ページ 73 - Taiwan Semiconductor Corporation 製品

部品番号	メーカ	説明	パッケージ	在庫
BZD27C82PHRUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 82V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 82V Tolerance: ±6.09% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 62V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫2,048
BZD17C200P RTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 800MW, %, SU Voltage - Zener (Nom) (Vz): 200V Tolerance: ±6% Power - Max: 800mW Impedance (Max) (Zzt): 750 Ohms Current - Reverse Leakage @ Vr: 1µA @ 150V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫4,272
BZD17C47P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 47V Tolerance: ±6.38% Power - Max: 800mW Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1µA @ 36V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫5,808
BZT52B5V1S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.1V, 200MW, 2%, S Voltage - Zener (Nom) (Vz): 5.1V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1.8µA @ 2V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	パッケージ: SC-90, SOD-323F	在庫6,048
BZT52C3V9-G RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.9V, 350MW, 5%, S Voltage - Zener (Nom) (Vz): 3.9V Tolerance: ±5% Power - Max: 350mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 3µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	パッケージ: SOD-123	在庫7,872
MTZJ9V1SA R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 8.51V, 500MW, %, D Voltage - Zener (Nom) (Vz): 8.51V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 500nA @ 6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	パッケージ: DO-204AG, DO-34, Axial	在庫5,216
BZT52B3V3 RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.3V, 500MW, 2%, S Voltage - Zener (Nom) (Vz): 3.3V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 95 Ohms Current - Reverse Leakage @ Vr: 4.5µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	パッケージ: SOD-123F	在庫2,928
DBLS155G RDG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1.5A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 2µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	パッケージ: 4-SMD, Gull Wing	在庫4,608
TS19371CX6 RFG	Taiwan Semiconductor Corporation	IC LED DRVR REG PWM SOT26 Type: DC DC Regulator Topology: Step-Up (Boost) Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 18V Voltage - Output: - Current - Output / Channel: 650mA (Switch) Frequency: 1.2MHz Dimming: Analog, PWM Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	パッケージ: SOT-23-6	在庫48,474
TS393CD C3G	Taiwan Semiconductor Corporation	IC COMPARATOR DUAL 8DIP Type: General Purpose Number of Elements: 2 Output Type: CMOS, DTL, ECL, MOS, TTL Voltage - Supply, Single/Dual (±): 2 V ~ 36 V, ±1 V ~ 18 V Voltage - Input Offset (Max): 2mV @ 5V Current - Input Bias (Max): 25nA Current - Output (Typ): 16mA @ 5V Current - Quiescent (Max): 1mA CMRR, PSRR (Typ): - Propagation Delay (Max): - Hysteresis: - Operating Temperature: 0°C ~ 70°C Package / Case: 8-DIP (0.309", 7.87mm) Mounting Type: Through Hole Supplier Device Package: 8-DIP	パッケージ: 8-DIP (0.309", 7.87mm)	在庫6,816
MBRAD10150DH	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 150V THINDPAK Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: ThinDPAK	パッケージ: -	在庫13,470
TS40P05GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 40A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	パッケージ: -	在庫1,326
TSM60NC980CP-ROG	Taiwan Semiconductor Corporation	600V, 4A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫15,000
1PGSMB5945-R5G	Taiwan Semiconductor Corporation	DIODE ZENER 68V 3W DO214AA Voltage - Zener (Nom) (Vz): 68 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 120 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 51.7 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	パッケージ: -	Request a Quote
S5JB	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫34,800
TSM8568CS	Taiwan Semiconductor Corporation	MOSFET N/P-CH 30V 15A/13A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: -	Request a Quote
UF1KH	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫15,000
SR20150H	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 150V 20A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: -	Request a Quote
BZD27C43PWH	Taiwan Semiconductor Corporation	DIODE ZENER 43V 1W SOD123W Voltage - Zener (Nom) (Vz): 43 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 33 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W	パッケージ: -	Request a Quote
SF31G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote
TSM076NH04DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 40V 14A/34A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V Power - Max: 55.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	パッケージ: -	在庫14,034
M3Z68VC	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 68 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 51 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	パッケージ: -	Request a Quote
BZT52B10-G	Taiwan Semiconductor Corporation	SOD-123, 410MW, 2%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 10 V Tolerance: ±2% Power - Max: 410 mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 200 nA @ 7 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	パッケージ: -	Request a Quote
TSM240N03CX	Taiwan Semiconductor Corporation	30V, 6.5A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: -	Request a Quote
BZT52B24	Taiwan Semiconductor Corporation	SOD-123F, 500MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 24 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 70 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	パッケージ: -	Request a Quote
KBL607G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 6A KBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBL Supplier Device Package: KBL	パッケージ: -	在庫3,000
1PGSMC5366-R7G	Taiwan Semiconductor Corporation	DIODE ZENER 39V 5W DO214AB Voltage - Zener (Nom) (Vz): 39 V Tolerance: ±5% Power - Max: 5 W Impedance (Max) (Zzt): 14 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 29.7 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC)	パッケージ: -	Request a Quote
SK86C-R6	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote

BZD27C82PHRUG

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, AE

Voltage - Zener (Nom) (Vz): 82V
Tolerance: ±6.09%
Power - Max: 1W
Impedance (Max) (Zzt): 200 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 62V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA

パッケージ: DO-219AB

在庫2,048

BZD17C200P RTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 200V, 800MW, %, SU

Voltage - Zener (Nom) (Vz): 200V
Tolerance: ±6%
Power - Max: 800mW
Impedance (Max) (Zzt): 750 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 150V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA

