ページ 21 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
2SK879-Y(TE85L,F)	Toshiba Semiconductor and Storage	JFET N-CH 0.1W USM FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫25,206
TPC8133,LQ(S	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 9A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫8,760
TP86R203NL,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 19A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫4,864
SSM6L36FE,LM	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.5A/0.33A ES6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	パッケージ: SOT-563, SOT-666	在庫35,052
2SC2712-Y,LF	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫299,178
RN1413(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.2W SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫24,060
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫180,000
RN4902FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: SOT-563, SOT-666	在庫3,952
RN2971(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫29,952
RN4988(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫25,002
CRG01(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 100V 700MA SFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: SOD-123F	在庫4,064
TCR3DF25,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 2.5V 300MA SOT25 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.23V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 65µA ~ 78µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-25	パッケージ: SC-74A, SOT-753	在庫24,450
TCR2LF12,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1.2V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫25,212
TB6584AFNG	Toshiba Semiconductor and Storage	IC MOTOR CONTROLLER PAR 30SSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Commutation, Direction Management Output Configuration: Pre-Driver - Half Bridge (3) Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: Fan Controller Current - Output: - Voltage - Supply: 6 V ~ 16.5 V Voltage - Load: - Operating Temperature: -30°C ~ 115°C (TA) Mounting Type: Surface Mount Package / Case: 30-LSSOP (0.220", 5.60mm Width) Supplier Device Package: 30-SSOP	パッケージ: 30-LSSOP (0.220", 5.60mm Width)	在庫51,564
TC78B006FNG,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PWM 16SSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Commutation, Direction Management Output Configuration: Pre-Driver - Half Bridge (2) Interface: PWM Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: - Voltage - Supply: 3.5 V ~ 16 V Voltage - Load: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-SSOP	パッケージ: 16-LSSOP (0.173", 4.40mm Width)	在庫23,532
TC74LCX86FTEL	Toshiba Semiconductor and Storage	IC GATE XOR 4CH 2-INP 14-TSSOP Logic Type: XOR (Exclusive OR) Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 1.65 V ~ 3.6 V Current - Quiescent (Max): 10µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	パッケージ: 14-TSSOP (0.173", 4.40mm Width)	在庫2,416
TC4081BF(EL,N,F)	Toshiba Semiconductor and Storage	IC GATE AND 4CH 2-INP 14SOP Logic Type: AND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 3 V ~ 18 V Current - Quiescent (Max): 1µA Current - Output High, Low: 3.4mA, 3.4mA Logic Level - Low: 1.5 V ~ 4 V Logic Level - High: 3.5 V ~ 11 V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOP Package / Case: 14-SOIC (0.209", 5.30mm Width)	パッケージ: 14-SOIC (0.209", 5.30mm Width)	在庫33,528
TLP130GBF	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-MFSOP Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor with Base Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads Supplier Device Package: 6-MFSOP, 5 Lead	パッケージ: 6-SOIC (0.173", 4.40mm Width) 5 Leads	在庫8,496
TLP293(GRH-TPL,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 150% @ 500µA Current Transfer Ratio (Max): 300% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm) Supplier Device Package: 4-SO	パッケージ: 4-SOIC (0.179", 4.55mm)	在庫3,114
TLP292-4(LA,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Current Transfer Ratio (Max): 600% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	パッケージ: 16-SOIC (0.179", 4.55mm Width)	在庫8,910
TLP632(GB,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 6-DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	パッケージ: 6-DIP (0.300", 7.62mm)	在庫15,456
TLP2468(TP,F)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV OPN COLLECTOR 8SO Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 15kV/µs Input Type: DC Output Type: Open Collector Current - Output / Channel: 25mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫50,832
TLP350(TP1,F)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV GATE DRIVER 8SMD Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): - Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 2A, 2A Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.6V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SMD Approvals: UR	パッケージ: 8-SMD, Gull Wing	在庫917,400
TMPM330FYFG(B)	Toshiba Semiconductor and Storage	INTEGRATED CIRCUIT MICROCONTROLL Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,328
TCR2DG34-LF	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) IOUT: 200MA PD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.4V Voltage - Output (Max): - Voltage Dropout (Max): 0.11V @ 100mA Current - Output: 200mA Current - Quiescent (Iq): 70 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WCSP (0.79x0.79)	パッケージ: -	Request a Quote
TC7WZ32FK-LJ-CT	Toshiba Semiconductor and Storage	IC GATE OR 2CH 2-INP 8SSOP Logic Type: OR Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Max): 1 µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 3.7ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 8-SSOP Package / Case: 8-VFSOP (0.091", 2.30mm Width)	パッケージ: -	在庫9,000
TRS6E65H-S1Q	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 6A TO-220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 70 µA @ 650 V Capacitance @ Vr, F: 392pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C	パッケージ: -	在庫1,200
2SK3700-F	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 5A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	パッケージ: -	在庫57

