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62-0209PBF

Infineon Technologies

DIODE SHOCTTKY

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

パッケージ: -

JAN1N647-1

Microsemi Corporation

DIODE GEN PURP 400V 400MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 400mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50nA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AH, DO-35, Axial

SS2P2LHE3/84A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A DO220AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-220AA

18TQ045STRL

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 18A D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 18A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 18A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2.5mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-1N3882

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 6A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 15µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

SBR8M100P5Q-13

Diodes Incorporated

DIODE SBR 100V 8A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI?5
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: PowerDI? 5

NRVB8H100MFSWFT1G

ON Semiconductor

DIODE SCHOTTKY 8A 100V SO8FL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN, 5 Leads
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: 8-PowerTDFN, 5 Leads

ES3B R7G

TSC America Inc.

DIODE, SUPER FAST, 3A, 100V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

FR304G B0G

TSC America Inc.

DIODE, FAST, 3A, 400V, 150NS, DO

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-201AD, Axial

SS23LHRUG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-219AB

SF15GHB0G

TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 300V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

SK26AHM2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AC, SMA

1N5392G R0G

TSC America Inc.

DIODE, 1.5A, 100V, DO-15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AC, DO-15, Axial

ES2FAHR3G

TSC America Inc.

DIODE, SUPER FAST, 2A, 300V, 35N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AC, SMA

DSI45-12A

IXYS

DIODE GEN PURP 1.2KV 45A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 45A
• Voltage - Forward (Vf) (Max) @ If: 1.28V @ 45A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20µA @ 1200V
• Capacitance @ Vr, F: 18pF @ 400V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: TO-247-2

UF4003-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

SURS8340T3G

ON Semiconductor

DIODE GP ULT FAST 400V 3A SMC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-214AB, SMC

CLL4448 TR

Central Semiconductor Corp

DIODE GEN PURP 75V 250MA SOD80

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 25nA @ 20V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80
• Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: DO-213AC, MINI-MELF, SOD-80

CD214A-B240LLF

Bourns Inc.

DIODE SCHOTTKY 40V 2A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 430mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 40V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA (DO-214AC)
• Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-214AC, SMA

PMEG2010EJ,115

Nexperia USA Inc.

DIODE SCHOTTKY 20V 1A SOD323F

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Capacitance @ Vr, F: 80pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F
• Operating Temperature - Junction: 150°C (Max)

パッケージ: SC-90, SOD-323F

SK54L_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 5A SMC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 440 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC (DO-214AB)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

JANTX1N5420US-TR

Microchip Technology

DIODE GEN PURP 600V 3A D-5B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

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GI751

NTE Electronics, Inc

DIODE GEN PURP 100V 6A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5 µs
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 150pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: Axial
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

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PG5408_R2_00001

Panjit International Inc.

DIODE GEN PURP 1KV 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

SS5P10HM3_A-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 5A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15 µA @ 100 V
• Capacitance @ Vr, F: 130pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

SKL120-AQ

Diotec Semiconductor

IC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: -

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SMBD1086LT1

onsemi

SS SOT23 SWCH DIO SPCL

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

パッケージ: -

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R50340TS

Microchip Technology

STD RECTIFIER

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

パッケージ: -

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