ページ 7 - Cree/Wolfspeed 製品

部品番号	メーカ	説明	パッケージ	在庫
C3M0120100K	Cree/Wolfspeed	1000V, 120 MOHM, G3 SIC MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	パッケージ: TO-247-4	在庫11,004
C3M0065090J	Cree/Wolfspeed	MOSFET N-CH 900V 35A D2PAK-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	パッケージ: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	在庫62,232
C3M0065090D	Cree/Wolfspeed	MOSFET N-CH 900V 36A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V Vgs (Max): +18V, -8V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫30,360
CGHV1J006D	Cree/Wolfspeed	RF MOSFET HEMT 40V DIE Transistor Type: HEMT Frequency: 18GHz Gain: 17dB Voltage - Test: 40V Current Rating: - Noise Figure: - Current - Test: 30mA Power - Output: 6W Voltage - Rated: 100V Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫6,672
CGHV96100F2	Cree/Wolfspeed	FET RF 100V 9.6GHZ 440210 Transistor Type: HEMT Frequency: 7.9GHz ~ 9.6GHz Gain: 10.2dB Voltage - Test: 40V Current Rating: 12A Noise Figure: - Current - Test: 1A Power - Output: 131W Voltage - Rated: 100V Package / Case: 440210 Supplier Device Package: 440210	パッケージ: 440210	在庫5,312
CGHV96050F1	Cree/Wolfspeed	FET RF 100V 9.6GHZ 440210 Transistor Type: HEMT Frequency: 7.9GHz ~ 9.6GHz Gain: 17dB Voltage - Test: 40V Current Rating: 13A Noise Figure: - Current - Test: 500mA Power - Output: 32W Voltage - Rated: 100V Package / Case: 440210 Supplier Device Package: 440210	パッケージ: 440210	在庫7,104
CGHV35400F	Cree/Wolfspeed	FET RF 125V 3.5GHZ 440210 Transistor Type: HEMT Frequency: 2.9GHz ~ 3.5GHz Gain: 11dB Voltage - Test: 45V Current Rating: 24A Noise Figure: - Current - Test: 500mA Power - Output: 455W Voltage - Rated: 125V Package / Case: 440210 Supplier Device Package: 440210	パッケージ: 440210	在庫7,520
CGHV1J070D-GP4	Cree/Wolfspeed	RF MOSFET HEMT 40V DIE Transistor Type: HEMT Frequency: 18GHz Gain: 17dB Voltage - Test: 40V Current Rating: - Noise Figure: - Current - Test: 360mA Power - Output: 70W Voltage - Rated: 100V Package / Case: Die Supplier Device Package: Die	パッケージ: Die	在庫8,340
CGH40010F	Cree/Wolfspeed	FET RF 84V 6GHZ 440166 Transistor Type: HEMT Frequency: 0Hz ~ 6GHz Gain: 14.5dB Voltage - Test: 28V Current Rating: 3.5A Noise Figure: - Current - Test: 200mA Power - Output: 12.5W Voltage - Rated: 84V Package / Case: 440166 Supplier Device Package: 440166	パッケージ: 440166	在庫15,240
CGH40006P	Cree/Wolfspeed	FET RF 84V 6GHZ 440109 Transistor Type: HEMT Frequency: 0Hz ~ 6GHz Gain: 13dB Voltage - Test: 28V Current Rating: 3.5A Noise Figure: - Current - Test: 100mA Power - Output: 8W Voltage - Rated: 84V Package / Case: 440109 Supplier Device Package: 440109	パッケージ: 440109	在庫9,324
CCS020M12CM2	Cree/Wolfspeed	MOSFET 6N-CH 1200V 29.5A MODULE FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 29.5A Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V Power - Max: 167W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: Module	在庫2,096
CAS325M12HM2	Cree/Wolfspeed	MOSFET 2N-CH 1200V 444A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 444A (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V Vgs(th) (Max) @ Id: 4V @ 105mA Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3000W Operating Temperature: 175°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	パッケージ: Module	在庫6,992
CAS300M12BM2	Cree/Wolfspeed	MOSFET 2N-CH 1200V 404A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 404A Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 300A, 20V Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V Power - Max: 1660W Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module, Screw Terminals Supplier Device Package: Module	パッケージ: Module, Screw Terminals	在庫5,248
C2D05120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 17.5A TO252 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 455pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫3,328
C3D06060G-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 6A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 295pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫63,840
C3D06060F	Cree/Wolfspeed	DIODE SCHOTTKY 600V 6A TO220-F2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 294pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2 Full Pack	在庫6,512
C3D04060F	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO220-F2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2 Full Pack, Isolated Tab	在庫28,830
C3D10065E	Cree/Wolfspeed	DIODE SCHOTTKY 650V 32A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 32A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫17,982
C3D10060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫13,086
CSD01060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 1A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 80pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫109,674
C4D10120D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 1200V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 9A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 150µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	パッケージ: TO-247-3	在庫3,584
C3D20065D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io) (per Diode): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	パッケージ: TO-247-3	在庫7,216
C3D30065D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io) (per Diode): 39A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 95µA @ 650V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	パッケージ: TO-247-3	在庫9,240
CMPA601C025F-TB	Cree/Wolfspeed	EVAL BOARD FOR CMPA601C025F Type: Amplifier Frequency: 6GHz ~ 12GHz For Use With/Related Products: CMPA601C025F Supplied Contents: Partially Populated Board - Main IC Not Included	パッケージ: -	在庫3,400
CGHV1F025S-AMP1	Cree/Wolfspeed	DEMO HEMT TRANS AMP1 CGHV1F025S Type: HEMT Frequency: 0Hz ~ 15GHz For Use With/Related Products: CGHV1F025 Supplied Contents: Partially Populated Board - Main IC Not Included	パッケージ: -	在庫7,452
CGHV1F006S-AMP1	Cree/Wolfspeed	DEMO HEMT TRANS AMP1 CGHV1F006S Type: HEMT Frequency: 0Hz ~ 18GHz For Use With/Related Products: CGHV1F006 Supplied Contents: Partially Populated Board - Main IC Not Included	パッケージ: -	在庫4,518
CGHV27200-TB	Cree/Wolfspeed	EVAL BOARD FOR CGHV27200 Type: HEMT Frequency: 2.5GHz ~ 2.7GHz For Use With/Related Products: CGHV27200 Supplied Contents: Partially Populated Board - Main IC Not Included	パッケージ: -	在庫6,300
CGH40045F-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40045 Type: HEMT Frequency: 0Hz ~ 4GHz For Use With/Related Products: CGH40045F Supplied Contents: Partially Populated Board - Main IC Not Included	パッケージ: -	在庫8,136
CGHV22200-TB	Cree/Wolfspeed	EVAL BOARD FOR CGHV22200 Type: HEMT Frequency: 1.8GHz ~ 2.2GHz For Use With/Related Products: CGHV22200 Supplied Contents: Partially Populated Board - Main IC Not Included	パッケージ: -	在庫4,608
CGHV40100F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV40100F Type: FET Frequency: 500MHz ~ 2.5GHz For Use With/Related Products: CGHV40100 Supplied Contents: Partially Populated Board - Main IC Not Included	パッケージ: -	在庫4,158

