ページ 1726 - ダイオード - 整流器 - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-50WQ06FNTRLPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 570mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 60V Capacitance @ Vr, F: 360pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫2,032	60V	5.5A	570mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 60V	360pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
M1MA174T1	ON Semiconductor	DIODE GEN PURP 100V 200MA SC70-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -50°C ~ 150°C	パッケージ: SC-70, SOT-323	在庫791,280	100V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)	-50°C ~ 150°C
STTH1512D	STMicroelectronics	DIODE GEN PURP 1.2KV 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105ns Current - Reverse Leakage @ Vr: 15µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	パッケージ: TO-220-2	在庫6,240	1200V	15A	2.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	105ns	15µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
300HF40P	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 300A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	パッケージ: DO-205AB, DO-9, Stud	在庫4,816	400V	300A	-	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 400V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
1N4055	Powerex Inc.	DIODE GEN PURP 900V 275A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 900V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 190°C	パッケージ: DO-205AB, DO-9, Stud	在庫5,600	900V	275A	-	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 900V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 190°C
SR1504HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 15A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -50°C ~ 150°C	パッケージ: R6, Axial	在庫4,000	40V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SFF502G C0G	TSC America Inc.	DIODE, SUPER FAST, 5A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 980mV @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-220-3 Full Pack, Isolated Tab	在庫3,968	100V	5A	980mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SK52B R5G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AA, SMB	在庫2,144	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HER308G R0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 3A, 1000V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-201AD, Axial	在庫6,032	-	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
EGL34AHE3/98	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 500MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-213AA (Glass)	在庫5,968	50V	500mA	1.25V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
MUH1PC-M3/89A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A MICROSMP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: MicroSMP Supplier Device Package: MicroSMP Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: MicroSMP	在庫2,016	150V	1A	1.05V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	1µA @ 150V	-	Surface Mount	MicroSMP	MicroSMP	-55°C ~ 175°C
VS-ETH3007T-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 650V 30A TO-220 2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 37ns Current - Reverse Leakage @ Vr: 30µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫6,192	650V	30A	2.1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	37ns	30µA @ 650V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
DHG10I600PA	IXYS	DIODE GEN PURP 600V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.35V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-220-2	在庫6,552	600V	10A	2.35V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	15µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SBRT3M60P1-7	Diodes Incorporated	DIODE SBR 60V 3A POWERDI123 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 590mV @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: POWERDI?123	在庫2,896	60V	3A	590mV @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	POWERDI?123	PowerDI? 123	-65°C ~ 150°C
VS-70HF160	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 70A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AB, DO-5, Stud	在庫9,156	1600V	70A	1.46V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	4.5mA @ 1600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
STPS20SM60D	STMicroelectronics	DIODE SCHOTTKY 60V 20A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 630mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 85µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	パッケージ: TO-220-2	在庫15,276	60V	20A	630mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	85µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
BY203-20STR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 2KV 250MA SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 2.4V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 2µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: SOD-57, Axial	在庫231,486	2000V	250mA	2.4V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	2µA @ 1200V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 150°C
1N3913	Microchip Technology	FAST RECOVERY RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 15 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote	400 V	50A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	15 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
WNSC5D066506Q	WeEn Semiconductors	DIODE SIL CARB 650V 6A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 650 V Capacitance @ Vr, F: 201pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	Request a Quote	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	201pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
183NQ100R-1	SMC Diode Solutions	DIODE SCHOTTKY 100V 180A PRM1-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 180A Voltage - Forward (Vf) (Max) @ If: 910 mV @ 180 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V Capacitance @ Vr, F: 4150pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: PRM1-1 (Half Pak Module) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫81	100 V	180A	910 mV @ 180 A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5 mA @ 100 V	4150pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 175°C
GC9700-150A	Microchip Technology	DIODE SCHOTTKY 70V 15MA CHIP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 15mA Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Chip Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	70 V	15mA	430 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2.1pF @ 0V, 1MHz	Surface Mount	Die	Chip	-55°C ~ 150°C
HSM223CTR-E	Renesas Electronics Corporation	RECTIFIER DIODE, 0.1A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CDBMT2200-HF	Comchip Technology	DIODE SCHOTTKY 150V 2A SOD123H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 200 V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: SOD-123HT Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	200 V	2A	920 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 200 V	160pF @ 4V, 1MHz	Surface Mount	SOD-123T	SOD-123HT	-55°C ~ 150°C
IV1D12010T2	Inventchip	DIODE SIL CARB 1.2KV 30A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Capacitance @ Vr, F: 575pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫330	1200 V	30A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	575pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
SS16E-TPS03	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMAE Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	60 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	110pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMAE	-55°C ~ 150°C
ESH3B-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	Request a Quote	100 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	5 µA @ 100 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
UF808_T0_00001	Panjit International Inc.	DIODE GEN PURP 800V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫5,958	800 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 800 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
ESDLWHRVG	Taiwan Semiconductor Corporation	DIODE GP 200V 800MA SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 21pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫23,739	200 V	800mA	950 mV @ 800 mA	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	21pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C

VS-50WQ06FNTRLPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5.5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5.5A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 60V
Capacitance @ Vr, F: 360pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫2,032

60V

5.5A

570mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 60V

360pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

M1MA174T1

ON Semiconductor

DIODE GEN PURP 100V 200MA SC70-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: SC-70, SOT-323

在庫791,280

100V

200mA (DC)

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

-50°C ~ 150°C

STTH1512D

STMicroelectronics

DIODE GEN PURP 1.2KV 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105ns
Current - Reverse Leakage @ Vr: 15µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

パッケージ: TO-220-2

在庫6,240

1200V

15A

2.1V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

105ns

15µA @ 1200V

-

Through Hole

TO-220-2

TO-220AC

175°C (Max)

300HF40P

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 300A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

パッケージ: DO-205AB, DO-9, Stud

在庫4,816

400V

300A

-

Standard Recovery >500ns, > 200mA (Io)

-

20mA @ 400V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

1N4055

Powerex Inc.

