ページ 1696 - ダイオード - 整流器 - シングル | ディスクリート半導体製品 | Heisener Electronics
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ダイオード - 整流器 - シングル

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部品番号
メーカ
説明
パッケージ
在庫
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot MA2S7280GL
Panasonic Electronic Components

DIODE SCHOTTKY 30V 30MA SSMINI2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 30mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 300nA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SSMini2-F4
  • Operating Temperature - Junction: 125°C (Max)
パッケージ: SC-79, SOD-523
在庫34,800
30V
30mA (DC)
1V @ 30mA
Small Signal =< 200mA (Io), Any Speed
1ns
300nA @ 30V
-
Surface Mount
SC-79, SOD-523
SSMini2-F4
125°C (Max)
15ETH03-1
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 15A TO262

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 40µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA
在庫3,248
300V
15A
1.25V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
40µA @ 300V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
-65°C ~ 175°C
R7000805XXUA
Powerex Inc.

DIODE GEN PURP 800V 550A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 550A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15µs
  • Current - Reverse Leakage @ Vr: 50mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -65°C ~ 150°C
パッケージ: DO-200AA, A-PUK
在庫4,432
800V
550A
1.2V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
15µs
50mA @ 800V
-
Chassis, Stud Mount
DO-200AA, A-PUK
DO-200AA, R62
-65°C ~ 150°C
R6221255ESOO
Powerex Inc.

DIODE MODULE 1.2KV 550A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 550A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -
パッケージ: DO-200AA, A-PUK
在庫2,048
1200V
550A
1.5V @ 800A
Standard Recovery >500ns, > 200mA (Io)
2µs
50mA @ 1200V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, R62
-
R6201030XXOO
Powerex Inc.

DIODE MODULE 1KV 300A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -
パッケージ: DO-200AA, A-PUK
在庫7,008
1000V
300A
1.7V @ 800A
Standard Recovery >500ns, > 200mA (Io)
6µs
50mA @ 1000V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, R62
-
1N3289A
Powerex Inc.

DIODE GEN PURP 200V 100A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 24mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
パッケージ: DO-205AA, DO-8, Stud
在庫5,872
200V
100A
1.5V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
24mA @ 200V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
SBR20M45D1Q-13
Diodes Incorporated

DIODE SBR 45V 20A TO252

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 610mV @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫5,792
45V
20A
610mV @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 45V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
-55°C ~ 175°C
UF4003-M3/73
Vishay Semiconductor Diodes Division

DIODE 1A 200V 50NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 125°C
パッケージ: DO-204AL, DO-41, Axial
在庫7,632
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SA2K-M3/5AT
Vishay Semiconductor Diodes Division

DIODE GPP 2A 800V DO-214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 3µA @ 1000V
  • Capacitance @ Vr, F: 11pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: DO-214AC, SMA
在庫6,352
800V
2A
1.1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
3µA @ 1000V
11pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS115L MTG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: DO-219AB
在庫4,768
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
hot CDBQR0230L-HF
Comchip Technology

DIODE SCHOTTKY 30V 200MA 0402

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30µA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1005 Metric)
  • Supplier Device Package: 0402/SOD-923F
  • Operating Temperature - Junction: 125°C (Max)
パッケージ: 0402 (1005 Metric)
在庫239,700
30V
200mA
500mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
30µA @ 10V
-
Surface Mount
0402 (1005 Metric)
0402/SOD-923F
125°C (Max)
BAS40-00-HE3-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 200MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100nA @ 30V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: 125°C (Max)
パッケージ: TO-236-3, SC-59, SOT-23-3
在庫93,120
40V
200mA
1V @ 40mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 30V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
125°C (Max)
PMEG2005ESFYL
Nexperia USA Inc.

DIODE SCHOTTKY 20V 0.5A SOD962

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.9ns
  • Current - Reverse Leakage @ Vr: 3.5µA @ 20V
  • Capacitance @ Vr, F: 25pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: DSN0603-2
  • Operating Temperature - Junction: 150°C (Max)
パッケージ: 0201 (0603 Metric)
在庫140,208
20V
500mA
620mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
1.9ns
3.5µA @ 20V
25pF @ 1V, 1MHz
Surface Mount
0201 (0603 Metric)
DSN0603-2
150°C (Max)
BAS86,115
Nexperia USA Inc.

DIODE SCHOTTKY 50V 200MA LLDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 5µA @ 40V
  • Capacitance @ Vr, F: 8pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80C
  • Operating Temperature - Junction: 125°C (Max)
パッケージ: DO-213AC, MINI-MELF, SOD-80
在庫48,696
50V
200mA (DC)
900mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 40V
8pF @ 1V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80C
125°C (Max)
1N1347RB
Solid State Inc.

DIODE GEN PURP REV 500V 16A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 200°C
パッケージ: -
Request a Quote
500 V
16A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 500 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
MURS140T3H
onsemi

DIODE GEN PURP 400V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
パッケージ: -
Request a Quote
400 V
2A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 400 V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
S1JLS
Taiwan Semiconductor Corporation

1.2A, 600V, STANDARD RECOVERY RE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
在庫60,000
600 V
1.2A
1.3 V @ 1.2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
SDM1100S1F-7-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
Request a Quote
100 V
1A
820 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 µA @ 100 V
28pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
W0642WC160
IXYS

DIODE GEN PURP 1.6KV 642A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 642A
  • Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 1900 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 µs
  • Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 180°C
パッケージ: -
Request a Quote
1600 V
642A
2.37 V @ 1900 A
Standard Recovery >500ns, > 200mA (Io)
15 µs
15 mA @ 1600 V
-
Clamp On
DO-200AB, A-PUK
W1
-40°C ~ 180°C
V2PM63LHM3-I
Vishay

2A, 60V SMP TRENCH SKY RECT.

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 60 V
  • Capacitance @ Vr, F: 320pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -40°C ~ 175°C
パッケージ: -
Request a Quote
60 V
2A
640 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 60 V
320pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-40°C ~ 175°C
SD103AW-HE3_A-08
Vishay

SCHOTTKY DIODE SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 350mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 30 V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 125°C
パッケージ: -
Request a Quote
40 V
350mA
600 mV @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
10 ns
5 µA @ 30 V
50pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
125°C
SVT12120UB_R2_00001
Panjit International Inc.

DIODE SCHOTTKY 120V 12A TO277B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 120 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
在庫29,868
120 V
12A
790 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
25 µA @ 120 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C
BAS40-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 40V 200MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 40 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
在庫24,840
40 V
200mA
1 V @ 40 mA
Small Signal =< 200mA (Io), Any Speed
-
1 µA @ 40 V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
MUR1560HS-BP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
パッケージ: -
Request a Quote
600 V
15A
1.5 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 600 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
B150BE-13
Diodes Incorporated

DIODE SCHOTTKY 50V 1A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 50 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
パッケージ: -
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50 V
1A
650 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 50 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
CFD4448-TR-PBFREE
Central Semiconductor Corp

DIDE GEN PURP 120V 250MA SOD882L

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
パッケージ: -
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MCL103C
Diotec Semiconductor

SCHOTTKY SOD106 20V 0.35A 125C

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 350mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 10 V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: MicroMelf
  • Operating Temperature - Junction: -55°C ~ 125°C
パッケージ: -
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20 V
350mA
600 mV @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
10 ns
5 µA @ 10 V
50pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
MicroMelf
-55°C ~ 125°C
SBS010M-TL-E
onsemi

SCHOTTKY BARRIER RECTIFIER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
パッケージ: -
Request a Quote
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