ページ 136 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
2SK880-BL(TE85L,F)	Toshiba Semiconductor and Storage	JFET N-CH 50V 0.1W USM FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	パッケージ: SC-70, SOT-323	在庫25,356
TPCA8A04-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 44A 8SOP ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 44A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫5,376
SSM6H19NU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 2A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.2V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	パッケージ: 6-UDFN Exposed Pad	在庫4,992
TK8P60W5,RVQ	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫17,526
SSM3K339R,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 2A SOT-23F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	パッケージ: SOT-23-3 Flat Leads	在庫334,788
2SC6010(T2MITUM,FM	Toshiba Semiconductor and Storage	TRANS NPN 1A 600V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	パッケージ: SC-71	在庫6,576
2SC4793,WNLF(J	Toshiba Semiconductor and Storage	TRANS NPN 1A 230V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	パッケージ: TO-220-3 Full Pack	在庫2,448
RN1961(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.2W US6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫7,568
1SS424(TPL3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 200MA SSM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 20V Capacitance @ Vr, F: 20pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM Operating Temperature - Junction: 125°C (Max)	パッケージ: SC-75, SOT-416	在庫2,528
TA48L033F(TE12L,F)	Toshiba Semiconductor and Storage	IC REG LINEAR 3.3V 150MA PWMINI Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 100mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 800µA ~ 5mA PSRR: 68dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI (SOT-89)	パッケージ: TO-243AA	在庫12,540
TCK108AG,LF	Toshiba Semiconductor and Storage	IC POWER DIST LOAD SWITCH 4WCSP Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.1 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Rds On (Typ): 34 mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WCSPD (0.79x0.79)	パッケージ: 4-UFBGA, WLCSP	在庫47,124
TCK22973G,LF	Toshiba Semiconductor and Storage	IC PWR SWITCH P-CHAN 1:1 WCSP6E Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.1 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Rds On (Typ): 25 mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UFBGA, WLCSP Supplier Device Package: 6-WCSPE (0.80x1.2)	パッケージ: 6-UFBGA, WLCSP	在庫48,456
TC7W32FKTE85LF	Toshiba Semiconductor and Storage	IC GATE OR 2CH 2-INP US8 Logic Type: OR Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-VFSOP (0.091", 2.30mm Width)	パッケージ: 8-VFSOP (0.091", 2.30mm Width)	在庫2,464
TC7SZ14FU,LJ(CT	Toshiba Semiconductor and Storage	IC GATE USV L-MOS Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: Schmitt Trigger Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Max): 1µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: 0.2 V ~ 1.2 V Logic Level - High: 1.4 V ~ 3.6 V Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	パッケージ: 5-TSSOP, SC-70-5, SOT-353	在庫5,408
TC74HC4050AFTEL	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 6V 16TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 6 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	パッケージ: 16-TSSOP (0.173", 4.40mm Width)	在庫16,710
TC7WT125FUTE12LF	Toshiba Semiconductor and Storage	IC BUS BUFFER DUAL NON-INV SM8 Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 6mA, 6mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8	パッケージ: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	在庫75,282
DF3A6.8LFU,LF	Toshiba Semiconductor and Storage	TVS DIODE 5VWM USM Type: Zener Unidirectional Channels: 2 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V Voltage - Breakdown (Min): 6.5V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫57,012
TLP731(D4-GR,F)	Toshiba Semiconductor and Storage	OPTOISO 4KV TRANS W/BASE 6DIP Number of Channels: 1 Voltage - Isolation: 4000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor with Base Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	パッケージ: 6-DIP (0.300", 7.62mm)	在庫8,460
TCR3DF185,LM(CT	Toshiba Semiconductor and Storage	300MA LDO VOUT=1.85V DROPOUT=230 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.85V Voltage - Output (Max): - Voltage Dropout (Max): 0.4V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫4,400
TCR2EE295,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT2.95V DROPOUT180MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫7,632
RN1116-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: -	在庫18,000
SSM6N813R-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 100V 3.5A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	パッケージ: -	在庫24,597
2SC3303-Y-T6L1-NQ	Toshiba Semiconductor and Storage	TRANS NPN 80V 5A PW-MOLD Transistor Type: NPN Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Power - Max: 1 W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: PW-MOLD	パッケージ: -	在庫3,054
RN1708JE-TE85L-F	Toshiba Semiconductor and Storage	NPN X 2 BRT Q1BSR=22KOHM Q1BER=4 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	パッケージ: -	在庫270
RN2106-LF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: -	在庫8,400
RN2705-LF	Toshiba Semiconductor and Storage	PNPX2 BRT Q1BSR2.2KOHM Q1BER47KO Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	パッケージ: -	在庫7,896
TK62Z60X-S1F	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3.1mA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-4L(T) Package / Case: TO-247-4	パッケージ: -	在庫72
RN1307-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	パッケージ: -	在庫8,610

