Vishay Semiconductor Diodes Division 製品

IRKL41/14A

Vishay Semiconductor Diodes Division

SCR DBL HISCR 1400V 45A ADDAPAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 45A
• Current - On State (It (RMS)) (Max): 100A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 2)

パッケージ: ADD-A-PAK (3 + 2)

SMPZ3919B-E3/85A

Vishay Semiconductor Diodes Division

DIODE ZENER 5.6V 500MW DO220AA

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 200µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

パッケージ: DO-220AA

BZT52B4V3-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 4.3V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

BZM55B4V7-TR3

Vishay Semiconductor Diodes Division

DIODE ZENER 500MW MICROMELF

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 600 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: MicroMELF

パッケージ: 2-SMD, No Lead

TLZ39F-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 39V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 40nA @ 36.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

パッケージ: DO-213AC, MINI-MELF, SOD-80

MBRF7H45-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A ITO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 7.5A
• Voltage - Forward (Vf) (Max) @ If: 630mV @ 7.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-220-2 Full Pack, Isolated Tab

SS1P3L-E3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1.5A DO220AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-220AA

MBRB1045HE3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-31DQ09TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 3.3A C16

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 3.3A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: C-16, Axial
• Supplier Device Package: C-16
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: C-16, Axial

30WQ03FNTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3.5A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-SD1100C25C

Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 1100A B-43

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500V
• Current - Average Rectified (Io): 1100A
• Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 2500V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: B-43, PUK
• Supplier Device Package: B-43, Hockey PUK
• Operating Temperature - Junction: -

パッケージ: B-43, PUK

RS1PDHM3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-220AA

VS-2EJH01-M3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO221AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC (SlimSMA)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-221AC, SMA Flat Leads

S07J-GS08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO219AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-219AB

20CJQ060TR

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 60V SOT223

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 1A
• Voltage - Forward (Vf) (Max) @ If: 590mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

10CTQ150

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 150V TO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 150V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

VS-83CNQ080APBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 80V D618

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 80A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.5mA @ 80V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: D-61-8
• Supplier Device Package: D-61-8

パッケージ: D-61-8

VS-20CTQ150-1-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 10A TO262

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 150V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262-3

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

V40PW10C-M3/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 20A SLIMDPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 890mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: SlimDPAK

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

1N6275-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 12.1VWM 22VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12.1V
• Voltage - Breakdown (Min): 13.5V
• Voltage - Clamping (Max) @ Ipp: 22V
• Current - Peak Pulse (10/1000µs): 68.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

パッケージ: DO-201AA, DO-27, Axial

SMBJ8.5-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 8.5VWM 15.9VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.5V
• Voltage - Breakdown (Min): 9.44V
• Voltage - Clamping (Max) @ Ipp: 15.9V
• Current - Peak Pulse (10/1000µs): 37.7A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB

SA110CA-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 110VWM 177VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 177V
• Current - Peak Pulse (10/1000µs): 2.8A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

P6KE8.2AHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 7.02VWM 12.1VC DO204AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.02V
• Voltage - Breakdown (Min): 7.79V
• Voltage - Clamping (Max) @ Ipp: 12.1V
• Current - Peak Pulse (10/1000µs): 49.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

P4KE9.1A-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 7.78VWM 13.4VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.78V
• Voltage - Breakdown (Min): 8.65V
• Voltage - Clamping (Max) @ Ipp: 13.4V
• Current - Peak Pulse (10/1000µs): 29.9A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

SM6S33AHE3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 53.3VC 86A DO218AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 86A
• Power - Peak Pulse: 4600W (4.6kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-218AB
• Supplier Device Package: DO-218AB

パッケージ: DO-218AB

1.5SMC200AHE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 171VWM 274VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 171V
• Voltage - Breakdown (Min): 190V
• Voltage - Clamping (Max) @ Ipp: 274V
• Current - Peak Pulse (10/1000µs): 5.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

VTVS31GSMF-M3-08

Vishay Semiconductor Diodes Division

TVS DIODE 51VC 7.74A DO219AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30.6V
• Voltage - Breakdown (Min): 35.28V
• Voltage - Clamping (Max) @ Ipp: 51V
• Current - Peak Pulse (10/1000µs): 7.74A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 380pF @ 1MHz
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

パッケージ: DO-219AB

SMP20-M3/85A

Vishay Semiconductor Diodes Division

TVS DIODE 20VWM 35.8VC SMP

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 20V
• Voltage - Breakdown (Min): 22.2V
• Voltage - Clamping (Max) @ Ipp: 35.8V
• Current - Peak Pulse (10/1000µs): 11.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

パッケージ: DO-220AA