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EGP10DHE3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 22pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

SRP100A-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -50°C ~ 125°C

パッケージ: DO-204AL, DO-41, Axial

MA2C71900A

Panasonic Electronic Components

DIODE SCHOTTKY 40V 500MA DO34

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 100µA @ 35V
• Capacitance @ Vr, F: 60pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34
• Operating Temperature - Junction: 125°C (Max)

パッケージ: DO-204AG, DO-34, Axial

STPS1L60

STMicroelectronics

DIODE SCHOTTKY 60V 1A DO41

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: 150°C (Max)

パッケージ: DO-204AL, DO-41, Axial

D1031SH45T

Infineon Technologies Industrial Power and Controls Americas

DIODE FAST 4500V 1120A

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

パッケージ: -

R7220806HSOO

Powerex Inc.

DIODE MODULE 800V 650A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 650A
• Voltage - Forward (Vf) (Max) @ If: 2.05V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 50mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

パッケージ: DO-200AB, B-PUK

A397N

Powerex Inc.

DIODE GEN PURP 800V 400A DO200AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 400A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: DO-200AA, A-PUK

R6011630XXYA

Powerex Inc.

DIODE GEN PURP 1.6KV 300A DO205

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 13µs
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-205AB, DO-9, Stud

VS-175BGQ045HF4

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 175A 45V POWERTAB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 175A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 175A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 45V
• Capacitance @ Vr, F: 5600pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: PowerTab?
• Supplier Device Package: PowerTab?
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: PowerTab?

SFF1608GHC0G

TSC America Inc.

DIODE, SUPER FAST, 16A, 600V, 35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-220-3 Full Pack, Isolated Tab

1N5624-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 3A SOD64

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 7.5µs
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: SOD-64, Axial

EK 19V

Sanken

DIODE SCHOTTKY 90V 1.5A AXIAL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 810mV @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: Axial

EM01A

Sanken

DIODE GEN PURP 600V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 970mV @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: Axial

SE30AFG-M3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.4A DO221AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1.4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 19pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-221AC, SMA Flat Leads

SR210 B0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 1

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AC, DO-15, Axial

RSFKLHRTG

TSC America Inc.

DIODE, FAST, 0.5A, 800V, 500NS,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-219AB

SD101AW-E3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 400MW 60V SOD123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 30mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1ns
• Current - Reverse Leakage @ Vr: 200nA @ 50V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: SOD-123

RS1GL RHG

TSC America Inc.

DIODE, FAST, 0.8A, 400V, 150NS,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-219AB

SS22T3G

ON Semiconductor

DIODE SCHOTTKY 20V 2A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AA, SMB

B530C-13-F

Diodes Incorporated

DIODE SCHOTTKY 30V 5A SMC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: 300pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

1N249R

Solid State Inc.

DIODE GEN PURP REV 100V 40A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: -

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S8GL-TP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 150pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC (DO-214AB)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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S2J-AQ

Diotec Semiconductor

IC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: -

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SURA8240T3G-VF01

onsemi

DIODE GEN PURP 400V 2A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 65 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

SK315SMA-AQ

Diotec Semiconductor

IC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 870 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA/DO-214AC
• Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: -

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SBRD8340G

onsemi

DIODE SCHOTTKY 40V 3A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: DPAK
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

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S4D02120A

SMC Diode Solutions

DIODE SIL CARB 1.2KV 2A TO220AC

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
• Capacitance @ Vr, F: 116pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC (TO-220-2)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

RURG8060-F085

onsemi

DIODE GEN PURP 600V 80A TO247-2

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 80A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 80 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 90 ns
• Current - Reverse Leakage @ Vr: 250 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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