ページ 1763 - ダイオード - 整流器 - シングル | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTX1N6623US	Microsemi Corporation	DIODE GEN PURP 880V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 880V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 500nA @ 880V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: SQ-MELF, A	在庫7,888	880V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 880V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
LXA08FP600	Power Integrations	DIODE SCHOTTKY 600V 8A TO220FP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.94V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220 Full Pack Operating Temperature - Junction: 150°C (Max)	パッケージ: TO-220-2 Full Pack	在庫4,096	600V	8A	2.94V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	34ns	250µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220 Full Pack	150°C (Max)
SBYV26CHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AL, DO-41, Axial	在庫2,288	600V	1A	2.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
GPP15M-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1.5A DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-204AC, DO-15, Axial	在庫3,920	1000V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	8pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
6A10	Micro Commercial Co	DIODE GEN PURP 1KV 6A R6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 950mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: R6, Axial	在庫809,220	1000V	6A	950mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	-	Through Hole	R6, Axial	R-6	-55°C ~ 125°C
JANTX1N6078	Microsemi Corporation	DIODE GEN PURP 150V 1.3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1.3A Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 155°C	パッケージ: A, Axial	在庫2,224	150V	1.3A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 155°C
VS-40HFR160	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 160°C	パッケージ: DO-203AB, DO-5, Stud	在庫7,328	1600V	40A	1.5V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	4.5mA @ 1600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 160°C
VS-42HFR120	Vishay Semiconductor Diodes Division	DIODE 40A BRAZ SQR DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 190°C	パッケージ: DO-203AB, DO-5, Stud	在庫5,872	1200V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 190°C
C4D08120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 24.5A TO252 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 24.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: 560pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫6,096	1200V	24.5A	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	250µA @ 1200V	560pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
UHB10FT-E3/8W	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 10A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫2,112	300V	10A	1.2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
CURB206-G	Comchip Technology	DIODE GEN PURP 800V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: 150°C (Max)	パッケージ: DO-214AA, SMB	在庫4,688	800V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	150°C (Max)
B0530WS-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 500MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: SC-76, SOD-323	在庫4,128	30V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 30V	-	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
STPS1L40ZFY	STMicroelectronics	DIODE SCHOTTKY 40V 1A SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -40°C ~ 150°C	パッケージ: SOD-123F	在庫25,188	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	35µA @ 40V	-	Surface Mount	SOD-123F	SOD-123F	-40°C ~ 150°C
MBR3100G	ON Semiconductor	DIODE SCHOTTKY 100V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-201AA, DO-27, Axial	在庫120,000	100V	3A	790mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 100V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
1N5817	STMicroelectronics	DIODE SCHOTTKY 20V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: 150°C (Max)	パッケージ: DO-204AL, DO-41, Axial	在庫8,897,652	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	150°C (Max)
NSR0140P2T5G	ON Semiconductor	DIODE SCHOTTKY 30V 70MA SOD923 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 350mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 30V Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: SOD-923	在庫187,512	30V	70mA (DC)	350mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 30V	2.5pF @ 1V, 1MHz	Surface Mount	SOD-923	SOD-923	-55°C ~ 125°C
JANTX1N5196UR	Microchip Technology	DIODE GP 225V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: -	Request a Quote	225 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	-	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
MMBD1401ALT1G	onsemi	DIODE GEN PURP 200V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C	パッケージ: -	在庫15,744	200 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C
R4000-TP	Micro Commercial Co	DIODE GEN PURP 4KV 200MA DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 4000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote	4000 V	200mA	5 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 4000 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
S4PGHM3_B-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	400 V	4A	1.1 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	10 µA @ 400 V	30pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
S1KLS	Taiwan Semiconductor Corporation	1.2A, 800V, STANDARD RECOVERY RE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫60,000	800 V	1.2A	1.3 V @ 1.2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
FESB8HTHE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 500V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	500 V	8A	1.5 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 500 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
DSC10120	Diodes Incorporated	DIODE SIL CARB 1.2KV 10A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 640 µA @ 1200 V Capacitance @ Vr, F: 611pF @ 100mV, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO220AC (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫150	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	640 µA @ 1200 V	611pF @ 100mV, 1MHz	Through Hole	TO-220-2	TO220AC (Type WX)	-55°C ~ 175°C
DMA10P1600PZ-TRL	IXYS	DIODE GEN PURP 1.6KV 10A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1600 V Capacitance @ Vr, F: 4pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	Request a Quote	1600 V	10A	1.26 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	4pF @ 400V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263HV	-55°C ~ 175°C
SF64G-TP	Micro Commercial Co	DIODE GEN PURP 200V 6A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	200 V	6A	975 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	120pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER307G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫7,491	800 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 800 V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
TRS3E65H-S1Q	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 3A TO-220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 45 µA @ 650 V Capacitance @ Vr, F: 199pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C	パッケージ: -	在庫1,200	650 V	3A	1.35 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 650 V	199pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C
SRAF1660	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 16A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote	60 V	16A	700 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C

JANTX1N6623US

Microsemi Corporation

DIODE GEN PURP 880V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 880V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 880V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: SQ-MELF, A

在庫7,888

880V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

500nA @ 880V

10pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 150°C

LXA08FP600

Power Integrations

DIODE SCHOTTKY 600V 8A TO220FP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.94V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 150°C (Max)