C3M0120100K

Cree/Wolfspeed

1000V, 120 MOHM, G3 SIC MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4

パッケージ: TO-247-4

在庫11,004

C3M0065090J

Cree/Wolfspeed

MOSFET N-CH 900V 35A D2PAK-7

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
Vgs (Max): +19V, -8V
FET Feature: -
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

パッケージ: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

在庫62,232

C3M0065090D

Cree/Wolfspeed

MOSFET N-CH 900V 36A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs(th) (Max) @ Id: 2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
Vgs (Max): +18V, -8V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫30,360

CGHV1J006D

Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

Transistor Type: HEMT
Frequency: 18GHz
Gain: 17dB
Voltage - Test: 40V
Current Rating: -
Noise Figure: -
Current - Test: 30mA
Power - Output: 6W
Voltage - Rated: 100V
Package / Case: Die
Supplier Device Package: Die

パッケージ: Die

在庫6,672

CGHV96100F2

Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

Transistor Type: HEMT
Frequency: 7.9GHz ~ 9.6GHz
Gain: 10.2dB
Voltage - Test: 40V
Current Rating: 12A
Noise Figure: -
Current - Test: 1A
Power - Output: 131W
Voltage - Rated: 100V
Package / Case: 440210
Supplier Device Package: 440210

パッケージ: 440210

在庫5,312

CGHV96050F1

Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

Transistor Type: HEMT
Frequency: 7.9GHz ~ 9.6GHz
Gain: 17dB
Voltage - Test: 40V
Current Rating: 13A
Noise Figure: -
Current - Test: 500mA
Power - Output: 32W
Voltage - Rated: 100V
Package / Case: 440210
Supplier Device Package: 440210

パッケージ: 440210

在庫7,104

CGHV35400F

Cree/Wolfspeed

FET RF 125V 3.5GHZ 440210

Transistor Type: HEMT
Frequency: 2.9GHz ~ 3.5GHz
Gain: 11dB
Voltage - Test: 45V
Current Rating: 24A
Noise Figure: -
Current - Test: 500mA
Power - Output: 455W
Voltage - Rated: 125V
Package / Case: 440210
Supplier Device Package: 440210

パッケージ: 440210

在庫7,520

CGHV1J070D-GP4

Cree/Wolfspeed

RF MOSFET HEMT 40V DIE

Transistor Type: HEMT
Frequency: 18GHz
Gain: 17dB
Voltage - Test: 40V
Current Rating: -
Noise Figure: -
Current - Test: 360mA
Power - Output: 70W
Voltage - Rated: 100V
Package / Case: Die
Supplier Device Package: Die

