ページ 109 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
TK16A60W,S4VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 15.8A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫8,520
TK17E65W,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 17.3A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫8,172
TPCC8008(TE12L,QM)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 25A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Package / Case: 8-VDFN Exposed Pad	パッケージ: 8-VDFN Exposed Pad	在庫24,354
TPCC8002-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 22A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Package / Case: 8-VDFN Exposed Pad	パッケージ: 8-VDFN Exposed Pad	在庫23,844
TK14N65W5,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 690µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫6,352
SSM6J801R,LF	Toshiba Semiconductor and Storage	SMALL-SIGNAL PCH MOSFET UMOSVI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Vgs (Max): +6V, -8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	パッケージ: -	在庫52,074
2SK209-GR(TE85L,F)	Toshiba Semiconductor and Storage	JFET N-CH SOT23 Transistor Type: N-Channel JFET Frequency: 1kHz Gain: - Voltage - Test: 10V Current Rating: - Noise Figure: 1dB Current - Test: 500µA Power - Output: - Voltage - Rated: - Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫15,804
RN2108ACT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W CST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	パッケージ: SC-101, SOT-883	在庫7,664
RN2902FE(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: SOT-563, SOT-666	在庫3,984
RN4902,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫25,506
TCR4DG35,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 3.5V 420MA WCSP4E Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.26V @ 420mA Current - Output: 420mA Current - Quiescent (Iq): - Current - Supply (Max): 68µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫97,512
TC74HC4538AF-ELF	Toshiba Semiconductor and Storage	IC MULTIVIBRATR 25NS 16SOP Logic Type: Monostable Independent Circuits: 2 Schmitt Trigger Input: Yes Propagation Delay: 25ns Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Supplier Device Package: 16-SOP	パッケージ: 16-SOIC (0.209", 5.30mm Width)	在庫24,000
TC4S71FT5LFT	Toshiba Semiconductor and Storage	IC GATE OR 1CH 2-INP SMV Logic Type: OR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 3 V ~ 18 V Current - Quiescent (Max): 1µA Current - Output High, Low: 3.4mA, 3.4mA Logic Level - Low: 1.5 V ~ 4 V Logic Level - High: 3.5 V ~ 11 V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	パッケージ: SC-74A, SOT-753	在庫7,424
TC4S30FT5LFT	Toshiba Semiconductor and Storage	IC GATE XOR 1CH 2-INP SMV Logic Type: XOR (Exclusive OR) Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 3 V ~ 18 V Current - Quiescent (Max): 4µA Current - Output High, Low: 3.4mA, 3.4mA Logic Level - Low: 1.5 V ~ 4 V Logic Level - High: 3.5 V ~ 11 V Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	パッケージ: SC-74A, SOT-753	在庫7,424
74HC374D(BJ)	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 20SOIC Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 90MHz Max Propagation Delay @ V, Max CL: 32ns @ 6V, 150pF Trigger Type: Positive Edge Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Iq): 4µA Input Capacitance: 3pF Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width)	パッケージ: 20-SOIC (0.295", 7.50mm Width)	在庫22,860
TC7PG34AFE(TE85L,F	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERTER ES6 Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 0.9 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	パッケージ: SOT-563, SOT-666	在庫3,248
TC7WBL3306CFK(5L,F	Toshiba Semiconductor and Storage	IC USB SWITCH SPST DUAL US8 Applications: - Multiplexer/Demultiplexer Circuit: - Switch Circuit: - Number of Channels: 2 On-State Resistance (Max): 19 Ohm Voltage - Supply, Single (V+): 1.65 V ~ 3.6 V Voltage - Supply, Dual (V±): - -3db Bandwidth: - Features: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: 8-SSOP	パッケージ: 8-VFSOP (0.091", 2.30mm Width)	在庫4,720
TLBD1060(T18)	Toshiba Semiconductor and Storage	LED BLUE 2MINI PLCC SMD Color: Blue Configuration: - Lens Color: - Lens Transparency: - Millicandela Rating: 60mcd Lens Style/Size: Rectangle with Flat Top Voltage - Forward (Vf) (Typ): 3.3V Current - Test: 20mA Viewing Angle: - Mounting Type: Surface Mount Wavelength - Dominant: 470nm Wavelength - Peak: 468nm Features: - Package / Case: 2-Mini PLCC Supplier Device Package: 2-MiniPLCC Size / Dimension: 2.00mm L x 1.40mm W Height (Max): 1.50mm	パッケージ: 2-Mini PLCC	在庫2,772
TLP3120(TP,F)	Toshiba Semiconductor and Storage	PHOTORELAY 80V 5MA 6SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 150 mOhm Load Current: 1.25A Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 80 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm) Relay Type: Relay	パッケージ: 6-SOP (0.173", 4.40mm)	在庫4,086
TLP3220(TP15,F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET OUT 5MA 4-SSOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 14 Ohm Load Current: 80mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 100 V Mounting Type: Surface Mount Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.165", 4.20mm) Supplier Device Package: 4-SSOP Relay Type: Relay	パッケージ: 4-SMD (0.165", 4.20mm)	在庫99,192
TCR2EE42,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT4.2V DROPOUT180MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,184
7UL1T126FU-LF	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 3.6V USV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	パッケージ: -	在庫22,956
RN4903-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR PNP + NPN BRT Q1BS Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: -	在庫18,000
TB67H481FTG-O-EL	Toshiba Semiconductor and Storage	BRUSHED MOTOR DRIVERS, 2-CH, 50V Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: PWM Technology: BiCDMOS Step Resolution: 1, 1/2 Applications: General Purpose Current - Output: 3A Voltage - Supply: 8.2V ~ 44V Voltage - Load: 50V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: 32-VQFN (5x5)	パッケージ: -	Request a Quote
TB62216FTG-8-EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48QFN Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: PWM Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 2.5A Voltage - Supply: 40V (Max) Voltage - Load: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	パッケージ: -	Request a Quote
TCR2EN21-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=2.1V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.1V Voltage - Output (Max): - Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	パッケージ: -	在庫29,970
TCR3RM29A-LF-SE	Toshiba Semiconductor and Storage	LDO REG 2.9V 300MA 4DFNC Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.9V Voltage - Output (Max): - Voltage Dropout (Max): 0.15V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 12 µA Current - Supply (Max): - PSRR: - Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 4-DFNC (1x1)	パッケージ: -	在庫8,346
TPH3R506PL-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 94A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 47A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: -	Request a Quote

