ページ 70 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
TPCC8005-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 26A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Package / Case: 8-VDFN Exposed Pad	パッケージ: 8-VDFN Exposed Pad	在庫4,256
TK13E25D,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 13A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫4,448
TPC8066-H,LQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 11A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫3,424
SSM6K781G,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 12V 7A 6WCSP6C FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WCSPC (1.5x1.0) Package / Case: 6-UFBGA, WLCSP	パッケージ: 6-UFBGA, WLCSP	在庫2,528
SSM6L11TU(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.5A UF6 S FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 145 mOhm @ 250MA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	パッケージ: 6-SMD, Flat Leads	在庫3,456
2SC2235-Y(MBSH1,FM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫5,680
RN1101MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SOT723 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	パッケージ: SOT-723	在庫84,552
RN2966FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: SOT-563, SOT-666	在庫4,752
RN1907,LF	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.2W US6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫25,206
TAR5S40(TE85L,F)	Toshiba Semiconductor and Storage	IC REG LINEAR 200MA SMV Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫28,980
TCR2DG18,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 1.8V 200MA 4WCSP Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 70µA PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSP (0.79x0.79)	パッケージ: 4-XFBGA, WLCSP	在庫29,898
TBD62502AFNG,EL	Toshiba Semiconductor and Storage	IC LOAD SWITCH 7CH 0.3A 16SSOP Switch Type: General Purpose Number of Outputs: 7 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.75A Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-SSOP	パッケージ: 16-LSSOP (0.173", 4.40mm Width)	在庫18,150
TC58BVG2S0HTA00	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫12,864
TC7S00FU,LF	Toshiba Semiconductor and Storage	IC GATE NAND 1CH 2-INP USV Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 2.6mA, 2.6mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	パッケージ: 5-TSSOP, SC-70-5, SOT-353	在庫4,464
74HC273D(BJ)	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 20SOIC Function: Master Reset Type: D-Type Output Type: Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 66MHz Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Iq): 4µA Input Capacitance: 3pF Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width)	パッケージ: 20-SOIC (0.295", 7.50mm Width)	在庫20,628
TC7SH125F,LF	Toshiba Semiconductor and Storage	IC BUS BUFF DVR TRI-ST 5SSOP Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫6,768
TC358748XBG(EL)	Toshiba Semiconductor and Storage	CMOS MIPI CSI-2 TO PARALLEL Applications: Camera Interface: SPI Voltage - Supply: 1.8 V ~ 3.3 V Package / Case: 80-VFBGA Supplier Device Package: 80-VFBGA (7x7) Mounting Type: Surface Mount	パッケージ: 80-VFBGA	在庫3,472
LTA121C32SF	Toshiba Semiconductor and Storage	LCD 12.1INCH 800X600 SVGA LVDS Display Type: TFT - Color Display Mode: Transmissive Touchscreen: - Diagonal Screen Size: 12.1" (307.34mm) Viewing Area: 246.00mm W x 184.50mm H Backlight: CCFL Dot Pixels: 800 x 600 (SVGA) Interface: LVDS Graphics Color: Red, Green, Blue (RGB) Background Color: -	パッケージ: -	在庫4,986
DF2B7M3SL,L3F	Toshiba Semiconductor and Storage	TVS DIODE 5.5VWM 20VC SL2-2 Type: Steering (Rail to Rail) Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5.5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Power - Peak Pulse: 50W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 0.1pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SL2	パッケージ: 0201 (0603 Metric)	在庫100,062
TLP3412(TP,F	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 400MA 60V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 1.5 Ohm Load Current: 400mA Voltage - Input: 1.27VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.096", 2.45mm) Supplier Device Package: 4-VSON Relay Type: Relay	パッケージ: 4-SMD (0.096", 2.45mm)	在庫27,522
TLP785(GB,F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	パッケージ: 4-DIP (0.300", 7.62mm)	在庫106,404
TLP701A(F)	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRIVER 6SDIP GW Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 350ns Rise / Fall Time (Typ): 50ns, 50ns Current - Output High, Low: 400mA, 400mA Current - Peak Output: 600mA Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.268", 6.80mm Width) Supplier Device Package: 6-SDIP Gull Wing Approvals: cUL, UL	パッケージ: 6-SOIC (0.268", 6.80mm Width)	在庫7,296
TBD62089APG	Toshiba Semiconductor and Storage	TRANSISTOR ARRAY INTERFACE DRIVE Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: 20-DIP (0.300", 7.62mm) Supplier Device Package: 20-DIP	パッケージ: 20-DIP (0.300", 7.62mm)	在庫17,394
RN2101MFV-L3XHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	パッケージ: -	在庫23,925
RN2106MFV-L3F-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	パッケージ: -	在庫90
HN1A01FE-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + PNP TR VCEO:-50 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: -	在庫23,994
TC62D748CFNAG-CBHJ	Toshiba Semiconductor and Storage	IC Type: Linear Topology: Shift Register Internal Switch(s): No Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Frequency: - Dimming: No Applications: LED Lighting Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-SSOP (0.154", 3.90mm Width) Supplier Device Package: 24-SSOP	パッケージ: -	Request a Quote
SSM6J825R-LF	Toshiba Semiconductor and Storage	P-CH MOSFET -30V, -20/+10V, -4A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-TSOP-F Package / Case: 6-SMD, Flat Leads	パッケージ: -	在庫17,841

