ページ 102 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
SSM6K514NU,LF	Toshiba Semiconductor and Storage	PB-F SMALL LOW ON RESISTANCE MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 4A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	パッケージ: 6-WDFN Exposed Pad	在庫3,936
TPH7R204PL,LQ	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 15A, 4.5V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫24,258
2SC2235-Y(DNSO,AF)	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫3,360
2SA1315-Y,HOF(M	Toshiba Semiconductor and Storage	TRANS PNP 2A 80V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫6,656
CMS05(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 5A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 30V Capacitance @ Vr, F: 330pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: SOD-128	在庫66,468
TCV7101F(TE12L,Q)	Toshiba Semiconductor and Storage	IC REG BUCK ADJ 3.8A 8SOP-ADV Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 2.7V Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 5.5V Current - Output: 3.8A Frequency - Switching: 600kHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-SOP Advance (5x5)	パッケージ: 8-PowerVDFN	在庫5,552
TB62218AFTG,8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48QFN Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	パッケージ: 48-VFQFN Exposed Pad	在庫6,960
TC7WT74FUTE12LF	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 8SSOP Function: Set(Preset) and Reset Type: D-Type Output Type: Differential Number of Elements: 1 Number of Bits per Element: 1 Clock Frequency: 53MHz Max Propagation Delay @ V, Max CL: 30ns @ 5.5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 4mA, 4mA Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Iq): 2µA Input Capacitance: 5pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	パッケージ: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	在庫5,664
TC74LCX244FTELM	Toshiba Semiconductor and Storage	IC BUFF/DVR DUAL LV 20TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	パッケージ: 20-TSSOP (0.173", 4.40mm Width)	在庫2,720
74VHCV07FT(BJ)	Toshiba Semiconductor and Storage	IC BUFF NON-INVERT 5.5V 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 6 Number of Bits per Element: 1 Input Type: Schmitt Trigger Output Type: Open Drain Current - Output High, Low: -, 16mA Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOPB	パッケージ: 14-TSSOP (0.173", 4.40mm Width)	在庫20,976
74VHCT244AFT(BE)	Toshiba Semiconductor and Storage	IC BUFF/DVR TRI-ST DUAL 20TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	パッケージ: 20-TSSOP (0.173", 4.40mm Width)	在庫26,016
TLP7920(D4-TP1,F	Toshiba Semiconductor and Storage	X36 PB-F OPTO ISOLATION AMPLIFIE Amplifier Type: Isolation Number of Circuits: 1 Output Type: Differential Slew Rate: - Gain Bandwidth Product: - -3db Bandwidth: 230kHz Current - Input Bias: - Voltage - Input Offset: - Current - Supply: 12mA Current - Output / Channel: - Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: -	パッケージ: 8-SMD, Gull Wing	在庫13,224
TC74HC4066APF	Toshiba Semiconductor and Storage	IC SWITCH QUAD 2X1 14DIP Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 80 Ohm Channel-to-Channel Matching (ΔRon): 5 Ohm Voltage - Supply, Single (V+): 2 V ~ 12 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 12ns, 18ns -3db Bandwidth: 200MHz Charge Injection: - Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 1µA Crosstalk: -60dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP	パッケージ: 14-DIP (0.300", 7.62mm)	在庫17,616
TL1WK-LL1,L	Toshiba Semiconductor and Storage	LED LETERAS WARM WHT 2700K 2SMD Color: White, Warm CCT (K): 2700K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 19 lm (17 lm ~ 23 lm) Current - Test: 60mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 113 lm/W CRI (Color Rendering Index): 80 Current - Max: 180mA Viewing Angle: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SMD Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm) Height - Seated (Max): 0.015" (0.39mm)	パッケージ: 2-SMD, No Lead	在庫7,200
DF2S6.8ASL,L3F	Toshiba Semiconductor and Storage	TVS DIODE 5VWM SL2-2 Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SL2	パッケージ: 0201 (0603 Metric)	在庫249,768
DF3A3.3FU(TE85L,F)	Toshiba Semiconductor and Storage	TVS DIODE 1VWM USM Type: Zener Unidirectional Channels: 2 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 1V Voltage - Breakdown (Min): 3.1V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 115pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫29,634
TLP700(F)	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRIVER 6SDIP GW Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): - Rise / Fall Time (Typ): 50ns, 50ns Current - Output High, Low: 1.5A, 1.5A Current - Peak Output: 2A Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.268", 6.80mm Width) Supplier Device Package: 6-SDIP Gull Wing Approvals: UR	パッケージ: 6-SOIC (0.268", 6.80mm Width)	在庫7,056
TC62D748AFG,EL	Toshiba Semiconductor and Storage	CONSTANT CURRENT PANEL LED DRIVE Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,904
TCR3UG30A,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 3V 300MA 4WCSP-F Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): 0.273V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Thermal Shutdown Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSP-F (0.65x0.65)	パッケージ: 4-XFBGA, WLCSP	在庫49,158
TCR2LN19,LF	Toshiba Semiconductor and Storage	200MA LDO VOUT=1.9V DROPOUT=200M Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.9V Voltage - Output (Max): - Voltage Dropout (Max): 0.6V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	パッケージ: 4-XFDFN Exposed Pad	在庫97,074
TC74LCX02FT-EL	Toshiba Semiconductor and Storage	IC GATE NOR 4CH 2-INP 14-TSSOP Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Max): 10 µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	パッケージ: -	Request a Quote
TK22A65X5-S5X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: -	在庫384
TPH2R104PL-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 100A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: -	在庫35,247
TCR2EN28-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=2.8V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.21V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	パッケージ: -	在庫22,488
RN2906FE-LF-CT	Toshiba Semiconductor and Storage	PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: -	在庫11,928
CRS01-TE85L	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 125°C	パッケージ: -	Request a Quote
RN4907FE-LF-CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: -	在庫11,940
TK110N65Z-S1F	Toshiba Semiconductor and Storage	POWER MOSFET TRANSISTOR TO-247(O FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.02mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	パッケージ: -	在庫75