DIODE GEN PURP 900V 275A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12mA @ 900V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 190°C

パッケージ: DO-205AB, DO-9, Stud

在庫5,600

900V

275A

-

Standard Recovery >500ns, > 200mA (Io)

-

12mA @ 900V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 190°C

SR1504HB0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 15A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: R6, Axial

在庫4,000

40V

15A

550mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

R6, Axial

R-6

-50°C ~ 150°C

SFF502G C0G

TSC America Inc.

DIODE, SUPER FAST, 5A, 100V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-220-3 Full Pack, Isolated Tab

在庫3,968

100V

5A

980mV @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 100V

70pF @ 4V, 1MHz

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

SK52B R5G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AA, SMB

在庫2,144

20V

5A

550mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

HER308G R0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 1000V

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-201AD, Axial

在庫6,032

-

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 1000V

35pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

EGL34AHE3/98

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 500MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AA (Glass)

在庫5,968

50V

500mA

1.25V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

7pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

MUH1PC-M3/89A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A MICROSMP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: MicroSMP
Supplier Device Package: MicroSMP
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: MicroSMP

在庫2,016

150V

1A

1.05V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

1µA @ 150V

-

Surface Mount

MicroSMP

-55°C ~ 175°C

VS-ETH3007T-N3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 650V 30A TO-220 2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37ns
Current - Reverse Leakage @ Vr: 30µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫6,192

650V

30A

2.1V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

37ns

30µA @ 650V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

DHG10I600PA

IXYS

DIODE GEN PURP 600V 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2.35V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-220-2

在庫6,552

600V

10A

2.35V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

15µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SBRT3M60P1-7

Diodes Incorporated

DIODE SBR 60V 3A POWERDI123

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: POWERDI?123

在庫2,896

60V

3A

590mV @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

POWERDI?123

PowerDI? 123

-65°C ~ 150°C

VS-70HF160

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 70A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AB, DO-5, Stud

在庫9,156

1600V

70A

1.46V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

4.5mA @ 1600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 150°C

STPS20SM60D

STMicroelectronics

DIODE SCHOTTKY 60V 20A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 85µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)

パッケージ: TO-220-2

在庫15,276

60V

20A

630mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

85µA @ 60V

-

Through Hole

TO-220-2

TO-220AC

150°C (Max)

BY203-20STR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 2KV 250MA SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 2µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: SOD-57, Axial

在庫231,486

2000V

250mA

2.4V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

300ns

2µA @ 1200V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 150°C

1N3913

Microchip Technology

FAST RECOVERY RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: -

Request a Quote

400 V

50A

1.4 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

15 µA @ 400 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 150°C

WNSC5D066506Q

WeEn Semiconductors

DIODE SIL CARB 650V 6A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Capacitance @ Vr, F: 201pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

Request a Quote

650 V

6A

1.7 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 650 V

201pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

183NQ100R-1

SMC Diode Solutions

DIODE SCHOTTKY 100V 180A PRM1-1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 180A
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 180 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V
Capacitance @ Vr, F: 4150pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: PRM1-1 (Half Pak Module)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

在庫81

100 V

180A

910 mV @ 180 A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5 mA @ 100 V

4150pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

PRM1-1 (Half Pak Module)

-55°C ~ 175°C

GC9700-150A

Microchip Technology

DIODE SCHOTTKY 70V 15MA CHIP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 15mA
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Chip
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

Request a Quote

70 V

15mA

430 mV @ 1 mA

Small Signal =< 200mA (Io), Any Speed

-

200 nA @ 50 V

2.1pF @ 0V, 1MHz

Surface Mount

Die

Chip

-55°C ~ 150°C

HSM223CTR-E

Renesas Electronics Corporation

RECTIFIER DIODE, 0.1A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

パッケージ: -

Request a Quote

-

CDBMT2200-HF

Comchip Technology

DIODE SCHOTTKY 150V 2A SOD123H

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: SOD-123HT
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

Request a Quote

200 V

2A

920 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 200 V

160pF @ 4V, 1MHz

Surface Mount

SOD-123T

SOD-123HT

-55°C ~ 150°C

IV1D12010T2

Inventchip

DIODE SIL CARB 1.2KV 30A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

在庫330

1200 V

30A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

50 µA @ 1200 V

575pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

SS16E-TPS03

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMAE
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

Request a Quote

60 V

1A

700 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

110pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMAE

-55°C ~ 150°C

ESH3B-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

Request a Quote

100 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

5 µA @ 100 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 175°C

UF808_T0_00001

Panjit International Inc.

DIODE GEN PURP 800V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫5,958

800 V

8A

1.7 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

1 µA @ 800 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

ESDLWHRVG

Taiwan Semiconductor Corporation

DIODE GP 200V 800MA SOD123W

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 800 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫23,739

200 V

800mA

950 mV @ 800 mA

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

21pF @ 4V, 1MHz

Surface Mount

SOD-123W

-55°C ~ 150°C