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部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
150KSR5	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 150A B42 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35mA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-42 Supplier Device Package: B-42 Operating Temperature - Junction: -40°C ~ 200°C	パッケージ: B-42	在庫5,504	50V	150A	1.33V @ 471A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 50V	-	Chassis, Stud Mount	B-42	B-42	-40°C ~ 200°C
LS412460	Powerex Inc.	DIODE MODULE 2.4KV 600A POWRBLOK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2400V Current - Average Rectified (Io): 600A Voltage - Forward (Vf) (Max) @ If: 1.19V @ 1800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 2400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: POW-R-BLOK? Module Supplier Device Package: POW-R-BLOK? Module Operating Temperature - Junction: -	パッケージ: POW-R-BLOK? Module	在庫4,528	2400V	600A	1.19V @ 1800A	Standard Recovery >500ns, > 200mA (Io)	-	40mA @ 2400V	-	Chassis Mount	POW-R-BLOK? Module	POW-R-BLOK? Module	-
SCF2500	Semtech Corporation	DIODE GEN PURP 2.5KV 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 3.45V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 2500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: Axial	在庫3,328	2500V	500mA	3.45V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 2500V	-	Through Hole	Axial	-	-55°C ~ 150°C
VS-71HF100M	Vishay Semiconductor Diodes Division	DIODE STD REC NOT ISO 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	パッケージ: DO-203AB, DO-5, Stud	在庫5,920	1000V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
SR802HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: DO-201AD, Axial	在庫3,552	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SJPA-H3VR	Sanken	DIODE SCHOTTKY SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 360mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 125°C	パッケージ: 2-SMD, J-Lead	在庫6,128	30V	2A	360mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 125°C
CD214B-B240LF	Bourns Inc.	DIODE SCHOTTKY 40V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: DO-214AA, SMB	在庫3,552	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	200pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
RS1ML RUG	TSC America Inc.	DIODE, FAST, 0.8A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-219AB	在庫7,376	-	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
FR103G R1G	TSC America Inc.	DIODE, FAST, 1A, 200V, 150NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫6,704	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
C4D05120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 8.2A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8.2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 150µA @ 1200V Capacitance @ Vr, F: 390pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫6,576	1200V	8.2A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	150µA @ 1200V	390pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SS3H10-E3/57T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-214AB, SMC	在庫561,048	100V	3A	800mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 175°C
VS-20ETF02SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 20A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 100µA @ 650V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫8,784	200V	20A	1.67V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 650V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
BAS3010B03WE6327HTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 1A SOD323-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 30V Capacitance @ Vr, F: 40pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: -65°C ~ 125°C	パッケージ: SC-76, SOD-323	在庫44,532	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 30V	40pF @ 5V, 1MHz	Surface Mount	SC-76, SOD-323	PG-SOD323-2	-65°C ~ 125°C
SL115B-TP	Micro Commercial Co	DIODE SCHOTTKY 15V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 290 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 15 V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 100°C	パッケージ: -	Request a Quote	15 V	1A	290 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 15 V	300pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 100°C
S4PDHM3_B-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	200 V	4A	1.1 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	10 µA @ 200 V	30pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
ME01FA60-TE12L	KYOCERA AVX	DIODE GEN PURP 600V 1A SMA-FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫36,000	600 V	1A	1.39 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 600 V	-	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
PMEG060T030ELPEZ	Nexperia USA Inc.	DIODE SCHOTTKY 60V 3A CFP15B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Current - Reverse Leakage @ Vr: 1.8 µA @ 60 V Capacitance @ Vr, F: 560pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C (Max)	パッケージ: -	在庫40,950	60 V	3A	620 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	16 ns	1.8 µA @ 60 V	560pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15B	175°C (Max)
BAT720-QR	Nexperia USA Inc.	DIODE SCHOTTKY 40V 500MA TO236AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 35 V Capacitance @ Vr, F: 90pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Operating Temperature - Junction: 125°C	パッケージ: -	在庫8,250	40 V	500mA	550 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 35 V	90pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB	125°C
SD103BW-HE3_A-08	Vishay	SCHOTTKY DIODE SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 5 µA @ 20 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C	パッケージ: -	Request a Quote	30 V	350mA	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	5 µA @ 20 V	50pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C
RB510SM-30T2R	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 nA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max)	パッケージ: -	在庫643,611	30 V	100mA	460 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	300 nA @ 10 V	-	Surface Mount	SC-79, SOD-523	EMD2	150°C (Max)
PMEG45T10EXD-QX	Nexperia USA Inc.	DIODE SCHOTTKY 45V 1A SOD323HP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8 ns Current - Reverse Leakage @ Vr: 20 µA @ 45 V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: SOD323HP Operating Temperature - Junction: 175°C	パッケージ: -	在庫23,730	45 V	1A	520 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	8 ns	20 µA @ 45 V	130pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	SOD323HP	175°C
JAN1N5807-TR	Microchip Technology	DIODE GEN PURP 50V 6A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	50 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
SDURB1060	SMC Diode Solutions	DIODE GEN PURP 600V D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫1,785	600 V	-	2.2 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	32 ns	10 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
JANTXV1N5621-TR	Microchip Technology	DIODE GEN PURP 800V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 500 nA @ 800 V Capacitance @ Vr, F: 20pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	800 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	500 nA @ 800 V	20pF @ 12V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
JANS1N6643U	Microchip Technology	DIODE GEN PURP 125V 300MA D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 500 nA @ 150 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	125 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 150 V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 175°C
BAT64Q-13-F	Diodes Incorporated	SCHOTTKY DIODE SOT23 T&R 10K Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 2 µA @ 40 V Capacitance @ Vr, F: 6pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote	40 V	250mA	750 mV @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	2 µA @ 40 V	6pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-65°C ~ 150°C
C6D16065H	Wolfspeed, Inc.	16A, 650V SILICON CARBIDE SCHOTT Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	在庫1,290	-	-	-	-	-	-	-	-	-	-	-
SD090SB45B-T1	SMC Diode Solutions	DIODE SCHOTTKY 45V 7.5A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	Request a Quote	45 V	7.5A	640 mV @ 7.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	400pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C

