The third generation SiC MOSFETs offer higher efficiency and smaller size | Heisener Electronics
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The third generation SiC MOSFETs offer higher efficiency and smaller size

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投稿日: 2022-09-03, Toshiba Semiconductor and Storage

         Toshiba Electronics Europe Ltd. has released five new third-generation 650V SiC MOSFET devices for industrial equipment. Like earlier devices, the new third-generation mosfet contains a built-in SiC Schottky barrier with a low forward voltage (VF) -1.35V (typ) to suppress RDS(on) fluctuations for improved reliability sex. The new device can handle currents up to 100A with RDS(on) values ​​as low as 15mOhm. All devices are packaged in industry standard TO-247 packages.

      The TW015N65C, TW027N65C, TW048N65C, TW083N65C and TW107N65C are based on the company's advanced third-generation SiC process that optimizes the cell structure used in the second-generation devices. These efficient and versatile products will be used in a variety of demanding applications including SMPS and UPS for servers, data centers and communications equipment. They will also find applications in renewable energy, including photovoltaic inverters and bidirectional DC-DC converters, such as those used to charge electric vehicles.

      As a result of this advancement, the critical FoM, which is the product of drain-source on-resistance (RDS(on)) and gate-on charge (Qg), used to represent static and dynamic losses, has improved by approximately 80%. This greatly reduces losses and allows the production of power solutions with higher power density and lower operating costs.

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