TK16A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫8,520

TK17E65W,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 17.3A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.7A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫8,172

TPCC8008(TE12L,QM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 25A 8TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1A
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 12.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON
Package / Case: 8-VDFN Exposed Pad

パッケージ: 8-VDFN Exposed Pad

在庫24,354

TPCC8002-H(TE12L,Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 22A 8TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 11A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON
Package / Case: 8-VDFN Exposed Pad

パッケージ: 8-VDFN Exposed Pad

在庫23,844

TK14N65W5,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫6,352

SSM6J801R,LF

Toshiba Semiconductor and Storage

SMALL-SIGNAL PCH MOSFET UMOSVI

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Vgs (Max): +6V, -8V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 3A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫52,074

2SK209-GR(TE85L,F)

Toshiba Semiconductor and Storage

JFET N-CH SOT23

Transistor Type: N-Channel JFET
Frequency: 1kHz
Gain: -
Voltage - Test: 10V
Current Rating: -
Noise Figure: 1dB
Current - Test: 500µA
Power - Output: -
Voltage - Rated: -
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫15,804

RN2108ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

パッケージ: SC-101, SOT-883

在庫7,664

RN2902FE(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: SOT-563, SOT-666

在庫3,984

RN4902,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫25,506

TCR4DG35,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3.5V 420MA WCSP4E

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.26V @ 420mA
Current - Output: 420mA
Current - Quiescent (Iq): -
Current - Supply (Max): 68µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫97,512

TC74HC4538AF-ELF

Toshiba Semiconductor and Storage

IC MULTIVIBRATR 25NS 16SOP

Logic Type: Monostable
Independent Circuits: 2
Schmitt Trigger Input: Yes
Propagation Delay: 25ns
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 16-SOP

パッケージ: 16-SOIC (0.209", 5.30mm Width)

在庫24,000

TC4S71FT5LFT

Toshiba Semiconductor and Storage

IC GATE OR 1CH 2-INP SMV

Logic Type: OR Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 3 V ~ 18 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 3.4mA, 3.4mA
Logic Level - Low: 1.5 V ~ 4 V
Logic Level - High: 3.5 V ~ 11 V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

