ページ 46 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
2SK3128(Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 60A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	パッケージ: TO-3P-3, SC-65-3	在庫5,808
TK72E12N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 120V 72A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 72A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 36A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫6,080
TPCA8057-H,LQ(M	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 42A 8SOP-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 21A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫4,304
TPC8065-H,LQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 13A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫149,040
2SK1828TE85LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 50MA S-MINI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 3V Vgs (Max): 10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 40 Ohm @ 10mA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫3,440
SSM3K318R,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 2.5A TSM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 107 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	パッケージ: SOT-23-3 Flat Leads	在庫50,856
TPW1R306PL,L1Q	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerWDFN	パッケージ: 8-PowerWDFN	在庫48,732
2SD2695,T6F(M	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫7,824
2SC2235(T6KMAT,F,M	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫3,232
RN2314(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W USM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫6,416
RN2901FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: SOT-563, SOT-666	在庫6,896
RN2911FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: SOT-563, SOT-666	在庫4,336
TA78L008AP,WNLF(J	Toshiba Semiconductor and Storage	IC REG LINEAR 150MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -30°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	パッケージ: TO-226-3, TO-92-3 Long Body	在庫5,152
TCR2EF15,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1.5V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.5V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫3,728
TB6643KQ,8	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 7HSIP Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Bi-CMOS Step Resolution: - Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 10 V ~ 45 V Voltage - Load: 10 V ~ 45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 7-SIP, Exposed Tab Supplier Device Package: 7-HSIP	パッケージ: 7-SIP, Exposed Tab	在庫7,500
TD62783AFG,S,EL	Toshiba Semiconductor and Storage	IC DRIVER DARL SOURCE 8CH 18-SOP Type: Driver Protocol: - Number of Drivers/Receivers: 8/0 Duplex: - Receiver Hysteresis: - Data Rate: - Voltage - Supply: 5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 18-SOIC (0.276", 7.00mm Width) Supplier Device Package: 18-SOP	パッケージ: 18-SOIC (0.276", 7.00mm Width)	在庫5,648
TLP3042SCF	Toshiba Semiconductor and Storage	OPTOISOLATOR 5KV TRIAC 6DIP 5L Output Type: Triac Zero Crossing Circuit: Yes Number of Channels: 1 Voltage - Isolation: 5000Vrms Voltage - Off State: 400V Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 100mA Current - Hold (Ih): 600µA (Typ) Turn On Time: - Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads Supplier Device Package: 6-DIP (Cut), 5 Lead Approvals: BSI, SEMKO, UR	パッケージ: 6-DIP (0.300", 7.62mm), 5 Leads	在庫14,958
TLP126(F)	Toshiba Semiconductor and Storage	OPTOISOLTR 3.75KV TRANS 6-MFSOP Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 1mA Current Transfer Ratio (Max): 1200% @ 1mA Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-MFSOP, 4 Lead	パッケージ: 6-SMD (4 Leads), Gull Wing	在庫74,448
TB67S142HG	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 25HZIP Motor Type - Stepper: Unipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 40 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 25-SIP Formed Leads Supplier Device Package: 25-HZIP	パッケージ: 25-SIP Formed Leads	在庫4,240
74HC151D	Toshiba Semiconductor and Storage	IC MULTIPLEXER 8INPUT 16SOIC Type: Multiplexer Circuit: 1 x 8:1 Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 125°C Mounting Type: - Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.154", 3.90mm Width)	在庫22,200
SSM6K204FE-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 2A ES6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: ES6 Package / Case: SOT-563, SOT-666	パッケージ: -	Request a Quote
2SC6000-TE16L1-NQ	Toshiba Semiconductor and Storage	2SC6000(TE16L1,NQ) Transistor Type: NPN Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V Power - Max: 20 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	パッケージ: -	Request a Quote
RN2302-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	パッケージ: -	Request a Quote
XPH6R30ANB-L1XHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 45A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: -	在庫27,522
TPN2R805PL-L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 45V 80A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.67W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.1x3.1) Package / Case: 8-PowerVDFN	パッケージ: -	在庫14,634
TTD1509B-Q-S	Toshiba Semiconductor and Storage	TRANSISTOR NPN TO126N Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
TC78H660FTG-EL	Toshiba Semiconductor and Storage	2-CH BRUSHED MOTOR DRIVERS AT 20 Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: - Technology: DMOS Step Resolution: - Applications: General Purpose Current - Output: 2A Voltage - Supply: 1.5V ~ 5.5V Voltage - Load: 2.5V ~ 16V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-VQFN (3x3)	パッケージ: -	在庫3
SSM3K127TU-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 2A UFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	パッケージ: -	在庫5,142