150KSR5

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 150A B42

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-42
Supplier Device Package: B-42
Operating Temperature - Junction: -40°C ~ 200°C

パッケージ: B-42

在庫5,504

50V

150A

1.33V @ 471A

Standard Recovery >500ns, > 200mA (Io)

-

35mA @ 50V

-

Chassis, Stud Mount

B-42

-40°C ~ 200°C

LS412460

Powerex Inc.

DIODE MODULE 2.4KV 600A POWRBLOK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2400V
Current - Average Rectified (Io): 600A
Voltage - Forward (Vf) (Max) @ If: 1.19V @ 1800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40mA @ 2400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: POW-R-BLOK? Module
Supplier Device Package: POW-R-BLOK? Module
Operating Temperature - Junction: -

パッケージ: POW-R-BLOK? Module

在庫4,528

2400V

600A

1.19V @ 1800A

Standard Recovery >500ns, > 200mA (Io)

-

40mA @ 2400V

-

Chassis Mount

POW-R-BLOK? Module

-

SCF2500

Semtech Corporation

DIODE GEN PURP 2.5KV 500MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2500V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 3.45V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 2500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: Axial

在庫3,328

2500V

500mA

3.45V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 2500V

-

Through Hole

Axial

-

-55°C ~ 150°C

VS-71HF100M

Vishay Semiconductor Diodes Division

DIODE STD REC NOT ISO 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

パッケージ: DO-203AB, DO-5, Stud

在庫5,920

1000V

70A

1.35V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

SR802HB0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-201AD, Axial

在庫3,552

20V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

SJPA-H3VR

Sanken

DIODE SCHOTTKY SMD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 360mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: 2-SMD, J-Lead

在庫6,128

30V

2A

360mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 30V

-

Surface Mount

2-SMD, J-Lead

2-SMD

-40°C ~ 125°C

CD214B-B240LF

Bourns Inc.

DIODE SCHOTTKY 40V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-214AA, SMB

在庫3,552

40V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

200pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

RS1ML RUG

TSC America Inc.

DIODE, FAST, 0.8A, 1000V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-219AB

在庫7,376

-

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

FR103G R1G

TSC America Inc.