2SK879-Y(TE85L,F)

Toshiba Semiconductor and Storage

JFET N-CH 0.1W USM

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫25,206

TPC8133,LQ(S

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 9A 8SOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
Vgs (Max): +20V, -25V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 4.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫8,760

TP86R203NL,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 19A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫4,864

SSM6L36FE,LM

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A/0.33A ES6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

パッケージ: SOT-563, SOT-666

在庫35,052

2SC2712-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫299,178

RN1413(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫24,060

2SC5065-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫180,000

RN4902FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: SOT-563, SOT-666

在庫3,952

RN2971(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫29,952

RN4988(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫25,002

CRG01(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 100V 700MA SFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: SOD-123F

在庫4,064

TCR3DF25,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 2.5V 300MA SOT25

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.23V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 65µA ~ 78µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-25

パッケージ: SC-74A, SOT-753

在庫24,450

TCR2LF12,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.2V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫25,212

TB6584AFNG

Toshiba Semiconductor and Storage

IC MOTOR CONTROLLER PAR 30SSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Commutation, Direction Management
Output Configuration: Pre-Driver - Half Bridge (3)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: Fan Controller
Current - Output: -
Voltage - Supply: 6 V ~ 16.5 V
Voltage - Load: -
Operating Temperature: -30°C ~ 115°C (TA)
Mounting Type: Surface Mount
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Supplier Device Package: 30-SSOP

パッケージ: 30-LSSOP (0.220", 5.60mm Width)

在庫51,564

TC78B006FNG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PWM 16SSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Commutation, Direction Management
Output Configuration: Pre-Driver - Half Bridge (2)
Interface: PWM
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: -
Voltage - Supply: 3.5 V ~ 16 V
Voltage - Load: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-SSOP

パッケージ: 16-LSSOP (0.173", 4.40mm Width)

在庫23,532

TC74LCX86FTEL

Toshiba Semiconductor and Storage

IC GATE XOR 4CH 2-INP 14-TSSOP

Logic Type: XOR (Exclusive OR)
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65 V ~ 3.6 V
Current - Quiescent (Max): 10µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

パッケージ: 14-TSSOP (0.173", 4.40mm Width)

在庫2,416

TC4081BF(EL,N,F)

Toshiba Semiconductor and Storage

IC GATE AND 4CH 2-INP 14SOP

Logic Type: AND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 3 V ~ 18 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 3.4mA, 3.4mA
Logic Level - Low: 1.5 V ~ 4 V
Logic Level - High: 3.5 V ~ 11 V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOP
Package / Case: 14-SOIC (0.209", 5.30mm Width)

パッケージ: 14-SOIC (0.209", 5.30mm Width)

在庫33,528

TLP130GBF

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-MFSOP

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor with Base
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
Supplier Device Package: 6-MFSOP, 5 Lead

パッケージ: 6-SOIC (0.173", 4.40mm Width) 5 Leads

在庫8,496

TLP293(GRH-TPL,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 500µA
Current Transfer Ratio (Max): 300% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 4-SOIC (0.179", 4.55mm)
Supplier Device Package: 4-SO

パッケージ: 4-SOIC (0.179", 4.55mm)

在庫3,114

TLP292-4(LA,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Current Transfer Ratio (Max): 600% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

パッケージ: 16-SOIC (0.179", 4.55mm Width)

在庫8,910

TLP632(GB,F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 6-DIP

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP

パッケージ: 6-DIP (0.300", 7.62mm)

在庫15,456

TLP2468(TP,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV OPN COLLECTOR 8SO

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 15kV/µs
Input Type: DC
Output Type: Open Collector
Current - Output / Channel: 25mA
Data Rate: 20MBd
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Rise / Fall Time (Typ): 30ns, 30ns
Voltage - Forward (Vf) (Typ): 1.57V
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫50,832

TLP350(TP1,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 8SMD

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): -
Rise / Fall Time (Typ): 15ns, 8ns
Current - Output High, Low: 2A, 2A
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.6V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: 8-SMD
Approvals: UR

パッケージ: 8-SMD, Gull Wing

在庫917,400

TMPM330FYFG(B)

Toshiba Semiconductor and Storage

INTEGRATED CIRCUIT MICROCONTROLL

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,328

TCR2DG34-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.4V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.11V @ 100mA
Current - Output: 200mA
Current - Quiescent (Iq): 70 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WCSP (0.79x0.79)

パッケージ: -

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TC7WZ32FK-LJ-CT

Toshiba Semiconductor and Storage

IC GATE OR 2CH 2-INP 8SSOP

Logic Type: OR Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 3.7ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SSOP
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

パッケージ: -

在庫9,000

TRS6E65H-S1Q

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 6A TO-220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C

パッケージ: -

在庫1,200

2SK3700-F

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 5A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)
Package / Case: TO-3P-3, SC-65-3

パッケージ: -

在庫57