Toshiba Semiconductor and Storage 製品

2SK2989,T6F(J

Toshiba Semiconductor and Storage

MOSFET N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-92MOD
• Package / Case: TO-226-3, TO-92-3 Long Body

パッケージ: TO-226-3, TO-92-3 Long Body

2SC5201,F(J

Toshiba Semiconductor and Storage

TRANS NPN 50MA 600V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 600V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
• Power - Max: 900mW
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

2SB1457(TE6,F,M)

Toshiba Semiconductor and Storage

TRANS PNP 2A 100V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
• Power - Max: 900mW
• Frequency - Transition: 50MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

2SA1587-GR,LF

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A USM

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 100MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

パッケージ: SC-70, SOT-323

2SC4215-O(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 30V 20MA SC70

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Frequency - Transition: 550MHz
• Noise Figure (dB Typ @ f): 5dB @ 100MHz
• Gain: 23dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

パッケージ: SC-70, SOT-323

RN4907(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

TRS12E65C,S1Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 650V 12A TO220-2L

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 12A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 90µA @ 170V
• Capacitance @ Vr, F: 65pF @ 650V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2L
• Operating Temperature - Junction: 175°C (Max)

パッケージ: TO-220-2

TA78L015AP,6FNCF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

TA48033BF(T6L1,NQ)

Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 1A PW-MOLD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.69V @ 1A (Typ)
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.7mA ~ 20mA
• PSRR: 62dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

TA58M10F(TE16L1,NQ

Toshiba Semiconductor and Storage

IC REG LINEAR 10V 500MA PW-MOLD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 29V
• Voltage - Output (Min/Fixed): 10V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.65V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.2mA ~ 80mA
• PSRR: -
• Control Features: -
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

TC7WPB8306L8X,LF

Toshiba Semiconductor and Storage

IC BUS SWITCH SPST DUAL CST8

• Type: Bus Switch
• Circuit: 2 x 1:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Dual Supply
• Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-UFQFN
• Supplier Device Package: MP8

パッケージ: 8-UFQFN

74HC238D(BJ)

Toshiba Semiconductor and Storage

IC 3:8 LINE DECODER 16SOIC

• Type: Decoder
• Circuit: 1 x 3:8
• Independent Circuits: 1
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: -
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.154", 3.90mm Width)

TC74VHCT573AFTEL

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 4.5 V ~ 5.5 V
• Independent Circuits: 1
• Delay Time - Propagation: 5.1ns
• Current - Output High, Low: 8mA, 8mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

パッケージ: 20-TSSOP (0.173", 4.40mm Width)

TC7SZ32FE,LJ(CT

Toshiba Semiconductor and Storage

IC GATE OR 1CH 2-INP ESV

• Logic Type: OR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: ESV
• Package / Case: SOT-553

パッケージ: SOT-553

74HCT02D(BJ)

Toshiba Semiconductor and Storage

IC GATE NOR QUAD 2 IN 14SOIC

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 16ns @ 5.5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOIC
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

パッケージ: 14-SOIC (0.154", 3.90mm Width)

TC74VHC174FTELM

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 16TSSOP

• Function: Master Reset
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 6
• Clock Frequency: 120MHz
• Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 4pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

TC7WBL3305CFK,LF

Toshiba Semiconductor and Storage

IC USB SWITCH SPST DUAL US8

• Applications: -
• Multiplexer/Demultiplexer Circuit: -
• Switch Circuit: -
• Number of Channels: 2
• On-State Resistance (Max): 19 Ohm
• Voltage - Supply, Single (V+): 1.65 V ~ 3.6 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: -
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: 8-SSOP

パッケージ: 8-VFSOP (0.091", 2.30mm Width)

TL1L4-NW1,LCS

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

• Color: White, Cool
• CCT (K): 5000K
• Flux @ 85°C, Current - Test: 135 lm (120 lm ~ 150 lm)
• Flux @ 25°C, Current - Test: -
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.8V
• Lumens/Watt @ Current - Test: 138 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 1.5A
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.085" (2.15mm)

パッケージ: 1414 (3535 Metric)

DF6D7M1N,LF

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 12VC 6DFN

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 2
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 12V (Typ)
• Current - Peak Pulse (10/1000µs): 1A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 0.3pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 6-UFDFN
• Supplier Device Package: 6-DFN (1.25x1.0)

パッケージ: 6-UFDFN

TLP176A(F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER GAAS IRED/FET 4-SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 2 Ohm
• Load Current: 400mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

パッケージ: 4-SOP (0.173", 4.40mm)

TLP292-4(4LGBTRE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

• Number of Channels: 4
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 500µA
• Current Transfer Ratio (Max): 600% @ 500µA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

パッケージ: 16-SOIC (0.179", 4.55mm Width)

TB62215AFG,C8,EL

Toshiba Semiconductor and Storage

STEPPER MOTOR DRIVER, 40V/2.0A,

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

TK1R5R04PB-LXGQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 160A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 205W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK+
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

TCR2LE115-LM-CT

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.15V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

パッケージ: -

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2SA1162-Y-LXHF

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 200 mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

パッケージ: -

TK8A25DA-S4X

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250 V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 500mOhm @ 3.8A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

パッケージ: -

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RN1911-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

パッケージ: -

RN1316-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

パッケージ: -

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