ページ 1084 - ダイオード - 整流器 - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RDK82685XXOO	Powerex Inc.	DIODE RECT 2600V 10000A PUCK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2600V Current - Average Rectified (Io): 10000A Voltage - Forward (Vf) (Max) @ If: 820mV @ 4000A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35µs Current - Reverse Leakage @ Vr: 300mA @ 2600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: TO-200 Variation Supplier Device Package: Hockey Puck Operating Temperature - Junction: -40°C ~ 160°C	パッケージ: TO-200 Variation	在庫3,216	2600V	10000A	820mV @ 4000A	Fast Recovery =< 500ns, > 200mA (Io)	35µs	300mA @ 2600V	-	Chassis Mount	TO-200 Variation	Hockey Puck	-40°C ~ 160°C
NTSB40200CTG	ON Semiconductor	DIODE SCHOTTKY 200V 20A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫2,464	200V	20A	1.45V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
NUR460P/L07U	WeEn Semiconductors	DIODE GEN PURP 600V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -	パッケージ: DO-201AD, Axial	在庫5,408	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-
STTH112	STMicroelectronics	DIODE GEN PURP 1.2KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: 175°C (Max)	パッケージ: DO-204AL, DO-41, Axial	在庫16,464	1200V	1A	1.9V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1200V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	175°C (Max)
10TQ035	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 760mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6mA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫36,000	35V	10A	760mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	6mA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
ISOPAC1204	Semtech Corporation	DIODE GEN PURP 400V 15A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫2,112	400V	15A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	-	-	-	-55°C ~ 175°C
VS-T70HFL60S05	Vishay Semiconductor Diodes Division	DIODE MODULE 600V 70A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	パッケージ: D-55 T-Module	在庫7,520	600V	70A	-	Fast Recovery =< 500ns, > 200mA (Io)	500ns	100µA @ 600V	-	Chassis Mount	D-55 T-Module	D-55	-
VS-MBR10T100	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 790mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫2,528	100V	10A	790mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	400pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
VB10150S-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 150V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫7,888	150V	10A	1.2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 150V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
SE70PG-M3/86A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2.9A (DC) Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-277, 3-PowerDFN	在庫36,000	400V	2.9A (DC)	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 400V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
B520CQ-13-F	Diodes Incorporated	DIODE SCHOTTKY 20V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AB, SMC	在庫2,128	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	300pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
BYV16-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 1.5A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: SOD-57, Axial	在庫6,928	1000V	1.5A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 1000V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SR110HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫3,456	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RS2GA R3G	TSC America Inc.	DIODE, FAST, 1.5A, 400V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AC, SMA	在庫3,920	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SD0603S040S0R2	AVX Corporation	DIODE SCHOTTKY 40V 200MA 0603 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 (1608 Metric) Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: 0603 (1608 Metric)	在庫7,536	40V	200mA (DC)	450mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 40V	-	Surface Mount	0603 (1608 Metric)	0603 (1608 Metric)	-55°C ~ 125°C
RFN3BM2STL	Rohm Semiconductor	DIODE GEN PURP 200V 3A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 980mV @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max)	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫26,274	200V	3A	980mV @ 3A	Standard Recovery >500ns, > 200mA (Io)	25ns	10µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	150°C (Max)
B250A-13-F	Diodes Incorporated	DIODE SCHOTTKY 50V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-214AC, SMA	在庫1,740,000	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	200pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
JAN1N6940UTK3-TR	Microchip Technology	DIODE SCHOTTKY 15V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 15 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote	15 V	150A	500 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 15 V	-	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 150°C
S3ABH	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	50 V	3A	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 50 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
VS-3C16ETOTT-M3	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
31DQ05	SMC Diode Solutions	DIODE SCHOTTKY 50V 3.3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3.3A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 50 V Capacitance @ Vr, F: 160pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: -	在庫2,586	50 V	3.3A	620 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 50 V	160pF @ 5V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
LSC06065Q8	Diodes Incorporated	DIODE SIL CARB 650V 6A DFN8080 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: DFN8080 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	Request a Quote	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	-	Surface Mount	4-PowerTSFN	DFN8080	-55°C ~ 175°C
S4280IL	Microchip Technology	DIODE GEN PURP 800V 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: -	Request a Quote	800 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 800 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
1N6304R	Microchip Technology	DIODE GEN PURP 50V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 25 µA @ 50 V Capacitance @ Vr, F: 600pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	50 V	70A	1.18 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	25 µA @ 50 V	600pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 175°C
SMD33LHE1-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE1 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	30 V	3A	420 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 30 V	-	Surface Mount	SOD-123H	SOD-123HE1	-55°C ~ 150°C
ZHCS400TA-79	Diodes Incorporated	DIODE SCHOTTKY 40V 400MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 30 V Capacitance @ Vr, F: 20pF @ 25V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -	パッケージ: -	Request a Quote	40 V	400mA	500 mV @ 400 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 30 V	20pF @ 25V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-
B240-13-G	Diodes Incorporated	DIODE SCHOTTKY 40V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 200pF @ 40V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	200pF @ 40V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
TST20U60C	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫15	60 V	10A	630 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 60 V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C

RDK82685XXOO

Powerex Inc.