2SK880-BL(TE85L,F)

Toshiba Semiconductor and Storage

JFET N-CH 50V 0.1W USM

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

パッケージ: SC-70, SOT-323

在庫25,356

TPCA8A04-H(TE12L,Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 44A 8SOP ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫5,376

SSM6H19NU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 2A 6UDFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.2V
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFN (2x2)
Package / Case: 6-UDFN Exposed Pad

パッケージ: 6-UDFN Exposed Pad

在庫4,992

TK8P60W5,RVQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 8A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 560 mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫17,526

SSM3K339R,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 2A SOT-23F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185 mOhm @ 1A, 8V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

パッケージ: SOT-23-3 Flat Leads

在庫334,788

2SC6010(T2MITUM,FM

Toshiba Semiconductor and Storage

TRANS NPN 1A 600V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 600V
Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

パッケージ: SC-71

在庫6,576

2SC4793,WNLF(J

Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

パッケージ: TO-220-3 Full Pack

在庫2,448

RN1961(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫7,568

1SS424(TPL3,F)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 200MA SSM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 20V
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)

パッケージ: SC-75, SOT-416

在庫2,528

TA48L033F(TE12L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 150MA PWMINI

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 16V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 100mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 800µA ~ 5mA
PSRR: 68dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI (SOT-89)

パッケージ: TO-243AA

在庫12,540

TCK108AG,LF

Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH 4WCSP

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.1 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Rds On (Typ): 34 mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WCSPD (0.79x0.79)

パッケージ: 4-UFBGA, WLCSP

在庫47,124

TCK22973G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.1 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Rds On (Typ): 25 mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UFBGA, WLCSP
Supplier Device Package: 6-WCSPE (0.80x1.2)

パッケージ: 6-UFBGA, WLCSP

在庫48,456

TC7W32FKTE85LF

Toshiba Semiconductor and Storage

IC GATE OR 2CH 2-INP US8

Logic Type: OR Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: US8
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

パッケージ: 8-VFSOP (0.091", 2.30mm Width)

在庫2,464

TC7SZ14FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE USV L-MOS

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: Schmitt Trigger
Voltage - Supply: 1.65 V ~ 5.5 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: 0.2 V ~ 1.2 V
Logic Level - High: 1.4 V ~ 3.6 V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

パッケージ: 5-TSSOP, SC-70-5, SOT-353

在庫5,408

TC74HC4050AFTEL

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 6V 16TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

在庫16,710

TC7WT125FUTE12LF

Toshiba Semiconductor and Storage

IC BUS BUFFER DUAL NON-INV SM8

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 6mA, 6mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: SM8

パッケージ: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

在庫75,282

DF3A6.8LFU,LF

Toshiba Semiconductor and Storage

TVS DIODE 5VWM USM

Type: Zener
Unidirectional Channels: 2
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫57,012

TLP731(D4-GR,F)

Toshiba Semiconductor and Storage

OPTOISO 4KV TRANS W/BASE 6DIP

Number of Channels: 1
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor with Base
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP

パッケージ: 6-DIP (0.300", 7.62mm)

在庫8,460

TCR3DF185,LM(CT

Toshiba Semiconductor and Storage

300MA LDO VOUT=1.85V DROPOUT=230

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.85V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.4V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫4,400

TCR2EE295,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT2.95V DROPOUT180MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫7,632

RN1116-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: -

在庫18,000

SSM6N813R-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Power - Max: 1.5W (Ta)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

パッケージ: -

在庫24,597

2SC3303-Y-T6L1-NQ

Toshiba Semiconductor and Storage

TRANS NPN 80V 5A PW-MOLD

Transistor Type: NPN
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Power - Max: 1 W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PW-MOLD

パッケージ: -

在庫3,054

RN1708JE-TE85L-F

Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=22KOHM Q1BER=4

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

パッケージ: -

在庫270

RN2106-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: -

在庫8,400

RN2705-LF

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR2.2KOHM Q1BER47KO

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

パッケージ: -

在庫7,896

TK62Z60X-S1F

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L(T)
Package / Case: TO-247-4

パッケージ: -

在庫72

RN1307-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

パッケージ: -

在庫8,610