パッケージ: Die

在庫8,340

CGH40010F

Cree/Wolfspeed

FET RF 84V 6GHZ 440166

Transistor Type: HEMT
Frequency: 0Hz ~ 6GHz
Gain: 14.5dB
Voltage - Test: 28V
Current Rating: 3.5A
Noise Figure: -
Current - Test: 200mA
Power - Output: 12.5W
Voltage - Rated: 84V
Package / Case: 440166
Supplier Device Package: 440166

パッケージ: 440166

在庫15,240

CGH40006P

Cree/Wolfspeed

FET RF 84V 6GHZ 440109

Transistor Type: HEMT
Frequency: 0Hz ~ 6GHz
Gain: 13dB
Voltage - Test: 28V
Current Rating: 3.5A
Noise Figure: -
Current - Test: 100mA
Power - Output: 8W
Voltage - Rated: 84V
Package / Case: 440109
Supplier Device Package: 440109

パッケージ: 440109

在庫9,324

CCS020M12CM2

Cree/Wolfspeed

MOSFET 6N-CH 1200V 29.5A MODULE

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29.5A
Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
Power - Max: 167W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: Module

在庫2,096

CAS325M12HM2

Cree/Wolfspeed

MOSFET 2N-CH 1200V 444A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V
Vgs(th) (Max) @ Id: 4V @ 105mA
Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3000W
Operating Temperature: 175°C (TJ)
Mounting Type: -
Package / Case: Module
Supplier Device Package: Module

パッケージ: Module

在庫6,992

CAS300M12BM2

Cree/Wolfspeed

MOSFET 2N-CH 1200V 404A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 404A
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 300A, 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V
Power - Max: 1660W
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module, Screw Terminals
Supplier Device Package: Module

パッケージ: Module, Screw Terminals

在庫5,248

C2D05120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 17.5A TO252

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 455pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫3,328

C3D06060G-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫63,840

C3D06060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO220-F2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 294pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2 Full Pack

在庫6,512

C3D04060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-F2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2 Full Pack, Isolated Tab

在庫28,830

C3D10065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 32A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 32A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫17,982

C3D10060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫13,086

CSD01060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 1A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫109,674

C4D10120D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 9A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 150µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

パッケージ: TO-247-3

在庫3,584

C3D20065D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 650V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io) (per Diode): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

パッケージ: TO-247-3

在庫7,216

C3D30065D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 650V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io) (per Diode): 39A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 95µA @ 650V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

パッケージ: TO-247-3

在庫9,240

CMPA601C025F-TB

Cree/Wolfspeed

EVAL BOARD FOR CMPA601C025F

Type: Amplifier
Frequency: 6GHz ~ 12GHz
For Use With/Related Products: CMPA601C025F
Supplied Contents: Partially Populated Board - Main IC Not Included

パッケージ: -

在庫3,400

CGHV1F025S-AMP1

Cree/Wolfspeed

DEMO HEMT TRANS AMP1 CGHV1F025S

Type: HEMT
Frequency: 0Hz ~ 15GHz
For Use With/Related Products: CGHV1F025
Supplied Contents: Partially Populated Board - Main IC Not Included

パッケージ: -

在庫7,452

CGHV1F006S-AMP1

Cree/Wolfspeed

DEMO HEMT TRANS AMP1 CGHV1F006S

Type: HEMT
Frequency: 0Hz ~ 18GHz
For Use With/Related Products: CGHV1F006
Supplied Contents: Partially Populated Board - Main IC Not Included

パッケージ: -

在庫4,518

CGHV27200-TB

Cree/Wolfspeed

EVAL BOARD FOR CGHV27200

Type: HEMT
Frequency: 2.5GHz ~ 2.7GHz
For Use With/Related Products: CGHV27200
Supplied Contents: Partially Populated Board - Main IC Not Included

パッケージ: -

在庫6,300

CGH40045F-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40045

Type: HEMT
Frequency: 0Hz ~ 4GHz
For Use With/Related Products: CGH40045F
Supplied Contents: Partially Populated Board - Main IC Not Included

パッケージ: -

在庫8,136

CGHV22200-TB

Cree/Wolfspeed

EVAL BOARD FOR CGHV22200

Type: HEMT
Frequency: 1.8GHz ~ 2.2GHz
For Use With/Related Products: CGHV22200
Supplied Contents: Partially Populated Board - Main IC Not Included

パッケージ: -

在庫4,608

CGHV40100F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV40100F

Type: FET
Frequency: 500MHz ~ 2.5GHz
For Use With/Related Products: CGHV40100
Supplied Contents: Partially Populated Board - Main IC Not Included

パッケージ: -

在庫4,158