TPCC8005-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 26A 8TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON
Package / Case: 8-VDFN Exposed Pad

パッケージ: 8-VDFN Exposed Pad

在庫4,256

TK13E25D,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 13A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫4,448

TPC8066-H,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫3,424

SSM6K781G,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 12V 7A 6WCSP6C

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 6V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 1.5A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-WCSPC (1.5x1.0)
Package / Case: 6-UFBGA, WLCSP

パッケージ: 6-UFBGA, WLCSP

在庫2,528

SSM6L11TU(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6 S

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 145 mOhm @ 250MA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Power - Max: 500mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

パッケージ: 6-SMD, Flat Leads

在庫3,456

2SC2235-Y(MBSH1,FM

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫5,680

RN1101MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT723

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

パッケージ: SOT-723

在庫84,552

RN2966FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: SOT-563, SOT-666

在庫4,752

RN1907,LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫25,206

TAR5S40(TE85L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 200MA SMV

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫28,980

TCR2DG18,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA 4WCSP

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 70µA
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Supplier Device Package: 4-WCSP (0.79x0.79)

パッケージ: 4-XFBGA, WLCSP

在庫29,898

TBD62502AFNG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16SSOP

Switch Type: General Purpose
Number of Outputs: 7
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.75A
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-SSOP

パッケージ: 16-LSSOP (0.173", 4.40mm Width)

在庫18,150

TC58BVG2S0HTA00

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫12,864

TC7S00FU,LF

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP USV

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 2.6mA, 2.6mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

パッケージ: 5-TSSOP, SC-70-5, SOT-353

在庫4,464

74HC273D(BJ)

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20SOIC

Function: Master Reset
Type: D-Type
Output Type: Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 66MHz
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Iq): 4µA
Input Capacitance: 3pF
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)

パッケージ: 20-SOIC (0.295", 7.50mm Width)

在庫20,628

TC7SH125F,LF

Toshiba Semiconductor and Storage

IC BUS BUFF DVR TRI-ST 5SSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫6,768

TC358748XBG(EL)

Toshiba Semiconductor and Storage

CMOS MIPI CSI-2 TO PARALLEL

Applications: Camera
Interface: SPI
Voltage - Supply: 1.8 V ~ 3.3 V
Package / Case: 80-VFBGA
Supplier Device Package: 80-VFBGA (7x7)
Mounting Type: Surface Mount

パッケージ: 80-VFBGA

在庫3,472

LTA121C32SF

Toshiba Semiconductor and Storage

LCD 12.1INCH 800X600 SVGA LVDS

Display Type: TFT - Color
Display Mode: Transmissive
Touchscreen: -
Diagonal Screen Size: 12.1" (307.34mm)
Viewing Area: 246.00mm W x 184.50mm H
Backlight: CCFL
Dot Pixels: 800 x 600 (SVGA)
Interface: LVDS
Graphics Color: Red, Green, Blue (RGB)
Background Color: -

パッケージ: -

在庫4,986

DF2B7M3SL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 5.5VWM 20VC SL2-2

Type: Steering (Rail to Rail)
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Power - Peak Pulse: 50W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: SL2

パッケージ: 0201 (0603 Metric)

在庫100,062

TLP3412(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 400MA 60V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 1.5 Ohm
Load Current: 400mA
Voltage - Input: 1.27VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: SMD (SMT) Tab
Package / Case: 4-SMD (0.096", 2.45mm)
Supplier Device Package: 4-VSON
Relay Type: Relay

パッケージ: 4-SMD (0.096", 2.45mm)

在庫27,522

TLP785(GB,F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP

パッケージ: 4-DIP (0.300", 7.62mm)

在庫106,404

TLP701A(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 6SDIP GW

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Rise / Fall Time (Typ): 50ns, 50ns
Current - Output High, Low: 400mA, 400mA
Current - Peak Output: 600mA
Voltage - Forward (Vf) (Typ): 1.57V
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 10 V ~ 30 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Supplier Device Package: 6-SDIP Gull Wing
Approvals: cUL, UL

パッケージ: 6-SOIC (0.268", 6.80mm Width)

在庫7,296

TBD62089APG

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-DIP

パッケージ: 20-DIP (0.300", 7.62mm)

在庫17,394

RN2101MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

パッケージ: -

在庫23,925

RN2106MFV-L3F-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

パッケージ: -

在庫90

HN1A01FE-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + PNP TR VCEO:-50

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: -

在庫23,994

TC62D748CFNAG-CBHJ

Toshiba Semiconductor and Storage

IC

Type: Linear
Topology: Shift Register
Internal Switch(s): No
Number of Outputs: 16
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 17V
Current - Output / Channel: 90mA
Frequency: -
Dimming: No
Applications: LED Lighting
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Supplier Device Package: 24-SSOP

パッケージ: -

Request a Quote

SSM6J825R-LF

Toshiba Semiconductor and Storage

P-CH MOSFET -30V, -20/+10V, -4A

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP-F
Package / Case: 6-SMD, Flat Leads

パッケージ: -

在庫17,841