DIODE RECT 2600V 10000A PUCK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2600V
Current - Average Rectified (Io): 10000A
Voltage - Forward (Vf) (Max) @ If: 820mV @ 4000A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35µs
Current - Reverse Leakage @ Vr: 300mA @ 2600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: TO-200 Variation
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -40°C ~ 160°C

パッケージ: TO-200 Variation

在庫3,216

2600V

10000A

820mV @ 4000A

Fast Recovery =< 500ns, > 200mA (Io)

35µs

300mA @ 2600V

-

Chassis Mount

TO-200 Variation

Hockey Puck

-40°C ~ 160°C

NTSB40200CTG

ON Semiconductor

DIODE SCHOTTKY 200V 20A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫2,464

200V

20A

1.45V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

NUR460P/L07U

WeEn Semiconductors

DIODE GEN PURP 600V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -

パッケージ: DO-201AD, Axial

在庫5,408

600V

4A

1.28V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

-

STTH112

STMicroelectronics

DIODE GEN PURP 1.2KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)

パッケージ: DO-204AL, DO-41, Axial

在庫16,464

1200V

1A

1.9V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 1200V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

175°C (Max)

10TQ035

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 760mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫36,000

35V

10A

760mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

6mA @ 35V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

ISOPAC1204

Semtech Corporation

DIODE GEN PURP 400V 15A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

在庫2,112

400V

15A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 400V

-

-55°C ~ 175°C

VS-T70HFL60S05

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 70A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

パッケージ: D-55 T-Module

在庫7,520

600V

70A

-

Fast Recovery =< 500ns, > 200mA (Io)

500ns

100µA @ 600V

-

Chassis Mount

D-55 T-Module

D-55

-

VS-MBR10T100

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫2,528

100V

10A

790mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

400pF @ 5V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

VB10150S-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫7,888

150V

10A

1.2V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 150V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

SE70PG-M3/86A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2.9A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2.9A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-277, 3-PowerDFN

在庫36,000

400V

2.9A (DC)

1.05V @ 7A

Standard Recovery >500ns, > 200mA (Io)

2.6µs

20µA @ 400V

76pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

B520CQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 5A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

在庫2,128

20V

5A

550mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

300pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

BYV16-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.5A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: SOD-57, Axial

在庫6,928

1000V

1.5A

1.5V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 1000V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

SR110HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫3,456

100V

1A

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

RS2GA R3G

TSC America Inc.

DIODE, FAST, 1.5A, 400V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AC, SMA

在庫3,920

400V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SD0603S040S0R2

AVX Corporation

DIODE SCHOTTKY 40V 200MA 0603

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603 (1608 Metric)
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: 0603 (1608 Metric)

在庫7,536

40V

200mA (DC)

450mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 40V

-

Surface Mount

0603 (1608 Metric)

-55°C ~ 125°C

RFN3BM2STL

Rohm Semiconductor

DIODE GEN PURP 200V 3A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫26,274

200V

3A

980mV @ 3A

Standard Recovery >500ns, > 200mA (Io)

25ns

10µA @ 200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

150°C (Max)

B250A-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 2A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-214AC, SMA

在庫1,740,000

50V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

200pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

JAN1N6940UTK3-TR

Microchip Technology

DIODE SCHOTTKY 15V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 15 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: -

Request a Quote

15 V

150A

500 mV @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 15 V

-

Surface Mount

ThinKey™3

-65°C ~ 150°C

S3ABH

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 3A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

Request a Quote

50 V

3A

1.15 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 50 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

VS-3C16ETOTT-M3

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

Request a Quote

-

31DQ05

SMC Diode Solutions

DIODE SCHOTTKY 50V 3.3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3.3A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 mA @ 50 V
Capacitance @ Vr, F: 160pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: -

在庫2,586

50 V

3.3A

620 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2 mA @ 50 V

160pF @ 5V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-40°C ~ 150°C

LSC06065Q8

Diodes Incorporated

DIODE SIL CARB 650V 6A DFN8080

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

Request a Quote

650 V

6A

1.7 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 650 V

-

Surface Mount

4-PowerTSFN

DFN8080

-55°C ~ 175°C

S4280IL

Microchip Technology

DIODE GEN PURP 800V 125A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: -

Request a Quote

800 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 800 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

1N6304R

Microchip Technology

DIODE GEN PURP 50V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Capacitance @ Vr, F: 600pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

Request a Quote

50 V

70A

1.18 V @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

25 µA @ 50 V

600pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 175°C

SMD33LHE1-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 120 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE1
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

Request a Quote

30 V

3A

420 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

120 µA @ 30 V

-

Surface Mount

SOD-123H

SOD-123HE1

-55°C ~ 150°C

ZHCS400TA-79

Diodes Incorporated

DIODE SCHOTTKY 40V 400MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Capacitance @ Vr, F: 20pF @ 25V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -

パッケージ: -

Request a Quote

40 V

400mA

500 mV @ 400 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

40 µA @ 30 V

20pF @ 25V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-

B240-13-G

Diodes Incorporated

DIODE SCHOTTKY 40V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: -

Request a Quote

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

200pF @ 40V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

TST20U60C

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 10A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫15

60 V

10A

630 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 60 V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C