Taiwan Semiconductor Corporation 製品

BZD27C12P MTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 12.05V
• Tolerance: ±5.39%
• Power - Max: 1W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

パッケージ: DO-219AB

1SMA5952HR3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 130V, 1500MW, 5%,

• Voltage - Zener (Nom) (Vz): 130V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 98.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

BZD17C51P M2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5.88%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 39V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

パッケージ: DO-219AB

BZY55C3V3 RYG

Taiwan Semiconductor Corporation

DIODE, ZENER, 3.3V, 500MW, 5%, 0

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805

パッケージ: 0805 (2012 Metric)

DBLS153GHRDG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

パッケージ: 4-SMD, Gull Wing

RABS15M RGG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, FAST, 1.5A, 10

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
• Current - Reverse Leakage @ Vr: 1µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS-L

パッケージ: 4-SMD, Gull Wing

UGA15120H

Taiwan Semiconductor Corporation

DIODE GEN PURP 1.2KV 15A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 65 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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SRS16100H

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 100V 16A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

パッケージ: -

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KBL401G-T0

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 50V 4A KBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50 V
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
• Current - Reverse Leakage @ Vr: 10 µA @ 50 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBL
• Supplier Device Package: KBL

パッケージ: -

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HS5G-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

BZT52C12-G

Taiwan Semiconductor Corporation

SOD-123, 350MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±5%
• Power - Max: 350 mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 8 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: -

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S5K-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

S2MFSH

Taiwan Semiconductor Corporation

2A, 1000V, STANDARD RECOVERY REC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

S4JH

Taiwan Semiconductor Corporation

4A, 600V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

BZT52B16S

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 16 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 11.2 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

パッケージ: -

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1PGSMB5928

Taiwan Semiconductor Corporation

DIODE ZENER 13V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 13 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

パッケージ: -

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TSM60NC390CP-ROG

Taiwan Semiconductor Corporation

600V, 11A, SINGLE N-CHANNEL POWE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

FR155G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1.5A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

DBLS204GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 400V 2A DBLS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400 V
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
• Current - Reverse Leakage @ Vr: 2 µA @ 400 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

パッケージ: -

BZD27C20P

Taiwan Semiconductor Corporation

DIODE ZENER 20V 1W SUB SMA

• Voltage - Zener (Nom) (Vz): 20 V
• Tolerance: ±6%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 15 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

パッケージ: -

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MMSZ4703-RHG

Taiwan Semiconductor Corporation

SOD-123, 500MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 16 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 1 µA @ 12.1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: -

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MBRS1045CTH

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 45V 10A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 45 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

パッケージ: -

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SS19L

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 1A SUB SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 90 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

MUR4L40H

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 4A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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KBU607G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 6A KBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 6 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBU
• Supplier Device Package: KBU

パッケージ: -

BZX584B2V7

Taiwan Semiconductor Corporation

SOD-523F, 150MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 2.7 V
• Tolerance: ±2%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 20 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

パッケージ: -

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1PGSMC5366-V7G

Taiwan Semiconductor Corporation

DIODE ZENER 5W DO214AB

• Voltage - Zener (Nom) (Vz): 39 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 29.7 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)

パッケージ: -

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BAT54AD

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 30V 200MA SOT363

• Diode Configuration: 2 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Operating Temperature - Junction: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

パッケージ: -

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