @ 11A, 10V
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPak (2 Leads + Tab), SC-63
RJK0349DSP-00#J0
Renesas Electronics America

MOSFET N-CH 30V 20A 8-SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫3,248
MOSFET (Metal Oxide)
30V
20A (Ta)
4.5V, 10V
-
25nC @ 4.5V
3850pF @ 10V
±20V
-
2.5W (Ta)
3.8 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RJK03M5DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 30V 30A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-WFDFN Exposed Pad
パッケージ: 8-WFDFN Exposed Pad
在庫6,768
MOSFET (Metal Oxide)
30V
30A (Ta)
4.5V, 10V
-
10.4nC @ 4.5V
1890pF @ 10V
±20V
-
30W (Tc)
6.5 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-WFDFN Exposed Pad
hot RJK0332DPB-01#J0
Renesas Electronics America

MOSFET N-CH 30V 35A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
パッケージ: SC-100, SOT-669
在庫12,696
MOSFET (Metal Oxide)
30V
35A (Ta)
4.5V, 10V
2.5V @ 1mA
14nC @ 4.5V
2180pF @ 10V
±20V
-
45W (Tc)
4.7 mOhm @ 17.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
UPA2812T1L-E1-AT
Renesas Electronics America

MOSFET P-CH 30V 30A 8HVSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3740pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HVSON (3x3.3)
  • Package / Case: 8-PowerVDFN
パッケージ: 8-PowerVDFN
在庫7,280
MOSFET (Metal Oxide)
30V
30A (Tc)
4.5V, 10V
-
100nC @ 10V
3740pF @ 10V
±20V
-
1.5W (Ta), 52W (Tc)
4.8 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
8-HVSON (3x3.3)
8-PowerVDFN
UPA2822T1L-E1-AT
Renesas Electronics America

MOSFET N-CH 30V 34A 8HVSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 34A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN
パッケージ: 8-PowerWDFN
在庫3,472
MOSFET (Metal Oxide)
30V
34A (Tc)
4.5V, 10V
-
83nC @ 10V
4660pF @ 10V
±20V
-
1.5W (Ta)
2.6 mOhm @ 34A, 10V
150°C (TJ)
Surface Mount
8-HWSON (3.3x3.3)
8-PowerWDFN