SSM6K514NU,LF

Toshiba Semiconductor and Storage

PB-F SMALL LOW ON RESISTANCE MOS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 4A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad

パッケージ: 6-WDFN Exposed Pad

在庫3,936

TPH7R204PL,LQ

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 15A, 4.5V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫24,258

2SC2235-Y(DNSO,AF)

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫3,360

2SA1315-Y,HOF(M

Toshiba Semiconductor and Storage

TRANS PNP 2A 80V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫6,656

CMS05(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 30V
Capacitance @ Vr, F: 330pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: SOD-128

在庫66,468

TCV7101F(TE12L,Q)

Toshiba Semiconductor and Storage

IC REG BUCK ADJ 3.8A 8SOP-ADV

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 2.7V
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 5.5V
Current - Output: 3.8A
Frequency - Switching: 600kHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)

パッケージ: 8-PowerVDFN

在庫5,552

TB62218AFTG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

パッケージ: 48-VFQFN Exposed Pad

在庫6,960

TC7WT74FUTE12LF

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 8SSOP

Function: Set(Preset) and Reset
Type: D-Type
Output Type: Differential
Number of Elements: 1
Number of Bits per Element: 1
Clock Frequency: 53MHz
Max Propagation Delay @ V, Max CL: 30ns @ 5.5V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Iq): 2µA
Input Capacitance: 5pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

パッケージ: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

在庫5,664

TC74LCX244FTELM

Toshiba Semiconductor and Storage

IC BUFF/DVR DUAL LV 20TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

パッケージ: 20-TSSOP (0.173", 4.40mm Width)

在庫2,720

74VHCV07FT(BJ)

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Output Type: Open Drain
Current - Output High, Low: -, 16mA
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOPB

パッケージ: 14-TSSOP (0.173", 4.40mm Width)

在庫20,976

74VHCT244AFT(BE)

Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST DUAL 20TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

パッケージ: 20-TSSOP (0.173", 4.40mm Width)

在庫26,016

TLP7920(D4-TP1,F

Toshiba Semiconductor and Storage

X36 PB-F OPTO ISOLATION AMPLIFIE

Amplifier Type: Isolation
Number of Circuits: 1
Output Type: Differential
Slew Rate: -
Gain Bandwidth Product: -
-3db Bandwidth: 230kHz
Current - Input Bias: -
Voltage - Input Offset: -
Current - Supply: 12mA
Current - Output / Channel: -
Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: -

パッケージ: 8-SMD, Gull Wing

在庫13,224

TC74HC4066APF

Toshiba Semiconductor and Storage

IC SWITCH QUAD 2X1 14DIP

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 80 Ohm
Channel-to-Channel Matching (ΔRon): 5 Ohm
Voltage - Supply, Single (V+): 2 V ~ 12 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 12ns, 18ns
-3db Bandwidth: 200MHz
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Crosstalk: -60dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-DIP

パッケージ: 14-DIP (0.300", 7.62mm)

在庫17,616

TL1WK-LL1,L

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 2700K 2SMD

Color: White, Warm
CCT (K): 2700K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 19 lm (17 lm ~ 23 lm)
Current - Test: 60mA
Voltage - Forward (Vf) (Typ): 2.8V
Lumens/Watt @ Current - Test: 113 lm/W
CRI (Color Rendering Index): 80
Current - Max: 180mA
Viewing Angle: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SMD
Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
Height - Seated (Max): 0.015" (0.39mm)

パッケージ: 2-SMD, No Lead

在庫7,200

DF2S6.8ASL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 5VWM SL2-2

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: SL2

パッケージ: 0201 (0603 Metric)

在庫249,768

DF3A3.3FU(TE85L,F)

Toshiba Semiconductor and Storage

TVS DIODE 1VWM USM

Type: Zener
Unidirectional Channels: 2
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 1V
Voltage - Breakdown (Min): 3.1V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫29,634

TLP700(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): -
Rise / Fall Time (Typ): 50ns, 50ns
Current - Output High, Low: 1.5A, 1.5A
Current - Peak Output: 2A
Voltage - Forward (Vf) (Typ): 1.57V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Supplier Device Package: 6-SDIP Gull Wing
Approvals: UR

パッケージ: 6-SOIC (0.268", 6.80mm Width)

在庫7,056

TC62D748AFG,EL

Toshiba Semiconductor and Storage

CONSTANT CURRENT PANEL LED DRIVE

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,904

TCR3UG30A,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3V 300MA 4WCSP-F

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.273V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WCSP-F (0.65x0.65)

パッケージ: 4-XFBGA, WLCSP

在庫49,158

TCR2LN19,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=1.9V DROPOUT=200M

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.9V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.6V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

パッケージ: 4-XFDFN Exposed Pad

在庫97,074

TC74LCX02FT-EL

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14-TSSOP

Logic Type: NOR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Max): 10 µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

パッケージ: -

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TK22A65X5-S5X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: -

在庫384

TPH2R104PL-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: -

在庫35,247

TCR2EN28-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=2.8V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.21V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

パッケージ: -

在庫22,488

RN2906FE-LF-CT

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: -

在庫11,928

CRS01-TE85L

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: -

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RN4907FE-LF-CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: -

在庫11,940

TK110N65Z-S1F

Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR TO-247(O

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

パッケージ: -

在庫75