パッケージ: DO-219AB

在庫4,272

BZD17C47P MHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 47V, 800MW, %, SUB

Voltage - Zener (Nom) (Vz): 47V
Tolerance: ±6.38%
Power - Max: 800mW
Impedance (Max) (Zzt): 45 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 36V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA

パッケージ: DO-219AB

在庫5,808

BZT52B5V1S RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.1V, 200MW, 2%, S

Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±2%
Power - Max: 200mW
Impedance (Max) (Zzt): 60 Ohms
Current - Reverse Leakage @ Vr: 1.8µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F

パッケージ: SC-90, SOD-323F

在庫6,048

BZT52C3V9-G RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 3.9V, 350MW, 5%, S

Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

パッケージ: SOD-123

在庫7,872

MTZJ9V1SA R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 8.51V, 500MW, %, D

Voltage - Zener (Nom) (Vz): 8.51V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 6V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO-34

パッケージ: DO-204AG, DO-34, Axial

在庫5,216

BZT52B3V3 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 3.3V, 500MW, 2%, S

Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 95 Ohms
Current - Reverse Leakage @ Vr: 4.5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F

パッケージ: SOD-123F

在庫2,928

DBLS155G RDG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Reverse Leakage @ Vr: 2µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DBLS

パッケージ: 4-SMD, Gull Wing

在庫4,608

TS19371CX6 RFG

Taiwan Semiconductor Corporation

IC LED DRVR REG PWM SOT26

Type: DC DC Regulator
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Number of Outputs: 1
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 18V
Voltage - Output: -
Current - Output / Channel: 650mA (Switch)
Frequency: 1.2MHz
Dimming: Analog, PWM
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

パッケージ: SOT-23-6

在庫48,474

TS393CD C3G

Taiwan Semiconductor Corporation

IC COMPARATOR DUAL 8DIP

Type: General Purpose
Number of Elements: 2
Output Type: CMOS, DTL, ECL, MOS, TTL
Voltage - Supply, Single/Dual (±): 2 V ~ 36 V, ±1 V ~ 18 V
Voltage - Input Offset (Max): 2mV @ 5V
Current - Input Bias (Max): 25nA
Current - Output (Typ): 16mA @ 5V
Current - Quiescent (Max): 1mA
CMRR, PSRR (Typ): -
Propagation Delay (Max): -
Hysteresis: -
Operating Temperature: 0°C ~ 70°C
Package / Case: 8-DIP (0.309", 7.87mm)
Mounting Type: Through Hole
Supplier Device Package: 8-DIP

パッケージ: 8-DIP (0.309", 7.87mm)

在庫6,816

MBRAD10150DH

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 150V THINDPAK

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: ThinDPAK

パッケージ: -

在庫13,470

TS40P05GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 40A TS-6P

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

パッケージ: -

在庫1,326

TSM60NC980CP-ROG

Taiwan Semiconductor Corporation

600V, 4A, SINGLE N-CHANNEL POWER

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫15,000

1PGSMB5945-R5G

Taiwan Semiconductor Corporation

DIODE ZENER 68V 3W DO214AA

Voltage - Zener (Nom) (Vz): 68 V
Tolerance: ±5%
Power - Max: 3 W
Impedance (Max) (Zzt): 120 Ohms
Current - Reverse Leakage @ Vr: 1 µA @ 51.7 V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)

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S5JB

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

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在庫34,800

TSM8568CS

Taiwan Semiconductor Corporation

MOSFET N/P-CH 30V 15A/13A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

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UF1KH

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

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在庫15,000

SR20150H

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 150V 20A TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

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BZD27C43PWH

Taiwan Semiconductor Corporation

DIODE ZENER 43V 1W SOD123W

Voltage - Zener (Nom) (Vz): 43 V
Tolerance: ±5%
Power - Max: 1 W
Impedance (Max) (Zzt): 45 Ohms
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W

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SF31G

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

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TSM076NH04DCR-RLG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 14A/34A 8PDFNU

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1217pF @ 25V
Power - Max: 55.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFNU (5x6)

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在庫14,034

M3Z68VC

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, ZENER DIODE

Voltage - Zener (Nom) (Vz): 68 V
Tolerance: ±5%
Power - Max: 200 mW
Impedance (Max) (Zzt): 200 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F

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BZT52B10-G

Taiwan Semiconductor Corporation

SOD-123, 410MW, 2%, SMALL SIGNAL

Voltage - Zener (Nom) (Vz): 10 V
Tolerance: ±2%
Power - Max: 410 mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

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TSM240N03CX

Taiwan Semiconductor Corporation

30V, 6.5A, SINGLE N-CHANNEL POWE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

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BZT52B24

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 2%, SMALL SIGNA

Voltage - Zener (Nom) (Vz): 24 V
Tolerance: ±2%
Power - Max: 500 mW
Impedance (Max) (Zzt): 70 Ohms
Current - Reverse Leakage @ Vr: 45 nA @ 16.8 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F

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KBL607G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 6A KBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Supplier Device Package: KBL

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在庫3,000

1PGSMC5366-R7G

Taiwan Semiconductor Corporation

DIODE ZENER 39V 5W DO214AB

Voltage - Zener (Nom) (Vz): 39 V
Tolerance: ±5%
Power - Max: 5 W
Impedance (Max) (Zzt): 14 Ohms
Current - Reverse Leakage @ Vr: 500 nA @ 29.7 V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)

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SK86C-R6

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 8A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

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