2SK3128(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 60A TO-3PN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)
Package / Case: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

在庫5,808

TK72E12N1,S1X

Toshiba Semiconductor and Storage

MOSFET N CH 120V 72A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 60V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 36A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫6,080

TPCA8057-H,LQ(M

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 42A 8SOP-ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 21A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫4,304

TPC8065-H,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 13A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 6.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫149,040

2SK1828TE85LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 50MA S-MINI

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 3V
Vgs (Max): 10V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 40 Ohm @ 10mA, 2.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-59
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫3,440

SSM3K318R,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 2.5A TSM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 107 mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

パッケージ: SOT-23-3 Flat Leads

在庫50,856

TPW1R306PL,L1Q

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-DSOP Advance
Package / Case: 8-PowerWDFN

パッケージ: 8-PowerWDFN

在庫48,732

2SD2695,T6F(M

Toshiba Semiconductor and Storage

TRANS NPN 2A 60V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫7,824

2SC2235(T6KMAT,F,M

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫3,232

RN2314(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫6,416

RN2901FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: SOT-563, SOT-666

在庫6,896

RN2911FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: SOT-563, SOT-666

在庫4,336

TA78L008AP,WNLF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -30°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

在庫5,152

TCR2EF15,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.5V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.5V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫3,728

TB6643KQ,8

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 7HSIP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel
Technology: Bi-CMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 10 V ~ 45 V
Voltage - Load: 10 V ~ 45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 7-SIP, Exposed Tab
Supplier Device Package: 7-HSIP

パッケージ: 7-SIP, Exposed Tab

在庫7,500

TD62783AFG,S,EL

Toshiba Semiconductor and Storage

IC DRIVER DARL SOURCE 8CH 18-SOP

Type: Driver
Protocol: -
Number of Drivers/Receivers: 8/0
Duplex: -
Receiver Hysteresis: -
Data Rate: -
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Supplier Device Package: 18-SOP

パッケージ: 18-SOIC (0.276", 7.00mm Width)

在庫5,648

TLP3042SCF

Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRIAC 6DIP 5L

Output Type: Triac
Zero Crossing Circuit: Yes
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Voltage - Off State: 400V
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Current - On State (It (RMS)) (Max): 100mA
Current - Hold (Ih): 600µA (Typ)
Turn On Time: -
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Supplier Device Package: 6-DIP (Cut), 5 Lead
Approvals: BSI, SEMKO, UR

パッケージ: 6-DIP (0.300", 7.62mm), 5 Leads

在庫14,958

TLP126(F)

Toshiba Semiconductor and Storage

OPTOISOLTR 3.75KV TRANS 6-MFSOP

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Current Transfer Ratio (Max): 1200% @ 1mA
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-MFSOP, 4 Lead

パッケージ: 6-SMD (4 Leads), Gull Wing

在庫74,448

TB67S142HG

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 25HZIP

Motor Type - Stepper: Unipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 40 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Supplier Device Package: 25-HZIP

パッケージ: 25-SIP Formed Leads

在庫4,240

74HC151D

Toshiba Semiconductor and Storage

IC MULTIPLEXER 8INPUT 16SOIC

Type: Multiplexer
Circuit: 1 x 8:1
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: -
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.154", 3.90mm Width)

在庫22,200

SSM6K204FE-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 2A ES6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: ES6
Package / Case: SOT-563, SOT-666

パッケージ: -

Request a Quote

2SC6000-TE16L1-NQ

Toshiba Semiconductor and Storage

2SC6000(TE16L1,NQ)

Transistor Type: NPN
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Power - Max: 20 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

パッケージ: -

Request a Quote

RN2302-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

パッケージ: -

Request a Quote

XPH6R30ANB-L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 45A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: -

在庫27,522

TPN2R805PL-L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 45V 80A 8TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 45 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Package / Case: 8-PowerVDFN

パッケージ: -

在庫14,634

TTD1509B-Q-S

Toshiba Semiconductor and Storage

TRANSISTOR NPN TO126N

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

TC78H660FTG-EL

Toshiba Semiconductor and Storage

2-CH BRUSHED MOTOR DRIVERS AT 20

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: -
Technology: DMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 1.5V ~ 5.5V
Voltage - Load: 2.5V ~ 16V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-VQFN (3x3)

パッケージ: -

在庫3

SSM3K127TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2A UFM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UFM
Package / Case: 3-SMD, Flat Leads

パッケージ: -

在庫5,142