パッケージ: TO-220-2 Full Pack

在庫4,096

600V

8A

2.94V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

34ns

250µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220 Full Pack

150°C (Max)

SBYV26CHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AL, DO-41, Axial

在庫2,288

600V

1A

2.5V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 600V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

GPP15M-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1.5A DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AC, DO-15, Axial

在庫3,920

1000V

1.5A

1.1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

8pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

6A10

Micro Commercial Co

DIODE GEN PURP 1KV 6A R6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: R6, Axial

在庫809,220

1000V

6A

950mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

-

Through Hole

R6, Axial

R-6

-55°C ~ 125°C

JANTX1N6078

Microsemi Corporation

DIODE GEN PURP 150V 1.3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1.3A
Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C

パッケージ: A, Axial

在庫2,224

150V

1.3A

1.76V @ 18.8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 150V

-

Through Hole

A, Axial

A-PAK

-65°C ~ 155°C

VS-40HFR160

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 40A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 160°C

パッケージ: DO-203AB, DO-5, Stud

在庫7,328

1600V

40A

1.5V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

4.5mA @ 1600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 160°C

VS-42HFR120

Vishay Semiconductor Diodes Division

DIODE 40A BRAZ SQR DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C

パッケージ: DO-203AB, DO-5, Stud

在庫5,872

1200V

40A

1.3V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 190°C

C4D08120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 24.5A TO252

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 24.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫6,096

1200V

24.5A

1.8V @ 8A

No Recovery Time > 500mA (Io)

0ns

250µA @ 1200V

560pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252-2

-55°C ~ 175°C

UHB10FT-E3/8W

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 10A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫2,112

300V

10A

1.2V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

CURB206-G

Comchip Technology

DIODE GEN PURP 800V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: 150°C (Max)

パッケージ: DO-214AA, SMB

在庫4,688

800V

2A

1.7V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

150°C (Max)

B0530WS-TP

Micro Commercial Co

DIODE SCHOTTKY 30V 500MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: SC-76, SOD-323

在庫4,128

30V

500mA

550mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 30V

-

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 125°C

STPS1L40ZFY

STMicroelectronics

DIODE SCHOTTKY 40V 1A SOD123F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: SOD-123F

在庫25,188

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

35µA @ 40V

-

Surface Mount

SOD-123F

-40°C ~ 150°C

MBR3100G

ON Semiconductor

DIODE SCHOTTKY 100V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AA, DO-27, Axial

在庫120,000

100V

3A

790mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 100V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 175°C

1N5817

STMicroelectronics

DIODE SCHOTTKY 20V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: 150°C (Max)

パッケージ: DO-204AL, DO-41, Axial

在庫8,897,652

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

150°C (Max)

NSR0140P2T5G

ON Semiconductor

DIODE SCHOTTKY 30V 70MA SOD923

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 350mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 30V
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: SOD-923

在庫187,512

30V

70mA (DC)

350mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

-

500nA @ 30V

2.5pF @ 1V, 1MHz

Surface Mount

SOD-923

-55°C ~ 125°C

JANTX1N5196UR

Microchip Technology

DIODE GP 225V 200MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: -

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225 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

Surface Mount

DO-213AA

-65°C ~ 175°C

MMBD1401ALT1G

onsemi

DIODE GEN PURP 200V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C

パッケージ: -

在庫15,744

200 V

200mA

1 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

150°C

R4000-TP

Micro Commercial Co

DIODE GEN PURP 4KV 200MA DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: -

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4000 V

200mA

5 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

5 µA @ 4000 V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

S4PGHM3_B-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 4A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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400 V

4A

1.1 V @ 4 A

Standard Recovery >500ns, > 200mA (Io)

2.5 µs

10 µA @ 400 V

30pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

S1KLS

Taiwan Semiconductor Corporation

1.2A, 800V, STANDARD RECOVERY RE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫60,000

800 V

1.2A

1.3 V @ 1.2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

-

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

FESB8HTHE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 500V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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500 V

8A

1.5 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 500 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

DSC10120

Diodes Incorporated

DIODE SIL CARB 1.2KV 10A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 640 µA @ 1200 V
Capacitance @ Vr, F: 611pF @ 100mV, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

在庫150

1200 V

10A

1.7 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

640 µA @ 1200 V

611pF @ 100mV, 1MHz

Through Hole

TO-220-2

TO220AC (Type WX)

-55°C ~ 175°C

DMA10P1600PZ-TRL

IXYS

DIODE GEN PURP 1.6KV 10A TO263HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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1600 V

10A

1.26 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1600 V

4pF @ 400V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263HV

-55°C ~ 175°C

SF64G-TP

Micro Commercial Co

DIODE GEN PURP 200V 6A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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200 V

6A

975 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

120pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

HER307G

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

在庫7,491

800 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 800 V

35pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

TRS3E65H-S1Q

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 3A TO-220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 45 µA @ 650 V
Capacitance @ Vr, F: 199pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C

パッケージ: -

在庫1,200

650 V

3A

1.35 V @ 3 A

No Recovery Time > 500mA (Io)

0 ns

45 µA @ 650 V

199pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220-2L

175°C

SRAF1660

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 16A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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60 V

16A

700 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C