ページ 4 - Renesas Electronics America 製品 - トランジスタ - IGBT - シングル

部品番号	メーカ	説明	パッケージ	在庫	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
RJP4301APP-M0#T2	Renesas Electronics America	IGBT 430V TO200FL IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A Power - Max: 30W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 50ns/100ns Test Condition: 300V, 200A, 30 Ohm, 26V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	パッケージ: TO-220-3 Full Pack	在庫2,016	430V	-	200A	10V @ 26V, 200A	30W	-	Standard	-	50ns/100ns	300V, 200A, 30 Ohm, 26V	-	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FL
RJH65D27BDPQ-A0#T0	Renesas Electronics America	IGBT 650V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,512	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RJH60D1DPP-E0#T2	Renesas Electronics America	IGBT 600V 10A IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: 30W Switching Energy: 100µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 30ns/42ns Test Condition: 300V, 10A, 5 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	パッケージ: TO-220-3 Full Pack	在庫5,792	600V	20A	-	2.5V @ 15V, 10A	30W	100µJ (on), 130µJ (off)	Standard	13nC	30ns/42ns	300V, 10A, 5 Ohm, 15V	70ns	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FP
RJH60A83RDPD-A0#J2	Renesas Electronics America	IGBT 600V 10A IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A Power - Max: 51W Switching Energy: 230µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 19.7nC Td (on/off) @ 25°C: 31ns/54ns Test Condition: 300V, 10A, 5 Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫2,512	600V	20A	-	2.6V @ 15V, 10A	51W	230µJ (on), 160µJ (off)	Standard	19.7nC	31ns/54ns	300V, 10A, 5 Ohm, 15V	130ns	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252
RJH60A81RDPD-A0#J2	Renesas Electronics America	IGBT 600V 5A IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A Power - Max: 29.4W Switching Energy: 130µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 11nC Td (on/off) @ 25°C: 30ns/40ns Test Condition: 300V, 5A, 5 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫6,368	600V	10A	-	2.4V @ 15V, 5A	29.4W	130µJ (on), 60µJ (off)	Standard	11nC	30ns/40ns	300V, 5A, 5 Ohm, 15V	100ns	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252