Toshiba Semiconductor and Storage 製品

2SK208-R(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 50V S-MINI

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): -
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
• Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
• Resistance - RDS(On): -
• Power - Max: 100mW
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

パッケージ: TO-236-3, SC-59, SOT-23-3

2SK2962,T6WNLF(M

Toshiba Semiconductor and Storage

MOSFET N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-92MOD
• Package / Case: TO-226-3, TO-92-3 Long Body

パッケージ: TO-226-3, TO-92-3 Long Body

2SK3566(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 2.5A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 1.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

TK6P53D(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 525V 6A DPAK-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 525V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

TK100A06N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 100A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 50A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

パッケージ: TO-220-3 Full Pack, Isolated Tab

TK560P65Y,RQ

Toshiba Semiconductor and Storage

MOSFET TRANSISTOR DPAK(OS) PD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

2SC3668-Y,T2F(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-71
• Supplier Device Package: MSTM

パッケージ: SC-71

2SA1837,YHF(J

Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 230V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 70MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

パッケージ: TO-220-3 Full Pack

RN1402S,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

パッケージ: TO-236-3, SC-59, SOT-23-3

CRZ10(TE85L,Q)

Toshiba Semiconductor and Storage

DIODE ZENER 10V 700MW SFLAT

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±10%
• Power - Max: 700mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 6V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)

パッケージ: SOD-123F

TA78L012AP(6TOJ,AF

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

TA78DS05CP,ASHIF(M

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

TCR2EF41,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 4.1V 200MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 4.1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 73dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

TCK22971G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.1 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 25 mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Reverse Current
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-UFBGA, WLCSP
• Supplier Device Package: 6-WCSPE (0.80x1.2)

パッケージ: 6-UFBGA, WLCSP

TB62214AFG(O,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 28HSOP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: DMOS
• Step Resolution: 1, 1/2, 1/4
• Applications: General Purpose
• Current - Output: 2A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
• Supplier Device Package: 28-HSOP

パッケージ: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs

74VHC138FT

Toshiba Semiconductor and Storage

IC DECODER 3-TO-8 LINE 16-TSSOP

• Type: Decoder
• Circuit: 1 x 3:8
• Independent Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

TC7USB3212WBG(ELAH

Toshiba Semiconductor and Storage

QUAD SPDT USB SWITCH, V: 1.95V,

• Type: Multiplexer/Demultiplexer
• Circuit: 4 x 1:2
• Independent Circuits: 4
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-UFBGA, WLCSP
• Supplier Device Package: 20-WCSP

パッケージ: 20-UFBGA, WLCSP

TC4584BF(EL,N,F)

Toshiba Semiconductor and Storage

IC INVERTER 6CH SCHMITT 14SOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: Schmitt Trigger
• Voltage - Supply: 3 V ~ 18 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 3.4mA, 3.4mA
• Logic Level - Low: 1.25 V ~ 3.4 V
• Logic Level - High: 3.75 V ~ 11.6 V
• Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOP
• Package / Case: 14-SOIC (0.209", 5.30mm Width)

パッケージ: 14-SOIC (0.209", 5.30mm Width)

TC7SH34FS(TPL3)

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V FSV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-953
• Supplier Device Package: fSV

パッケージ: SOT-953

74VHC4051AFT

Toshiba Semiconductor and Storage

IC MUX/DEMUX 8X1 16TSSOP

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 37 Ohm
• Channel-to-Channel Matching (ΔRon): 5 Ohm
• Voltage - Supply, Single (V+): 2 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 12ns, 12ns
• -3db Bandwidth: 180MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 0.5pF, 23.4pF
• Current - Leakage (IS(off)) (Max): 100nA
• Crosstalk: -45dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOPB

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

TOTX1350(F)

Toshiba Semiconductor and Storage

FIBER OPTIC XMITTER 650NM

• Wavelength: 650nm
• Spectral Bandwidth: -
• Voltage - Forward (Vf) (Typ): 1.8V
• Current - DC Forward (If) (Max): 30mA
• Voltage - DC Reverse (Vr) (Max): 5V
• Capacitance: -
• Connector Type: TOSLINK

パッケージ: -

TBD62781APG

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: 18-DIP (0.300", 7.62mm)
• Supplier Device Package: 18-DIP

パッケージ: 18-DIP (0.300", 7.62mm)

2SA2142-TE16L1-NQ

Toshiba Semiconductor and Storage

TRANS PNP 600V PW-MOLD

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
• Power - Max: 1 W
• Frequency - Transition: 35MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

パッケージ: -

TC7WH123FU-TE12L

Toshiba Semiconductor and Storage

IC MULTIVIBRATOR MONOSTABLE SM8

• Logic Type: Monostable
• Independent Circuits: 1
• Schmitt Trigger Input: No
• Propagation Delay: 10.3 ns
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: 8-SSOP

パッケージ: -

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RN1707JE-TE85L-F

Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=10KOHM Q1BER=4

• Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

パッケージ: -

TK28V65W5-LQ

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
• Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 240W (Tc)
• Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: 4-DFN-EP (8x8)
• Package / Case: 4-VSFN Exposed Pad

パッケージ: -

SSM3H137TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 34V 2A UFM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 34 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 1.7V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 119 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 240mOhm @ 1A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Leads

パッケージ: -

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SSM3K16FV-L3F

Toshiba Semiconductor and Storage

PB-F VESM S-MOS (LF) TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: 1.1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: VESM
• Package / Case: SOT-723

パッケージ: -