パッケージ: SC-74A, SOT-753

在庫7,424

TC4S30FT5LFT

Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP SMV

Logic Type: XOR (Exclusive OR)
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 3 V ~ 18 V
Current - Quiescent (Max): 4µA
Current - Output High, Low: 3.4mA, 3.4mA
Logic Level - Low: 1.5 V ~ 4 V
Logic Level - High: 3.5 V ~ 11 V
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

パッケージ: SC-74A, SOT-753

在庫7,424

74HC374D(BJ)

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20SOIC

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 90MHz
Max Propagation Delay @ V, Max CL: 32ns @ 6V, 150pF
Trigger Type: Positive Edge
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Iq): 4µA
Input Capacitance: 3pF
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)

パッケージ: 20-SOIC (0.295", 7.50mm Width)

在庫22,860

TC7PG34AFE(TE85L,F

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERTER ES6

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

パッケージ: SOT-563, SOT-666

在庫3,248

TC7WBL3306CFK(5L,F

Toshiba Semiconductor and Storage

IC USB SWITCH SPST DUAL US8

Applications: -
Multiplexer/Demultiplexer Circuit: -
Switch Circuit: -
Number of Channels: 2
On-State Resistance (Max): 19 Ohm
Voltage - Supply, Single (V+): 1.65 V ~ 3.6 V
Voltage - Supply, Dual (V±): -
-3db Bandwidth: -
Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package: 8-SSOP

パッケージ: 8-VFSOP (0.091", 2.30mm Width)

在庫4,720

TLBD1060(T18)

Toshiba Semiconductor and Storage

LED BLUE 2MINI PLCC SMD

Color: Blue
Configuration: -
Lens Color: -
Lens Transparency: -
Millicandela Rating: 60mcd
Lens Style/Size: Rectangle with Flat Top
Voltage - Forward (Vf) (Typ): 3.3V
Current - Test: 20mA
Viewing Angle: -
Mounting Type: Surface Mount
Wavelength - Dominant: 470nm
Wavelength - Peak: 468nm
Features: -
Package / Case: 2-Mini PLCC
Supplier Device Package: 2-MiniPLCC
Size / Dimension: 2.00mm L x 1.40mm W
Height (Max): 1.50mm

パッケージ: 2-Mini PLCC

在庫2,772

TLP3120(TP,F)

Toshiba Semiconductor and Storage

PHOTORELAY 80V 5MA 6SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 150 mOhm
Load Current: 1.25A
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 80 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SOP (0.173", 4.40mm)
Supplier Device Package: 6-SOP (2.54mm)
Relay Type: Relay

パッケージ: 6-SOP (0.173", 4.40mm)

在庫4,086

TLP3220(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 5MA 4-SSOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 14 Ohm
Load Current: 80mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 100 V
Mounting Type: Surface Mount
Termination Style: SMD (SMT) Tab
Package / Case: 4-SMD (0.165", 4.20mm)
Supplier Device Package: 4-SSOP
Relay Type: Relay

パッケージ: 4-SMD (0.165", 4.20mm)

在庫99,192

TCR2EE42,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT4.2V DROPOUT180MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,184

7UL1T126FU-LF

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 3.6V USV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: 3-State
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

パッケージ: -

在庫22,956

RN4903-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNP + NPN BRT Q1BS

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: -

在庫18,000

TB67H481FTG-O-EL

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVERS, 2-CH, 50V

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: PWM
Technology: BiCDMOS
Step Resolution: 1, 1/2
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 8.2V ~ 44V
Voltage - Load: 50V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Supplier Device Package: 32-VQFN (5x5)

パッケージ: -

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TB62216FTG-8-EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: PWM
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 2.5A
Voltage - Supply: 40V (Max)
Voltage - Load: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

パッケージ: -

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TCR2EN21-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=2.1V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.1V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

パッケージ: -

在庫29,970

TCR3RM29A-LF-SE

Toshiba Semiconductor and Storage

LDO REG 2.9V 300MA 4DFNC

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.9V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.15V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 12 µA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 4-DFNC (1x1)

パッケージ: -

在庫8,346

TPH3R506PL-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 94A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 47A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: -

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