Cree's new gallium nitride high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) is targeted at X-band and C-band high-frequency applications.
Gallium nitride (GaN) is a wide bandgap material used in high-power, high-performance semiconductors with higher electrical performance than conventional silicon devices, and can be used in many applications including power conversion systems. High-speed GaN devices show significant performance advantages in sensitive radar equipment, satellite radios, and broadband amplifiers.
MMIC transistors provide a very wide signal bandwidth with a very small footprint. The CMPA5585025F MMIC has a minimum power output of 25W and is used for 5.5 to 8.5GHz C-band communications. The CMPA801B025F MMIC provides 25W of power from 8 to 11GHz X-band frequencies used by radar and communication systems. The high-end CMPA601C025F MMIC supports X-band operating frequencies from 6GHz to 12GHz under 35W. The device provides screw terminal mounting.
Cree GaN MMIC transistors are targeted at high-precision, high-reliability high-frequency applications such as marine and land radar systems, broadband radio amplifiers, point-to-point radio systems, satellite communications (including uplinks), and test equipment amplifiers.