DIODE, FAST, 1A, 200V, 150NS, DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫6,704

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

C4D05120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 8.2A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 150µA @ 1200V
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫6,576

1200V

8.2A (DC)

1.8V @ 5A

No Recovery Time > 500mA (Io)

0ns

150µA @ 1200V

390pF @ 0V, 1MHz

Through Hole

TO-220-2

-55°C ~ 175°C

SS3H10-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-214AB, SMC

在庫561,048

100V

3A

800mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

20µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-65°C ~ 175°C

VS-20ETF02SPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 20A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.67V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫8,784

200V

20A

1.67V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

160ns

100µA @ 650V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-40°C ~ 150°C

BAS3010B03WE6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 1A SOD323-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 30V
Capacitance @ Vr, F: 40pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: SC-76, SOD-323

在庫44,532

30V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

20µA @ 30V

40pF @ 5V, 1MHz

Surface Mount

SC-76, SOD-323

PG-SOD323-2

-65°C ~ 125°C

SL115B-TP

Micro Commercial Co

DIODE SCHOTTKY 15V 1A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 290 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 100°C

パッケージ: -

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15 V

1A

290 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 mA @ 15 V

300pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 100°C

S4PDHM3_B-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 4A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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200 V

4A

1.1 V @ 4 A

Standard Recovery >500ns, > 200mA (Io)

2.5 µs

10 µA @ 200 V

30pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

ME01FA60-TE12L

KYOCERA AVX

DIODE GEN PURP 600V 1A SMA-FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫36,000

600 V

1A

1.39 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

10 µA @ 600 V

-

Surface Mount

SOD-128

-55°C ~ 150°C

PMEG060T030ELPEZ

Nexperia USA Inc.

DIODE SCHOTTKY 60V 3A CFP15B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Current - Reverse Leakage @ Vr: 1.8 µA @ 60 V
Capacitance @ Vr, F: 560pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C (Max)

パッケージ: -

在庫40,950

60 V

3A

620 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

16 ns

1.8 µA @ 60 V

560pF @ 1V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

CFP15B

175°C (Max)

BAT720-QR

Nexperia USA Inc.

DIODE SCHOTTKY 40V 500MA TO236AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Capacitance @ Vr, F: 90pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 125°C

パッケージ: -

在庫8,250

40 V

500mA

550 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 35 V

90pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

125°C

SD103BW-HE3_A-08

Vishay

SCHOTTKY DIODE SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 350mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C

パッケージ: -

Request a Quote

30 V

350mA

600 mV @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

10 ns

5 µA @ 20 V

50pF @ 0V, 1MHz

Surface Mount

SOD-123

125°C

RB510SM-30T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 nA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)

パッケージ: -

在庫643,611

30 V

100mA

460 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

300 nA @ 10 V

-

Surface Mount

SC-79, SOD-523

EMD2

150°C (Max)

PMEG45T10EXD-QX

Nexperia USA Inc.

DIODE SCHOTTKY 45V 1A SOD323HP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Current - Reverse Leakage @ Vr: 20 µA @ 45 V
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C

パッケージ: -

在庫23,730

45 V

1A

520 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

8 ns

20 µA @ 45 V

130pF @ 4V, 1MHz

Surface Mount

2-SMD, Flat Lead

SOD323HP

175°C

JAN1N5807-TR

Microchip Technology

DIODE GEN PURP 50V 6A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

Request a Quote

50 V

6A

875 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

5 µA @ 50 V

60pF @ 10V, 1MHz

Through Hole

B, Axial

-65°C ~ 175°C

SDURB1060

SMC Diode Solutions

DIODE GEN PURP 600V D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫1,785

600 V

-

2.2 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

32 ns

10 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

JANTXV1N5621-TR

Microchip Technology

DIODE GEN PURP 800V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Capacitance @ Vr, F: 20pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

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800 V

1A

1.6 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

300 ns

500 nA @ 800 V

20pF @ 12V, 1MHz

Through Hole

A, Axial

-65°C ~ 175°C

JANS1N6643U

Microchip Technology

DIODE GEN PURP 125V 300MA D-5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

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125 V

300mA

1.2 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

6 ns

500 nA @ 150 V

5pF @ 0V, 1MHz

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 175°C

BAT64Q-13-F

Diodes Incorporated

SCHOTTKY DIODE SOT23 T&R 10K

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: -

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40 V

250mA

750 mV @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

3 ns

2 µA @ 40 V

6pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

-65°C ~ 150°C

C6D16065H

Wolfspeed, Inc.

16A, 650V SILICON CARBIDE SCHOTT

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

在庫1,290

-

SD090SB45B-T1

SMC Diode Solutions

DIODE SCHOTTKY 45V 7.5A DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

Request a Quote

45 V

7.5A

640 mV @ 7.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 45 V

400pF @ 5V, 1MHz

Surface Mount

Die

-55°C ~ 175°C