STMicroelectronics 製品 - ダイオード - 整流器 - シングル | Heisener Electronics
連絡先
SalesDept@heisener.com +86-755-83210559 ext. 807
ログイン/登録
Language Translation

* Please refer to the English Version as our Official Version.

BOM
カート 0

STMicroelectronics 製品 - ダイオード - 整流器 - シングル

レコード 937
ページ  1/34
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
STPS10M120SF
STMicroelectronics

DIODE SCHOTTKY 120V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 120 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -
パッケージ: -
在庫134,394
120 V
10A
820 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
25 µA @ 120 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-
STPS2L60AFN
STMicroelectronics

DIODE SCHOTTKY 60V 2A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 150°C
パッケージ: -
在庫24,354
60 V
2A
600 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
150°C
STPS2H100AFY
STMicroelectronics

DIODE SCHOTT 100V 2A SOD128FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD128Flat
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫33,564
100 V
2A
790 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 100 V
-
Surface Mount
SOD-128
SOD128Flat
-40°C ~ 175°C
STPS2H100AFN
STMicroelectronics

DIODE SCHOTTKY 100V 2A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 175°C
パッケージ: -
Request a Quote
100 V
2A
790 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 100 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
175°C
STPSC30G12WL
STMicroelectronics

1200 V, 20 A HIGH SURGE SILICON

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
パッケージ: -
在庫540
-
-
-
-
-
-
-
-
-
-
-
1N5819UB1
STMicroelectronics

AEROSPACE 45 V POWER SCHOTTKY RE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 45 V
  • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 2-LCCB
  • Operating Temperature - Junction: 150°C
パッケージ: -
在庫75
45 V
1A
450 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 45 V
70pF @ 5V, 1MHz
Surface Mount
2-SMD, No Lead
2-LCCB
150°C
STPS3170AFN
STMicroelectronics

DIODE SCHOTTKY 170V 3A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 170 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4 µA @ 170 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 175°C
パッケージ: -
在庫51,735
170 V
3A
820 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
4 µA @ 170 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
175°C
STTH30RQ06WY
STMicroelectronics

DIODE GEN PURP 600V 30A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
Request a Quote
600 V
30A
2.95 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
40 µA @ 600 V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
STTH30RQ06WL
STMicroelectronics

DIODE GEN PURP 600V 30A DO247 LL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: DO-247 LL
  • Operating Temperature - Junction: 175°C (Max)
パッケージ: -
在庫60
600 V
30A
2.95 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
40 µA @ 600 V
-
Through Hole
TO-247-2
DO-247 LL
175°C (Max)
STTH30RQ06DY
STMicroelectronics

DIODE GEN PURP 600V 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫3,000
600 V
30A
2.95 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
40 µA @ 600 V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STPS3H100UFN
STMicroelectronics

DIODE SCHOTTKY 100V 3A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 760 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5 mA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBflat
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
Request a Quote
100 V
3A
760 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5 mA @ 100 V
-
Surface Mount
DO-221AA, SMB Flat Leads
SMBflat
-40°C ~ 175°C
STPSC10H12WL
STMicroelectronics

DIODE SIL CARB 1.2KV 10A DO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
  • Capacitance @ Vr, F: 725pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫1,278
1200 V
10A
1.5 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 1200 V
725pF @ 0V, 1MHz
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
STPST8H100SFY
STMicroelectronics

AUTOMOTIVE 100 V, 8 A POWER SCHO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 695 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 17 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫18,000
100 V
8A
695 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
17 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
STPSC10065GY-TR
STMicroelectronics

DIODE SIL CARBIDE 650V 10A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 130 µA @ 650 V
  • Capacitance @ Vr, F: 670pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫1,878
650 V
10A
1.45 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
130 µA @ 650 V
670pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
STPS660CSFY
STMicroelectronics

DIODE SCHOTTKY 60V 3A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 19 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫8,913
60 V
3A
610 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
19 µA @ 60 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
STPS1230SF
STMicroelectronics

DIODE SCHOTTKY 30V 12A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 360 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: 150°C (Max)
パッケージ: -
在庫10,464
30 V
12A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
360 µA @ 30 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
150°C (Max)
STPSC10065D
STMicroelectronics

DIODE SIL CARB 650V 10A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 130 µA @ 650 V
  • Capacitance @ Vr, F: 670pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫1,767
650 V
10A
1.45 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
130 µA @ 650 V
670pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STPS2L40AFN
STMicroelectronics

DIODE SCHOTTKY 40V 2A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 220 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 150°C
パッケージ: -
Request a Quote
40 V
2A
430 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
220 µA @ 40 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
150°C
STPS5H100UFN
STMicroelectronics

DIODE SCHOTTKY 100V 5A SMBFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 8 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBflat Notch
  • Operating Temperature - Junction: 175°C
パッケージ: -
Request a Quote
100 V
5A
745 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
8 µA @ 100 V
-
Surface Mount
DO-221AA, SMB Flat Leads
SMBflat Notch
175°C
STPS5H100SFY
STMicroelectronics

DIODE SCHOTTKY 100V 5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 8 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫32,289
100 V
5A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
8 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
STTH30RQ06L2Y-TR
STMicroelectronics

DIODE GEN PURP 600V 30A HU3PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: HU3PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫900
600 V
30A
2.95 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
40 µA @ 600 V
-
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
HU3PAK
-40°C ~ 175°C
STBR3012G2-TR
STMicroelectronics

DIODE GP 1.2KV 30A D2PAK HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: 175°C (Max)
パッケージ: -
在庫4,662
1200 V
30A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
2 µA @ 1200 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
175°C (Max)
STTH60RQ06WY
STMicroelectronics

DIODE GEN PURP 600V 60A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
Request a Quote
600 V
60A
-
Fast Recovery =< 500ns, > 200mA (Io)
65 ns
80 µA @ 600 V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
STTH60RQ06WL
STMicroelectronics

DIODE GEN PURP 600V 60A DO247 LL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: DO-247 LL
  • Operating Temperature - Junction: 175°C (Max)
パッケージ: -
在庫1,449
600 V
60A
2.95 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
65 ns
80 µA @ 600 V
-
Through Hole
TO-247-2
DO-247 LL
175°C (Max)
STTH1R06AF
STMicroelectronics

DIODE GP 600V 1A SOD128FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD128Flat
  • Operating Temperature - Junction: 175°C (Max)
パッケージ: -
在庫6,309
600 V
1A
1.9 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
1 µA @ 600 V
-
Surface Mount
SOD-128
SOD128Flat
175°C (Max)
STTH1004FP
STMicroelectronics

DISCRETE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FPAC
  • Operating Temperature - Junction: 175°C
パッケージ: -
Request a Quote
400 V
10A
1.7 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
140 ns
1 µA @ 400 V
-
Through Hole
TO-220-2 Full Pack
TO-220FPAC
175°C
STPS630CSFY
STMicroelectronics

DIODE SCHOTTKY 30V 3A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 95 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
パッケージ: -
在庫17,169
30 V
3A
450 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
95 µA @ 30 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
STPSC10H12G2Y-TR
STMicroelectronics

DIODE SIL CARB 1.2KV 10A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
  • Capacitance @ Vr, F: 725pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
在庫2,616
1200 V
10A
1.5 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 1200 V
725pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
-40°C ~ 175°C